WO2017033738A1 - 静電チャック装置 - Google Patents
静電チャック装置 Download PDFInfo
- Publication number
- WO2017033738A1 WO2017033738A1 PCT/JP2016/073428 JP2016073428W WO2017033738A1 WO 2017033738 A1 WO2017033738 A1 WO 2017033738A1 JP 2016073428 W JP2016073428 W JP 2016073428W WO 2017033738 A1 WO2017033738 A1 WO 2017033738A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrostatic chuck
- electrostatic
- bank
- electrode
- temperature adjusting
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000000919 ceramic Substances 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims abstract description 34
- 229920005989 resin Polymers 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 75
- 239000012790 adhesive layer Substances 0.000 claims description 49
- 238000001179 sorption measurement Methods 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 abstract description 8
- 230000004048 modification Effects 0.000 description 28
- 238000012986 modification Methods 0.000 description 28
- 230000015556 catabolic process Effects 0.000 description 12
- 239000002131 composite material Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000000112 cooling gas Substances 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OBOUWLBQUVHNJT-UHFFFAOYSA-N [O-2].[Y+3].[Mo+4] Chemical compound [O-2].[Y+3].[Mo+4] OBOUWLBQUVHNJT-UHFFFAOYSA-N 0.000 description 1
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 1
- QVGDHHIUWSXNBR-UHFFFAOYSA-N [W+4].[O-2].[Al+3] Chemical compound [W+4].[O-2].[Al+3] QVGDHHIUWSXNBR-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- VQLOCUKZAJRPAO-UHFFFAOYSA-N aluminum oxygen(2-) tantalum(5+) Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Ta+5] VQLOCUKZAJRPAO-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- -1 tungsten (W) Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Definitions
- the present invention relates to an electrostatic chuck device.
- This application claims priority based on Japanese Patent Application No. 2015-168230 filed in Japan on August 27, 2015, the contents of which are incorporated herein by reference.
- an electrostatic chuck apparatus using an electrostatic adsorption mechanism is used as an apparatus for simply mounting and fixing a plate-like sample such as a wafer or a glass substrate on a sample stage.
- a configuration of the electrostatic chuck device a configuration is known that includes a suction plate having a structure in which an electrode is embedded in a dielectric, and a support that supports the suction plate via an adhesive.
- the adhesive is etched by plasma or the like used in a semiconductor manufacturing process, which may affect the performance of the electrostatic chuck device. For this reason, in the electrostatic chuck apparatus described in Patent Document 1, the time until the adsorption layer disappears is delayed by providing a step shape on the adsorption plate and lengthening the path of the adhesive.
- the present invention has been made in view of such circumstances, and an object thereof is to provide an electrostatic chuck device capable of extending the life.
- the electrostatic chuck device is the following device.
- An electrostatic chuck and a temperature adjusting base are provided.
- the electrostatic chuck portion includes a ceramic plate having one surface on which a plate-like sample is placed, and the electrostatic chucking electrode provided on the other surface side of the ceramic plate.
- the temperature-adjusting base portion is a base portion that is disposed on the other surface side of the electrostatic attraction electrode and the ceramic plate side, and cools the electrostatic chuck portion
- the ceramic plate has a bank portion extending to the temperature adjusting base portion side and surrounding a periphery of the electrostatic adsorption electrode
- the base part for temperature adjustment has a groove part for accommodating a tip part of the bank part,
- An electrostatic chuck device in which a filling portion made of a resin material is filled between the groove portion and the bank portion.
- the electrostatic check device preferably includes the following features. These features may be combined with each other.
- the bank portion has a closed ring shape, and the groove portion is a ring-shaped groove corresponding to the bank portion.
- the bank is provided with a bank-side step that gradually decreases in width toward the tip of the temperature control base, and the groove corresponds to the bank-side step.
- a groove-side step is provided that becomes narrower toward the bottom side.
- a chamfer is applied to a tip portion of the bank portion on the temperature adjusting base portion side.
- a portion exposed to the outside of the filling portion is covered with an O-ring.
- the adhesive layer is divided into a part made of a first resin material and a part made of a second resin material having a higher plasma resistance than the first resin material, and is exposed to the outside of the adhesive layer.
- the portion is made of the second resin material.
- a first organic insulating layer is provided between the ceramic plate and the electrostatic adsorption electrode.
- a second organic insulating layer is provided between the temperature adjusting base and the electrostatic adsorption electrode.
- the electrostatic chuck device of the second aspect of the present invention is the following device.
- the electrostatic chuck apparatus of the second aspect can preferably include the preferred features of the apparatus of the first aspect as well.
- the ceramic plate has one surface, a mounting surface for mounting a plate-like sample, Electrostatic adsorption electrodes are installed on the ceramic plate,
- the base part for temperature adjustment is a base part that cools the ceramic plate from the side opposite to the mounting surface of the ceramic plate,
- the ceramic plate has a bank portion extending to the temperature adjusting base portion side and surrounding a periphery of the electrostatic adsorption electrode,
- the base portion for temperature adjustment has a groove portion that accommodates a tip portion of the bank portion,
- An electrostatic chuck device in which a filling portion made of a resin material is filled between the groove portion and the bank portion.
- the apparatus of the second aspect can preferably include preferable examples and preferable conditions of the apparatus of the first aspect as well.
- an electrostatic chuck device capable of extending the life.
- FIG. 1 is a cross-sectional view of the electrostatic chuck device 1.
- the electrostatic chuck device 1 of the present embodiment has a circular shape in plan view.
- the electrostatic chuck device 1 includes an electrostatic chuck unit 2 having an upper surface as a mounting surface 19 on which a plate-like sample W such as a semiconductor wafer is mounted, and temperature adjustment for adjusting the electrostatic chuck unit 2 to a desired temperature.
- the placement surface 19 side is indicated as “up”, and the temperature adjusting base 3 side is indicated as “down”, and the relative position of each component may be expressed. Further, the position of each part will be described as “outside (or radially outside)” and “inside (or radially inside)” with reference to the radial direction with respect to the central axis extending in the vertical direction of the electrostatic chuck device 1.
- the electrostatic chuck portion 2 has a mounting plate (ceramic plate) 11 having one surface (upper surface) as a mounting surface 19 on which a plate-like sample W such as a semiconductor wafer is mounted, and a mounting surface of the mounting plate 11.
- An electrostatic attraction electrode 13 provided on the surface opposite to 19 (the other surface), a first organic insulating layer 14 provided between the mounting plate 11 and the electrostatic attraction electrode 13, have.
- a plurality of protrusions 30 having a diameter smaller than the thickness of the plate-like sample W are formed on the mounting surface 19 of the electrostatic chuck portion 2.
- a plurality of protrusions 30 support the plate-like sample W.
- a peripheral wall 17 is formed on the periphery of the mounting surface 19. The peripheral wall 17 is formed at the same height as the protrusion 30, and supports the plate-like sample W together with the protrusion 30.
- the mounting plate 11 has a bank portion 5 that extends from the periphery of the lower surface 11a opposite to the mounting surface 19 to the temperature adjusting base 3 side (that is, the lower side).
- the bank portion 5 surrounds the first organic insulating layer 14 and the electrostatic adsorption electrode 13 located on the lower surface 11a side of the mounting plate 11 from the radially outer side.
- the planar view shape of the bank part 5 is an annular shape.
- the mounting plate 11 having the bank portion 5 can be formed, for example, by countersinking a ceramic plate to form the recess 11c.
- the thickness of the bank portion 5 (that is, the width dimension in the radial direction of the electrostatic chuck device 1) is preferably 0.3 mm or more and 1.0 mm or less. By setting it as such thickness, while ensuring sufficient mechanical strength, the heat capacity of the mounting plate 11 can be suppressed and the temperature responsiveness of the mounting plate 11 can be improved.
- the side surfaces of the first organic insulating layer 14 and the electrostatic adsorption electrode 13 are more resistant to plasma than the adhesive layer 8 through the adhesive layer 8 surrounding the electrode. It will be covered with high ceramics. Therefore, the first organic insulating layer 14 and the electrostatic adsorption electrode 13 are reliably protected from plasma as compared with the case where the bank portion 5 is not provided. With this structure, when a high voltage is applied to the electrostatic adsorption electrode 13, it is difficult to discharge from the side surfaces of the first organic insulating layer 14 and the electrostatic adsorption electrode 13, and the withstand voltage of the entire apparatus can be improved.
- the lower end portion 5 a of the bank portion 5 is accommodated in a groove portion 6 provided on the upper surface 3 a of the temperature adjusting base portion 3. That is, the tip portion 5 a of the bank portion 5 reaches the lower side from the upper surface 3 a of the temperature adjusting base portion 3.
- a chamfer 5 b is provided on the lower end 5 a of the bank portion 5.
- the mounting board 11 which consists of ceramics, a corner
- the chamfer dimension of the tip portion 5a of the bank portion 5 is preferably 0.05 mm or more and 0.1 mm or less.
- the chamfering 5b in the illustrated example illustrates a straight chamfering process, a rounded chamfering may be performed.
- the mounting plate 11 can be formed of an arbitrarily selected material, and includes an aluminum oxide-silicon carbide (Al 2 O 3 —SiC) composite sintered body, an aluminum oxide (Al 2 O 3 ) sintered body, and nitriding. From an insulating ceramic sintered body having mechanical strength and durability against a corrosive gas and its plasma, such as an aluminum (AlN) sintered body and an yttrium oxide (Y 2 O 3 ) sintered body It is preferable to become.
- AlN aluminum
- Y 2 O 3 yttrium oxide
- the average particle size of the ceramic particles in the ceramic sintered body can be arbitrarily selected, but is preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less, and even more preferably 2 ⁇ m or less.
- sandblasting is performed.
- the sandblasting process is a process of drilling by spraying an abrasive or the like on the surface of the mounting surface 19. For this reason, a crack may remain inside the protrusion 30. The crack is forcibly advanced and removed in advance by buffing performed after the sandblasting process.
- the protrusion 30 of the present embodiment preferably has no change in the cross-sectional area in the height direction. For this reason, it is preferable that the protrusion 30 is not rounded.
- the thickness of the electrostatic chuck portion 2 can be arbitrarily selected, it is preferably 0.3 mm or more and 5.0 mm or less.
- the thickness of the electrostatic chuck portion 2 is 0.3 mm or more, the mechanical strength of the electrostatic chuck portion 2 can be sufficiently secured.
- the thickness of the electrostatic chuck portion 2 is 5.0 mm or less, the heat capacity of the electrostatic chuck portion 2 does not become too large, and the thermal response of the plate-like sample W to be placed does not deteriorate.
- a heater divided into a plurality of zones may be provided between the electrostatic chucking electrode 13 and the temperature adjusting base 3 to control the temperature distribution in the plane of the plate-like sample W. May be adopted.
- the in-plane temperature of the plate-like sample W is increased due to an increase in the lateral heat conduction of the electrostatic chuck part 2. It may be difficult to maintain a desired temperature pattern.
- the thickness of the mounting plate 11 can be selected arbitrarily, it is preferably 0.3 mm or more and 1.0 mm or less.
- the thickness of the mounting plate 11 is 0.3 mm or more, the insulation of the mounting plate 11 is not broken due to the voltage applied to the electrostatic chucking electrode 13, so that no discharge occurs. Further, if the thickness of the mounting plate 11 is 0.3 mm or more, it is damaged during processing and no crack is generated.
- the plate-like sample W can be sufficiently adsorbed and fixed with a desired strength.
- the first organic insulating layer 14 is a resin layer having insulating properties and voltage resistance.
- the first organic insulating layer 14 is preferably formed by bonding a film-shaped or sheet-shaped forming material.
- the first organic insulating layer 14 is bonded to the lower surface of the mounting plate 11 via an adhesive layer (not shown).
- a black line between the first organic insulating layer 14 and the mounting plate 11 can also be seen as an adhesive layer.
- Withstand voltage dielectric breakdown voltage, (unit: kV) such that the mounting plate 11 and the first organic insulating layer 14 cooperate with the high voltage applied to the electrostatic adsorption electrode 13 to prevent dielectric breakdown. )).
- the thickness of the first organic insulating layer 14 can be arbitrarily selected, but is preferably 0.05 mm or more and 0.2 mm or less.
- the thickness of the first organic insulating layer 14 is such that an adhesive layer that adheres the first organic insulating layer 14 and the mounting plate 11 and an adhesive layer that adheres the first organic insulating layer 14 and the electrode 13 for electrostatic attraction. It is the thickness including.
- the thickness of the first organic insulating layer 14 is 0.05 mm or more, the insulation between the electrostatic adsorption electrode 13 and the mounting plate 11 is broken by the voltage applied to the electrostatic adsorption electrode 13 and discharge occurs. There is nothing.
- the thickness is 0.2 mm or less, the distance between the electrostatic attraction electrode 13 and the plate-like sample W is not too far, and the plate-like sample W can be sufficiently sucked and fixed with a desired strength.
- the dielectric breakdown voltage of the first organic insulating layer 14 is preferably 5 kV or more.
- a material for forming the first organic insulating layer 14 for example, a material that exhibits a dielectric breakdown strength (unit: kV / mm) capable of realizing a desired breakdown voltage in the thickness of the first organic insulating layer 14 described above. Is preferably used. Moreover, what is necessary is just to have heat resistance which does not produce deterioration and deformation
- FIG. Examples of a material for forming the first organic insulating layer 14 include a polyimide resin, a silicone resin, and an epoxy resin.
- these forming materials of the first organic insulating layer 14 have a higher dielectric breakdown strength than ceramics that are the forming material of the mounting plate 11.
- the dielectric breakdown strength of polyimide resin is 300 kV / mm, which is much stronger than the dielectric breakdown strength (10 kV / mm) of Al 2 O 3 —SiC, which is the material for forming the mounting plate 11. . Therefore, when the stacked body of the mounting plate 11 and the first organic insulating layer 14 is used, even when these are the same thickness as compared with the case where only the mounting plate 11 is used, a higher dielectric breakdown voltage is obtained. can do.
- the dielectric breakdown is difficult. That is, the fragile portion of the mounting plate 11 and the fragile portion of the first organic insulating layer 14 are overlapped in a plan view and the fragile portions are overlapped. Locations where defects are likely to occur are formed. Therefore, even if the mounting plate 11 or the first organic insulating layer 14 has a fragile portion, it is difficult to cause a problem.
- the in-plane thickness variation of the first organic insulating layer 14 is preferably within 50 ⁇ m, and more preferably within 10 ⁇ m. If the in-plane thickness variation of the first organic insulating layer 14 is 50 ⁇ m or less, a difference in temperature distribution is unlikely to occur due to the thickness. As a result, it is preferable that the temperature control by adjusting the thickness of the first organic insulating layer 14 is not adversely affected. Further, it is preferable that the adsorption force is less likely to be non-uniform in the surface of the placement surface 19.
- the thermal conductivity of the first organic insulating layer 14 is preferably 0.05 W / mk or more, and more preferably 0.1 W / mk or more.
- the thermal conductivity of the first organic insulating layer 14 is such that the heat transfer coefficient between the mounting plate 11 and the electrostatic adsorption electrode 13 is> 750 W / m 2 K, more preferably> 4000 W / m 2 K. It is good to be controlled.
- the electrostatic chucking electrode 13 is used as an electrostatic chuck electrode for generating a charge and fixing the plate-like sample W with electrostatic chucking force.
- the shape and size of the electrode are appropriately adjusted depending on the application.
- the electrostatic chucking electrode 13 is provided as an electrode having a predetermined pattern in a layer portion where the electrostatic chucking electrode 13 is formed.
- the electrostatic chucking electrode 13 functions even if it is provided as a so-called solid electrode having no pattern.
- the electrode 13 for electrostatic attraction may be formed by any method.
- the electrode 13 for electrostatic attraction is formed by adhering a nonmagnetic metal foil, which is a material for forming the electrode 13 for electrostatic attraction, to the first organic insulating layer 14 or by forming a film by sputtering or vapor deposition. can do.
- it can be formed by applying a composite material of a conductive material, which is a material for forming the electrode 13 for electrostatic attraction, and an organic substance using a coating method such as screen printing.
- the electrostatic chucking electrode 13 may be installed inside the mounting plate 11.
- the electrostatic chucking electrode 13 may be formed of a material selected arbitrarily.
- this electrode includes an aluminum oxide-tantalum carbide (Al 2 O 3 —Ta 4 C 5 ) conductive composite sintered body, an aluminum oxide-tungsten (Al 2 O 3 —W) conductive composite sintered body, and aluminum oxide.
- the electrostatic chucking electrode 13 can also be formed of copper (Cu), aluminum (Al), or carbon (C). These may be used alone or in combination of two or more.
- the thickness of the electrode 13 for electrostatic attraction can be arbitrarily selected and is not particularly limited, but is preferably 0.1 ⁇ m or more and 50 ⁇ m or less. When the thickness is 0.1 ⁇ m or more, sufficient conductivity can be ensured. On the other hand, when the thickness is 50 ⁇ m or less, the junction interface between the electrostatic attraction electrode 13 and the mounting plate 11 is caused by a difference in thermal expansion coefficient between the electrostatic attraction electrode 13 and the mounting plate 11. Hard to crack.
- the size of the electrostatic adsorption electrode 13 can be arbitrarily selected. For example, it may be the same size as the first organic insulating layer 14 in plan view, but may be smaller than the first organic insulating layer 14 in plan view.
- the first organic insulating layer 14 is also present obliquely upward from the end of the electrostatic attraction electrode 13 toward the outside of the apparatus. Become a structure. Therefore, by providing the first organic insulating layer 14 not only vertically above the electrostatic adsorption electrode 13 but also obliquely above the electrostatic adsorption electrode 13, the effect of improving the withstand voltage can be obtained, and the insulation Destruction can be suppressed.
- the power supply terminal 15 is a rod-shaped terminal provided to apply a DC voltage to the electrostatic chucking electrode 13.
- the material for forming the power supply terminal 15 is not particularly limited as long as it is a conductive material having excellent heat resistance, and a metal material or a conductive organic material can be used.
- the electric conductivity of the power supply terminal 15 is preferably 10 4 ⁇ ⁇ cm or less.
- the power supply terminal 15 preferably has a thermal expansion coefficient approximate to that of the electrostatic adsorption electrode 13.
- conductive ceramics constituting the electrode 13 for electrostatic adsorption, or metal materials such as tungsten (W), tantalum (Ta), molybdenum (Mo), niobium (Nb), and Kovar alloy are preferably used.
- the power feeding terminal 15 is insulated from the temperature adjusting base 3 by an insulator 23 having an insulating property.
- the temperature adjusting base 3 is disposed on the side opposite to the mounting plate 11 side of the electrostatic chucking electrode 13 (below the electrostatic chucking electrode 13), and cools the mounting plate 11 to a desired temperature. adjust.
- the temperature adjusting base portion 3 has a thick disk shape.
- the temperature adjusting base portion 3 is formed larger than the electrostatic chuck portion 2 (electrostatic attracting electrode 13 and first organic insulating layer 14) in plan view from above.
- the temperature adjusting base part 3 for example, a water-cooled base in which a flow path (not shown) for circulating water is formed is suitable.
- the temperature adjusting base portion 3 is provided with a groove portion 6 that accommodates a tip portion 5 a located below the bank portion 5 of the mounting plate 11.
- the groove 6 is disposed at a position overlapping the bank 5 in plan view and is wider than the bank 5.
- a gap is provided between the groove portion 6 and the bank portion 5, and a filling portion 8 a that is a part of the adhesive layer 8 is provided in the gap.
- an O-ring may be provided in a portion exposed to the outside of the filling portion 8a as shown in FIG. Since the portion exposed to the outside of the filling portion is covered with O-rings, plasma can be further prevented from entering, the etching rate of the filling portion can be reduced, and the life of the electrostatic chuck device can be extended.
- the material, size, and cross-sectional shape of the O-ring can be arbitrarily selected, and an annular seal member made of an elastic body such as rubber or elastomer resin is preferably used.
- an annular seal member made of an elastic body such as rubber or elastomer resin is preferably used.
- an annular seal member made of an elastic body such as rubber or elastomer resin is preferably used.
- adopted as a sealing member was illustrated, it is not limited to this.
- the cross-sectional shape of the space in which the seal member is accommodated is rectangular, by using a packing with a rectangular cross-section, the contact area is increased and plasma intrusion is further increased. It may be effectively suppressed.
- the depth of the groove 6 can be arbitrarily selected, but is preferably 0.5 mm or more and 12.0 mm or less.
- variety namely, width dimension in alignment with the radial direction of the electrostatic chuck apparatus 1
- the bank part 5 has a portion of 0.3 mm or more and 10.0 mm or less from the tip part 5a located inside the groove part 6, that is, inside the groove part.
- the height of the portion located on the inner side of the groove 6 and the portion located on the outer side of the upper surface 3a of the temperature adjusting base portion 3 coincides with each other.
- one of these parts may be located on the upper side and the other part on the lower side. That is, the upper surface of the temperature adjusting base portion 3 may have a plurality of upper surfaces having different heights.
- the material constituting the temperature adjusting base 3 can be preferably used as long as it is a metal excellent in thermal conductivity, conductivity, and workability, or a composite material containing these metals, and is not particularly limited.
- a metal excellent in thermal conductivity, conductivity, and workability or a composite material containing these metals, and is not particularly limited.
- aluminum (Al), aluminum alloy, copper (Cu), copper alloy, stainless steel (SUS), titanium and the like are preferably used. It is preferable that at least the surface of the temperature adjusting base portion 3 exposed to the plasma is anodized or an insulating film such as alumina is formed.
- the second organic insulating layer 7 can be arbitrarily selected, but is preferably a film- or sheet-like resin having insulating properties and voltage resistance, and is provided between the temperature adjusting base portion 3 and the electrostatic adsorption electrode 13. Is provided.
- the second organic insulating layer 7 is bonded to the upper surface of the temperature adjusting base 3 via an adhesive layer (not shown).
- the black line between the second organic insulating layer 7 and the temperature adjusting base 3 may be viewed as an adhesive layer.
- the electrostatic chuck device 1 of the present embodiment when a high voltage is applied to the electrostatic chucking electrode 13 in order to obtain a strong electrostatic chucking force, the upper side from the electrostatic chucking electrode 13 is the same as the mounting plate 11.
- the first organic insulating layer 14 cooperates to realize a high withstand voltage.
- the second organic insulating layer 7 is provided in the electrostatic chuck device 1 of the present embodiment. By providing the second organic insulating layer 7, the high voltage applied to the electrostatic adsorption electrode 13 is insulated so that no discharge occurs between the electrostatic adsorption electrode 13 and the temperature adjusting base 3. is doing.
- the second organic insulating layer 7 can have the same configuration (formation material and thickness) as the first organic insulating layer 14 described above. However, the first organic insulating layer 14 and the second organic insulating layer 7 may have the same configuration or different configurations.
- the adhesive forming the first organic insulating layer 14 and the second organic insulating layer 7 can be arbitrarily selected.
- a heat-resistant and insulating sheet-like or film-like adhesive resin made of polyimide resin, silicone resin, epoxy resin, or the like can be preferably used, and the thickness is preferably 5 ⁇ m to 100 ⁇ m, more preferably 10 ⁇ m to 50 ⁇ m.
- the thickness variation within the surface of the adhesive is preferably within 10 ⁇ m. If the variation in the in-plane thickness of the adhesive is within 10 ⁇ m, the accuracy of temperature control of the electrostatic chuck portion 2 by the temperature adjusting base portion 3 is within an allowable range within the surface, and the electrostatic chuck portion 2 The in-plane temperature on the mounting surface 19 can be made uniform.
- the adhesive layer 8 is interposed between the lower surface of the electrostatic chuck portion 2 and the upper surface of the temperature adjusting base portion 3.
- the adhesive layer 8 covers the side surfaces of the first organic insulating layer 14, the electrostatic adsorption electrode 13, and the second organic insulating layer 7, and the electrostatic chuck portion 2 and the temperature adjusting base portion 3 are bonded and integrated. It has become.
- the adhesive layer 8 has a thermal stress relaxation effect.
- the adhesive layer 8 is classified into three regions, that is, a filling portion 8a, an interposition portion 8b, and an electrode surrounding portion 8c depending on the position. That is, the adhesive layer 8 has a filling portion 8a, an interposition portion 8b, and an electrode surrounding portion 8c.
- the thickness of each part of the adhesive layer 8 (that is, the filling part 8a, the interposition part 8b, and the electrode surrounding part 8c) is not particularly limited and can be arbitrarily selected, but is preferably 100 ⁇ m or more and 200 ⁇ m or less.
- the filling portion 8 a is filled in the groove portion 6 of the temperature adjusting base portion 3 and fills the gap between the groove portion 6 and the bank portion 5. More specifically, the filling portion 8 a is located on the lower side of the tip portion 5 a of the bank portion 5 and on the radially inner side and the radially outer side with respect to the bank portion 5.
- the filling portion 8a has an exposed portion 8d exposed to the outside outside the bank portion 5.
- the exposed portion 8d of the adhesive layer 8 is etched by being irradiated with plasma in the semiconductor manufacturing process, and the exposed portion 8d moves backward, that is, the exposed portion moves downward.
- the filling portion 8 a has a shape that surrounds the vicinity of the tip portion 5 a of the bank portion 5 and is complicated. For this reason, the etching path can be lengthened, and the time required for the filling portion 8a to completely disappear can be lengthened. That is, for example, the time until the electrode for electrostatic attraction 13 is exposed after the etching progresses can be extended, and the life of the electrostatic chuck device 1 can be extended.
- the filling portion 8a it becomes difficult for plasma to reach the exposed portion 8d as the etching progresses and the exposed portion 8d recedes.
- the exposed portion 8d is formed in the back of the U-shaped path formed by the groove portion 6 and the bank portion 5. It becomes a state. In this state, the plasma moving through the U-shaped path reaches the exposed portion 8d by changing its traveling direction along the inner side of the U-shaped path in the order of lower side, radially inner side, and upper side. Otherwise, the exposed portion 8d cannot be etched. For this reason, the etching rate is significantly reduced, and as a result, the life of the electrostatic chuck device 1 can be extended.
- the filling portion 8a is arranged so as to sandwich the bank portion 5 from inside and outside in the radial direction and to be connected at the lower portion. With this arrangement, the stress caused by thermal expansion or contraction of the filling portion 8a can be canceled out, and the load applied to the bank portion 5 can be reduced.
- the interposition part 8b is located between the electrostatic adsorption electrode 13 and the temperature adjusting base part 3.
- the intervening portion 8b mainly functions to bond and integrate the electrostatic chuck portion 2 and the temperature adjusting base portion 3, relieve thermal stress, and transfer heat. It is desirable that the intervening portion 8b has no or few voids and defects in the inside, the interface with the electrostatic chuck portion 2, and the interface with the temperature adjusting base portion 3. If there are no or few voids or defects, the thermal conductivity is not lowered, and the in-plane temperature distribution of the plate-like sample W is preferably uniform.
- the electrode surrounding portion 8 c is located between the peripheral edge of the electrostatic attraction electrode 13 and the bank portion 5 and surrounds the electrostatic attraction electrode 13.
- the electrode surrounding part 8c is located above the filling part 8a.
- the electrode surrounding portion 8 c surrounds the periphery of the electrostatic attraction electrode 13.
- the adhesive layer 8 can be formed of a material selected arbitrarily.
- the adhesive layer 8 is formed of a cured body obtained by heat-curing a silicone resin composition or an acrylic resin.
- the adhesive layer 8 is preferably formed by filling a fluid resin composition between the electrostatic chuck portion 2 and the temperature adjusting base portion 3 and then heat-curing it.
- the adhesive layer 8 may be composed of a single resin material, but may be composed of two or more types of resin materials that are divided into different portions. In this case, for example, the following configuration is given as a preferred example.
- the adhesive layer 8 is formed from a first resin material and a second resin material that constitute different parts.
- the second resin material is made of a material excellent in plasma resistance as compared with the first resin material.
- the part composed of the second resin material is located closer to the exposed part 8d, which is the part where the adhesive layer 8 is exposed to the outside, than the part composed of the first resin material.
- a configuration in which the filling portion 8a and the electrode surrounding portion 8c of the adhesive layer 8 are made of the second resin material and the interposition portion 8b is made of the first resin material can be mentioned.
- an example in which only a part of the filling portion 8a on the exposed portion 8d side is made of the second resin material can be given.
- the portion made of the second resin material is preferably a region continuous with other regions including at least the exposed portion 8d. Since the adhesive layer 8 includes a portion including the exposed portion 8d made of the second material, the progress of etching by plasma can be delayed, and the life of the electrostatic chuck device 1 can be extended.
- the first resin material preferably constitutes a part including at least the interposition part 8b. In this case, it is preferable that the first resin material has a stronger adhesive force than the second resin material. With this configuration, the electrostatic chuck portion 2 and the temperature adjusting base portion 3 can be firmly bonded by the interposition portion 8b. In this way, the adhesive layer 8 can be made of different materials suitable for each part that preferably requires different functions, thereby contributing to a longer life of the electrostatic chuck device 1.
- the upper surface of the temperature control base 3 and the lower surface of the electrostatic chuck 2 are not necessarily flat.
- a fluid resin composition is filled between the temperature adjusting base portion 3 including the groove 6 and the electrostatic chuck portion 2 and then cured to form the adhesive layer 8, that is, the electrostatic chuck portion. 2 and the resin composition that changes its shape along the shape of the temperature adjusting base 3, the gap between the electrostatic chuck portion 2 and the temperature adjusting base 3 due to the unevenness of the temperature adjusting base 3. Can be suppressed. Accordingly, since there are no or few voids, the heat conduction characteristics of the adhesive layer 8 can be made uniform in the surface, and the heat uniformity of the electrostatic chuck portion 2 can be improved.
- the electrostatic chuck device 1 is formed with a cooling gas introduction hole (through hole) 18 that penetrates the entire device in the thickness direction.
- a cooling gas such as He is supplied from the cooling gas introduction hole 18.
- the cooling gas flows through a gap between the mounting surface 19 of the electrostatic chuck unit 2 and the lower surface of the plate-like sample W.
- the peripheral wall 17 of the mounting plate 11 suppresses leakage of the cooling gas introduced between the mounting surface 19 and the plate-like sample W.
- the mounting plate 11 is also provided with a first through hole 11 h penetrating in the thickness direction of the mounting plate 11.
- the electrostatic adsorption electrode 13 is formed so as to avoid the cooling gas introduction hole 18.
- the first organic insulating layer 14 is provided with a second through hole 14h that penetrates in the thickness direction of the first organic insulating layer 14 and communicates with the first through hole 11h.
- the second through hole 14h is formed larger than the first through hole 11h in plan view.
- the side surface of the electrostatic attraction electrode 13 (indicated by reference numeral 13h in the figure) and the side surface of the second through hole 14h are covered with the adhesive layer 8.
- the second organic insulating layer 7 is provided with a through hole 7 h that penetrates in the thickness direction of the second organic insulating layer 7.
- the electrostatic chuck device 1 may be provided with a plurality of through holes for inserting lift pins that push up the plate-like sample W. Furthermore, a heater that is attached to the lower surface 11 a of the mounting plate 11 and heats the mounting plate 11 may be provided.
- the electrostatic chuck device 1 of the present embodiment has the above configuration.
- the tip portion 5 a of the bank portion 5 of the mounting plate 11 is accommodated in the groove portion 6 of the temperature adjusting base portion 3.
- the filling portion 8 a of the adhesive layer 8 filled in the gap between the mounting plate 11 and the temperature adjusting base portion 3 has a labyrinth structure in which the surface of the bank portion 5 is complicated.
- the filling portion 8a has an exposed portion 8d exposed to the outside on the outside of the bank portion 5.
- the exposed portion 8d of the filling portion 8a is etched by the plasma and gradually recedes. According to the present embodiment, the path from the filling portion 8a to the electrostatic attraction electrode 13 becomes long.
- the labyrinth structure in which the filling portion 8a is complicated makes it possible for the exposed portion 8d to be located in the complicated portion when the exposed portion 8d of the filling portion 8a is retracted. It is difficult to reach 8d, and the etching of the filling portion 8a can be delayed.
- the bank portion 5 preferably has a closed ring shape.
- the groove part 6 is a ring-shaped groove corresponding to the bank part 5.
- FIG. 2 is a partial cross-sectional view of the electrostatic chuck device 101.
- the electrostatic chuck device 101 according to the first modification differs from the electrostatic chuck device 1 according to the above-described embodiment mainly in the configuration of the bank portion and the groove portion.
- symbol may be attached
- the electrostatic chuck device 101 includes an electrostatic chuck portion 102, a temperature adjusting base portion 103, an adhesive layer 108, and a second organic insulating layer 7.
- the electrostatic chuck portion 102 includes a placement plate (ceramic plate) 111 on which the plate-like sample W is placed, an electrostatic adsorption electrode 13, and a first organic insulating layer 14.
- the mounting plate 111 has a bank portion 105 that extends from the periphery of the lower surface 111a toward the temperature adjusting base 103 (that is, the lower side).
- the temperature adjusting base portion 103 is provided with a groove portion 106 that accommodates the tip portion 105 a located below the bank portion 105 of the mounting plate 111.
- the bank portion 105 is formed with a step for gradually reducing the width of the bank portion (the thickness of the bank portion as viewed from the cross section) toward the tip portion 105a on the temperature adjusting base portion 103 side.
- two bank-side step surfaces 105c are provided. In this example, three steps are provided as viewed from the cross section.
- the number of the bank-side step surfaces can be arbitrarily selected, and examples thereof include 1, 2, 3, 4 and the like.
- tip part 105a is not included in the bank part side level
- the two bank-side step surfaces 105c are located on the inner side of the bank 105 with respect to the tip 105a of the bank 105, and give a step-like structure to the bank.
- Each of the two bank-side step portions 105c is a surface facing downward.
- the width of the bank-side step surface, the distance between the bank-side step surfaces, and the number of steps can be arbitrarily selected.
- the groove portion 106 is provided with two groove-side step surfaces 106c corresponding to the two bank-side step surfaces 105c so as to narrow the width of the groove portion toward the bottom side.
- Each groove-side step surface 106c is a surface facing upward.
- the groove-side step surface 106c faces the bank-side step surface 105c in the vertical direction.
- a gap is provided between the groove portion 106 and the bank portion 105.
- a filling portion 108a which is a part of the adhesive layer 108 is provided.
- route which the clearance gap filled with the filling part 108a makes becomes long. Thereby, the time required until the filling part 108a disappears can be lengthened, and the life of the electrostatic chuck device 101 can be extended.
- an outer upper surface 103 b that is a part of the upper surface of the temperature adjusting base portion 103 and is located outside the groove portion 106 is located above the inner upper surface 103 a that is located inside the groove portion 106. .
- route of the filling part 108a can be made longer outside the bank part 105.
- the electrostatic chuck apparatus 101 is not limited to such a form.
- the outer upper surface 103b may be provided at the same height or a lower height. For example, as shown by a two-dot chain line in FIG. 2, an outer upper surface 103c positioned below the inner upper surface 103a may be provided.
- FIG. 3 is a partial cross-sectional view of the electrostatic chuck device 201.
- the electrostatic chuck device 201 of the second modification uses a combination of the bank-side step surface and the groove-side step surface, specifically, the bank-side step surface 205c and the groove portion. Although it has the side step surface 206c, the provided position and direction are different.
- symbol may be attached
- the electrostatic chuck device 201 includes an electrostatic chuck portion 202, a temperature adjusting base portion 203, an adhesive layer 208, and a second organic insulating layer 7.
- the electrostatic chuck unit 202 includes a placement plate (ceramic plate) 211 on which the plate-like sample W is placed, the electrostatic adsorption electrode 13, and the first organic insulating layer 14.
- the mounting plate 211 has a bank portion 205 provided with two bank portion side step surfaces 205c on the tip end portion 205a side.
- the temperature adjusting base portion 203 is formed with a groove portion provided with one groove-side step surface 206c. The number of steps can be arbitrarily selected.
- two bank-side step surfaces 205c are provided.
- the two bank-side step surfaces 205 c are located on the outer side of the bank part 205 with respect to the tip part 205 a of the bank part 205.
- the bank-side step surface 205c is a surface facing downward, and is opposed to the groove-side step surface 206c facing upward.
- an outer upper surface 203b that is a part of the upper surface of the temperature adjusting base portion 203 and is located outside the groove portion 206 is in contrast to the inner upper surface 203a of the base portion 203 located inside the groove portion 206. Located on the lower side. Further, a part of the outer upper surface 203b is opposed to one bank-side step surface 205c facing downward.
- a gap is provided between the groove part 206 and the bank part 205, and a filling part 208a which is a part of the adhesive layer 208 is provided in this gap.
- the filling portion 208a has an exposed portion 208d exposed to the outside from between the outer peripheral surface of the bank portion 205 and the outer upper surface 203b of the temperature adjusting base portion.
- the exposed surface of the exposed portion 208d of the present modification is directed outward in the radial direction of the electrostatic chuck device 201.
- the life of the electrostatic chuck device 201 can be extended by lengthening the path of the gap in which the filling portion 208a is filled.
- FIG. 4 is a partial cross-sectional view of the electrostatic chuck device 301.
- the electrostatic chuck device 301 of the third modified example has a combination of a bank-side step surface and a groove-side step surface, specifically a bank portion. Although it has the side step surface 305c and the groove part side step surface 306c, the structure of the position, shape, etc. is different.
- symbol may be attached
- the electrostatic chuck device 301 includes an electrostatic chuck portion 302, a temperature adjusting base portion 303, an adhesive layer 308, and a second organic insulating layer 7.
- the electrostatic chuck unit 302 includes a placement plate (ceramic plate) 311 on which the plate-like sample W is placed, an electrostatic adsorption electrode 13, and a first organic insulating layer 14.
- the mounting plate 311 has a bank portion 305 provided with a bank portion side step surface 305c on the tip end portion 305a side.
- the temperature adjusting base portion 303 is formed with a groove portion provided with a groove portion side step surface 306c corresponding to, ie, facing, the bank portion side step surface 305c. The number of steps can be arbitrarily selected.
- two bank-side step surfaces 305c are provided.
- the two bank-side step surfaces 305c are located on the inner side and the outer side of the bank 305 with respect to the tip 305a of the bank 305, respectively.
- the bank-side step surface 305c faces downward, and faces the groove-side step surface 306c of the temperature adjusting base 303 in the vertical direction.
- step difference surface 305c differs mutually, it may be the same.
- a gap is provided between the groove portion 306 and the bank portion 305, and a filling portion 308a which is a part of the adhesive layer 308 is provided in the gap.
- the life of the electrostatic chuck device 301 can be extended by lengthening the path of the gap filled with the resin material of the filling portion 308a.
- the outer upper surface 303b that is a part of the upper surface of the temperature adjustment base portion 303 and is located outside the groove portion 306 is the inner upper surface 203a of the temperature adjustment base portion 303 that is located inside the groove portion 306. And have the same height. Further, a protruding portion 303d extending upward from the outer upper surface 303b is provided on the outer peripheral edge of the groove portion 306. By providing the protruding portion 303d, the path of the filling portion 308a outside the bank portion 305 can be made longer, and the life of the electrostatic chuck device 301 can be extended.
- the protrusion may be preferably used in other examples.
- An electrostatic chuck device capable of extending the service life can be provided.
- Interposition part 8c Electrode surrounding part 8d, 208d ... Exposed part 11, 111, 211, 311 ... Mounting plate (ceramic plate) 11a, 111a ... lower surface of mounting plate 11c ... recess 11h ... first through hole of mounting plate 13 ... electrode for electrostatic attraction 13h ... side surface of electrode for electrostatic attraction 14. .... First organic insulating layer 14h ... Second through hole of first organic insulating layer 15 ... Power feeding terminal 17 ... Peripheral wall of mounting surface 18 ... Cooling gas introduction hole 19 ... Placement surface 19a: groove portion of placement surface 23 ... insulator 24 ... O-ring 30 ... projection portion 103b, 203b, 303b ...
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本願は、2015年8月27日に、日本に出願された特願2015-168230号に基づき優先権を主張し、その内容をここに援用する。
すなわち、本発明の第一の態様の静電チャック装置は、以下の装置である。
静電チャック部と、温度調節用ベース部とを備え、
前記静電チャック部は、一方の面が板状試料を載置する載置面であるセラミックプレートと、前記セラミックプレートの前記載置面とは他方の面側に設けられた静電吸着用電極とを有し、
前記温度調節用ベース部は、前記静電吸着用電極の前記セラミックプレート側とは他方の面側に配置され、前記静電チャック部を冷却するベース部であり、
前記セラミックプレートは、前記温度調節用ベース部側に延び、かつ前記静電吸着用電極の周縁を囲む、堤部を有し、
前記温度調節用ベース部は、前記堤部の先端部を収容する溝部を有し、
前記溝部と前記堤部との間には、樹脂材料からなる充填部が充填されている、静電チャック装置。
前記堤部が閉環形状を有し、前記溝部が前記堤部と対応する閉環形状の溝である。
前記充填部の外部に露出する部分が、オーリングで覆われている。
セラミックプレートと、温度調節用ベース部と、を備え、
前記セラミックプレートは、一方の面を、板状試料を載置する載置面を有し、
前記セラミックプレートには、静電吸着用電極が設置されており、
前記温度調節用ベース部には、前記セラミックプレートの前記載置面とは反対側から前記セラミックプレートを冷却するベース部であり、
前記セラミックプレートは、前記温度調節用ベース部側に延び、かつ前記静電吸着用電極の周縁を囲む、堤部を有し、
前記温度調節用ベース部には、前記堤部の先端部を収容する溝部を有し、
前記溝部と前記堤部との間には、樹脂材料からなる充填部が充填された、静電チャック装置。
第二の態様の装置は、第一の態様の装置の好ましい例や好ましい条件を、同様に好ましく含むことができる。
(第1実施形態)
以下、図1を参照しながら、本発明の好ましい例である第1実施形態の静電チャック装置1について説明する。なお、以下の説明で用いる図面は、特徴をわかりやすくするために、便宜上特徴となる部分を拡大して示している場合がある。従って、各構成要素の寸法比率などが実際と同じであるとは限らない。
以下の説明においては、載置面19側を「上」、温度調節用ベース部3側を「下」として示し、各構成の相対位置を表すことがある。また、静電チャック装置1の上下方向に延びる中心軸に対し径方向を基準として「外側(又は径方向外側)」および「内側(又は径方向内側)」として、各部の位置を説明する。
また、静電チャック装置によっては、静電吸着用電極13と温度調節用ベース部3の間に、複数のゾーンに分割されたヒータを設けて、板状試料Wの面内の温度分布を制御する構成を採用することがある。このような静電チャック装置においては、静電チャック部2の厚さが5.0mmを上回ると、静電チャック部2の横方向の熱伝導の増加により、板状試料Wの面内温度を所望の温度パターンに維持することが困難になる場合がある。
なお前記充填部8aの外部に露出する部分には、図5に示すように、オーリングが設けられても良い。前記充填部の外部に露出する部分が、オーリングで覆われることで、さらにプラズマの侵入を防ぎ、充填部のエッチング速度が低下し、静電チャック装置の寿命を長くすることができる。オーリングの素材やサイズや断面形状は任意で選択でき、好ましくはゴム又はエラストマー樹脂などの弾性体からなる、環状のシール部材が使用される。なお、本実施形態においては、シール部材として断面が円形のオーリングを採用した場合を例示したが、これに限定されない。特に、本実施形態に示すようにシール部材が収容される空間の断面形状が矩形状である場合には、断面矩形状のパッキンを用いることで、接触面積を増加させて、プラズマの侵入をより効果的に抑制してもよい。
このような寸法とすることにより、溝部6と堤部5との間に充填された充填部8aの厚さを十分に確保し、後段において説明するように静電チャック装置1の長寿命化を図ることができる。
すなわち、接着層8は、充填部8a、介在部8b、および電極包囲部8cを有する。接着層8の各部(すなわち、充填部8a、介在部8bおよび電極包囲部8c)の厚さは、特に限定されるものではなく任意に選択できるが、100μm以上かつ200μm以下が好ましい。
接着層8は、単一の樹脂材料から構成してもよいが、互いに異なる部位に区分された2種類以上の樹脂材料から構成してもよい。この場合、例えば、以下の構成が、好ましい例として挙げられる。
接着層8を、互いに異なる部位を構成する、第1の樹脂材料と、第2の樹脂材料と、から形成する。第2の樹脂材料は、第1の樹脂材料と比較して耐プラズマ性に優れた材料からなる。第2の樹脂材料から構成される部位は、第1の樹脂材料から構成される部位よりも、接着層8が外部に露出する部分である露出部8dに近い側に位置する。その一例として、接着層8の充填部8aおよび電極包囲部8cが第2の樹脂材料から構成され、介在部8bが第1の樹脂材料から構成される構成が挙げられる。他の例として、接着層8の充填部8aのみが第2の樹脂材料から構成され、介在部8bおよび電極包囲部8cが第2の樹脂材料から構成される構成が挙げられる。さらに、他の例として、充填部8aの露出部8d側の一部のみが第2の樹脂材料から構成される例が挙げられる。すなわち、第2の樹脂材料からなる部位は、少なくとも露出部8dを含む、他の領域と連続した領域であることが好ましい。接着層8は、露出部8dを含む部位を第2の材料から構成することで、プラズマによるエッチングの進行を遅延させることができ、静電チャック装置1の寿命を長くすることができる。
第1の樹脂材料は、少なくとも介在部8bを含む部位を構成することが好ましい。この場合、第1の樹脂材料は、第2の樹脂材料と比較して、接着力が強い材料とすることが好ましい。この構成により、介在部8bにより静電チャック部2と温度調節用ベース部3とを強固に接着できる。
このように、接着層8を、それぞれ異なる機能を好ましく必要とする各部位に合わせた異なる材料から構成させることで、静電チャック装置1の長寿命化に寄与できる。
本実施形態の静電チャック装置1は、以上のような構成となっている。
(変形例1)
次に本発明の好ましい例である、変形例1の静電チャック装置101について説明する。
図2は、静電チャック装置101の部分断面図である。変形例1の静電チャック装置101は、上述の実施形態の静電チャック装置1と比較して、主に堤部および溝部の構成が異なる。なお、上述の実施形態と同一態様の構成要素については、同一符号を付し、その説明を省略することがある。
次に本発明の好ましい例である、変形例2の静電チャック装置201について説明する。
図3は、静電チャック装置201の部分断面図である。変形例2の静電チャック装置201は、変形例1の静電チャック装置101と同様に、堤部側段差面および溝部側段差面の組み合わせを、具体的には堤部側段差面205cおよび溝部側段差面206cを有しているが、設けられた位置と向きが異なる。なお、上述の実施形態および変形例と同一態様の構成要素については、同一符号を付し、その説明を省略することがある。
次に本発明の好ましい例である、変形例3の静電チャック装置301について説明する。
図4は、静電チャック装置301の部分断面図である。変形例3の静電チャック装置301は、変形例1および変形例2の静電チャック装置101、201と同様に、堤部側段差面および溝部側段差面の組み合わせを、具体的には堤部側段差面305cおよび溝部側段差面306cを、有するが、その位置や形状等の構成が異なる。なお、上述の実施形態および変形例と同一態様の構成要素については、同一符号を付し、その説明を省略することがある。
2、102、202、302・・・静電チャック部
3、103、203、303・・・温度調節用ベース部
3a、103a、203a・・・温度調節用ベース部の上面
5、105、205、305・・・堤部
5a、105a、205a・・・堤部の先端部
5b、5d・・・面取り
6、106、206、306・・・溝部
7・・・第2有機絶縁層
7h・・・第2有機絶縁層の貫通孔
8、108、208、308・・・接着層
8a、108a、208a、308a・・・充填部
8b・・・介在部
8c・・・電極包囲部
8d、208d・・・露出部
11、111、211、311・・・載置板(セラミックプレート)
11a、111a・・・載置板の下面
11c・・・凹部
11h・・・載置板の第1貫通孔
13・・・静電吸着用電極
13h・・・静電吸着用電極の側面
14・・・第1有機絶縁層
14h・・・第1有機絶縁層の第2貫通孔 15・・・給電用端子
17・・・載置面の周縁壁
18・・・冷却ガス導入孔
19・・・載置面
19a・・・載置面の溝部
23・・・碍子
24・・・オーリング
30・・・載置面の突起部
103b、203b、303b・・・温度調節用ベース部の外側上面
103c・・・温度調節用ベース部の外側上面
105c、205c、305c・・・堤部側段差面
106c、206c、306c・・・溝部側段差面
303d・・・外側上面の突出部
W・・・板状試料
Claims (10)
- 静電チャック部と、温度調節用ベース部とを備え、
前記静電チャック部は、一方の面が板状試料を載置する載置面であるセラミックプレートと、前記セラミックプレートの前記載置面とは他方の面側に設けられた静電吸着用電極とを有し、
前記温度調節用ベース部は、前記静電吸着用電極の前記セラミックプレート側とは他方の面側に配置され、前記静電チャック部を冷却するベース部であり、
前記セラミックプレートは、前記温度調節用ベース部側に延び、かつ前記静電吸着用電極の周縁を囲む、堤部を有し、
前記温度調節用ベース部は、前記堤部の先端部を収容する溝部を有し、
前記溝部と前記堤部との間には、樹脂材料からなる充填部が充填された、
静電チャック装置。 - 前記堤部が閉環形状を有し、前記溝部が前記堤部と対応する閉環形状の溝である、請求項1に記載の静電チャック装置。
- 前記堤部には、前記温度調節用ベース部側の先端部に向うにつれ堤部の幅が段階的に薄くなる、堤部側段差が設けられ、
前記溝部には、前記堤部側段差に対応して底側に向かって幅が狭くなる溝部側段差が設けられている、請求項1に記載の静電チャック装置。 - 前記堤部の前記温度調節用ベース部側の先端部に面取りが施された、請求項1に記載の静電チャック装置。
- 前記充填部の外部に露出する部分が、オーリングで覆われている、請求項1に記載の静電チャック装置。
- 前記静電チャック部と前記温度調節用ベース部とを接着する接着層を備え、
前記接着層は、
前記充填部と、
前記静電吸着用電極と前記温度調節用ベース部との間に位置する介在部と、
を有する、請求項1に記載の静電チャック装置。 - 前記接着層が、
第1の樹脂材料からなる部位と、
前記第1の樹脂材料より耐プラズマ性に優れた第2の樹脂材料とからなる部位と、に区分され、
前記接着層の外部に露出する部分が前記第2の樹脂材料からなる、
請求項6に記載の静電チャック装置。 - 前記セラミックプレートと前記静電吸着用電極との間に設けられた、第1有機絶縁層を有する、請求項1に記載の静電チャック装置。
- 前記温度調節用ベース部と前記静電吸着用電極との間に設けられた、第2有機絶縁層を有する、請求項1に記載の静電チャック装置。
- セラミックプレートと、温度調節用ベース部と、を備え、
前記セラミックプレートは、一方の面を、板状試料を載置する載置面を有し、
前記セラミックプレートには、静電吸着用電極が設置されており、
前記温度調節用ベース部は、前記セラミックプレートの前記載置面とは反対側から前記セラミックプレートを冷却する、ベース部であり、
前記セラミックプレートは、前記温度調節用ベース部側に延び、かつ前記静電吸着用電極の周縁を囲む、堤部を有し、
前記温度調節用ベース部は、前記堤部の先端部を収容する溝部を有し、
前記溝部と前記堤部との間には、樹脂材料からなる充填部が充填された、
静電チャック装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016556915A JP6123952B1 (ja) | 2015-08-27 | 2016-08-09 | 静電チャック装置 |
US15/752,863 US10256131B2 (en) | 2015-08-27 | 2016-08-09 | Electrostatic chuck device |
KR1020187001519A KR102540912B1 (ko) | 2015-08-27 | 2016-08-09 | 정전 척 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015168230 | 2015-08-27 | ||
JP2015-168230 | 2015-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017033738A1 true WO2017033738A1 (ja) | 2017-03-02 |
Family
ID=58101214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/073428 WO2017033738A1 (ja) | 2015-08-27 | 2016-08-09 | 静電チャック装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10256131B2 (ja) |
JP (1) | JP6123952B1 (ja) |
KR (1) | KR102540912B1 (ja) |
WO (1) | WO2017033738A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6435481B1 (ja) * | 2017-09-04 | 2018-12-12 | 株式会社プロセス・ラボ・ミクロン | ワーク吸着冶具とワーク吸着装置 |
WO2020171179A1 (ja) * | 2019-02-21 | 2020-08-27 | 京セラ株式会社 | 試料保持具 |
JPWO2019065710A1 (ja) * | 2017-09-29 | 2020-11-12 | 住友大阪セメント株式会社 | 静電チャック装置 |
Families Citing this family (222)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
SG10201810390TA (en) | 2014-05-21 | 2018-12-28 | Applied Materials Inc | Thermal processing susceptor |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10622239B2 (en) * | 2015-03-31 | 2020-04-14 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
TWI791689B (zh) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | 包括潔淨迷你環境之裝置 |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) * | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
JP7100716B2 (ja) * | 2018-12-27 | 2022-07-13 | 株式会社巴川製紙所 | 静電チャック装置 |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102638425B1 (ko) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
WO2020170514A1 (ja) * | 2019-02-20 | 2020-08-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (ja) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | トポロジー制御されたアモルファスカーボンポリマー膜の形成方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
TW202115273A (zh) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
CN113035683B (zh) * | 2019-12-25 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种下电极组件、等离子体处理器 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
DE102020204379B3 (de) | 2020-04-03 | 2021-05-20 | Bruker Switzerland Ag | Magnetisch kompensierter NMR-Rotor und Verfahren zur Auslegung und Herstellung |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
CN115461856A (zh) * | 2020-04-29 | 2022-12-09 | 应用材料公司 | 用于均匀性改善的加热器盖板 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
CN112530854B (zh) * | 2021-02-18 | 2022-01-04 | 北京中硅泰克精密技术有限公司 | 半导体承载装置及半导体设备 |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316299A (ja) * | 1995-03-14 | 1996-11-29 | Souzou Kagaku:Kk | 静電チャック |
JP2002064134A (ja) * | 2000-08-16 | 2002-02-28 | Creative Technology:Kk | 静電チャック及びその製造方法 |
JP2009503816A (ja) * | 2005-07-19 | 2009-01-29 | ラム リサーチ コーポレーション | プラズマ処理システムでの使用に適合された基板支持部の結合層を保護する方法 |
JP2015515760A (ja) * | 2012-04-26 | 2015-05-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Escの接着剤の浸食を防止するための方法及び装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09213773A (ja) * | 1996-01-30 | 1997-08-15 | Kyocera Corp | ウェハ保持部材及び耐プラズマ用部材 |
JP2001308165A (ja) | 2000-04-19 | 2001-11-02 | Sumitomo Osaka Cement Co Ltd | サセプタ及びその製造方法 |
JP4129152B2 (ja) * | 2002-08-06 | 2008-08-06 | 東京エレクトロン株式会社 | 基板載置部材およびそれを用いた基板処理装置 |
JP4034145B2 (ja) | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | サセプタ装置 |
JP4398306B2 (ja) * | 2004-06-03 | 2010-01-13 | 日本特殊陶業株式会社 | 静電チャック及びセラミック製の静電チャックの製造方法 |
JP2007110023A (ja) | 2005-10-17 | 2007-04-26 | Shinko Electric Ind Co Ltd | 基板保持装置 |
JP5245268B2 (ja) * | 2006-06-16 | 2013-07-24 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
JP5025576B2 (ja) * | 2008-06-13 | 2012-09-12 | 新光電気工業株式会社 | 静電チャック及び基板温調固定装置 |
WO2010019430A2 (en) * | 2008-08-12 | 2010-02-18 | Applied Materials, Inc. | Electrostatic chuck assembly |
KR20110055837A (ko) * | 2009-11-20 | 2011-05-26 | 삼성전자주식회사 | 정전 척 |
US9948214B2 (en) | 2012-04-26 | 2018-04-17 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
JP6162428B2 (ja) * | 2013-02-27 | 2017-07-12 | 日本特殊陶業株式会社 | 支持装置 |
-
2016
- 2016-08-09 KR KR1020187001519A patent/KR102540912B1/ko active IP Right Grant
- 2016-08-09 WO PCT/JP2016/073428 patent/WO2017033738A1/ja active Application Filing
- 2016-08-09 JP JP2016556915A patent/JP6123952B1/ja active Active
- 2016-08-09 US US15/752,863 patent/US10256131B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316299A (ja) * | 1995-03-14 | 1996-11-29 | Souzou Kagaku:Kk | 静電チャック |
JP2002064134A (ja) * | 2000-08-16 | 2002-02-28 | Creative Technology:Kk | 静電チャック及びその製造方法 |
JP2009503816A (ja) * | 2005-07-19 | 2009-01-29 | ラム リサーチ コーポレーション | プラズマ処理システムでの使用に適合された基板支持部の結合層を保護する方法 |
JP2015515760A (ja) * | 2012-04-26 | 2015-05-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Escの接着剤の浸食を防止するための方法及び装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6435481B1 (ja) * | 2017-09-04 | 2018-12-12 | 株式会社プロセス・ラボ・ミクロン | ワーク吸着冶具とワーク吸着装置 |
JP2019047643A (ja) * | 2017-09-04 | 2019-03-22 | 株式会社プロセス・ラボ・ミクロン | ワーク吸着冶具とワーク吸着装置 |
JPWO2019065710A1 (ja) * | 2017-09-29 | 2020-11-12 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2020171179A1 (ja) * | 2019-02-21 | 2020-08-27 | 京セラ株式会社 | 試料保持具 |
JPWO2020171179A1 (ja) * | 2019-02-21 | 2021-12-09 | 京セラ株式会社 | 試料保持具 |
JP7116241B2 (ja) | 2019-02-21 | 2022-08-09 | 京セラ株式会社 | 試料保持具 |
Also Published As
Publication number | Publication date |
---|---|
KR102540912B1 (ko) | 2023-06-08 |
US20180254211A1 (en) | 2018-09-06 |
KR20180042223A (ko) | 2018-04-25 |
US10256131B2 (en) | 2019-04-09 |
JPWO2017033738A1 (ja) | 2017-08-24 |
JP6123952B1 (ja) | 2017-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6123952B1 (ja) | 静電チャック装置 | |
WO2017069238A1 (ja) | 静電チャック装置 | |
US10153192B2 (en) | Electrostatic chuck device | |
JP6686879B2 (ja) | 静電チャック装置 | |
US9466518B2 (en) | Electrostatic chuck device | |
TWI690014B (zh) | 靜電吸盤裝置及其製造方法 | |
JP6380177B2 (ja) | 静電チャック装置 | |
KR20180103912A (ko) | 정전 척 장치 | |
JP6172301B2 (ja) | 静電チャック装置 | |
JP6604239B2 (ja) | 静電チャック装置 | |
WO2019131115A1 (ja) | 静電チャック装置 | |
JP2023010808A (ja) | 静電チャック装置 | |
KR102636538B1 (ko) | 정전 척 장치 | |
KR20200089584A (ko) | 정전 척 및 정전 척 장치 | |
JP7052847B1 (ja) | 静電チャック装置の補修方法 | |
KR102611059B1 (ko) | 시료 유지구 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2016556915 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16839085 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20187001519 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15752863 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16839085 Country of ref document: EP Kind code of ref document: A1 |