CN105322008B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN105322008B CN105322008B CN201510446730.9A CN201510446730A CN105322008B CN 105322008 B CN105322008 B CN 105322008B CN 201510446730 A CN201510446730 A CN 201510446730A CN 105322008 B CN105322008 B CN 105322008B
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- semiconductor layer
- nitride semiconductor
- nitride
- layer
- anode electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 456
- 238000004519 manufacturing process Methods 0.000 title abstract description 21
- 150000004767 nitrides Chemical class 0.000 claims abstract description 421
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000010276 construction Methods 0.000 claims abstract description 9
- 230000012010 growth Effects 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 22
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- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 239000013078 crystal Substances 0.000 description 5
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- 238000009413 insulation Methods 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- Junction Field-Effect Transistors (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014153463A JP6055799B2 (ja) | 2014-07-29 | 2014-07-29 | 半導体装置とその製造方法 |
JP2014-153463 | 2014-07-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105322008A CN105322008A (zh) | 2016-02-10 |
CN105322008B true CN105322008B (zh) | 2018-06-15 |
Family
ID=55079737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510446730.9A Active CN105322008B (zh) | 2014-07-29 | 2015-07-27 | 半导体器件及其制造方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US9536873B2 (ja) |
JP (1) | JP6055799B2 (ja) |
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KR102182016B1 (ko) * | 2013-12-02 | 2020-11-23 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 회로 |
WO2016143265A1 (ja) * | 2015-03-11 | 2016-09-15 | パナソニック株式会社 | 窒化物半導体装置 |
US10756084B2 (en) * | 2015-03-26 | 2020-08-25 | Wen-Jang Jiang | Group-III nitride semiconductor device and method for fabricating the same |
JP6299658B2 (ja) * | 2015-04-22 | 2018-03-28 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
JP6263498B2 (ja) | 2015-05-21 | 2018-01-17 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
US10985284B2 (en) | 2016-04-15 | 2021-04-20 | Macom Technology Solutions Holdings, Inc. | High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current |
CN107768248A (zh) * | 2016-08-19 | 2018-03-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN基增强型HEMT器件的制备方法 |
JP2018085456A (ja) | 2016-11-24 | 2018-05-31 | 日機装株式会社 | 半導体発光素子の製造方法 |
TWI623967B (zh) * | 2017-08-25 | 2018-05-11 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
US10032938B1 (en) | 2017-10-03 | 2018-07-24 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for manufacturing the same |
CN113875019A (zh) * | 2020-04-30 | 2021-12-31 | 英诺赛科(苏州)半导体有限公司 | 半导体器件以及制造半导体器件的方法 |
WO2022032558A1 (en) * | 2020-08-13 | 2022-02-17 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device structures and methods of manufacturing the same |
EP4310918A1 (en) | 2022-07-21 | 2024-01-24 | Infineon Technologies Austria AG | Semiconductor device and method of fabricating a semiconductor device |
WO2024040563A1 (en) * | 2022-08-26 | 2024-02-29 | Innoscience (suzhou) Semiconductor Co., Ltd. | Semiconductor device structures and methods of manufacturing the same |
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JP2012060066A (ja) | 2010-09-13 | 2012-03-22 | Toyota Motor Corp | AlGaN酸化膜を有する半導体装置、及び、その製造方法 |
JP5776217B2 (ja) | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
WO2013011617A1 (ja) | 2011-07-15 | 2013-01-24 | パナソニック株式会社 | 半導体装置及びその製造方法 |
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JP5794241B2 (ja) | 2013-02-06 | 2015-10-14 | 信越化学工業株式会社 | マイクロ構造体用樹脂構造体の製造方法及びマイクロ構造体の製造方法 |
EP2793255B8 (en) * | 2013-04-16 | 2018-01-17 | IMEC vzw | Manufacturing method of a semiconductor device comprising a schottky diode and a high electron mobility transistor |
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