JP6963016B2 - 試料保持具 - Google Patents
試料保持具 Download PDFInfo
- Publication number
- JP6963016B2 JP6963016B2 JP2019538466A JP2019538466A JP6963016B2 JP 6963016 B2 JP6963016 B2 JP 6963016B2 JP 2019538466 A JP2019538466 A JP 2019538466A JP 2019538466 A JP2019538466 A JP 2019538466A JP 6963016 B2 JP6963016 B2 JP 6963016B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- porous member
- hole
- sample holder
- bonding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 49
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2:支持体
3:第1接合層
4:第2接合層
5:多孔質部材
6:吸着電極
7:第1貫通孔
8:第1凹部
9:第2貫通孔
10:筒状部材
11:第2凹部
12:第3凹部
13:第3接合層
100:試料保持具
Claims (8)
- セラミックスを有し上面に試料保持面を有する基体と、
金属を有し上面が前記基体の下面を覆う支持体と、
前記基体の下面および前記支持体の上面を接合する第1接合層と、を備えており、
前記支持体の下面から前記第1接合層を通って前記基体の上面まで貫通するとともに、前記基体中の少なくとも一部において前記支持体中および前記第1接合層中よりも細くなっている第1貫通孔を有しており、
前記第1貫通孔の内部に位置しており前記基体の下面に第2接合層を介して接合された多孔質部材を備えており、
前記第1貫通孔の内部に位置しており、前記多孔質部材の下面の一部および外周面の少なくとも一部を覆うとともに前記第1貫通孔に沿って伸びる絶縁性の筒状部材を備えた試料保持具。 - 前記基体中における前記第1貫通孔が、前記基体の下面に位置する第1凹部および前記第1凹部の底面と前記基体の上面とに開口する第2貫通孔を有しているとともに、前記第1凹部の底面に前記多孔質部材が接合されている請求項1に記載の試料保持具。
- 前記筒状部材は下端の内径よりも、前記多孔質部材の下面に接する面の内径が大きい請求項1または請求項2に記載の試料保持具。
- 前記多孔質部材および前記第2接合層が、前記第1貫通孔のうち前記基体に位置する部分と内周面が連続する第2凹部を有する請求項1乃至請求項3のいずれかに記載の試料保持具。
- 前記基体の前記上面から前記第2接合層を通って前記多孔質部材まで伸びる第3凹部をさらに有する請求項1乃至請求項4のいずれかに記載の試料保持具。
- 前記筒状部材の上端が前記多孔質部材の上面よりも上方にある請求項1乃至請求項5のいずれかに記載の試料保持具。
- 前記第1凹部の内部に前記多孔質部材の全体が位置している請求項2に記載の試料保持具。
- 前記多孔質部材と前記筒状部材とが離れて位置している請求項1乃至請求項7のいずれかに記載の試料保持具。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017206974 | 2017-10-26 | ||
JP2017206974 | 2017-10-26 | ||
PCT/JP2018/039298 WO2019082875A1 (ja) | 2017-10-26 | 2018-10-23 | 試料保持具 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019082875A1 JPWO2019082875A1 (ja) | 2021-08-19 |
JP6963016B2 true JP6963016B2 (ja) | 2021-11-05 |
Family
ID=66247471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019538466A Active JP6963016B2 (ja) | 2017-10-26 | 2018-10-23 | 試料保持具 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11515192B2 (ja) |
JP (1) | JP6963016B2 (ja) |
KR (1) | KR102394687B1 (ja) |
CN (1) | CN111213230B (ja) |
WO (1) | WO2019082875A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7157822B2 (ja) * | 2018-11-30 | 2022-10-20 | 京セラ株式会社 | 試料保持具 |
KR102255246B1 (ko) * | 2019-05-20 | 2021-05-25 | (주)케이에스티이 | 정전척 및 그 제조방법 |
US20200411355A1 (en) * | 2019-06-28 | 2020-12-31 | Applied Materials, Inc. | Apparatus for reduction or prevention of arcing in a substrate support |
JP7299805B2 (ja) * | 2019-09-09 | 2023-06-28 | 日本特殊陶業株式会社 | 保持装置 |
CN112687602A (zh) * | 2019-10-18 | 2021-04-20 | 中微半导体设备(上海)股份有限公司 | 一种静电吸盘及其制造方法、等离子体处理装置 |
JP7372271B2 (ja) * | 2021-01-06 | 2023-10-31 | 日本碍子株式会社 | 半導体製造装置用部材及びその製法 |
CN116261781A (zh) * | 2021-02-17 | 2023-06-13 | 应用材料公司 | 多孔塞接合 |
KR102592338B1 (ko) * | 2022-10-25 | 2023-10-23 | 주식회사 동탄이엔지 | 일체형 다공성 필터를 포함하는 정전척 및 이의 제조 방법 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3154629B2 (ja) * | 1994-11-24 | 2001-04-09 | キヤノン株式会社 | 電子写真感光体およびこれを用いた電子写真装置、装置ユニット |
KR100505035B1 (ko) * | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | 기판을 지지하기 위한 정전척 |
US7646580B2 (en) * | 2005-02-24 | 2010-01-12 | Kyocera Corporation | Electrostatic chuck and wafer holding member and wafer treatment method |
JP4808258B2 (ja) * | 2006-09-19 | 2011-11-02 | 株式会社クリエイティブ テクノロジー | 静電チャックの給電構造及びその製造方法並びに静電チャック給電構造の再生方法 |
US20090086400A1 (en) * | 2007-09-28 | 2009-04-02 | Intevac, Inc. | Electrostatic chuck apparatus |
US20090086401A1 (en) * | 2007-09-28 | 2009-04-02 | Intevac, Inc. | Electrostatic chuck apparatus |
JP5449750B2 (ja) | 2008-11-19 | 2014-03-19 | 株式会社日本セラテック | 静電チャックおよびその製造方法 |
JP5250408B2 (ja) * | 2008-12-24 | 2013-07-31 | 新光電気工業株式会社 | 基板温調固定装置 |
JP2010182763A (ja) * | 2009-02-04 | 2010-08-19 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP3154629U (ja) | 2009-08-04 | 2009-10-22 | 日本碍子株式会社 | 静電チャック |
KR20110056712A (ko) * | 2009-11-23 | 2011-05-31 | 삼성전자주식회사 | 정전 척 |
US8937800B2 (en) | 2012-04-24 | 2015-01-20 | Applied Materials, Inc. | Electrostatic chuck with advanced RF and temperature uniformity |
JP5956379B2 (ja) * | 2012-04-27 | 2016-07-27 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP5984504B2 (ja) | 2012-05-21 | 2016-09-06 | 新光電気工業株式会社 | 静電チャック、静電チャックの製造方法 |
US9589826B2 (en) * | 2013-02-25 | 2017-03-07 | Kyocera Corporation | Sample holder |
JP5633766B2 (ja) | 2013-03-29 | 2014-12-03 | Toto株式会社 | 静電チャック |
JP6228031B2 (ja) * | 2014-02-25 | 2017-11-08 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置 |
JP5811513B2 (ja) | 2014-03-27 | 2015-11-11 | Toto株式会社 | 静電チャック |
US9608550B2 (en) * | 2015-05-29 | 2017-03-28 | Lam Research Corporation | Lightup prevention using multi-layer ceramic fabrication techniques |
JP6525793B2 (ja) * | 2015-07-29 | 2019-06-05 | 京セラ株式会社 | 試料保持具 |
JP6526219B2 (ja) * | 2015-09-29 | 2019-06-05 | 京セラ株式会社 | 試料保持具 |
JP6634315B2 (ja) * | 2016-03-03 | 2020-01-22 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
-
2018
- 2018-10-23 WO PCT/JP2018/039298 patent/WO2019082875A1/ja active Application Filing
- 2018-10-23 JP JP2019538466A patent/JP6963016B2/ja active Active
- 2018-10-23 KR KR1020207009856A patent/KR102394687B1/ko active IP Right Grant
- 2018-10-23 US US16/754,234 patent/US11515192B2/en active Active
- 2018-10-23 CN CN201880067290.8A patent/CN111213230B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20200279765A1 (en) | 2020-09-03 |
US11515192B2 (en) | 2022-11-29 |
WO2019082875A1 (ja) | 2019-05-02 |
CN111213230B (zh) | 2023-10-10 |
KR20200047675A (ko) | 2020-05-07 |
KR102394687B1 (ko) | 2022-05-06 |
JPWO2019082875A1 (ja) | 2021-08-19 |
CN111213230A (zh) | 2020-05-29 |
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