JP6284786B2 - プラズマ処理装置のクリーニング方法 - Google Patents

プラズマ処理装置のクリーニング方法 Download PDF

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Publication number
JP6284786B2
JP6284786B2 JP2014036382A JP2014036382A JP6284786B2 JP 6284786 B2 JP6284786 B2 JP 6284786B2 JP 2014036382 A JP2014036382 A JP 2014036382A JP 2014036382 A JP2014036382 A JP 2014036382A JP 6284786 B2 JP6284786 B2 JP 6284786B2
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Japan
Prior art keywords
gas
cleaning
processing container
plasma
processing
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Active
Application number
JP2014036382A
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English (en)
Japanese (ja)
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JP2015162544A5 (enExample
JP2015162544A (ja
Inventor
浩 宇田
浩 宇田
辻本　宏
宏 辻本
彰俊 原田
彰俊 原田
薬師寺　秀明
秀明 薬師寺
正治 杉山
正治 杉山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014036382A priority Critical patent/JP6284786B2/ja
Priority to KR1020150021628A priority patent/KR102283188B1/ko
Priority to US14/623,765 priority patent/US20150243489A1/en
Priority to EP15156143.8A priority patent/EP2913845A1/en
Priority to TW104105959A priority patent/TWI685033B/zh
Priority to CN201510089197.5A priority patent/CN104882360B/zh
Publication of JP2015162544A publication Critical patent/JP2015162544A/ja
Publication of JP2015162544A5 publication Critical patent/JP2015162544A5/ja
Application granted granted Critical
Publication of JP6284786B2 publication Critical patent/JP6284786B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H10P50/283—
    • H10P50/73—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2014036382A 2014-02-27 2014-02-27 プラズマ処理装置のクリーニング方法 Active JP6284786B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014036382A JP6284786B2 (ja) 2014-02-27 2014-02-27 プラズマ処理装置のクリーニング方法
KR1020150021628A KR102283188B1 (ko) 2014-02-27 2015-02-12 플라즈마 처리 장치의 클리닝 방법
US14/623,765 US20150243489A1 (en) 2014-02-27 2015-02-17 Cleaning method for plasma processing apparatus
EP15156143.8A EP2913845A1 (en) 2014-02-27 2015-02-23 Cleaning method for plasma processing apparatus
TW104105959A TWI685033B (zh) 2014-02-27 2015-02-25 電漿處理裝置之清潔方法
CN201510089197.5A CN104882360B (zh) 2014-02-27 2015-02-27 等离子体处理装置的清洁方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014036382A JP6284786B2 (ja) 2014-02-27 2014-02-27 プラズマ処理装置のクリーニング方法

Publications (3)

Publication Number Publication Date
JP2015162544A JP2015162544A (ja) 2015-09-07
JP2015162544A5 JP2015162544A5 (enExample) 2017-03-16
JP6284786B2 true JP6284786B2 (ja) 2018-02-28

Family

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Family Applications (1)

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JP2014036382A Active JP6284786B2 (ja) 2014-02-27 2014-02-27 プラズマ処理装置のクリーニング方法

Country Status (6)

Country Link
US (1) US20150243489A1 (enExample)
EP (1) EP2913845A1 (enExample)
JP (1) JP6284786B2 (enExample)
KR (1) KR102283188B1 (enExample)
CN (1) CN104882360B (enExample)
TW (1) TWI685033B (enExample)

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JP6460947B2 (ja) * 2015-09-16 2019-01-30 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
CN108292598B (zh) * 2015-11-30 2022-09-02 东京毅力科创株式会社 基板处理装置的腔室清洁方法
CN105590849B (zh) * 2016-02-29 2018-08-28 上海华力微电子有限公司 一种解决hdp psg制程厚度均一性持续跳高的方法
KR101792828B1 (ko) 2016-06-29 2017-11-01 삼성중공업 주식회사 세정장치를 구비한 오염물질 저감장치 및 그의 세정방법
JP6635888B2 (ja) * 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
US10546762B2 (en) * 2016-11-18 2020-01-28 Applied Materials, Inc. Drying high aspect ratio features
JP6688763B2 (ja) * 2017-05-30 2020-04-28 東京エレクトロン株式会社 プラズマ処理方法
JP6902941B2 (ja) * 2017-06-29 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP2020017676A (ja) * 2018-07-26 2020-01-30 株式会社ディスコ ウェーハの加工方法
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
US20200273683A1 (en) * 2019-02-27 2020-08-27 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
CN111424260B (zh) * 2020-06-09 2020-09-11 上海陛通半导体能源科技股份有限公司 具有高效清洁能力的化学气相沉积设备及半导体工艺方法
CN114798591B (zh) * 2021-01-27 2023-08-18 中国科学院微电子研究所 基于晶片清理仓的气压调控装置及方法
US20230120710A1 (en) * 2021-10-15 2023-04-20 Applied Materials, Inc. Downstream residue management hardware
CN114373665B (zh) * 2021-12-22 2025-03-07 江苏鲁汶仪器股份有限公司 一种具有终点检测功能的离子束刻蚀系统
CN119013769A (zh) * 2022-02-02 2024-11-22 东京毅力科创株式会社 等离子体处理装置的清洁方法
CN115415054A (zh) * 2022-09-16 2022-12-02 上海华力微电子有限公司 工艺腔的清洁方法
US20240177977A1 (en) * 2022-11-30 2024-05-30 Texas Instruments Incorporated Semiconductor processing tool cleaning

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US6635569B1 (en) * 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
US6566270B1 (en) * 2000-09-15 2003-05-20 Applied Materials Inc. Integration of silicon etch and chamber cleaning processes
JP4176365B2 (ja) 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
KR20040006481A (ko) * 2002-07-12 2004-01-24 주식회사 하이닉스반도체 식각 및 증착장비의 항상성 개선방법
KR100447284B1 (ko) * 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
JP4401656B2 (ja) * 2003-01-10 2010-01-20 パナソニック株式会社 半導体装置の製造方法
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JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
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US7687446B2 (en) * 2006-02-06 2010-03-30 United Microelectronics Corp. Method of removing residue left after plasma process
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Also Published As

Publication number Publication date
JP2015162544A (ja) 2015-09-07
KR102283188B1 (ko) 2021-07-29
CN104882360B (zh) 2020-11-06
TW201546899A (zh) 2015-12-16
KR20150101927A (ko) 2015-09-04
TWI685033B (zh) 2020-02-11
EP2913845A1 (en) 2015-09-02
US20150243489A1 (en) 2015-08-27
CN104882360A (zh) 2015-09-02

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