WO2020171179A1 - 試料保持具 - Google Patents
試料保持具 Download PDFInfo
- Publication number
- WO2020171179A1 WO2020171179A1 PCT/JP2020/006876 JP2020006876W WO2020171179A1 WO 2020171179 A1 WO2020171179 A1 WO 2020171179A1 JP 2020006876 W JP2020006876 W JP 2020006876W WO 2020171179 A1 WO2020171179 A1 WO 2020171179A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sample holder
- surface roughness
- groove
- insulating base
- distance
- Prior art date
Links
- 230000003746 surface roughness Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims description 25
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 20
- 239000000919 ceramic Substances 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Definitions
- the present disclosure relates to a sample holder that holds a sample such as a semiconductor wafer used in a manufacturing process of a semiconductor integrated circuit or a manufacturing process of a liquid crystal display device.
- Patent Document 1 An example of the conventional technique is described in Patent Document 1.
- a sample holder of the present disclosure includes a plate-shaped insulating substrate having a first surface which is a sample holding surface and a second surface opposite to the first surface, A heating resistor provided on the second surface of the insulating base;
- the second surface has a first portion in which the heating resistor is located, a second portion surrounding the periphery of the first portion, and a groove portion provided between the first portion and the second portion, Have The surface roughness of the first portion is larger than the surface roughness of the second portion.
- FIG. 2 is a partially enlarged cross-sectional view in which the periphery of the outer peripheral portion shown in region A of FIG. 1 is enlarged. It is a partial expanded sectional view which expanded the peripheral part circumference of a 2nd embodiment. It is a partial expanded sectional view which expanded the peripheral part circumference of a 3rd embodiment. It is a partial expanded sectional view which expanded the peripheral part circumference of a 4th embodiment. It is a partial expanded sectional view which expanded the peripheral part circumference of a 5th embodiment. It is a partial expanded sectional view which expanded the 1st penetration hole circumference of a 6th embodiment.
- An electrostatic chuck is known as a sample holder used in a semiconductor manufacturing apparatus or the like, which is based on the sample holder of the present disclosure.
- a concave portion is provided on the main surface of the ceramic plate, and an electrode is provided in the concave portion.
- the plasma generated between the electrodes (heating resistor) and the outer periphery of the ceramic plate (insulating substrate) may cause dielectric breakdown.
- FIG. 1 is a sectional view showing the sample holder of the first embodiment.
- FIG. 2 is a partially enlarged cross-sectional view in which the periphery of the outer peripheral portion shown by the area A in FIG. 1 is enlarged.
- the sample holder 100 includes an insulating substrate 1 and a heating resistor 4, and further includes a support 2 and a bonding material 3.
- the insulating substrate 1 is a ceramic body having a first surface 1a and a second surface 1b opposite to the first surface 1a, and the first surface 1a is a uniformly flat sample holding surface for holding a sample.
- the insulating base 1 is a plate-shaped member, and the outer shape thereof is not limited, and may be, for example, a disk-shaped or a rectangular plate-shaped.
- the insulating base 1 is made of, for example, a ceramic material.
- a ceramic material for example, alumina, aluminum nitride, silicon nitride, yttria, or the like can be used.
- the outer dimensions of the insulating substrate 1 can be, for example, 200 to 500 mm in diameter (or side length) and 2 to 15 mm in thickness.
- the heating resistor 4 is provided on the second surface 1b of the insulating base 1.
- the heating resistor 4 is made of, for example, a metal material such as platinum, AgPb, tungsten, or molybdenum, and its electric resistance value is adjusted so as to generate heat when energized.
- the electric resistance value can be adjusted by, for example, mixing a metal material with a non-conductive material such as a ceramic material and mixing the mixture.
- the shape of the heating resistor 4 may be, for example, a strip shape, a meander shape, a grid shape (grid shape), or the like.
- the sample holder 100 is used, for example, by generating plasma above the first surface 1a of the insulating substrate 1 which is the sample holding surface.
- Plasma can be generated by exciting a gas located between electrodes by applying a high frequency between a plurality of electrodes provided outside, for example.
- the support 2 is made of metal and is a member for supporting the insulating base 1.
- the metallic material for example, aluminum can be used.
- the outer shape of the support 2 is not particularly limited, and may be circular or square.
- the outer dimensions of the support 2 can be, for example, 200 to 500 mm in diameter (or side length) and 10 to 100 mm in thickness.
- the support 2 may have the same outer shape as the insulating base 1, may have a different outer shape, may have the same outer dimensions, or may have different outer dimensions.
- the support body 2 and the insulating base body 1 are joined via the joining material 3. Specifically, the uniformly flat first surface 2 a of the support 2 and the second surface 1 b of the insulating base 1 are joined by the joining material 3.
- the outer shape of the first surface 2a of the support 2 and the outer shape of the second surface 1b of the insulating base 1 are, for example, the same, and the bonding material 3 is the first surface 2a of the support 2 and the second outer surface of the insulating base 1.
- the entire surface 1b is joined.
- the bonding material 3 for example, an adhesive made of a resin material can be used.
- the resin material for example, silicone resin can be used.
- the bonding material 3 is interposed between the heating resistor 4 provided on the second surface 1b of the insulating base 1 and the first surface 2a of the supporting body 2, the heating resistor 4 and the supporting body 2 are connected to each other. It is possible to ensure the electrical insulation of the.
- the insulating substrate 1 is provided with a through hole 9 (hereinafter, referred to as “first through hole”) 9 penetrating from the first surface 1a to the second surface 1b.
- the support body 2 is provided with a second through hole 7 penetrating from the first surface (one main surface) 2a to the second surface (the other main surface) 2b opposite to the first surface 2a.
- the second through hole 7 and the first through hole 9 communicate with each other and form a continuous hole from the first surface 1a of the insulating base 1 through the bonding material 3 to the second surface 2b of the support 2. There is.
- the second through hole 7 and the first through hole 9 are for allowing a gas such as helium to flow from the second surface 2b side of the support body 2 to the first surface 1a side of the insulating substrate 1 which is the sample holding surface. It is provided as a gas inflow hole.
- the porous member 5 may be provided inside the through hole 7.
- a ceramic porous material such as alumina can be used.
- the porous member 5 has a porosity that allows gas to flow from the upper surface to the lower surface. Therefore, by locating the porous member 5 inside the second through hole 7, it is possible to reduce the risk that the plasma may reach the support body 2 side while flowing the gas through the first through hole 9.
- the porosity of the porous member 5 can be set to 40 to 60%, for example.
- the second surface 1b of the insulating substrate 1 of the present embodiment has a first portion 21 on which the heating resistor 4 is located, a second portion 22 surrounding the periphery of the first portion 21, a first portion 21 and a second portion 22. And a groove portion (hereinafter, referred to as “first groove portion”) 23 provided between and.
- first groove portion a groove portion (hereinafter, referred to as “first groove portion”) 23 provided between and.
- the bonding material 3 joins the first portion 21 and the first surface 2 a of the support body 2, joins the second portion 22 and the first surface 2 a of the support body 2, and is placed inside the first groove portion 23. It has gone in.
- the first through hole 9 opens in the first portion 21.
- the second surface 1b is circular
- the second portion 22 is an annular portion on the outer periphery of the second surface 1b
- the first portion 21 is surrounded by the second portion 22.
- the first groove portion 23 is a circular portion that is concentric with the second surface 1b and has a small diameter, and is circumferentially provided between the first portion 21 and the second portion 22.
- the surface roughness of the first portion 21 is larger than the surface roughness of the second portion 22.
- the surface roughness of the first portion 21 is the surface roughness of the exposed portion of the surface of the insulating substrate 1 in the first portion 21 except for the portion where the heating resistor 4 is provided.
- the surface roughness of the surface of the heating resistor 4 is not included.
- the plasma generated above the first surface 1a leaks through the first through hole 9 in the vicinity of the second surface 1b of the insulating base 1 or flows from the outer periphery of the insulating base 1 to the second surface 1b.
- the plasma may cause dielectric breakdown between the heating resistor 4 and the second portion 22 of the insulating substrate 1.
- the creeping distance between the heating resistor 4 and the second portion 22 of the second surface 1b is increased, and By making the surface roughness of the first portion 21 larger than the surface roughness of the second portion 22, the creeping distance between the heating resistor 4 and the second portion 22 of the second surface 1b can be further increased, and the insulation The occurrence of breakage can be suppressed.
- the surface roughness of the first portion 21 and the second portion 22 is represented by Ra (arithmetic mean roughness) according to JIS B0601, for example, and the surface roughness Ra of the first portion 21 is, for example, 1.0 to 2.
- the surface roughness Ra of the second portion 22 is, for example, 0.1 to 0.5 ⁇ m.
- the surface roughness of the first groove portion 23 is not particularly limited, but may be larger than the surface roughness of the second portion 22.
- the surface roughness Ra of the first groove portion 23 is the surface roughness Ra of the bottom surface portion and is, for example, 1.0 to 2.0 ⁇ m.
- FIG. 3 is a partially enlarged sectional view in which the periphery of the outer peripheral portion of the second embodiment is enlarged.
- the sample holder 100 of the present embodiment is different from the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as the first embodiment is omitted.
- the distance from the first surface 1a of the first portion 21 and the distance from the first surface 1a of the second portion 22 are the same.
- the distance from the first surface 1a of the first portion 21 is made larger than the distance from the first surface 1a of the second portion 22A.
- the first surface 1a of the insulating base 1 is a uniformly flat surface, and the distance from the first surface 1a to the first portion 21 and the second portion 22A is the thickness of the insulating base 1 in the first portion 21. And the thickness of the insulating base 1 in the second portion 22A.
- the thickness of the insulating base 1 in the first portion 21 is made larger than the thickness of the insulating base 1 in the second portion 22A.
- the thickness of the outer peripheral second portion 22A is smaller than the thickness of the first portion 21.
- the distance from the first surface 2a of the support body 2 to the second portion 22A is larger than the distance to the first portion 21.
- the thickness of the bonding material 3 becomes larger on the outer peripheral side of the second portion 22A than on the inner side of the first portion 21. Since the heat transfer resistance increases as the thickness of the bonding material 3 increases, the thickness of the bonding material 3 is increased on the outer peripheral side where heat is easily transferred to the support body 2 from the second portion 22A to the support body 2. Suppress movement. As a result, it is possible to reduce the temperature difference between the outer peripheral side and the inner side of the sample holding surface and improve the heat uniformity.
- FIG. 4 is a partially enlarged sectional view in which the periphery of the outer peripheral portion of the third embodiment is enlarged.
- the sample holder 100 of the present embodiment is different from the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as the first embodiment is omitted.
- the distance from the first surface 1a of the first portion 21 and the distance from the first surface 1a of the second portion 22 are the same.
- the distance from the first surface 1a of the first portion 21 is made smaller than the distance from the first surface 1a of the second portion 22B. That is, in this embodiment, the thickness of the insulating base 1 in the first portion 21 is smaller than the thickness of the insulating base 1 in the second portion 22B. In other words, the thickness of the outer peripheral second portion 22B is made larger than the thickness of the first portion 21.
- An arc discharge may occur from the heating resistor 4 provided in the first portion 21 toward the second portion 22 on the outer circumference, but since the thickness of the second portion 22B is large, the discharge path becomes non-linear. The occurrence of arc discharge can be suppressed.
- FIG. 5 is a partially enlarged sectional view in which the periphery of the outer peripheral portion of the fourth embodiment is enlarged.
- the sample holder 100 of the present embodiment is different from the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as the first embodiment is omitted.
- both the edge portion of the first groove portion 23 and the intersecting portion where the inner wall surface and the bottom surface of the first groove portion 23 intersect are corner portions, and, for example, mechanical impact from the outside or The stress generated by the impact due to heat or the like concentrates on this corner portion, and cracks or chips may occur.
- the edge portion of the first groove portion 23A and the intersecting portion where the inner wall surface and the bottom surface of the first groove portion 23A intersect each other have an R shape, and the generated stress is dispersed to prevent cracks or chips. Occurrence can be suppressed.
- FIG. 6 is a partially enlarged sectional view in which the periphery of the outer peripheral portion of the fifth embodiment is enlarged.
- the sample holder 100 of the present embodiment is different from the first embodiment only in the configuration of the outer peripheral portion, and detailed description of the same configuration as the first embodiment is omitted.
- the width of the first groove portion 23 is constant from the opening to the bottom surface.
- the width of the first groove portion 23A is made smaller as it goes from the opening to the bottom surface.
- the size of the internal space of the first groove 23A is relatively small, and the amount of the bonding material 3 to be filled is also small.
- the bonding material 3 is a material that increases the thermal resistance, the thermal resistance decreases as the amount of the bonding material 3 filled decreases.
- the portion of the first surface 1a facing the first groove portion 23A is easily overheated by the heat generated in the heating resistor 4, but since the thermal resistance in the first groove portion 23A is small, the heat moves to the support body 2. , Overheating is suppressed.
- FIG. 7 is a partially enlarged sectional view in which the periphery of the first through hole of the sixth embodiment is enlarged.
- the sample holder 100 of the present embodiment is different from the first embodiment only in the configuration around the first through hole, and detailed description of the configuration similar to that of the first embodiment is omitted.
- the second surface 1b of the insulating base 1 of the present embodiment has the third portion 24 located around the opening of the first through hole 9 and the second groove portion provided between the first portion 21 and the third portion 24. 25 is further included.
- the third portion 24 is a portion that corresponds to a part of the first portion 21 in the above-described embodiment, and is an annular portion that corresponds to the opening periphery of the first through hole 9.
- the annular third portion 24 is surrounded by the first portion 21, and the second groove portion 25 is located between the first portion 21 and the third portion 24.
- the surface roughness of the first portion 21 is larger than the surface roughness of the third portion 24.
- the plasma leaks near the second surface 1b of the insulating base 1 through the first through hole 9, so that the plasma is generated between the heating resistor 4 and the third portion 24 of the insulating base 1. Dielectric breakdown may occur.
- the creeping distance between the heating resistor 4 and the third portion 24 of the second surface 1b is increased, and
- the creepage distance between the heating resistor 4 and the third portion 24 of the second surface 1b can be further increased, and the insulation The occurrence of breakage can be suppressed.
- the surface roughness Ra of the third portion 24 is, for example, 0.1 to 0.5 ⁇ m.
- the surface roughness of the second groove portion 25 is not particularly limited, but may be larger than the surface roughness of the third portion 24.
- the surface roughness Ra of the second groove portion 25 is the surface roughness Ra of the bottom surface portion like the first groove portion 23, and is, for example, 1.0 to 2.0 ⁇ m.
- the present disclosure can have the following embodiments.
- a sample holder of the present disclosure includes a plate-shaped insulating substrate having a first surface which is a sample holding surface and a second surface opposite to the first surface, A heating resistor provided on the second surface of the insulating base;
- the second surface has a first portion in which the heating resistor is located, a second portion surrounding the periphery of the first portion, and a groove portion provided between the first portion and the second portion, Have The surface roughness of the first portion is larger than the surface roughness of the second portion.
- the creepage distance between the heating resistor and the second portion of the second surface can be increased, and the occurrence of dielectric breakdown can be suppressed.
- the bonding material 3 does not have to be located entirely between the second surface 1b of the insulating base 1 and the first surface 2a of the support body 2, and may be provided in part.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Abstract
Description
前記絶縁基体の前記第2面に設けられた発熱抵抗体と、を備え、
前記第2面は、前記発熱抵抗体が位置する第1部分と、前記第1部分の周囲を取り囲む第2部分と、前記第1部分と前記第2部分との間に設けられた溝部と、を有し、
前記第1部分の表面粗さが、前記第2部分の表面粗さより大きい構成である。
前記絶縁基体の前記第2面に設けられた発熱抵抗体と、を備え、
前記第2面は、前記発熱抵抗体が位置する第1部分と、前記第1部分の周囲を取り囲む第2部分と、前記第1部分と前記第2部分との間に設けられた溝部と、を有し、
前記第1部分の表面粗さが、前記第2部分の表面粗さより大きい構成である。
1a 第1面
1b 第2面
2 支持体
2a 第1面
2b 第2面
3 接合材
4 発熱抵抗体
5 多孔質部材
7 第2貫通孔
9 第1貫通孔
21 第1部分
22 第2部分
22A 第2部分
22B 第2部分
23 第1溝部
23A 第1溝部
24 第3部分
25 第2溝部
100 試料保持具
Claims (8)
- 試料保持面である第1面および該第1面と反対側の第2面を有する板状の絶縁基体と、
前記絶縁基体の前記第2面に設けられた発熱抵抗体と、を備え、
前記第2面は、前記発熱抵抗体が位置する第1部分と、前記第1部分の周囲を取り囲む第2部分と、前記第1部分と前記第2部分との間に設けられた溝部と、を有し、
前記第1部分の表面粗さが、前記第2部分の表面粗さより大きい試料保持具。 - 前記溝部の表面粗さが、前記第2部分の表面粗さより大きい、請求項1記載の試料保持具。
- 前記第1部分の前記第1面からの距離は、前記第2部分の前記第1面からの距離より大きい、請求項1または2記載の試料保持具。
- 前記第1部分の前記第1面からの距離は、前記第2部分の前記第1面からの距離より小さい、請求項1または2記載の試料保持具。
- 前記溝部の縁部分および前記溝部の内壁面と底面とが交差する交差部分は、R形状である、請求項1~4のいずれか1つに記載の試料保持具。
- 前記溝部の幅は、開口から底面に向かうにつれて小さくなる、請求項1~5のいずれか1つに記載の試料保持具。
- 前記絶縁基体は、前記第1面から前記第2面まで貫通する貫通孔を有し、
前記第2面は、前記貫通孔の開口周囲に位置する第3部分と、前記第1部分と前記第3部分との間に設けられた第2溝部と、をさらに有し、
前記第1部分の表面粗さが、前記第3部分の表面粗さより大きい、請求項1~6のいずれか1つに記載の試料保持具。 - 前記絶縁基体の前記第2面を支持する、金属製の支持体をさらに備える、請求項1~7のいずれか1つに記載の試料保持具。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/429,367 US20220148901A1 (en) | 2019-02-21 | 2020-02-20 | Sample holder |
CN202080012876.1A CN113396535B (zh) | 2019-02-21 | 2020-02-20 | 试样保持工具 |
KR1020217024517A KR102611059B1 (ko) | 2019-02-21 | 2020-02-20 | 시료 유지구 |
JP2021502147A JP7116241B2 (ja) | 2019-02-21 | 2020-02-20 | 試料保持具 |
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JP2019-029711 | 2019-02-21 | ||
JP2019029711 | 2019-02-21 |
Publications (1)
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WO2020171179A1 true WO2020171179A1 (ja) | 2020-08-27 |
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PCT/JP2020/006876 WO2020171179A1 (ja) | 2019-02-21 | 2020-02-20 | 試料保持具 |
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US (1) | US20220148901A1 (ja) |
JP (1) | JP7116241B2 (ja) |
KR (1) | KR102611059B1 (ja) |
CN (1) | CN113396535B (ja) |
WO (1) | WO2020171179A1 (ja) |
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JPH07307377A (ja) * | 1993-12-27 | 1995-11-21 | Shin Etsu Chem Co Ltd | 静電チャック付セラミックスヒーター |
JP2000252353A (ja) * | 1999-02-26 | 2000-09-14 | Toshiba Ceramics Co Ltd | 静電チャックとその製造方法 |
WO2001091166A1 (fr) * | 2000-05-26 | 2001-11-29 | Ibiden Co., Ltd. | Dispositif de fabrication et de controle d'un semi-conducteur |
WO2014119637A1 (ja) * | 2013-01-30 | 2014-08-07 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置 |
WO2017033738A1 (ja) * | 2015-08-27 | 2017-03-02 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2017163409A1 (ja) * | 2016-03-25 | 2017-09-28 | 株式会社日立国際電気 | 基板支持台、基板処理装置および半導体装置の製造方法 |
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JP5267603B2 (ja) | 2010-03-24 | 2013-08-21 | Toto株式会社 | 静電チャック |
JP2014027207A (ja) * | 2012-07-30 | 2014-02-06 | Hitachi Chemical Co Ltd | 誘電体及びこの誘電体を用いた静電チャック |
JP6782157B2 (ja) * | 2016-12-20 | 2020-11-11 | 日本特殊陶業株式会社 | 静電チャック |
-
2020
- 2020-02-20 WO PCT/JP2020/006876 patent/WO2020171179A1/ja active Application Filing
- 2020-02-20 US US17/429,367 patent/US20220148901A1/en active Pending
- 2020-02-20 KR KR1020217024517A patent/KR102611059B1/ko active IP Right Grant
- 2020-02-20 CN CN202080012876.1A patent/CN113396535B/zh active Active
- 2020-02-20 JP JP2021502147A patent/JP7116241B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07307377A (ja) * | 1993-12-27 | 1995-11-21 | Shin Etsu Chem Co Ltd | 静電チャック付セラミックスヒーター |
JP2000252353A (ja) * | 1999-02-26 | 2000-09-14 | Toshiba Ceramics Co Ltd | 静電チャックとその製造方法 |
WO2001091166A1 (fr) * | 2000-05-26 | 2001-11-29 | Ibiden Co., Ltd. | Dispositif de fabrication et de controle d'un semi-conducteur |
WO2014119637A1 (ja) * | 2013-01-30 | 2014-08-07 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置 |
WO2017033738A1 (ja) * | 2015-08-27 | 2017-03-02 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2017163409A1 (ja) * | 2016-03-25 | 2017-09-28 | 株式会社日立国際電気 | 基板支持台、基板処理装置および半導体装置の製造方法 |
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KR20210109609A (ko) | 2021-09-06 |
US20220148901A1 (en) | 2022-05-12 |
JPWO2020171179A1 (ja) | 2021-12-09 |
CN113396535B (zh) | 2024-01-19 |
CN113396535A (zh) | 2021-09-14 |
KR102611059B1 (ko) | 2023-12-07 |
JP7116241B2 (ja) | 2022-08-09 |
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