WO2019082875A1 - 試料保持具 - Google Patents

試料保持具

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Publication number
WO2019082875A1
WO2019082875A1 PCT/JP2018/039298 JP2018039298W WO2019082875A1 WO 2019082875 A1 WO2019082875 A1 WO 2019082875A1 JP 2018039298 W JP2018039298 W JP 2018039298W WO 2019082875 A1 WO2019082875 A1 WO 2019082875A1
Authority
WO
WIPO (PCT)
Prior art keywords
base
porous member
sample holder
bonding layer
support
Prior art date
Application number
PCT/JP2018/039298
Other languages
English (en)
French (fr)
Inventor
古川　直樹
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to KR1020207009856A priority Critical patent/KR102394687B1/ko
Priority to JP2019538466A priority patent/JP6963016B2/ja
Priority to CN201880067290.8A priority patent/CN111213230B/zh
Priority to US16/754,234 priority patent/US11515192B2/en
Publication of WO2019082875A1 publication Critical patent/WO2019082875A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • the present disclosure relates to a sample holder.
  • Patent Document 1 As a sample holder used for a semiconductor manufacturing apparatus etc., for example, an electrostatic chuck described in JP-A-2015-517225 (hereinafter referred to as Patent Document 1) is known.
  • the electrostatic chuck described in Patent Document 1 includes a dielectric layer and a metal base provided below the dielectric layer.
  • the metal base portion is provided with a through hole for wafer cooling, and a porous member is provided inside the through hole.
  • the sample holder of the present disclosure joins a substrate having a ceramic and having a sample holding surface on the upper surface, a support having a metal and the upper surface covering the lower surface of the substrate, and the lower surface of the substrate and the upper surface of the support.
  • a first bonding layer penetrating from the lower surface of the support through the first bonding layer to the upper surface of the base, and in at least a part of the base, the inside of the support and the second
  • a porous member which has a first through hole which is thinner than that in the bonding layer, is located inside the first through hole, and is bonded to the lower surface of the base via the second bonding layer. Is equipped.
  • FIG. 2 is a cross-sectional view of the sample holder shown in FIG. 1 taken along line AA. It is the fragmentary sectional view which expanded field B among the sample holders shown in FIG. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder. It is a fragmentary sectional view which shows the other example of a sample holder.
  • the sample holder 100 includes a base 1, a support 2, a first bonding layer 3, a second bonding layer 4, and a porous member 5.
  • the sample holder 100 further includes a suction electrode 6.
  • the sample holder 100 is, for example, an electrostatic chuck.
  • the sample holder 100 is used, for example, by generating plasma above the sample holding surface 14.
  • the plasma can be generated, for example, by exciting a gas located between the electrodes by applying a high frequency between a plurality of external electrodes.
  • the base 1 is a disk-shaped member.
  • the base 1 is a sample holding surface 14 whose upper surface holds a sample.
  • the substrate 1 holds a sample such as a silicon wafer on the sample holding surface 14 on the upper surface.
  • the substrate 1 comprises, for example, a ceramic material.
  • the ceramic material includes, for example, a ceramic material such as alumina, aluminum nitride, silicon nitride or yttria.
  • the dimensions of the substrate 1 can be set, for example, to a diameter of 200 to 500 mm and a thickness of 2 to 15 mm.
  • the sample holder 100 of this example holds a sample by electrostatic force. Therefore, the sample holder 100 is provided with the adsorption electrode 6 inside the base 1.
  • the adsorption electrode 6 has two electrodes. One of the two electrodes is connected to the positive electrode of the power supply, and the other is connected to the negative electrode. Each of the two electrodes is substantially in the shape of a semicircle, and is positioned inside the ceramic body 1 so that the semicircular chords face each other. These two electrodes are combined, and the outer shape of the whole of the adsorption electrode 6 is circular.
  • the center of the circular outer shape of the whole of the adsorption electrode 6 can be set to be the same as the center of the outer shape of the circular ceramic body.
  • the adsorption electrode 6 has, for example, a metal material.
  • a metal material it has metal materials, such as platinum, tungsten, or molybdenum, for example.
  • the support 2 is a member for supporting the base 1.
  • the support 2 is, for example, a disk-shaped member.
  • the support 2 has, for example, a metal material.
  • a metal material aluminum can be used, for example.
  • the support 2 and the base 1 are bonded via the first bonding layer 3.
  • the upper surface of the support 2 and the lower surface of the base 1 are bonded by the first bonding layer 3.
  • a resin material can be used as the first bonding layer 3.
  • a silicone adhesive can be used as the resin material.
  • the base 1, the first bonding layer 3 and the support 2 have a first through hole 7.
  • the first through holes 7 are provided, for example, to allow a gas such as helium to flow into the sample holding surface 14 side.
  • the first through holes 7 penetrate from the lower surface of the support 2 through the first bonding layer 3 to the upper surface of the base 1.
  • the first through holes 7 are thinner in the support 2 and in the first bonding layer 3 in at least a part of the base 1.
  • the first through holes 7 have a cylindrical shape with a constant diameter from the lower surface to the upper surface of the support 2 and from the lower surface to the upper surface of the first bonding layer 3.
  • the first through holes 7 are cylindrical first recesses 8 located on the lower surface of the base 1 and a cylindrical second open in the bottom surface of the first recess 8 and the upper surface of the base 1. It has a through hole 9.
  • the porous member 5 is provided to prevent plasma from entering the support 2 through the first through holes 7 when plasma is generated above the sample holding surface 14.
  • a ceramic material such as alumina can be used as the porous member 5.
  • the porous member 5 is located inside the first through hole 7.
  • the porous member 5 is bonded to the lower surface of the base 1 via the second bonding layer 4.
  • the second bonding layer 4 bonds the lower surface of the base 1 to the porous member 5 so as not to block the second through holes 9 in the base 1.
  • the second bonding layer 4 has, for example, a hole that is continuous with the second through hole 9 and penetrates to the upper surface and the lower surface of the second bonding layer 4.
  • the porous member 5 has a porosity that allows gas to flow from the upper surface to the lower surface. Therefore, by positioning the porous member 5 inside the first through hole 7, the possibility of plasma reaching the support 2 side is reduced while flowing the gas through the first through hole 7.
  • the porosity of the porous member 5 can be set, for example, to 40 to 60%.
  • the second bonding layer 4 is a member for bonding the porous member 5 to the lower surface of the base 1.
  • a resin material or a glass material can be used as the second bonding layer 4.
  • a material having high plasma resistance may be used.
  • a glass material to which calcium oxide or yttria or the like is added can be used.
  • a fluorine resin can also be used.
  • the porous member 5 is bonded to the lower surface of the base 1 via the second bonding layer 4.
  • the gap between the porous member 5 and the base 1 can be filled, so that the possibility of arcing passing between the porous member 5 and the base 1 can be reduced.
  • the first through holes 7 in the base 1 are opened to the bottoms of the first recess 8 and the first recess 8 located on the lower surface of the base 1 and the upper surface of the base 1.
  • the porous member 5 may be joined to the bottom surface of the first recess 8 while having the holes 9.
  • the upper surface of the porous member 5 can be moved upward from the support 2.
  • the insulation distance between the upper surface of the porous member 5 and the support 2 can be increased.
  • the upper surface of the porous member 5 may be inside the first recess 8. In other words, the upper surface of the porous member 5 may be above the lower surface of the base 1. Thereby, the insulation distance between the upper surface of the porous member 5 and the support 2 can be further lengthened. As a result, the risk of arcing can be further reduced.
  • the sample holder 100 is located inside the first through hole 7, and covers a part of the lower surface of the porous member 5 and at least a part of the outer peripheral surface, and extends along the first through hole 7. You may further provide the cylindrical member 10 of the sex. As a result, the possibility of arcing between the region of the first through hole 7 located below the porous member 5 and the support 2 can be reduced.
  • the cylindrical member 10 for example, a ceramic material can be used.
  • a ceramic material alumina or aluminum nitride is mentioned, for example.
  • the cylindrical member 10 has a step on the inner circumferential surface. In other words, the cylindrical member 10 has a shape in which the inner diameter spreads at the upper end. Thereby, the cylindrical member 10 and the porous member 5 can be fitted.
  • the inner diameter of the surface of the cylindrical member 10 in contact with the lower surface of the porous member 5 may be larger than the inner diameter of the lower end.
  • the porous member 5 and the second bonding layer 4 have the second recess 11 in which the portion of the first through hole 7 located on the base 1 and the inner circumferential surface are continuous. It is also good.
  • the surface area of the porous member 5 connected to the portion of the first through hole 7 located on the base 1 can be increased. Therefore, the gas can be smoothly flowed from the porous member 5 to the portion of the first through hole 7 located on the base 1.
  • FIG. 6 it may further have a third recess 12 extending from the upper surface of the base 1 through the second bonding layer 4 to the porous member 5.
  • a third recess 12 extending from the upper surface of the base 1 through the second bonding layer 4 to the porous member 5.
  • the upper end of the cylindrical member 10 may be above the upper surface of the porous member 5.
  • the cylindrical member 10 is positioned between the upper end surface of the porous member 5 and the support 2, there is a possibility that the upper end surface of the porous member 5 may be transmitted to the support 2. It can be reduced.
  • a third bonding layer 13 may be further provided between the cylindrical member 10 and the support 2.
  • a resin material such as a silicone resin or an epoxy resin can be used.
  • the whole of the porous member 5 may be located inside the first recess 8.
  • the porous member 5 can be made less susceptible to the thermal expansion by the support 2.
  • the long-term reliability of the sample holder 100 can be improved.
  • the porous member 5 and the cylindrical member 10 may be located apart from each other. Thereby, the possibility that a thermal stress may occur between the cylindrical member 10 and the porous member 5 can be reduced. As a result, the long-term reliability of the sample holder 100 can be improved.
  • base 2 support 3: first bonding layer 4: second bonding layer 5: porous member 6: adsorption electrode 7: first through hole 8: first recess 9: second through hole 10: cylindrical member 11: second recess 12: third recess 13: third bonding layer 100: sample holder

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

試料保持具は、セラミックスを有し上面に試料保持面を有する基体と、金属を有し上面が前記基体の下面を覆う支持体と、前記基体の下面および前記支持体の上面を接合する第１接合層と、を備えており、前記支持体の下面から前記第１接合層を通って前記基体の上面まで貫通するとともに、前記基体中の少なくとも一部において前記支持体中および前記第１接合層中よりも細くなっている第１貫通孔を有しており、前記第１貫通孔の内部に位置しており前記基体の下面に第２接合層を介して接合された多孔質部材を備えている。

Description

試料保持具
　本開示は、試料保持具に関するものである。
　半導体製造装置等に用いられる試料保持具として、例えば、特表２０１５－５１７２２５号公報（以下、特許文献１とする）に記載の静電チャックが知られている。特許文献１に記載の静電チャックは、誘電体層と、誘電体層の下方に設けられた金属ベース部とを備えている。金属ベース部にはウエハ冷却用の貫通孔が設けられており、貫通孔の内部には多孔質部材が設けられている。
　本開示の試料保持具は、セラミックスを有し上面に試料保持面を有する基体と、金属を有し上面が前記基体の下面を覆う支持体と、前記基体の下面および前記支持体の上面を接合する第１接合層と、を備えており、前記支持体の下面から前記第１接合層を通って前記基体の上面まで貫通するとともに、前記基体中の少なくとも一部において前記支持体中および前記第１接合層中よりも細くなっている第１貫通孔を有しており、前記第１貫通孔の内部に位置しており前記基体の下面に第２接合層を介して接合された多孔質部材を備えている。
試料保持具の一例を示す上面図である。 図１に示す試料保持具をＡ－Ａ線で切った断面図である。 図２に示す試料保持具のうち領域Ｂを拡大した部分断面図である。 試料保持具の他の例を示す部分断面図である。 試料保持具の他の例を示す部分断面図である。 試料保持具の他の例を示す部分断面図である。 試料保持具の他の例を示す部分断面図である。 試料保持具の他の例を示す部分断面図である。 試料保持具の他の例を示す部分断面図である。
　以下、試料保持具１００について、図面を参照して説明する。
　図１、２に示すように、試料保持具１００は、基体１と支持体２と第１接合層３と第２接合層４と多孔質部材５とを備えている。本例においては、試料保持具１００は、さらに、吸着電極６を備えている。試料保持具１００は、例えば、静電チャックである。試料保持具１００は、例えば、試料保持面１４より上方においてプラズマを発生させて用いられる。プラズマは、例えば、外部の複数の電極の間に高周波を印加することによって、電極間に位置するガスを励起させることにより、発生させることができる。
　基体１は、円板状の部材である。基体１は、上面が試料を保持する試料保持面１４である。基体１は、上面の試料保持面１４において、例えば、シリコンウエハ等の試料を保持する。基体１は、例えば、セラミック材料を有する。セラミック材料としては、例えばアルミナ、窒化アルミニウム、窒化ケイ素またはイットリア等のセラミック材料を有する。基体１の寸法は、例えば、直径を２００～５００ｍｍ、厚みを２～１５ｍｍに設定できる。
　基体１を用いて試料を保持する方法としては様々な方法を用いることができる。本例の試料保持具１００は、静電気力によって試料を保持する。そのため、試料保持具１００は基体１の内部に吸着電極６を備えている。吸着電極６は、２つの電極を有している。２つの電極は、一方が電源の正極に接続され、他方が負極に接続される。２つの電極は、それぞれ略半円板状であって、半円の弦同士が対向するように、セラミック体１の内部に位置している。これら２つの電極が合わさって、吸着電極６全体の外形が円形状となっている。この吸着電極６の全体による円形状の外形の中心は、同じく円形状のセラミック体の外形の中心と同一に設定できる。吸着電極６は、例えば、金属材料を有する。金属材料としては、例えば、白金、タングステンまたはモリブデン等の金属材料を有する。
　支持体２は、基体１を支えるための部材である。支持体２は、例えば、円板状の部材である。支持体２は、例えば、金属材料を有する。金属材料としては、例えば、アルミニウムを用いることができる。支持体２と基体１とは、第１接合層３を介して接合されている。具体的には、支持体２の上面と基体１の下面とが、第１接合層３によって接合されている。第１接合層３としては、例えば、樹脂材料を用いることができる。樹脂材料としては、例えば、シリコーン接着剤を用いることができる。
　図２、３に示すように、基体１と第１接合層３と支持体２とは、第１貫通孔７を有している。第１貫通孔７は、例えば、ヘリウム等のガスを試料保持面１４側に流入させるために設けられている。第１貫通孔７は、支持体２の下面から第１接合層３を通って基体１の上面まで貫通している。第１貫通孔７は、基体１の少なくとも一部において支持体２中および第１接合層３中よりも細くなっている。本例の試料保持具１００においては、第１貫通孔７は、支持体２の下面から上面、第１接合層３の下面から上面にかけては径が一定の円柱状である。また、第１貫通孔７は、基体１中においては、基体１の下面に位置する円柱状の第１凹部８および第１凹部８の底面と基体１の上面とに開口する円柱状の第２貫通孔９を有している。
　多孔質部材５は、試料保持面１４より上方においてプラズマを発生させたときに、プラズマが第１貫通孔７を通って支持体２側にまで入り込まないようにするために設けられている。多孔質部材５としては、例えば、アルミナ等のセラミック材料を用いることができる。多孔質部材５は、第１貫通孔７の内部に位置している。多孔質部材５は、基体１の下面に第２接合層４を介して接合されている。具体的には、第２接合層４は、基体１における第２貫通孔９を塞ぐことが無いように基体１の下面と多孔質部材５とを接合している。言い換えると、第２接合層４は、例えば、第２貫通孔９に連続するとともに第２接合層４の上面と下面とに貫通する孔を有している。
　多孔質部材５は、上面から下面に気体を流すことが可能な程度の気孔率を有している。そのため、第１貫通孔７の内部に多孔質部材５を位置させることによって、第１貫通孔７に気体を流しつつも、プラズマが支持体２側に到達してしまうおそれを低減する。多孔質部材５の気孔率としては、例えば、４０～６０％に設定できる。
　第２接合層４は、基体１の下面に多孔質部材５を接合するための部材である。第２接合層４としては、例えば、樹脂材料またはガラス材料を用いることができる。特に、第２接合層４は、プラズマに接触するおそれがある領域に設けられることから、耐プラズマ性の高い材料を用いてもよい。具体的には、酸化カルシウムまたはイットリア等を添加したガラス材料を用いることができる。また、フッ素樹脂を用いることもできる。
　本例の試料保持具１００においては、多孔質部材５が基体１の下面に第２接合層４を介して接合されている。これにより、多孔質部材５と基体１との間の隙間を埋めることができるので、多孔質部材５と基体１との間を通ってアーキングが生じてしまうおそれを低減できる。
　また、図３に示すように、基体１中における第１貫通孔７が、基体１の下面に位置する第１凹部８および第１凹部８の底面と基体１の上面とに開口する第２貫通孔９を有しているとともに、第１凹部８の底面に多孔質部材５が接合されていてもよい。第１凹部８の底面に多孔質部材５を接合することによって、多孔質部材５の上面を支持体２から上方に遠ざけることができる。これにより、多孔質部材５の上面と支持体２との間の絶縁距離を長くすることができる。その結果、多孔質部材５の上面を通って支持体２と貫通孔との間にアーキングが生じるおそれを低減できる。
　多孔質部材５の上面が第１凹部８の内部にあってもよい。言い換えると、多孔質部材５の上面が基体１の下面よりも上方にあってもよい。これにより、多孔質部材５の上面と支持体２との間の絶縁距離をさらに長くすることができる。その結果、アーキングが生じるおそれをさらに低減できる。
　また、試料保持具１００は、第１貫通孔７の内部に位置しており、多孔質部材５の下面の一部および外周面の少なくとも一部を覆うとともに第１貫通孔７に沿って伸びる絶縁性の筒状部材１０をさらに備えていてもよい。これにより、第１貫通孔７のうち多孔質部材５の下方に位置する領域と支持体２との間でアーキングが生じるおそれを低減できる。
　筒状部材１０としては、例えば、セラミック材料を用いることができる。セラミック材料としては、例えば、アルミナまたは窒化アルミニウムが挙げられる。筒状部材１０は、内周面に段差を有している。言い換えると、筒状部材１０は、上端において内径が広がる形状を有している。これにより、筒状部材１０と多孔質部材５とを嵌め合わせることができる。
　また、図４に示すように、筒状部材１０は下端の内径よりも、多孔質部材５の下面に接する面の内径が大きくてもよい。これにより、筒状部材１０の内側から多孔質部材５を通って試料保持面１４側にガスが流れるときに、ガスの流れをスムーズにすることができる。その結果、多孔質部材５および筒状部材１０の長期信頼性を向上できる。
　また、図５に示すように、多孔質部材５および第２接合層４が、第１貫通孔７のうち基体１に位置する部分と内周面が連続する第２凹部１１を有していてもよい。多孔質部材５が第２凹部１１を有することによって、第１貫通孔７のうち基体１に位置する部分に繋がる多孔質部材５の表面積を大きくすることができる。そのため、多孔質部材５から第１貫通孔７のうち基体１に位置する部分に対してスムーズにガスを流すことができる。
　また、図６に示すように、基体１の上面から第２接合層４を通って多孔質部材５まで伸びる第３凹部１２をさらに有していてもよい。これにより、多孔質部材５から試料保持面１４側に対してガスを流すときに、圧力を分散できる。そのため、さらにスムーズにガスを流すことができる。第３凹部１２は１つのみ設けられていてもよいし、複数設けられていてもよい。
　また、図７に示すように、筒状部材１０の上端が多孔質部材５の上面よりも上方にあってもよい。これにより、多孔質部材５の上端面と支持体２との間に筒状部材１０が位置することになるので、多孔質部材５の上端面を伝わって支持体２にアーキングしてしまうおそれを低減できる。
　また、図８に示すように、筒状部材１０と支持体２との間に、さらに、第３接合層１３を有していてもよい。第３接合層１３としては、例えば、シリコーン樹脂またはエポキシ樹脂等の樹脂材料を用いることができる。第３接合層１３を有していることによって、ヒートサイクル下において、筒状部材１０と支持体２との間に熱応力が生じて筒状部材１０に位置ずれが生じるおそれを低減できる。
　また、図９に示すように、第１凹部８の内部に多孔質部材５の全体が位置していてもよい。言い換えると、多孔質部材５の下面が第１凹部８の開口面よりも上方に位置しているか、多孔質部材５の下面と第１凹部８の開口面が同一平面上に位置していてもよい。これにより、多孔質部材５が、支持体２による熱膨張の影響を受けにくくできる。その結果、試料保持具１００の長期信頼性を向上できる。
　さらに、このとき、多孔質部材５と筒状部材１０とが離れて位置していてもよい。これにより、筒状部材１０と多孔質部材５との間で熱応力が生じるおそれを低減できる。その結果、試料保持具１００の長期信頼性を向上できる。
１：基体
２：支持体
３：第１接合層
４：第２接合層
５：多孔質部材
６：吸着電極
７：第１貫通孔
８：第１凹部
９：第２貫通孔
１０：筒状部材
１１：第２凹部
１２：第３凹部
１３：第３接合層
１００：試料保持具

Claims (9)

  1. 　セラミックスを有し上面に試料保持面を有する基体と、
    金属を有し上面が前記基体の下面を覆う支持体と、
    前記基体の下面および前記支持体の上面を接合する第１接合層と、を備えており、
    　前記支持体の下面から前記第１接合層を通って前記基体の上面まで貫通するとともに、前記基体中の少なくとも一部において前記支持体中および前記第１接合層中よりも細くなっている第１貫通孔を有しており、
    　前記第１貫通孔の内部に位置しており前記基体の下面に第２接合層を介して接合された多孔質部材を備えている試料保持具。
  2. 　前記基体中における前記第１貫通孔が、前記基体の下面に位置する第１凹部および前記第１凹部の底面と前記基体の上面とに開口する第２貫通孔を有しているとともに、前記第１凹部の底面に前記多孔質部材が接合されている請求項１に記載の試料保持具。
  3. 　前記第１貫通孔の内部に位置しており、前記多孔質部材の下面の一部および外周面の少なくとも一部を覆うとともに前記第１貫通孔に沿って伸びる絶縁性の筒状部材をさらに備えた請求項１または請求項２に記載の試料保持具。
  4. 　前記筒状部材は下端の内径よりも、前記多孔質部材の下面に接する面の内径が大きい請求項３に記載の試料保持具。
  5. 　前記多孔質部材および前記第２接合層が、前記第１貫通孔のうち前記基体に位置する部分と内周面が連続する第２凹部を有する請求項１乃至請求項４のいずれかに記載の試料保持具。
  6. 　前記基体の前記上面から前記第２接合層を通って前記多孔質部材まで伸びる第３凹部をさらに有する請求項１乃至請求項５のいずれかに記載の試料保持具。
  7. 　前記筒状部材の上端が前記多孔質部材の上面よりも上方にある請求項３に記載の試料保持具。
  8. 　前記第１凹部の内部に前記多孔質部材の全体が位置している請求項２に記載の試料保持具。
  9. 　前記多孔質部材と前記筒状部材とが離れて位置している請求項３に記載の試料保持具。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212910A (ja) * 2018-06-04 2019-12-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持台座
KR20200133465A (ko) * 2019-05-20 2020-11-30 주식회사 케이에스티이 정전척 및 그 제조방법
JP2021044307A (ja) * 2019-09-09 2021-03-18 日本特殊陶業株式会社 保持装置
CN112687602A (zh) * 2019-10-18 2021-04-20 中微半导体设备(上海)股份有限公司 一种静电吸盘及其制造方法、等离子体处理装置
US20220028719A1 (en) * 2018-11-30 2022-01-27 Kyocera Corporation Sample holder
WO2022177653A1 (en) * 2021-02-17 2022-08-25 Applied Materials, Inc. Porous plug bonding

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200411355A1 (en) * 2019-06-28 2020-12-31 Applied Materials, Inc. Apparatus for reduction or prevention of arcing in a substrate support
JP7372271B2 (ja) * 2021-01-06 2023-10-31 日本碍子株式会社 半導体製造装置用部材及びその製法
JP7514817B2 (ja) * 2021-12-27 2024-07-11 日本碍子株式会社 半導体製造装置用部材
KR102592338B1 (ko) * 2022-10-25 2023-10-23 주식회사 동탄이엔지 일체형 다공성 필터를 포함하는 정전척 및 이의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123712A (ja) * 2008-11-19 2010-06-03 Nihon Ceratec Co Ltd 静電チャックおよびその製造方法
JP2013232641A (ja) * 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
JP2014209615A (ja) * 2013-03-29 2014-11-06 Toto株式会社 静電チャック
JP2015195346A (ja) * 2014-03-27 2015-11-05 Toto株式会社 静電チャック

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3154629B2 (ja) * 1994-11-24 2001-04-09 キヤノン株式会社 電子写真感光体およびこれを用いた電子写真装置、装置ユニット
KR100505035B1 (ko) * 2003-11-17 2005-07-29 삼성전자주식회사 기판을 지지하기 위한 정전척
US7646580B2 (en) * 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
KR101042782B1 (ko) * 2006-09-19 2011-06-20 가부시키가이샤 크리에이티브 테크놀러지 정전 척의 급전구조 및 그 제조방법 및 정전 척 급전구조의 재생방법
US20090086401A1 (en) * 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
US20090086400A1 (en) * 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
JP5250408B2 (ja) * 2008-12-24 2013-07-31 新光電気工業株式会社 基板温調固定装置
JP2010182763A (ja) * 2009-02-04 2010-08-19 Hitachi High-Technologies Corp プラズマ処理装置
JP3154629U (ja) * 2009-08-04 2009-10-22 日本碍子株式会社 静電チャック
KR20110056712A (ko) * 2009-11-23 2011-05-31 삼성전자주식회사 정전 척
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
JP5984504B2 (ja) 2012-05-21 2016-09-06 新光電気工業株式会社 静電チャック、静電チャックの製造方法
US9589826B2 (en) * 2013-02-25 2017-03-07 Kyocera Corporation Sample holder
JP6228031B2 (ja) * 2014-02-25 2017-11-08 京セラ株式会社 試料保持具およびこれを用いたプラズマエッチング装置
US9608550B2 (en) * 2015-05-29 2017-03-28 Lam Research Corporation Lightup prevention using multi-layer ceramic fabrication techniques
JP6525793B2 (ja) * 2015-07-29 2019-06-05 京セラ株式会社 試料保持具
WO2017056835A1 (ja) * 2015-09-29 2017-04-06 京セラ株式会社 試料保持具
JP6634315B2 (ja) 2016-03-03 2020-01-22 日本特殊陶業株式会社 保持装置および保持装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123712A (ja) * 2008-11-19 2010-06-03 Nihon Ceratec Co Ltd 静電チャックおよびその製造方法
JP2013232641A (ja) * 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
JP2014209615A (ja) * 2013-03-29 2014-11-06 Toto株式会社 静電チャック
JP2015195346A (ja) * 2014-03-27 2015-11-05 Toto株式会社 静電チャック

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212910A (ja) * 2018-06-04 2019-12-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持台座
JP7549446B2 (ja) 2018-06-04 2024-09-11 アプライド マテリアルズ インコーポレイテッド 基板支持台座
US20220028719A1 (en) * 2018-11-30 2022-01-27 Kyocera Corporation Sample holder
KR20200133465A (ko) * 2019-05-20 2020-11-30 주식회사 케이에스티이 정전척 및 그 제조방법
KR102255246B1 (ko) 2019-05-20 2021-05-25 (주)케이에스티이 정전척 및 그 제조방법
JP2021044307A (ja) * 2019-09-09 2021-03-18 日本特殊陶業株式会社 保持装置
JP7299805B2 (ja) 2019-09-09 2023-06-28 日本特殊陶業株式会社 保持装置
CN112687602A (zh) * 2019-10-18 2021-04-20 中微半导体设备(上海)股份有限公司 一种静电吸盘及其制造方法、等离子体处理装置
KR20210047257A (ko) * 2019-10-18 2021-04-29 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 정전 척 및 그 제조 방법, 플라즈마 처리 장치
KR102523739B1 (ko) * 2019-10-18 2023-04-20 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 정전 척 및 그 제조 방법, 플라즈마 처리 장치
WO2022177653A1 (en) * 2021-02-17 2022-08-25 Applied Materials, Inc. Porous plug bonding
US12097665B2 (en) 2021-02-17 2024-09-24 Applied Materials, Inc. Porous plug bonding

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