WO2022264729A1 - セラミックスヒータおよび保持部材 - Google Patents
セラミックスヒータおよび保持部材 Download PDFInfo
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- WO2022264729A1 WO2022264729A1 PCT/JP2022/020342 JP2022020342W WO2022264729A1 WO 2022264729 A1 WO2022264729 A1 WO 2022264729A1 JP 2022020342 W JP2022020342 W JP 2022020342W WO 2022264729 A1 WO2022264729 A1 WO 2022264729A1
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- Prior art keywords
- pair
- folded
- heating
- heating element
- folded portion
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- 239000000919 ceramic Substances 0.000 title claims abstract description 88
- 238000010438 heat treatment Methods 0.000 claims abstract description 156
- 238000000926 separation method Methods 0.000 claims abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 13
- 230000020169 heat generation Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 9
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
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- 229920005989 resin Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/016—Heaters using particular connecting means
Definitions
- the present disclosure relates to a ceramic susceptor and a holding member that holds an object.
- Patent Document 1 discloses a wafer heating apparatus used in a film formation apparatus and an etching apparatus in the manufacturing process of semiconductor devices.
- a heater pattern for heating a wafer is embedded inside a ceramic substrate having a wafer support surface.
- the present disclosure has been made to solve the above-described problems, and an object thereof is to provide a ceramic susceptor capable of improving surface uniformity, and a holding member having this ceramic susceptor.
- a plate-shaped ceramic susceptor having a ceramic substrate and a heating element embedded in the ceramic substrate and having linear heating lines formed substantially concentrically.
- the heating element when viewed from the thickness direction of the ceramic susceptor, the heating element is arranged in the circumferential direction of the heating element as a pair of heating lines composed of two adjacent heating lines in the radial direction of the heating element.
- a first heating line pair and a second heating line pair that are arranged apart from each other across a predetermined separation area, and the ends of the two heating lines that constitute the first heating line pair on the separation area side.
- the distance between the first folded portion and the second folded portion at one end portion of the pair of folded portions in the radial direction of the heating element is The gap between the first folded portion and the second folded portion at the central portion of the pair of folded portions in the radial direction of the heating element is narrower.
- the space between the pair of folded portions is narrowed at the position of the one radial end, the amount of heat around the one radial end can be increased. Therefore, it is possible to suppress the occurrence of cold spots in the vicinity of the one radial end where the temperature tends to decrease.
- the space between the pair of folded portions is widened at the radially central position, the amount of heating around the radially central portion can be reduced. Therefore, it is possible to suppress the occurrence of hot spots around the central portion in the radial direction where the temperature tends to rise. Therefore, the temperature distribution around the pair of folded portions can be improved, and the uniformity of heat on the surface of the ceramic susceptor can be improved.
- the end portion of the pair of folded portions on one side in the radial direction of the heating element is the end portion of the pair of folded portions on the outer peripheral side in the radial direction of the heating element.
- the distance between the first folded portion and the second folded portion at the radially outer end of the heating element of the folded portion is the radially inner end of the heating element of the pair of folded portions. is preferably narrower than the interval between the first folded portion and the second folded portion in the portion.
- the space between the pair of folded portions is narrowed at the position of the end portion on the radially outer peripheral side, the amount of heat around the end portion on the radially outer peripheral side can be increased. Therefore, the periphery of the radially outer edge where the temperature tends to decrease, that is, the portion where the heating element is not arranged due to the folding back of the heating element (more specifically, the portion located radially on the outer peripheral side of the separation area) ), the occurrence of cold spots can be suppressed. Therefore, it is possible to improve the temperature uniformity on the surface of the heater.
- a plate-like ceramic susceptor having a ceramic substrate and a heating element embedded in the ceramic substrate and having linear heating lines formed substantially concentrically. wherein, when viewed from the thickness direction of the ceramic susceptor, the heating element is configured as a pair of heating lines composed of two adjacent heating lines in the radial direction of the heating element.
- a first heating line pair and a second heating line pair that are arranged apart from each other across a predetermined separation area at and ends of the two heating lines that constitute the first heating line pair on the separation area side and a second folded portion for connecting ends of the two heating lines constituting the second heating line pair on the side of the separation region, wherein the first folded portion and In the pair of folded portions including the second folded portion, the interval between the first folded portion and the second folded portion at the end portion of the pair of folded portions on the outer peripheral side in the radial direction of the heating element is The space between the first folded portion and the second folded portion at the radially inner end portion of the pair of folded portions is narrower than the second folded portion.
- the space between the pair of folded portions is narrowed at the position of the end portion on the radially outer peripheral side, the amount of heat around the end portion on the radially outer peripheral side can be increased. Therefore, it is possible to suppress the occurrence of cold spots in the periphery of the radially outer end portion where the temperature tends to decrease, that is, in the portion where the heating element is not disposed due to the folding back of the heating element. Therefore, it is possible to improve the temperature uniformity on the surface of the heater.
- the distance between the first folded portion and the second folded portion is from the radially inner end of the heat generator to the radially outer end of the heat generator. Narrowing towards the position of the part is preferred.
- the amount of heating can be increased from the position of the end portion on the inner peripheral side in the radial direction toward the position of the end portion on the outer peripheral side in the pair of folded portions. Therefore, the uniformity of heat on the surface of the heater can be improved more effectively.
- the pair of folded portions be formed at the outermost periphery of the heating element.
- the temperature tends to decrease because the heating element is not arranged.
- the temperature tends to drop significantly in the portion on the outer peripheral side in the radial direction of the region, and cold spots are likely to occur. Therefore, according to this aspect, in the pair of folded portions on the outermost periphery of the heating element, the amount of heating around the end portion on the outer peripheral side in the radial direction can be increased. It is possible to suppress the occurrence of cold spots in the portion on the outer peripheral side in the radial direction of the separation region between the folded portions.
- the ceramic substrate includes a first portion having a holding surface for holding an object, and a side opposite to the holding surface with respect to the first portion in the thickness direction of the ceramic susceptor. and a second portion having an outer circumference larger than that of the first portion when viewed from the thickness direction of the ceramic susceptor, and the heating element is preferably provided in the first portion.
- the temperature tends to drop because the heating element is not arranged, and cold spots are likely to occur. Therefore, according to this aspect, since the space between the pair of folded portions is narrowed at the position of the end portion on the radially outer peripheral side, the amount of heating around the end portion on the radially outer peripheral side can be increased. . Therefore, it is possible to suppress the occurrence of cold spots in the periphery of the radially outer end portion where the temperature tends to decrease, that is, in the portion where the heating element is not disposed due to the folding back of the heating element. Therefore, it is possible to improve the temperature uniformity on the surface of the heater.
- the heat generating element is provided at the second portion, heat may escape in the outer peripheral direction, but by providing the heat generating element at the first portion, the heat is less likely to escape to the outer peripheral side. Therefore, the holding surface that holds the object can be heated more effectively. Therefore, it is possible to suppress the occurrence of cold spots and improve heat uniformity.
- the heating lines forming the first heating line pair are positioned on the side of the separation region.
- An inner peripheral side of a corner where the end portion and the first folded portion are connected, and an end portion of the heating line constituting the second heating line pair on the separation region side and the second folded portion are connected. It is preferable that at least one of the corners on the inner circumference side is formed in an R shape.
- the ceramic susceptor and the holding member of the present disclosure it is possible to improve the temperature uniformity of the surface of the ceramic susceptor.
- FIG. 1 is a schematic perspective view of an electrostatic chuck of this embodiment
- FIG. 2 is an XY plan view of the electrostatic chuck of the embodiment
- FIG. It is an XZ sectional view of the ceramics member of this embodiment.
- 4 is a top view of the heating element of this embodiment
- FIG. FIG. 2 is an enlarged view of a pair of folded portions located at the outermost periphery of the heating element and its surroundings in the embodiment
- FIG. 10 is a diagram showing a modification of a pair of folded portions located on the outermost periphery of the heating element
- FIG. 10 is a diagram showing a modification of a pair of folded portions located on the outermost periphery of the heating element;
- FIG. 10 is a diagram showing a modification of a pair of folded portions located on the outermost periphery of the heating element;
- FIG. 10 is a diagram showing a modification of a pair of folded portions located on the outermost periphery of the heating element;
- FIG. 10 is a diagram showing a modification of a pair of folded portions located on the outermost periphery of the heating element;
- FIG. 2 is an enlarged view of a pair of folded portions at the outermost periphery of a heating element in the prior art and their surroundings.
- 3 shows the evaluation results of the temperature distribution of a pair of folded portions located at the outermost periphery of the heating element on the holding surface of the ceramic member in the prior art and portions corresponding to the surrounding positions.
- a ceramic member 10 is exemplified as a ceramic susceptor
- an electrostatic chuck 1 is exemplified as a holding member.
- the electrostatic chuck 1 of this embodiment is a device that attracts and holds a semiconductor wafer W by electrostatic attraction, and is used, for example, to fix the semiconductor wafer W in a vacuum chamber of a semiconductor manufacturing apparatus.
- the semiconductor wafer W is an example of the "object" of the present disclosure.
- the electrostatic chuck 1 has a ceramic member 10, a base member 20, and a joining layer 30 that joins the ceramic member 10 and the base member 20 together.
- the ceramic member 10 is an example of the "ceramic heater” or “ceramic substrate” of the present disclosure.
- the XYZ axes are defined as shown in FIG. 1 for convenience of explanation.
- the Z-axis is the axis in the central axis Ca direction of the electrostatic chuck 1 (vertical direction in FIG. 1)
- the X-axis and the Y-axis are radial axes of the electrostatic chuck 1 .
- the ceramic member 10 is a plate-like member, more specifically, a disc-like member, and is formed of ceramics (ceramic substrate).
- the ceramic member 10 is composed of two discs with different diameters overlapping each other with a central axis Ca (see FIG. 2) in common (more specifically, a small It has a stepped disc shape in which the disc-shaped upper step portion 10a having a diameter overlaps.
- the lower step portion 10b is provided on the side opposite to the holding surface 11 side with respect to the upper step portion 10a with respect to the thickness direction of the ceramic member 10 (the direction coinciding with the Z-axis direction, the vertical direction). It has an outer circumference larger than that of the upper step portion 10a when viewed from the thickness direction of the .
- the upper part 10a is an example of the "first part” of the present disclosure
- the lower part 10b is an example of the "second part”.
- main component means a component with the highest content (for example, a component with a volume content of 90 vol % or more).
- the ceramic member 10 has a holding surface 11 (upper surface) that holds the semiconductor wafer W, and a side opposite to the holding surface 11 in the thickness direction (that is, the Z-axis direction) of the ceramic member 10. and a lower surface 12 provided on the . Further, in the present embodiment, the upper step portion 10a is provided with a holding surface 11. As shown in FIG. Note that the holding surface 11 is an example of the surface of the "ceramic susceptor" of the present disclosure.
- the diameter of the ceramic member 10 is larger at the lower portion 10b than at the upper portion 10a, with the upper portion 10a having a diameter of about 150 to 300 mm, and the lower portion 10b having a diameter of about 180 to 400 mm.
- the thickness of the ceramic member 10 is, for example, about 2 to 6 mm.
- the thermal conductivity of the ceramic member 10 is desirably in the range of 10 to 50 W/mK (more preferably 18 to 30 W/mK).
- the ceramic member 10 also includes a chuck electrode (attraction electrode) (not shown) inside.
- a chuck electrode attraction electrode
- electrostatic attraction is generated in the chuck electrode, and the semiconductor wafer W is attracted and held by the holding surface 11 by this electrostatic attraction.
- the base member 20 is arranged on the side opposite to the holding surface 11 side with respect to the ceramic member 10 .
- This base member 20 is formed in a cylindrical shape, for example.
- the base member 20 is made of, for example, a metal (for example, aluminum or an aluminum alloy), but may be made of a material other than metal.
- the base member 20 includes an upper surface 21 and a lower surface 22 provided on the side opposite to the upper surface 21 in the thickness direction (that is, the Z-axis direction) of the base member 20. .
- the upper surface 21 of the base member 20 is thermally connected to the lower surface 12 of the ceramic member 10 via the bonding layer 30 .
- the diameter of the base member 20 is, for example, about 180-400 mm. Also, the thickness (dimension in the Z-axis direction) of the base member 20 is, for example, about 20 to 50 mm.
- the thermal conductivity of the base member 20 (assumed to be aluminum) is desirably within the range of 160 to 250 W/mK (preferably about 230 W/mK).
- the joining layer 30 is arranged between the lower surface 12 of the ceramic member 10 and the upper surface 21 of the base member 20, and joins the ceramic member 10 and the base member 20 in a heat transferable manner.
- the bonding layer 30 is made of an adhesive made of a resin (silicone-based resin, acrylic-based resin, epoxy-based resin, etc.) containing a thermally conductive filler.
- the thickness (dimension in the Z-axis direction) of the bonding layer 30 is, for example, approximately 0.1 to 1.5 mm.
- the thermal conductivity of the bonding layer 30 is, for example, 1.0 W/mK.
- the thermal conductivity of the bonding layer 30 (assumed to be a silicone-based resin) is desirably in the range of 0.1 to 2.0 W/mK (preferably 0.5 to 1.5 W/mK).
- a heating element 41 is provided inside the upper stage portion 10a of the ceramic member 10. As shown in FIG. That is, the heating element 41 is embedded in the upper step portion 10a of the ceramic member 10. As shown in FIG. Note that the heating element 41 generates heat to heat the semiconductor wafer W. As shown in FIG.
- the heating element 41 is made of, for example, tungsten or molybdenum alloy, but may be made of other metals.
- the heating element 41 has linear heating lines 42 formed substantially concentrically when viewed from the thickness direction of the ceramic member 10.
- the line width of the heating lines 42 is zero.
- a pair of heat generating lines 43 each having a diameter of about 1 mm to 1.0 mm and composed of two heat generating lines 42 arranged side by side (at least partially) in the radial direction of the heat generating element 41 is provided. .
- the two heat generating lines 42 forming the pair of heat generating lines 43 are formed in the same circular shape.
- the heating element 41 has a large number of pairs of heating lines 43 in the example shown in FIG. 4, it may have at least two pairs of heating lines 43 .
- the heating element 41 includes a first heating line pair 43a and a second heating line pair 43b as the pair of heating lines 43.
- the first heat generating line pair 43 a and the second heat generating line pair 43 b are arranged apart from each other with a predetermined separation region 44 interposed therebetween in the circumferential direction of the heat generating element 41 .
- the heating element 41 also has a first folded portion 45a and a second folded portion 45b as a pair of folded portions 45. As shown in FIG.
- the first folded portion 45a and the second folded portion 45b are arranged apart from each other with a predetermined separation region 44 interposed therebetween in the circumferential direction of the heating element 41 .
- the first folded portion 45a connects the ends 42a of the two heat generating lines 42 constituting the first heat generating line pair 43a on the separation region 44 side.
- the second folded portion 45b connects the ends 42b of the two heat generating lines 42 forming the second heat generating line pair 43b on the separation region 44 side.
- FIG. 5 shows the pair of heating lines 43, the separation region 44, and the pair of folded portions 45 at the outermost position of the heat generating element 41, the positions other than the outermost position of the heat generating element 41 are similarly shown. It has a pair of heating lines 43 , a separation region 44 and a pair of folded portions 45 .
- the heating line 42 of the heating element 41 is folded back at the pair of folded portions 45 so that the portion where the heating element 41 is not arranged (more specifically, the outer peripheral side of the separation region 44 (outer periphery in the radial direction) 9), a cold spot (temperature singular point) was generated, and it was difficult to maintain the temperature uniformity of the holding surface 11.
- FIG. 10 as a result of evaluating the temperature distribution on the holding surface 11 , a result was obtained in which a low temperature region was generated at a position on the outer peripheral side of the holding surface 11 .
- FIGS. A pair of folded portions 45 are formed in a V-shape (formed so as to narrow toward the outer peripheral side of the heating element 41).
- the space ⁇ between the first folded portion 45a and the second folded portion 45b (hereinafter simply referred to as “the space ⁇ ”) moves toward the outer circumference of the heating element 41 (upper side in FIGS. 4 and 5). gradually becomes narrower.
- the distance .delta the position of the outer peripheral side end portion 45-2 (the radially outer peripheral side end portion) of the pair of folded portions 45 is narrowed. That is, with respect to the interval ⁇ , the interval ⁇ 2 on the outer peripheral side is narrower than the interval ⁇ 1 on the inner peripheral side. In addition, the space ⁇ 2 on the outer peripheral side is narrowed while maintaining a distance that does not cause a short circuit.
- the interval ⁇ 1 on the inner peripheral side is the interval ⁇ between the pair of folded portions 45 at the positions of the ends 45-1 on the inner peripheral side in the radial direction of the heating element 41.
- the space ⁇ 2 on the outer peripheral side is the space ⁇ between the pair of folded portions 45 at the position of the end portion 45-2 on the outer peripheral side of the heating element 41 in the radial direction.
- the interval ⁇ 1 on the inner peripheral side and the interval ⁇ 2 on the outer peripheral side are 0.5 mm to 5.0 mm.
- the interval ⁇ 1 on the inner peripheral side is 3.5 mm
- the interval ⁇ 2 on the outer peripheral side is 1.0 mm. .
- end 45-1 on the inner peripheral side and the end 45-2 on the outer peripheral side are examples of the "end on one side in the radial direction" in the present disclosure.
- end portion 45-2 on the outer peripheral side is an example of the “end portion on the outer peripheral side in the radial direction” of the present disclosure.
- the center portion 45-3 is the same distance as the inner peripheral side end portion 45-1 and the outer peripheral side end portion 45-2 (that is, one end and the other end in the radial direction of the heating element 41). position.
- the space ⁇ is narrowed at the position of the end 45-2 on the outer peripheral side.
- the amount of heating around the portion 45-2 can be increased. Therefore, at the position of the outermost periphery of the heating element 41, the periphery of the outer edge portion 45-2 where the temperature tends to decrease, that is, the heating line 42 of the heating element 41 is folded back at the pair of folded portions 45. Therefore, it is possible to suppress the occurrence of cold spots in the portion where the heating element 41 is not arranged (more specifically, the portion on the outer peripheral side (upper side in FIG. 5) of the isolation region 44). Therefore, the uniformity of heat on the holding surface 11 of the ceramic member 10 can be improved.
- the interval ⁇ between the pair of folded portions 45 at one end portion in the radial direction of the heating element 41, that is, the interval ⁇ 2 on the outer peripheral side is narrower than the interval ⁇ 3 at the central portion.
- the distance ⁇ is wider at the position of the radial center portion 45-3 than at the position of the outer peripheral side end portion 45-2, the distance between the radial center portions 45-3 of the pair of folded portions 45 is increased. It is possible to reduce the amount of heating in the surrounding area. Therefore, it is possible to suppress the occurrence of hot spots in the vicinity of the radial center portion 45-3 of the pair of folded portions 45 where the temperature tends to rise.
- the space ⁇ 2 on the outer peripheral side is narrower than the space ⁇ 1 on the inner peripheral side.
- the space ⁇ is narrowed at the position of the end 45-2 on the outer peripheral side, the amount of heat around the end 45-2 on the outer peripheral side can be increased. Therefore, it is possible to suppress the occurrence of cold spots around the end 45-2 on the outer peripheral side where the temperature tends to decrease. Therefore, the uniformity of heat on the holding surface 11 of the ceramic member 10 can be improved.
- the interval ⁇ gradually narrows from the position of the end 45-1 on the inner peripheral side toward the position of the end 45-2 on the outer peripheral side.
- the heating amount can be increased from the position of the end 45-1 on the inner peripheral side to the position of the end 45-2 on the outer peripheral side of the pair of folded-back portions 45. Therefore, the uniformity of heat on the holding surface 11 of the ceramic member 10 can be improved more effectively.
- the pair of folded portions 45 that is, the pair of folded portions 45 in the shape of a V-shape are formed at the outermost periphery of the heating element 41 .
- such a heating element 41 is provided inside the upper stage portion 10 a of the ceramic member 10 .
- the heating element 41 In the outer peripheral portion of the lower portion 10b that is larger than the upper portion 10a, since the heating element 41 is not arranged, the temperature tends to drop, and cold spots are likely to occur. Therefore, according to the present embodiment, since the distance ⁇ is narrowed at the position of the outer end 45-2, the amount of heat around the outer end 45-2 can be increased. Therefore, it is possible to suppress the occurrence of cold spots around the edge 45-2 on the outer peripheral side where the temperature tends to drop, that is, in the portion where the heating element 41 is not disposed due to the heating element 41 being folded back. Therefore, the uniformity of heat on the holding surface 11 of the ceramic member 10 can be improved.
- the heating element 41 is provided in the lower part 10b, heat may escape in the outer peripheral direction, but by providing the heating element 41 in the upper part 10a, the heat is less likely to escape to the outer peripheral side. Therefore, the holding surface 11 can be heated more effectively. Therefore, it is possible to suppress the occurrence of cold spots and improve heat uniformity.
- the inner peripheral side of the corner portion 46a and the inner peripheral side of the corner portion 46b are the rounded portions 47. and may be formed in an R shape (that is, an arc shape).
- the corner portion 46a is a portion on the outer peripheral side where the end portion 42a of the heat generating line 42 constituting the first heat generating line pair 43a on the separation region 44 side and the first folded portion 45a are connected.
- the corner portion 46b is a portion on the outer peripheral side where the ends 42a of the heat generating lines 42 constituting the second heat generating line pair 43b on the separation region 44 side are connected to the second folded portions 45b.
- a curvature radius R of the R-shaped portion 47 is, for example, 0.05 mm to 0.3 mm, and is 0.1 mm as an example.
- the width of the heating line 42 can be increased at the corners 46a and 46b that are formed to have acute angles, so that the generation of cracks in the heating line 42 can be suppressed.
- the pair of folded portions 45 may be formed stepwise as shown in FIG.
- the first folded portion 45a and the second folded portion 45b are shifted toward the separation region 44 in the vicinity of the position of the end portion 45-2 on the outer peripheral side. are formed in steps.
- the pair of folded portions 45 may be arranged at an inner peripheral end portion 45-1 or an outer peripheral end portion 45 from a radial center portion 45-3.
- the first folded portion 45a and the second folded portion 45b may be formed in an arc shape or a " ⁇ " shape so that the interval ⁇ becomes narrower toward ⁇ 2. In this way, the distance .delta. The position of 2 may be narrowed.
- a plurality of pairs of folded portions 45 are formed, and are also formed at positions other than the outermost peripheral position of the heating element 41 .
- a pair of folded portions 45 having a V shape, a stepped shape, an arc shape, or a " ⁇ " shape is formed. It is good if it is.
- the pair of folded portions 45 are formed in a V-shape formed so as to narrow toward the inner peripheral side of the heating element 41, thereby reducing the gap.
- ⁇ may be gradually narrowed toward the inner peripheral side of the heating element 41 .
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Abstract
Description
本実施形態の静電チャック1は、半導体ウエハWを静電引力により吸着して保持する装置であり、例えば、半導体製造装置の真空チャンバ内で半導体ウエハWを固定するために使用される。なお、半導体ウエハWは、本開示の「対象物」の一例である。
本実施形態では、図3に示すように、セラミックス部材10の上段部10aの内部に、発熱体41が設けられている。すなわち、発熱体41が、セラミックス部材10の上段部10aに埋設されている。なお、発熱体41は、半導体ウエハWを加熱するために発熱するものである。発熱体41は、例えばタングステンやモリブデン合金等により形成されているが、その他の金属であってもよい。
ここで、前記のように発熱体41がセラミックス部材10の上段部10aの内部に設けられている場合に、従来技術では、発熱体41の最外周の位置にて、第1折り返し部45aと第2折り返し部45bとの間隔δについて、発熱体41の径方向に沿って一定であった、あるいは、図9に示すように発熱体41の径方向の内周側の間隔δ(図中、δ1)よりも外周側の間隔δ(図中、δ2)のほうが広かった。
以上のように本実施形態では、一対の折り返し部45の発熱体41の径方向の一方側の端部における間隔δ、すなわち、外周側の間隔δ2は、中央部の間隔δ3より狭い。
10 セラミックス部材
10a 上段部
11 保持面
41 発熱体
42 発熱ライン
42a (発熱ラインの分離領域側の)端部
43 一対の発熱ライン
43a 第1発熱ライン対
43b 第2発熱ライン対
44 分離領域
45 一対の折り返し部
45a 第1折り返し部
45b 第2折り返し部
45-1 (一対の折り返し部の)内周側の端部
45-2 (一対の折り返し部の)外周側の端部
45-3 (一対の折り返し部の)径方向の中央部
46a 角部
46b 角部
47 R形状部
W 半導体ウエハ
δ (第1折り返し部と第2折り返し部との)間隔
δ1 内周側の間隔
δ2 外周側の間隔
δ3 中央部の間隔
α 部分
R 曲率半径
Claims (8)
- セラミックス基板と、
前記セラミックス基板に埋設され、線状の発熱ラインが略同心円状に形成される発熱体を有する板状のセラミックスヒータにおいて、
前記セラミックスヒータの厚み方向から見たときに、
前記発熱体は、
前記発熱体の径方向にて隣り合う2つの前記発熱ラインから構成される一対の発熱ラインとして、前記発熱体の周方向にて所定の分離領域を挟んで離れて配置される第1発熱ライン対および第2発熱ライン対と、
前記第1発熱ライン対を構成する2つの前記発熱ラインの前記分離領域側の端部同士を接続する第1折り返し部と、
前記第2発熱ライン対を構成する2つの前記発熱ラインの前記分離領域側の端部同士を接続する第2折り返し部と、
を備え、
前記第1折り返し部と前記第2折り返し部とからなる一対の折り返し部にて、
前記一対の折り返し部の前記発熱体の径方向の一方側の端部における前記第1折り返し部と前記第2折り返し部との間隔は、前記一対の折り返し部の前記発熱体の径方向の中央部における前記第1折り返し部と前記第2折り返し部との間隔より狭いこと、
を特徴とするセラミックスヒータ。 - 請求項1のセラミックスヒータにおいて、
前記一対の折り返し部の前記発熱体の径方向の一方側の端部は、前記一対の折り返し部の前記発熱体の径方向の外周側の端部であり、
前記一対の折り返し部の前記発熱体の径方向の外周側の端部における前記第1折り返し部と前記第2折り返し部との間隔は、前記一対の折り返し部の前記発熱体の径方向の内周側の端部における前記第1折り返し部と前記第2折り返し部との間隔より狭いこと、
を特徴とするセラミックスヒータ。 - セラミックス基板と、
前記セラミックス基板に埋設され、線状の発熱ラインが略同心円状に形成される発熱体を有する板状のセラミックスヒータにおいて、
前記セラミックスヒータの厚み方向から見たときに、
前記発熱体は、
前記発熱体の径方向にて隣り合う2つの前記発熱ラインから構成される一対の発熱ラインとして、前記発熱体の周方向にて所定の分離領域を挟んで離れて配置される第1発熱ライン対および第2発熱ライン対と、
前記第1発熱ライン対を構成する2つの前記発熱ラインの前記分離領域側の端部同士を接続する第1折り返し部と、
前記第2発熱ライン対を構成する2つの前記発熱ラインの前記分離領域側の端部同士を接続する第2折り返し部と、
を備え、
前記第1折り返し部と前記第2折り返し部とからなる一対の折り返し部にて、
前記一対の折り返し部の前記発熱体の径方向の外周側の端部における前記第1折り返し部と前記第2折り返し部との間隔は、前記一対の折り返し部の前記発熱体の径方向の内周側の端部における前記第1折り返し部と前記第2折り返し部との間隔より狭いこと、
を特徴とするセラミックスヒータ。 - 請求項2または3のセラミックスヒータにおいて、
前記第1折り返し部と前記第2折り返し部との間隔は、前記発熱体の径方向の内周側の端部の位置から、前記発熱体の径方向の外周側の端部の位置に向かうに連れて、狭くなること、
を特徴とするセラミックスヒータ。 - 請求項2乃至4のいずれか1つのセラミックスヒータにおいて、
前記発熱体の最外周の位置に、前記一対の折り返し部が形成されていること、
を特徴とするセラミックスヒータ。 - 請求項1乃至5のいずれか1つのセラミックスヒータにおいて、
前記セラミックス基板は、
対象物を保持する保持面を備える第1部位と、
前記セラミックスヒータの厚み方向について前記第1部位に対して前記保持面側とは反対側に設けられ、前記セラミックスヒータの厚み方向から見たときに前記第1部位より大きい外周を有する第2部位と、を備え、
前記発熱体は、前記第1部位に設けられること、
を特徴とするセラミックスヒータ。 - 請求項1乃至6のいずれか1つのセラミックスヒータにおいて、
前記一対の折り返し部における前記発熱体の径方向の一方側または外周側の端部の位置にて、
前記第1発熱ライン対を構成する前記発熱ラインの前記分離領域側の端部と前記第1折り返し部とが接続する角部の内周側、および、前記第2発熱ライン対を構成する前記発熱ラインの前記分離領域側の端部と前記第2折り返し部とが接続する角部の内周側の少なくとも一方が、R形状に形成されていること、
を特徴とするセラミックスヒータ。 - 請求項1乃至7のいずれか1つのセラミックスヒータを有することを特徴とする、対象物を保持する保持部材。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002015841A (ja) * | 2000-04-29 | 2002-01-18 | Ibiden Co Ltd | セラミックヒータ |
JP2003249330A (ja) * | 2002-02-27 | 2003-09-05 | Toshiba Ceramics Co Ltd | 箔状抵抗発熱素子、その製造方法及び面状ヒーター |
WO2018143288A1 (ja) * | 2017-02-01 | 2018-08-09 | 日本特殊陶業株式会社 | 保持装置 |
JP2019194939A (ja) * | 2018-05-01 | 2019-11-07 | 日本特殊陶業株式会社 | セラミックスヒータ |
JP2021068652A (ja) * | 2019-10-25 | 2021-04-30 | 京セラ株式会社 | ヒータ |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002015841A (ja) * | 2000-04-29 | 2002-01-18 | Ibiden Co Ltd | セラミックヒータ |
JP2003249330A (ja) * | 2002-02-27 | 2003-09-05 | Toshiba Ceramics Co Ltd | 箔状抵抗発熱素子、その製造方法及び面状ヒーター |
WO2018143288A1 (ja) * | 2017-02-01 | 2018-08-09 | 日本特殊陶業株式会社 | 保持装置 |
JP2019194939A (ja) * | 2018-05-01 | 2019-11-07 | 日本特殊陶業株式会社 | セラミックスヒータ |
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