CN104882360B - 等离子体处理装置的清洁方法 - Google Patents

等离子体处理装置的清洁方法 Download PDF

Info

Publication number
CN104882360B
CN104882360B CN201510089197.5A CN201510089197A CN104882360B CN 104882360 B CN104882360 B CN 104882360B CN 201510089197 A CN201510089197 A CN 201510089197A CN 104882360 B CN104882360 B CN 104882360B
Authority
CN
China
Prior art keywords
gas
plasma
cleaning
processing
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510089197.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN104882360A (zh
Inventor
宇田浩
辻本宏
原田彰俊
药师寺秀明
杉山正治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN104882360A publication Critical patent/CN104882360A/zh
Application granted granted Critical
Publication of CN104882360B publication Critical patent/CN104882360B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN201510089197.5A 2014-02-27 2015-02-27 等离子体处理装置的清洁方法 Active CN104882360B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-036382 2014-02-27
JP2014036382A JP6284786B2 (ja) 2014-02-27 2014-02-27 プラズマ処理装置のクリーニング方法

Publications (2)

Publication Number Publication Date
CN104882360A CN104882360A (zh) 2015-09-02
CN104882360B true CN104882360B (zh) 2020-11-06

Family

ID=52577681

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510089197.5A Active CN104882360B (zh) 2014-02-27 2015-02-27 等离子体处理装置的清洁方法

Country Status (6)

Country Link
US (1) US20150243489A1 (enExample)
EP (1) EP2913845A1 (enExample)
JP (1) JP6284786B2 (enExample)
KR (1) KR102283188B1 (enExample)
CN (1) CN104882360B (enExample)
TW (1) TWI685033B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6460947B2 (ja) * 2015-09-16 2019-01-30 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR102541747B1 (ko) * 2015-11-30 2023-06-08 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 챔버 클리닝 방법
CN105590849B (zh) * 2016-02-29 2018-08-28 上海华力微电子有限公司 一种解决hdp psg制程厚度均一性持续跳高的方法
KR101792828B1 (ko) 2016-06-29 2017-11-01 삼성중공업 주식회사 세정장치를 구비한 오염물질 저감장치 및 그의 세정방법
JP6635888B2 (ja) * 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
US10546762B2 (en) * 2016-11-18 2020-01-28 Applied Materials, Inc. Drying high aspect ratio features
JP6688763B2 (ja) * 2017-05-30 2020-04-28 東京エレクトロン株式会社 プラズマ処理方法
JP6902941B2 (ja) * 2017-06-29 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP2020017676A (ja) * 2018-07-26 2020-01-30 株式会社ディスコ ウェーハの加工方法
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
JP7061140B2 (ja) * 2019-02-27 2022-04-27 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
CN111424260B (zh) * 2020-06-09 2020-09-11 上海陛通半导体能源科技股份有限公司 具有高效清洁能力的化学气相沉积设备及半导体工艺方法
CN114798591B (zh) * 2021-01-27 2023-08-18 中国科学院微电子研究所 基于晶片清理仓的气压调控装置及方法
US20230120710A1 (en) * 2021-10-15 2023-04-20 Applied Materials, Inc. Downstream residue management hardware
CN114373665B (zh) * 2021-12-22 2025-03-07 江苏鲁汶仪器股份有限公司 一种具有终点检测功能的离子束刻蚀系统
WO2023148861A1 (ja) * 2022-02-02 2023-08-10 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
CN115415054A (zh) * 2022-09-16 2022-12-02 上海华力微电子有限公司 工艺腔的清洁方法
US12580164B2 (en) * 2022-11-30 2026-03-17 Texas Instruments Incorporated Semiconductor processing tool cleaning

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1319146A (zh) * 1998-04-20 2001-10-24 东京电子有限公司 化学气相沉积室钝化方法
TW200401352A (en) * 2002-07-12 2004-01-16 Hynix Semiconductor Inc Method for improving reliability of reaction apparatus
US20040013818A1 (en) * 2002-07-19 2004-01-22 Moon Kwang-Jin Method of cleaning a chemical vapor deposition chamber
US20070184996A1 (en) * 2006-02-06 2007-08-09 Cheng-Ming Weng Cleaning agent and method of removing residue left after plasma process
US20120237693A1 (en) * 2011-03-17 2012-09-20 Applied Materials, Inc. In-situ clean process for metal deposition chambers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW507015B (en) * 1997-12-02 2002-10-21 Applied Materials Inc In-situ, preclean of wafers prior to a chemical vapor deposition titanium deposition step
US6566270B1 (en) * 2000-09-15 2003-05-20 Applied Materials Inc. Integration of silicon etch and chamber cleaning processes
JP4176365B2 (ja) 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
JP4401656B2 (ja) * 2003-01-10 2010-01-20 パナソニック株式会社 半導体装置の製造方法
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8399360B1 (en) * 2005-11-17 2013-03-19 Cypress Semiconductor Corporation Process for post contact-etch clean
US7575007B2 (en) * 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
JP5364514B2 (ja) * 2009-09-03 2013-12-11 東京エレクトロン株式会社 チャンバ内クリーニング方法
JP5705495B2 (ja) * 2010-10-07 2015-04-22 株式会社日立ハイテクノロジーズ プラズマの処理方法及びプラズマ処理装置
JP2012243958A (ja) * 2011-05-19 2012-12-10 Hitachi High-Technologies Corp プラズマ処理方法
US9533332B2 (en) * 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
US20140179106A1 (en) * 2012-12-21 2014-06-26 Lam Research Corporation In-situ metal residue clean

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1319146A (zh) * 1998-04-20 2001-10-24 东京电子有限公司 化学气相沉积室钝化方法
TW200401352A (en) * 2002-07-12 2004-01-16 Hynix Semiconductor Inc Method for improving reliability of reaction apparatus
US20040013818A1 (en) * 2002-07-19 2004-01-22 Moon Kwang-Jin Method of cleaning a chemical vapor deposition chamber
US20070184996A1 (en) * 2006-02-06 2007-08-09 Cheng-Ming Weng Cleaning agent and method of removing residue left after plasma process
US20120237693A1 (en) * 2011-03-17 2012-09-20 Applied Materials, Inc. In-situ clean process for metal deposition chambers

Also Published As

Publication number Publication date
US20150243489A1 (en) 2015-08-27
CN104882360A (zh) 2015-09-02
KR20150101927A (ko) 2015-09-04
JP2015162544A (ja) 2015-09-07
EP2913845A1 (en) 2015-09-02
TW201546899A (zh) 2015-12-16
JP6284786B2 (ja) 2018-02-28
KR102283188B1 (ko) 2021-07-29
TWI685033B (zh) 2020-02-11

Similar Documents

Publication Publication Date Title
CN104882360B (zh) 等离子体处理装置的清洁方法
JP6646978B2 (ja) 高アスペクト比構造におけるコンタクト洗浄
TWI661461B (zh) 電漿處理方法及電漿處理裝置
US7500445B2 (en) Method and apparatus for cleaning a CVD chamber
TWI254363B (en) Chamber cleaning method
TWI697046B (zh) 蝕刻方法
TWI779753B (zh) 電漿處理裝置及被處理體處理方法
US6943039B2 (en) Method of etching ferroelectric layers
US10553409B2 (en) Method of cleaning plasma processing apparatus
TWI766907B (zh) 電漿處理裝置及電漿處理方法
US11798793B2 (en) Substrate processing method, component processing method, and substrate processing apparatus
KR20150124392A (ko) 드라이 클리닝 방법 및 플라즈마 처리 장치
KR102538188B1 (ko) 플라즈마 처리 장치의 세정 방법
KR20150043978A (ko) 플라즈마 처리 방법
JP6952542B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP2016086046A (ja) プラズマ処理方法
US20200168468A1 (en) Etching method and substrate processing apparatus
JP4999185B2 (ja) ドライエッチング方法及びドライエッチング装置
TW201618156A (zh) 電漿處理裝置及電漿處理方法
JP2011243635A (ja) 堆積チャンバのリモートクリーニング方法
TW201721713A (zh) 被處理體之處理方法
KR20220011582A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20230115456A (ko) 기판 처리 장치 및 이를 이용한 반도체 장치 제조 방법
JP2015106587A (ja) 静電チャックのコーティング方法及びプラズマ処理装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant