CN105244358B - 固态图像拾取装置、其制造方法和图像拾取系统 - Google Patents
固态图像拾取装置、其制造方法和图像拾取系统 Download PDFInfo
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- CN105244358B CN105244358B CN201510549978.8A CN201510549978A CN105244358B CN 105244358 B CN105244358 B CN 105244358B CN 201510549978 A CN201510549978 A CN 201510549978A CN 105244358 B CN105244358 B CN 105244358B
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- insulating film
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011026347 | 2011-02-09 | ||
| JP2011-026347 | 2011-02-09 | ||
| JP2011-223291 | 2011-10-07 | ||
| JP2011223291A JP2012182426A (ja) | 2011-02-09 | 2011-10-07 | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
| CN2012100279294A CN102637708A (zh) | 2011-02-09 | 2012-02-09 | 固态图像拾取装置、其制造方法和图像拾取系统 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100279294A Division CN102637708A (zh) | 2011-02-09 | 2012-02-09 | 固态图像拾取装置、其制造方法和图像拾取系统 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105244358A CN105244358A (zh) | 2016-01-13 |
| CN105244358B true CN105244358B (zh) | 2018-10-02 |
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| CN2012100279294A Pending CN102637708A (zh) | 2011-02-09 | 2012-02-09 | 固态图像拾取装置、其制造方法和图像拾取系统 |
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| CN2012100279294A Pending CN102637708A (zh) | 2011-02-09 | 2012-02-09 | 固态图像拾取装置、其制造方法和图像拾取系统 |
Country Status (3)
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|---|---|
| US (2) | US8987852B2 (enExample) |
| JP (1) | JP2012182426A (enExample) |
| CN (2) | CN105244358B (enExample) |
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| JP5402083B2 (ja) * | 2008-09-29 | 2014-01-29 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP5806635B2 (ja) * | 2012-03-30 | 2015-11-10 | 富士フイルム株式会社 | 固体撮像素子の製造方法 |
| US9659991B2 (en) | 2012-10-22 | 2017-05-23 | Canon Kabushiki Kaisha | Image capturing apparatus, manufacturing method thereof, and camera |
| JP2014086515A (ja) * | 2012-10-22 | 2014-05-12 | Canon Inc | 撮像装置、その製造方法及びカメラ |
| JP2014150230A (ja) * | 2013-02-04 | 2014-08-21 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
| JP6278608B2 (ja) | 2013-04-08 | 2018-02-14 | キヤノン株式会社 | 半導体装置およびその製造方法 |
| JP6121263B2 (ja) * | 2013-06-26 | 2017-04-26 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| JP6136663B2 (ja) * | 2013-07-04 | 2017-05-31 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
| US9356061B2 (en) | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
| JP2015037120A (ja) * | 2013-08-13 | 2015-02-23 | 株式会社東芝 | 固体撮像装置 |
| JP5956968B2 (ja) * | 2013-09-13 | 2016-07-27 | 株式会社東芝 | 受光素子および光結合型信号絶縁装置 |
| JP2017050298A (ja) * | 2014-01-21 | 2017-03-09 | パナソニックＩｐマネジメント株式会社 | 固体撮像装置及びその製造方法 |
| JP6347621B2 (ja) * | 2014-02-13 | 2018-06-27 | キヤノン株式会社 | 固体撮像素子及び撮像装置 |
| JP6300564B2 (ja) * | 2014-02-18 | 2018-03-28 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
| JP6274567B2 (ja) * | 2014-03-14 | 2018-02-07 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP6346488B2 (ja) * | 2014-04-21 | 2018-06-20 | キヤノン株式会社 | 半導体装置、固体撮像装置、それらの製造方法およびカメラ |
| US9608033B2 (en) * | 2014-05-12 | 2017-03-28 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and camera |
| JP6325904B2 (ja) * | 2014-06-02 | 2018-05-16 | キヤノン株式会社 | 固体撮像装置の製造方法、固体撮像装置、および、カメラ |
| JP6173259B2 (ja) * | 2014-06-02 | 2017-08-02 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP2015230929A (ja) * | 2014-06-03 | 2015-12-21 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP2016001709A (ja) * | 2014-06-12 | 2016-01-07 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP6362093B2 (ja) * | 2014-06-13 | 2018-07-25 | キヤノン株式会社 | 固体撮像装置の製造方法及び固体撮像装置 |
| JP6598436B2 (ja) * | 2014-08-08 | 2019-10-30 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
| JP6579756B2 (ja) * | 2015-02-10 | 2019-09-25 | キヤノン株式会社 | 固体撮像素子およびそれを用いた撮像装置 |
| JP6685653B2 (ja) * | 2015-05-14 | 2020-04-22 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP6727897B2 (ja) * | 2015-05-19 | 2020-07-22 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法、および撮像システム |
| JP2017022293A (ja) * | 2015-07-13 | 2017-01-26 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP2017045838A (ja) * | 2015-08-26 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| JP6983925B2 (ja) * | 2015-09-11 | 2021-12-17 | キヤノン株式会社 | 撮像装置 |
| JP6664175B2 (ja) | 2015-09-11 | 2020-03-13 | キヤノン株式会社 | 撮像装置及び撮像装置の製造方法 |
| JP6676365B2 (ja) | 2015-12-21 | 2020-04-08 | キヤノン株式会社 | 撮像装置の製造方法 |
| US10319765B2 (en) * | 2016-07-01 | 2019-06-11 | Canon Kabushiki Kaisha | Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter |
| JP6833470B2 (ja) * | 2016-11-17 | 2021-02-24 | キヤノン株式会社 | 固体撮像装置、撮像システム、及び固体撮像装置の製造方法 |
| JP6650898B2 (ja) * | 2017-02-28 | 2020-02-19 | キヤノン株式会社 | 光電変換装置、電子機器および輸送機器 |
| JP2017130693A (ja) * | 2017-04-13 | 2017-07-27 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| JP2018186211A (ja) * | 2017-04-27 | 2018-11-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6664353B2 (ja) | 2017-07-11 | 2020-03-13 | キヤノン株式会社 | 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法 |
| JP7449695B2 (ja) * | 2017-10-04 | 2024-03-14 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子及び電子装置 |
| JP6617780B2 (ja) * | 2018-02-14 | 2019-12-11 | セイコーエプソン株式会社 | 透過型液晶表示装置、および電子機器 |
| JP6645527B2 (ja) | 2018-02-27 | 2020-02-14 | セイコーエプソン株式会社 | 透過型液晶表示装置、および電子機器 |
| JPWO2021131539A1 (enExample) * | 2019-12-27 | 2021-07-01 | ||
| JP2021119375A (ja) * | 2020-01-30 | 2021-08-12 | 株式会社ジャパンディスプレイ | 表示装置、および、半導体装置の製造方法 |
| JP7009529B2 (ja) * | 2020-02-18 | 2022-01-25 | キヤノン株式会社 | 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法 |
| CN114449193A (zh) * | 2020-10-30 | 2022-05-06 | 三星电子株式会社 | 包括分色透镜阵列的图像传感器和包括该图像传感器的电子装置 |
| CN115669260A (zh) * | 2021-05-12 | 2023-01-31 | 长江存储科技有限责任公司 | 具有三维晶体管的存储器外围电路及其形成方法 |
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| CN101211835A (zh) * | 2006-12-29 | 2008-07-02 | 东部高科股份有限公司 | Cmos图像传感器及其制造方法 |
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| US8987852B2 (en) | 2015-03-24 |
| US9373658B2 (en) | 2016-06-21 |
| US20150179700A1 (en) | 2015-06-25 |
| US20120199893A1 (en) | 2012-08-09 |
| CN102637708A (zh) | 2012-08-15 |
| CN105244358A (zh) | 2016-01-13 |
| JP2012182426A (ja) | 2012-09-20 |
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