CN1053233C - 铜及铜合金的表面处理剂 - Google Patents

铜及铜合金的表面处理剂 Download PDF

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CN1053233C
CN1053233C CN94104029A CN94104029A CN1053233C CN 1053233 C CN1053233 C CN 1053233C CN 94104029 A CN94104029 A CN 94104029A CN 94104029 A CN94104029 A CN 94104029A CN 1053233 C CN1053233 C CN 1053233C
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秋山大作
牧善朗
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MIKATSU CO Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3618Carboxylic acids or salts
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/383Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/121Metallo-organic compounds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/122Organic non-polymeric compounds, e.g. oil, wax, thiol
    • H05K2203/124Heterocyclic organic compounds, e.g. azole, furan
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/064Photoresists
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

本发明提供了一种可用于铜及铜合金的除锈、表面粗糙化等处理时用的表面处理剂,该处理剂可形成焊接性良好的表面,不会腐蚀处理后的铜,且其操作环境良好。本发明的表面处理剂由配合唑类的二价铜配合物作为氧化剂,沸点或分解温度在230℃以下的有机酸作溶解氧化铜的酸,难挥发性配位剂及比上述唑类络合能力弱的配位剂作为配位剂配制而成。

Description

铜及铜合金的表面处理剂
本发明涉及一种可用于铜及铜合金的除锈、表面粗糙化处理等的表面处理剂。
现时,在制造印刷电路板时,对铜表面进行通常称作微蚀刻的化学研磨的处理,其目的是提高防蚀涂层,或防焊涂层的粘结性,或者是提高电子零件安装时对焊锡结合性。在该微蚀刻中,通常使用以硫酸和过氧化氢为主成分的水溶液或以过硫酸盐为主成分的水溶液。
然而,在使用以硫酸及过氧化氢,或过硫酸盐为主成分的蚀刻剂进行处理时,若其后的水洗不充分,蚀刻剂会残留于印刷电路基板上,使电路被腐蚀;最严重时,会导致电路断线。另外,由于这些蚀刻剂在使用时会产生烟雾,从操作环境的观点来说,上述蚀刻剂也不理想。
本发明的目的在于提供一种表面处理剂,即使处理后的水洗不充分,也不会腐蚀电路,消除了电路断线之忧;而且可抑止烟雾,或有害气体的发生,改善操作环境。
因此,本发明者为达到上述目的而反复进行了刻意研究,研制出一种表面处理剂,该表面处理剂系由含有唑(azole)类的二价铜配位化合物,沸点或分解点在230C之下的有机酸及难挥发性配位剂,并添加其络合能力弱于上述唑类配位剂的水溶液所组成,从而达到了本发明。
在本发明所用的唑类铜配位化合物之作用为氧化金属铜等的氧化剂。在本发明中,在具氧化作用的各种二价铜配位化合物中,唑类二价铜配位化合物作为表面处理剂,其蚀刻率适中。上述之唑类配合剂可包括二唑、三唑、四唑及其衍生物,但其中,咪唑、2-甲基咪唑、2-乙基-4甲基咪唑、2-苯基咪唑、2-十一烷基咪唑、苯并咪唑等比较便宜。
上述唑类的二价铜配位化合物的含量可根据其对氧化力的需要而适当设定,通常为1-5%((重量%)以下同)。上述之含量过少,则氧化力不足,无法得到充分的蚀刻效果。
上述唑类的二价铜配位化合物既可以铜配位化合物的形式添加,也可分别添加二价铜离子源和唑类配位剂,使在液体中形成为铜配位化合物。作为上述二价铜离子源,有氢氧化铜或下述的有机酸的铜盐之类的物质。
本发明中所用的沸点或分解温度在230℃以下的有机酸,是为了溶解唑类二价铜配位化合物氧化的铜,且在所制造的印刷电路板上安装电子零件时,在焊接过程中(通常为200°-260℃)蒸发或分解而被除去,对产品之可靠性不产生不利影响。上述有机酸的具体例子有:甲酸、乙酸、丙酸、丁酸、戊酸、己酸等饱和脂肪酸;丙烯酸、巴豆酸(丁烯酸)、异丁烯酸等不饱和脂肪酸;草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸等脂肪族饱和二羧酸;马来酸等脂肪族不饱和二羧酸;苯甲酸、邻苯二甲酸等芳香族羧酸等。
上述有机酸的含量宜在5-30%之间。如其含量过少,则不能充分溶解氧化铜,使铜表面状态恶化;而它们的含量过多时,则铜的溶解稳定性降低。
本发明所用难挥发性配位剂,其目的在于保持被有机酸溶解的铜的稳定性,且由于其难挥发性,便不会恶化操作环境。上述难挥发性配位剂的具体例子有:丁胺、戊胺、己胺、二丙胺、二异丙胺、二丁胺、三乙胺、三丙胺等脂肪胺类;苯胺等芳香胺类;乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺等醇胺类;甘胺酸、丙胺酸、精氨酸、天冬氨酸等氨基酸类等。其中,在以本发明的表面处理剂处理的印刷电路板上焊接时,醇胺类可提高焊接效果,因此可优先使用。
上述难挥发性配位剂的含量,为保持溶解铜的稳定,宜在1%以上,通常在20%以下。又,在表面处理的实施中,难挥发性配位剂会随铜等的溶解而消耗,所以,为使表面处理顺利地进行,难挥发性配位剂的含量要满足上述规定要求。
考虑到铜的溶解稳定性,难挥发性配位剂应比唑类更强些,然而,仅用这样的配位剂,则会使唑配合物的氧化能力下降,无法得到充分的蚀刻率,因此,在本发明中,还要添加配位能力较唑类弱的配位剂以调节至所希望的蚀刻率。作为配位能力较唑类弱的配位剂,可依所使用的唑的种类而定,例如,氨、吡啶、乙酰组胺、黄苷、2-(2-噻嗯基)吡啶等。
配位力较上述唑类弱的配位剂的添加量无法依其它成分的种类、成本等作硬性的规定,通常其在表面处理剂中的含量为0.5-10%。
由如上所述成分所形成的本发明表面处理剂,可藉氢氧化钠、氨及上述有机酸的再添加,使其pH调节至6-8(在40℃时测定)后使用。又,在再添加氨或上述有机酸时,添加量应在上述范围内。如上述pH不到6,则无法进行氧化,蚀刻率降低;而当pH超过8时,则氧化速度过快,其表面状态变差。
本以明的表面处理剂的使用方法,有喷雾于被处理金属的喷洒法;将被处理金属浸渍于表面处理剂中的浸渍方法等。在采用浸渍方法时,为使由铜或铜合金的蚀刻将生成于处理剂中的一价铜离子氧化成二价铜离子,可以鼓泡形式吹入空气。
本发明的表面处理剂可厂泛使用于铜或铜合金的化学研磨,由于处理后铜等的表面形成了适度的凹凸状,与各种保护涂层具良好的粘合性,而且,焊接性能也有提高,所以在印刷电路板的制造中特别适用。
实施例实施例1-4
混合表1所示的成份,调整pH值成6,5而制得本发明的表面处理剂。
其次,准备两面镀铜之长150mm,宽70mm,厚1.6mm,具有1000个直径0.3mm的通孔的印刷电路板用镀膜层合板(FR-4)。使该基板之一面涂覆以防焊涂层后,在25℃浸渍于上述表面处理剂1分钟后,取出。此时的臭味、未被基板的防焊涂层所覆盖的面的表面状态及蚀刻量示于表1。其次,使该基板在不经水洗直接在230℃加热3分钟,再放置于80℃,90%RH之恒温恒湿器中30天,由通孔内电阻的测定而测得通孔断线的发生率。其结果示于表1。比较例1-3
与实施例1相同,制备表2所示的表面处理剂,加以评价。其结果示于表2。
使用本发明之表面处理剂,即使在处理后水洗不充分,也不会腐蚀线路。而且,也不易发出烟雾等有害气体,从而能改善作业环境,并能形成焊接性能良好的表面。
表1
组成及配合量 断线发生率(%) 完成状态 气  味 蚀刻量(μm)
实施例1  2-甲基咪唑二价铜配合物    3%醋  酸                    5%苯  胺                     3%吡  啶                     1%离子交换水                 88% 0 产生适于层合及焊接之凹凸表面 仅有些微醋酸气味,并不构成问题 0.28
实施例2 2-甲基咪唑二价铜配合物     3%醋  酸                     5%苯  胺                     3%吡  啶                     1%离子交换水                 88% 0 产生适于层合及焊接之凹凸表面 无气味 0.42
实施例3 2-甲基咪唑二价铜配合物     3%醋  酸                     5%二乙醇胺                   3%吡  啶                     1%离子交换水                 88% 0 产生适于层合及焊接之凹凸表面 仅有些微醋酸气味,并不构成问题 0.33
实施例4 基咪唑二价铜配合物         3%醋  酸                     5%苯  胺                     3%吡  啶                     1%离子交换水                 88% 0 产生适于层合及焊接之凹凸表面 仅有些微醋酸气味,并不构成问题 0.56
注:断线发生率系将通孔内电阻在1Ω以上时作为断线,求得其比率。
表2
组成及配合量 断线发生率(%) 完成状态 气  味 蚀刻量(μm)
比较例1 硫  酸        10%过氧化氢      5%离子交换水    85% 32.4 产生适合于层合及焊接之凹凸表面 刺鼻臭味 0.82
比较例2 过硫酸钠      10%硫  酸        1%离子交换水    89% 21.4 产生适合于层合及焊接之凹凸表面 刺鼻臭味 0.63
比较例3   硫  酸        10%离子交换水    90% 29.7 仅有除锈效果,表面平滑如故。 无气味 0.011
注:断线发生率系将通孔内电阻在1Ω以上时作为断线,求得其比率。

Claims (3)

1.一种铜及铜合金表面的处理剂,其特征在于,所述表面处理剂由含有:选自为咪唑、2-甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-十一烷基咪唑、及苯并咪唑的二唑、三唑、四唑及其衍生物的唑类的二价铜配位化合物1~5%(重量),其沸点或分解温度在230℃以下的有机酸5~30%(重量),选自丁胺、戊胺、己胺、二丙胺、二异丙胺、二丁胺、三乙胺、三丙胺、苯胺、乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、甘氨酸、丙氨酸、精氨酸及天冬氨酸的难挥发性配位剂1~20%(重量)及再添加有其配位能力较所述唑类弱的配位剂0.5~10%(重量)的水溶液。
2.如权利要求1所述的表面处理剂,其特征在于,所述其沸点或其分解温度在230℃以下的有机酸为甲酸、乙酸、丙酸、丁酸、戊酸、己酸、丙烯酸、丁烯酸、异丁烯酸、草酸、琥珀酸、戊二酸、己二酸、庚二酸、马来酸、苯甲酸及邻苯二甲酸。
3.如权利要求1所述的表面处理剂,其特征在于,所述配位能力较所述唑类弱的配位剂为氨、吡啶、乙酰组胺、黄苷、2-(2-噻吩基)吡啶。
CN94104029A 1993-04-05 1994-04-04 铜及铜合金的表面处理剂 Expired - Fee Related CN1053233C (zh)

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CN1120077A (zh) 1996-04-10
EP0620293B1 (en) 1997-01-15
US5439783A (en) 1995-08-08
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DE69401453D1 (de) 1997-02-27
TW256856B (zh) 1995-09-11

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