JP6650898B2 - 光電変換装置、電子機器および輸送機器 - Google Patents
光電変換装置、電子機器および輸送機器 Download PDFInfo
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- JP6650898B2 JP6650898B2 JP2017037713A JP2017037713A JP6650898B2 JP 6650898 B2 JP6650898 B2 JP 6650898B2 JP 2017037713 A JP2017037713 A JP 2017037713A JP 2017037713 A JP2017037713 A JP 2017037713A JP 6650898 B2 JP6650898 B2 JP 6650898B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 101
- 239000000758 substrate Substances 0.000 claims description 53
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 150000003377 silicon compounds Chemical class 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 4
- 150000003609 titanium compounds Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 55
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
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- 230000002093 peripheral effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
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- 150000003608 titanium Chemical class 0.000 description 1
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Description
20 遮光部材
201 下面
202 上面
203 側面
30 誘電体部材
302 表面
342 傾斜領域
40 誘電体膜
401、411、421、431 内面
402、412、422、432 外面
Claims (20)
- 主面に沿って複数の光電変換部が配列された光電変換エリアを有する基板と、
前記光電変換エリアの上に配され、前記基板の側の内面および前記基板の側とは反対側の外面を有する膜と、
前記膜と前記光電変換エリアとの間に配され、前記基板の側に位置する下面、前記基板の側とは反対側に位置する上面、および、前記下面と前記上面とを結ぶ側面を有し、遮光体からなる第1部材と、
少なくとも前記膜と前記上面との間に配された第2部材と、
前記膜の上に配されたカラーフィルターと、
を備える光電変換装置であって、
前記主面から前記上面までの距離は、前記主面から前記カラーフィルターまでの距離はよりも小さく、
前記膜は、前記基板の主面に対する法線方向において前記光電変換部の少なくとも一部に重なる第1部分と、前記法線方向において前記上面に重なる第2部分と、前記第1部分と前記第2部分との間に位置する第3部分と、を含み、
前記主面から前記第1部分の前記内面までの距離は、前記主面から前記下面までの距離よりも大きく、かつ、前記主面から前記上面までの距離よりも小さく、
前記主面から前記第1部分の前記外面までの距離は前記主面から前記第2部分の前記外面までの距離よりも小さく、前記第3部分の前記外面は前記上面に対して傾斜しており、
前記第2部材の前記膜の側の表面は、前記法線方向における前記膜と前記上面との間にて、前記上面に対して傾斜しており、
前記第2部材は、前記法線方向において前記膜と前記上面との間に位置する第4部分と、前記側面と前記第3部分との間に位置する第5部分と、前記第1部分と前記光電変換部との間に位置する第6部分と、を有し、
前記主面から前記第6部分までの距離は前記主面から前記下面までの距離よりも小さく、
(A)前記第2部材は前記膜よりも低い屈折率を有すること、
(B)前記膜および前記第2部材はシリコン化合物であって、前記第2部材は前記膜よりも低い窒素濃度および/または高い酸素濃度を有すること、
の少なくともいずれかを満たすことを特徴とする光電変換装置。 - 主面に沿って複数の光電変換部が配列された光電変換エリアを有する基板と、
前記光電変換エリアの上に配され、前記基板の側の内面および前記基板の側とは反対側の外面を有する膜と、
前記膜と前記光電変換エリアとの間に配され、前記基板の側に位置する下面、前記基板の側とは反対側に位置する上面、および、前記下面と前記上面とを結ぶ側面を有し、遮光体からなる第1部材と、
少なくとも前記膜と前記上面との間に配された第2部材と、を備える光電変換装置であって、
前記膜は、前記基板の主面に対する法線方向において前記光電変換部の少なくとも一部に重なる第1部分と、前記法線方向において前記上面に重なる第2部分と、前記第1部分と前記第2部分との間に位置する第3部分と、を含み、
前記主面から前記第1部分の前記内面までの距離は、前記主面から前記下面までの距離よりも大きく、かつ、前記主面から前記上面までの距離よりも小さく、
前記主面から前記第1部分の前記外面までの距離は前記主面から前記第2部分の前記外面までの距離よりも小さく、前記第3部分の前記外面は前記上面に対して傾斜しており、
前記第2部材は、前記法線方向において前記膜と前記上面との間に位置する第4部分と、前記側面と前記第3部分との間に位置する第5部分と、前記第1部分と前記光電変換部との間に位置する第6部分と、を有し、
前記法線方向における前記第4部分の厚さは、前記側面から前記第3部分の前記内面までの距離の2倍よりも大きく、
(A)前記第2部材は前記膜よりも低い屈折率を有すること、
(B)前記膜および前記第2部材はシリコン化合物であって、前記第2部材は前記膜よりも低い窒素濃度および/または高い酸素濃度を有すること、
の少なくともいずれかを満たすことを特徴とする光電変換装置。 - 前記第2部材の前記膜の側の表面は、前記法線方向における前記膜と前記上面との間にて、前記上面に対して傾斜している、請求項2に記載の光電変換装置。
- 前記主面から前記第6部分までの距離は前記主面から前記下面までの距離よりも小さい、請求項2または3に記載の光電変換装置。
- 前記主面から前記第1部分の前記外面までの距離は前記主面から前記第2部分の前記内面までの距離よりも小さい、請求項1乃至4のいずれか1項に記載の光電変換装置。
- 前記主面から前記第1部分の前記外面までの距離と前記主面から前記上面までの距離との差は、前記下面から前記上面までの距離の半分よりも小さい、請求項1乃至5のいずれか1項に記載の光電変換装置。
- 前記法線方向における前記第2部分の厚さは、前記法線方向における前記第1部材の厚さよりも小さい、請求項1乃至6のいずれか1項に記載の光電変換装置。
- 前記上面から前記第2部分の前記外面までの距離は、前記法線方向における前記第1部材の厚さよりも小さい、請求項1乃至7のいずれか1項に記載の光電変換装置。
- 前記法線方向における前記第4部分の厚さは前記上面の幅の1/4以上である、請求項1乃至8のいずれか1項に記載の光電変換装置。
- 前記法線方向における前記第4部分の厚さは、前記法線方向における前記第2部分の厚さよりも小さい、請求項1乃至9のいずれか1項に記載の光電変換装置。
- 前記法線方向における前記第4部分の厚さおよび前記法線方向における前記第6部分の厚さは、前記側面に垂直な方向における前記第5部分の厚さよりも大きく、請求項1乃至10のいずれか1項に記載の光電変換装置。
- 前記側面に垂直な方向における前記第5部分の厚さは、前記法線方向における前記第6部分の厚さの半分未満である、請求項1乃至11のいずれか1項に記載の光電変換装置。
- 前記外面は、前記法線方向において前記第1部材に重なる位置において前記上面に対して傾斜している、請求項1乃至12のいずれか1項に記載の光電変換装置。
- 前記上面はチタンまたはチタン化合物で構成されており、前記側面はアルミニウムで構成されている、請求項1乃至13のいずれか1項に記載の光電変換装置。
- 前記膜は、第1層と、前記第1層よりも厚い第2層とを有する複層膜であり、前記第1層が前記内面を構成する、請求項1乃至14のいずれか1項に記載の光電変換装置。
- 前記第1層および前記第2層はシリコン化合物であって、前記第2層は前記第1層よりも高い窒素濃度を有する、請求項15に記載の光電変換装置。
- 前記膜は、前記第2層よりも薄い第3層を有する複層膜であり、前記第3層が前記外面を構成する、請求項15または16に記載の光電変換装置。
- 前記膜および前記第2部材はシリコン化合物であって、前記第2部材は前記膜よりも高いアルゴン濃度を有する、請求項1乃至17のいずれか1項に記載の光電変換装置。
- 請求項1乃至18のいずれか1項に記載の光電変換装置を備える機器であって、
前記光電変換装置に結像する光学系、前記光電変換装置を制御する制御装置、前記光電変換装置から出力された信号を処理する処理装置、前記光電変換装置で得られた情報を表示する表示装置、および、前記光電変換装置で得られた情報を記憶する記憶装置の少なくともいずれかと、をさらに備えることを特徴とする電子機器。 - 請求項1乃至19のいずれか1項に記載の光電変換装置を備える機器であって、
機械装置と、
前記光電変換装置で得られた情報に基づいて前記機械装置を操作するための処理を行う処理装置と、をさらに備えることを特徴とする機器。
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