JP2019212910A - 基板支持台座 - Google Patents
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 70
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
Abstract
Description
本発明の実施形態は、概して、基板処理チャンバ内で使用するための、保護された接着層を有する基板支持台座に関する。
基板支持台座が広く使用されて、処理の間に半導体処理システム内で基板を支持している。特定の種類の基板支持台座は、冷却ベースに取り付けられたセラミック静電チャックを備える。静電チャックは一般に、処理の間に基板を静止位置に保持する。静電チャックは、セラミック体内に1つ以上の埋め込み電極を含む。電極とセラミック体上に配置された基板との間に電位が印加されると、静電引力が発生して、この静電引力が基板をセラミック体の支持面に対して保持する。発生した力は、基板と電極との間の電位差による容量効果であるか、又は比較的低い抵抗率を有する半導体材料からなるセラミック体の場合にはこの低い抵抗率のためにセラミック体の中で基板に近い表面への電荷移動が可能であるので、ジョンセン・ラーベック効果である。容量性引力及びジョンセン・ラーベック引力を利用する静電チャックは、いくつかの供給元から市販されている。
Claims (15)
- 接着層によって冷却ベースに接着された静電チャック本体と、
多孔質プラグと、
静電チャック本体の上面と冷却ベースの底面との間に形成されたガス流路であって、
ガス流路は、接着層の穴及び多孔質プラグを通過し、
ガス流路は、接着層の穴の内縁から物理的に遮蔽された押除容積を有しているガス流路とを備える基板支持台座。 - 多孔質プラグは、静電チャック本体の底面に形成されたチャック空洞部内に少なくとも部分的に配置され、
多孔質プラグは、冷却ベースの上面に形成されたベース空洞部内に少なくとも部分的に配置され、
多孔質プラグは、接着剤層によって又は圧入によって静電チャック本体に連結されている、請求項1に記載の基板支持台座。 - 多孔質プラグの周囲に配置されたスリーブであって、
シールは静電チャック本体と冷却ベースとの間に形成された間隙の全域にわたって延在し、
接着層に形成された穴の内縁は、スリーブによってガス流路の押除容積から物理的に遮蔽されているスリーブをさらに備える、請求項1に記載の基板支持台座であって、
死容積がスリーブと穴の内縁との間に画定されている基板支持台座。 - 静電チャック本体は、静電チャック本体の底面から延びるリングをさらに備え、
ガス流路はリングを貫通して延在している、請求項1に記載の基板支持台座。 - リングは、静電チャック本体と冷却ベースとの間に形成された間隙の全域にわたって延在し、
接着層に形成された穴の内縁は、リングによってガス流路の押除容積から物理的に遮蔽されている、請求項4に記載の基板支持台座。 - リングとリング内に存在する多孔質プラグとの間に配置されたスリーブをさらに備える、請求項4に記載の基板支持台座。
- スリーブはリングから冷却ベースまで延在し、
接着層に形成された穴の内縁は、リング及びスリーブによってガス流路の押除容積から物理的に遮蔽されている、請求項6に記載の基板支持台座。 - 静電チャック本体の底面及び冷却ベースの上面のうちの少なくとも一方に連結されたリングをさらに備える、請求項1に記載の基板支持台座であって、
ガス流路はリングを通過し、
リングは静電チャック本体と冷却ベースとの間に形成された間隙の全域にわたって延在し、
接着層に形成された穴の内縁は、リングによってガス流路の押除容積から物理的に遮蔽されている基板支持台座。 - 冷却ベースは、冷却ベースの上面から延びるリングをさらに備え、
ガス流路はリングを貫通して延在している、請求項1に記載の基板支持台座。 - リングは、静電チャック本体と冷却ベースとの間に形成された間隙の全域にわたって延在し、
接着層に形成された穴の内縁は、リングによってガス流路の押除容積から物理的に遮蔽されている、請求項9に記載の基板支持台座。 - リングとリング内に存在する多孔質プラグとの間に配置されたスリーブをさらに備える、請求項9に記載の基板支持台座であって、
スリーブはリングから静電チャック本体まで延在し、
接着層に形成された穴の内縁は、リング及びスリーブによってガス流路の押除容積から物理的に遮蔽されている基板支持台座。 - 静電チャック本体に固定されたスリーブをさらに備える、請求項1に記載の基板支持台座であって、スリーブは、多孔質プラグから延びる突起を拘束している基板支持台座。
- 接着層によって冷却ベースに接着された静電チャック本体であって、
接着層は、静電チャック本体と冷却ベースとの間の間隙を画定する厚さを有し、
静電チャック本体の底面に空洞部が形成されている静電チャック本体と、
多孔質プラグと、
多孔質プラグの周囲に配置されたスリーブと、
静電チャック本体の上面と冷却ベースの底面との間に形成されたガス流路であって、
ガス流路は、接着層の穴及び多孔質プラグを通過し、
ガス流路は、
少なくとも1つのスリーブによって接着層の穴の内縁から物理的に遮蔽された押除容積と、
静電チャック本体及び冷却ベースのうちの一方から延びるリングと、
リングとを有しているガス流路とを備える基板支持台座であって、
多孔質プラグは、上部直径を有する上部部分と底部直径を有する底部部分とによって画定され、
多孔質プラグの上部部分はチャック空洞部内に延在し、底部部分は冷却ベースの上部に形成されたベース空洞部内に延在し、
上部直径は底部直径よりも大きい基板支持台座。 - 上部直径と底部直径との間の直径の差が多孔質プラグの張出部を形成し、
張出部は、多孔質プラグの周囲に同心円状に配置されたスリーブに連結され、
接着剤層がチャック空洞部の側壁とスリーブとの間に形成されて、多孔質プラグを静電チャック本体に連結している、請求項13に記載の基板支持台座。 - 接着層によって冷却ベースに接着された静電チャック本体であって、
接着層は、静電チャック本体と冷却ベースとの間の間隙を画定する厚さを有し、
静電チャック本体は、
静電チャック本体の底面に形成された第1チャック空洞部と、
第1チャック空洞部を通って形成された第2チャック空洞部とを備えている静電チャック本体と、
多孔質プラグであって、
多孔質プラグは、第2チャック空洞部の高さ以下のプラグ高さを有し、
多孔質プラグは第1チャック空洞部内に延在せず、
多孔質プラグは、接着剤層又は圧入のうちの少なくとも一方によって静電チャック本体に連結されている多孔質プラグと、
多孔質プラグの周囲に配置されたスリーブであって、
冷却ベース内に延在しないスリーブと、
静電チャック本体の上面と冷却ベースの底面との間に形成されたガス流路であって、
ガス流路は、接着層の穴及び多孔質プラグを通過し、
ガス流路は、
少なくとも1つのスリーブによって接着層の穴の内縁から物理的に遮蔽された押除容積と、
静電チャック本体及び冷却ベースのうちの一方から延びるリング、又は
リングとを有しているガス流路とを備える基板支持台座。
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US11456161B2 (en) | 2022-09-27 |
TWI818997B (zh) | 2023-10-21 |
TW202013586A (zh) | 2020-04-01 |
CN110556316A (zh) | 2019-12-10 |
KR20190138285A (ko) | 2019-12-12 |
US20230019718A1 (en) | 2023-01-19 |
TW202401653A (zh) | 2024-01-01 |
US20190371578A1 (en) | 2019-12-05 |
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