CN105070673A - 基板的处理装置及处理方法 - Google Patents

基板的处理装置及处理方法 Download PDF

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Publication number
CN105070673A
CN105070673A CN201510451334.5A CN201510451334A CN105070673A CN 105070673 A CN105070673 A CN 105070673A CN 201510451334 A CN201510451334 A CN 201510451334A CN 105070673 A CN105070673 A CN 105070673A
Authority
CN
China
Prior art keywords
semiconductor wafer
substrate
etching
processing
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510451334.5A
Other languages
English (en)
Chinese (zh)
Inventor
林航之介
松井绘美
大田垣崇
桧森洋辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority claimed from CN201210574314.3A external-priority patent/CN103187341B/zh
Publication of CN105070673A publication Critical patent/CN105070673A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201510451334.5A 2011-12-27 2012-12-26 基板的处理装置及处理方法 Pending CN105070673A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011285877 2011-12-27
JP2011-285877 2011-12-27
JP2012263347A JP6091193B2 (ja) 2011-12-27 2012-11-30 基板の処理装置及び処理方法
JP2012-263347 2012-11-30
CN201210574314.3A CN103187341B (zh) 2011-12-27 2012-12-26 基板的处理装置及处理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201210574314.3A Division CN103187341B (zh) 2011-12-27 2012-12-26 基板的处理装置及处理方法

Publications (1)

Publication Number Publication Date
CN105070673A true CN105070673A (zh) 2015-11-18

Family

ID=49049249

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510451334.5A Pending CN105070673A (zh) 2011-12-27 2012-12-26 基板的处理装置及处理方法

Country Status (4)

Country Link
JP (2) JP6091193B2 (enExample)
KR (1) KR101432009B1 (enExample)
CN (1) CN105070673A (enExample)
TW (2) TWI494992B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111106035A (zh) * 2018-10-26 2020-05-05 东京毅力科创株式会社 基片处理装置的控制装置和基片处理装置的控制方法
CN117448748A (zh) * 2023-11-02 2024-01-26 浙江众凌科技有限公司 一种用于掩膜版生产用的喷压设备及其生产工艺

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289961B2 (ja) 2014-03-27 2018-03-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
KR101680214B1 (ko) * 2015-01-22 2016-11-28 주식회사 엘지실트론 웨이퍼 이송 장치
DE102017212887A1 (de) 2017-07-26 2019-01-31 Gebr. Schmid Gmbh Verfahren, Vorrichtung und Anlage zur Leiterplattenherstellung
JP7273660B2 (ja) 2019-08-30 2023-05-15 キオクシア株式会社 半導体製造装置、および半導体装置の製造方法
JP7544625B2 (ja) * 2021-03-04 2024-09-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理方法

Citations (7)

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JPH03265586A (ja) * 1990-03-15 1991-11-26 Toshiba Corp 窒化アルミニウム基板の製造方法
JPH09223680A (ja) * 1996-02-16 1997-08-26 Disco Abrasive Syst Ltd エッチング機能付き研磨装置
JP2003203897A (ja) * 2002-01-08 2003-07-18 Toshiba Corp ノズル、基板処理装置、基板処理方法、及び基板処理プログラム
JP2003282491A (ja) * 2002-03-22 2003-10-03 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法
CN1452018A (zh) * 2002-04-12 2003-10-29 韩国Dns株式会社 带厚度测量系统的旋转刻蚀器
CN1632165A (zh) * 2004-12-28 2005-06-29 北京科技大学 一种在硬质合金工具上制备金刚石涂层的方法
JP2010171330A (ja) * 2009-01-26 2010-08-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法、欠陥除去方法およびエピタキシャルウェハ

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JPS63256342A (ja) * 1987-04-10 1988-10-24 Sumitomo Electric Ind Ltd 半導体ウエ−ハの研削方法
JP3748527B2 (ja) * 2001-09-26 2006-02-22 大日本スクリーン製造株式会社 エッチング装置およびエッチング方法
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
JP2005262406A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 研磨装置および半導体装置の製造方法
WO2005104638A1 (ja) * 2004-04-23 2005-11-03 Matsushita Electric Works, Ltd. 配線基板およびその製造方法
JP3638020B1 (ja) * 2004-09-17 2005-04-13 孝昭 鈴木 ウエハの薄厚化方法、及びウエハの薄厚化装置
JP2008166576A (ja) * 2006-12-28 2008-07-17 Rohm Co Ltd 半導体装置の製造方法
JP4937674B2 (ja) * 2006-08-16 2012-05-23 株式会社ディスコ ウエーハのエッチング方法
JP2009224511A (ja) * 2008-03-14 2009-10-01 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP5422907B2 (ja) * 2008-04-11 2014-02-19 富士電機株式会社 半導体装置の製造方法
JP5012632B2 (ja) * 2008-04-15 2012-08-29 富士電機株式会社 半導体装置の製造方法
JP2010040543A (ja) * 2008-07-31 2010-02-18 Sumco Corp 半導体ウェーハの加工装置
JP2011086654A (ja) * 2009-10-13 2011-04-28 Seiko Epson Corp 基板の加工方法及び基板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03265586A (ja) * 1990-03-15 1991-11-26 Toshiba Corp 窒化アルミニウム基板の製造方法
JPH09223680A (ja) * 1996-02-16 1997-08-26 Disco Abrasive Syst Ltd エッチング機能付き研磨装置
JP2003203897A (ja) * 2002-01-08 2003-07-18 Toshiba Corp ノズル、基板処理装置、基板処理方法、及び基板処理プログラム
JP2003282491A (ja) * 2002-03-22 2003-10-03 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法
CN1452018A (zh) * 2002-04-12 2003-10-29 韩国Dns株式会社 带厚度测量系统的旋转刻蚀器
CN1632165A (zh) * 2004-12-28 2005-06-29 北京科技大学 一种在硬质合金工具上制备金刚石涂层的方法
JP2010171330A (ja) * 2009-01-26 2010-08-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法、欠陥除去方法およびエピタキシャルウェハ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111106035A (zh) * 2018-10-26 2020-05-05 东京毅力科创株式会社 基片处理装置的控制装置和基片处理装置的控制方法
CN117448748A (zh) * 2023-11-02 2024-01-26 浙江众凌科技有限公司 一种用于掩膜版生产用的喷压设备及其生产工艺

Also Published As

Publication number Publication date
TWI494992B (zh) 2015-08-01
TWI601202B (zh) 2017-10-01
KR101432009B1 (ko) 2014-08-20
JP2013153141A (ja) 2013-08-08
JP6321234B2 (ja) 2018-05-09
TW201334055A (zh) 2013-08-16
KR20140024948A (ko) 2014-03-03
JP2017085174A (ja) 2017-05-18
JP6091193B2 (ja) 2017-03-08
TW201535506A (zh) 2015-09-16

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Application publication date: 20151118

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