CN104744031A - 注射模制的ptc陶瓷 - Google Patents
注射模制的ptc陶瓷 Download PDFInfo
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- CN104744031A CN104744031A CN201510113298.1A CN201510113298A CN104744031A CN 104744031 A CN104744031 A CN 104744031A CN 201510113298 A CN201510113298 A CN 201510113298A CN 104744031 A CN104744031 A CN 104744031A
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- 238000002347 injection Methods 0.000 title claims abstract description 8
- 239000007924 injection Substances 0.000 title claims abstract description 8
- 239000000919 ceramic Substances 0.000 title description 21
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 22
- 239000011230 binding agent Substances 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 15
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 238000001746 injection moulding Methods 0.000 abstract 1
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- 239000011159 matrix material Substances 0.000 description 18
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B28—WORKING CEMENT, CLAY, OR STONE
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
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- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
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- H01C7/025—Perovskites, e.g. titanates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
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Abstract
本发明涉及注射模制的PTC陶瓷。注射模制主体包括具有正温度系数的陶瓷材料,其包含小于10ppm的金属杂质。用于生产注射模制主体的方法包括:提供用于注射模制的进料,其包含小于10ppm的金属杂质;将进料注射到模具中;移除粘合剂;烧结该模制主体;以及,冷却该模制主体。
Description
技术领域
本公开内容涉及注射模制主体,其包括至少在特定温度范围中具有正温度系数(PTC)的陶瓷材料。
背景技术
包括陶瓷材料的模制主体适合于范围广泛的应用。特别地,由于其耐火或难熔(refractory)性质,许多陶瓷材料可有益地用于高温环境中。此外,利用至少在特定温度范围中具有正温度系数(PTC)的陶瓷元件,可控制这种环境的温度。
陶瓷材料的PTC效果包括作为温度T的函数的电阻率ρ的变化。在特定温度范围中,随着温度T的升高,电阻率ρ的变化较小,从所谓的居里温度T
C
开始,电阻率ρ随着温度升高迅速地增加。在这个第二温度范围中,温度系数可在50%K至100%K的范围,温度系数是在给定温度下的电阻率的相对变化。
可通过各种技术形成包括陶瓷材料的模制主体。在挤压技术中,通过模板来压制一种包括陶瓷材料的可模制质量。因此,这样成形的模制主体具有轴线和垂直于该轴线的截面,垂直于该轴线的截面与模板的截面匹配。在干粉末压制技术中,包括陶瓷材料的粉末被压制成模制主体。通过采用这种技术,可生成具有简单几何形状的陶瓷主体(例如,块形主体)。
发明内容
此处,在一方面,描述了用于注射模制PCT陶瓷的方法。通过这种方法,可生产在很大范围各种尺寸的几乎所有类型的复杂形状。在注射模制过程中,包括陶瓷材料的所谓的进料被注射到模具内,模具具有所需的主体形状。之后,执行包括移除粘结剂和烧结的另外加工步骤以获得固体模制主体。
制作过程被设计成使得模制主体具有PCT效果的有益性质或者其特征性特点中的至少某些特点。如果并不谨慎地执行该过程,在25℃温度时的电阻率ρ
25
可能会转移到更高的值。
为了维持PTC效果的特征性特点,PTC陶瓷材料包含小于10ppm(百万分率)的金属杂质。用于注射模制PTC陶瓷材料的合适过程包括以下步骤:
A)提供用于注射模制的进料,其包含小于10 ppm的金属杂质,
B)将进料注射到模具内,
C)移除粘结剂,
D)烧结该模制主体,以及
E)冷却该模制主体。
在整个过程中,为了将金属杂质限制为小于10 ppm而预先作出安排。为此目的,在该过程中使用的、且与陶瓷材料接触的工具具有较低的磨损率,从而使得所得到的模制主体包括小于10 ppm的由磨损造成的金属杂质。模具和其它工具可被涂覆硬材料。在一实施例中,这种硬材料包括硬金属,如碳化钨。
在一实施例中,在步骤A)中,合适进料包括陶瓷填料和用于粘结填料的基质,也被称作粘结剂。陶瓷填料可(例如)基于钛酸钡(BaTiO
3
),其为一种钙钛矿型(ABO
3
)的陶瓷。
其可具有以下化学结构
Ba
1-x-y
M
x
D
y
Ti
1-a-b
N
a
Mn
b
O
3
其中参数可如下定义:
x = 0至0.5;
y = 0至0.01;
a = 0至0.01;以及
b = 0至0.01。
在这种结构中,M代表化合价二的阳离子,诸如Ca、Sr或Pb,D代表化合价三或四的供体,例如Y、La或稀土元素,以及N代表化合价为五或六的阳离子,例如Nb或Sb。
因此,可使用很多种陶瓷材料,其中,可关于所形成的烧结陶瓷所需的电特点来选择陶瓷的组成。
进料是可注射模制的,因为基质的熔点低于陶瓷填料的熔点。
根据一实施例,进料中的基质包括按质量计≤ 20%的含量,诸如按质量计≤ 12%的含量。这个含量降低了成本且缩短了在烧结之前或烧结期间移除基质时基质的燃尽时间。而且,进料中的少量基质材料有助于燃尽期间的尺寸变化且减小其烧结时进料的收缩。
根据一实施例,基质包括选自包含蜡、树脂、热塑性塑料和水溶性聚合物的一组中的材料。举例而言,低分子量聚乙烯、聚苯乙烯、石蜡、微晶蜡、若干共聚物和纤维素可包含于基质中。此外,基质可包括选自包含润滑剂、增塑剂和抗氧化剂的一组中的至少一种另外的组分。举例而言,邻苯二甲酸酯增塑剂或作为润滑剂的硬脂酸可包含于基质中。
进料中的金属杂质可包括Fe、Al、Ni、Cr和W。由于在进料制备中采用的工具的磨损,它们在进料中的含量,彼此组合或者每一种分别小于10 ppm。
在一实施例中,一种制备用于注射模制的进料的方法包括以下步骤:i)制备可通过烧结转变成PTC陶瓷的陶瓷填料,ii)将陶瓷填料与用于粘结填料的基质相混合,以及,iii)生产包括填料和基质的颗粒。
在整个过程中,使用具有较低磨损程度的工具,从而制备包含由所述磨损造成的小于10 ppm杂质的进料。因此,实现制备具有少量由磨损所造成的金属杂质的可注射模制的进料,而没有损失所模制的PCT陶瓷的所希望的电特点。
在步骤i),可通过混合合适原材料,煅烧它们和将它们研磨成粉末来制备陶瓷填料。煅烧可在大约1100℃的温度执行大约两个小时,在煅烧期间,形成具有结构Ba
1-x-y
M
x
D
y
Ti
1-a-b
N
a
Mn
b
O
3
的陶瓷材料,其中x = 0 至0.5,y = 0至0.01,a = 0至0.01且b = 0至0.01,其中M代表化合价二的阳离子,D是化合价为三或四的供体,且N是化合价为五或六的阳离子。这种陶瓷材料被研磨成粉末且经干燥以获得陶瓷填料。
合适原材料可包括BaCO
3
、TiO
2
、含Mn的溶液和含Y离子的溶液,例如MnSO
4
和YO
3/2
,以及选自SiO
2
、CaCO
3
、SrCO
3
和Pb
3
O
4
的组中的至少一种材料。从这些原材料可制备包括钙钛矿结构的陶瓷材料,具有诸如下面这样的组成:
。这种陶瓷材料的烧结主体具有122℃的温度T
C
和取决于烧结期间的条件的,在40至200Ωcm的电阻率范围。
根据本发明的实施方式,在100℃至200℃的温度执行步骤ii)。首先,陶瓷填料与基质在室温混合,之后,将这个冷混合物置于热混合器中,热混合器被加热到100℃至200℃,例如在120℃至170℃之间,例如160℃。在热混合器中在高温下将陶瓷填料和粘结填料的基质捏制成均匀一致。作为混合器或混合装置,可使用双辊碾轧机或者其它捏制/压碎装置。
双辊碾轧机可包括具有可调整压区的两个反转差速辊、且在陶瓷填料和基质经过压区时对陶瓷填料和基质上施加强剪切应力。另外,可使用单螺杆或双螺杆挤压机以及球磨机或叶片型混合器来制备包含基质和陶瓷填料的混合物。
在步骤iii),可将基质与陶瓷填料的混合物冷却至室温且减小成小块。混合物在其冷却时硬化且通过将其减小成小块,而形成进料材料的颗粒。
根据本发明方法的实施方式,在方法步骤i)、ii)和iii)中所用的工具包括硬材料的涂层。涂层可包括任何硬金属,诸如碳化钨(WC)。这种涂层减小工具接触陶瓷材料和基质的混合物时工具的磨损程度,且使得能制备具有少量由所述磨损造成的金属杂质的进料。金属杂质可为Fe,但也可为Al、Ni或Cr。当工具被涂覆诸如WC这样的硬涂层时,W杂质可被引入于进料内。但是,这些杂质具有小于50 ppm的含量。还发现在这个浓度,它们并不影响烧结PTC陶瓷的所希望的电特点。
可通过化学分析方法,例如电感耦合等离子体(IPC)光谱法,来检测进料的金属杂质。IPC光谱法是用于元素分析的方法,其可适用于大范围浓度的大部分元素。可对周期表的大部分元素进行分析。在分析之前,样品必须溶解。
在步骤B)期间,进料可在高压注射到模具内,例如在大约1000巴的压力的情况下。
在一实施例中,连续执行步骤C)中粘结剂的移除和步骤D)中模制主体的烧结。在此情况下,可通过热预烧结来移除粘结剂。如果粘结剂是水溶性的,其可至少部分地通过水溶剂化(water solvation)而移除。作为实例,通过水溶剂化,粘结剂含量可从进料质量的大约12%减小至大约6%。之后,可执行预烧结过程。
在另一实施例中,同时执行步骤C)中粘结剂的移除和步骤D)中模制主体的烧结。在此情况下,可通过烧结而移除粘结剂。
可在1250℃至1400℃的范围,例如,在1300℃至1350℃范围的温度下来执行步骤D)中的烧结过程。在步骤E)中,在从顶温度(1300℃至1350℃)至900℃的温度范围,冷却速率可在1K/min至30K/min之间,有利地在2 K/min与20 K/min之间。
烧结温度和冷却速率二者直接影响PTC效果的特点,如电阻率ρ
25
或ρ-T曲线的斜率。
附图说明
当结合附图考虑时,通过下文的具体描述,其它特点将会变得显而易见。
图1是作为温度T的函数,包括不同量的杂质的PTC陶瓷的电阻率的视图;
图2是用于加热流体的模制主体的实施例的视图;
图3是用于加热管部的模制主体的实施例的视图。
具体实施方式
在图1中,示出PTC陶瓷的ρ-T曲线,其中相对于以℃为单位的温度T绘制了以Ωcm为单位的电阻率ρ。
颗粒R是经制备用于干压、而无需在高剪切速率下进行捏制的参考颗粒。因此,由于制备方法没有任何工具磨损,颗粒R不包含或包含很少的金属杂质。对于低于特征温度T
C
= 122°C的温度,其具有大约30 Ωcm的电阻率、且在高于122℃的温度下示出ρ-T曲线的陡峭斜率。
对于注射模制主体F1、F2和F3,可从相应曲线看到陶瓷材料的金属杂质的量对电性质的影响。制备进料F1,用以利用钢制成的工具进行注射模制,该工具并未涂覆任何防磨损涂层。
进料F2和图F3被制备用以利用包括表面涂层的工具进行注射模制,表面涂层防止了导致金属杂质的磨损。在进料F3的制备中,所有工具被涂覆有硬金属WC,而在进料F2的制备中,工具仅部分地涂覆从而使得在某些方法步骤中进料已与工具的钢相接触。
因此,杂质的量从F1减小至F2且减小至F3。在F1和F2中,金属杂质量高于10 ppm,导致在从20℃至180℃的整个所测量温度范围,电阻率转移至更高值。
但当金属杂质量足够低时,如对于F3的情况,曲线接近参考曲线R。
陶瓷材料的ρ-T曲线的特征性特点在很大程度上取决于陶瓷材料的化学组成。在其它实施例中,陶瓷材料可包括与图1所用陶瓷不同的化学组成、且以T
C
、ρ25和ρ-T曲线斜率的不同值表征。可选择材料使得居里温度在-30℃至350℃的范围。在其它实施例中,居里温度甚至可以不在这个范围。
而且,不仅进料的化学组成,而且过程参数,如烧结温度和模制主体连续冷却的速率会影响电阻率的高度。
作为实例,图1中曲线F3的陶瓷材料在1300℃的温度烧结且随后迅速冷却。由于过程参数,ρ25为大约25 Ωcm。如果相同的材料在大约1350℃的温度烧结且随后以较缓慢速率冷却,则该电阻率升高至大约200 Ωcm的值。一般而言,可观察到,对于更高的烧结温度和更高的冷却速率,ρ-T曲线向上转移。
在实施例中,取决于陶瓷材料的化学组成,在低温和高冷却速率下烧结的主体的电阻率ρ25在3至10000Ωcm的范围。确切值取决于陶瓷材料的化学组成。在高烧结温度和低冷却速率,电阻率ρ25可在5至30000Ωcm的范围。ρ
c
在低烧结温度和快冷却速率下可在3至100Ωcm的范围,其对应于在高烧结温度和慢冷却速率下5至500Ωcm的范围。其它陶瓷材料的使用也可导致电阻率远低于或远高于此处给出的范围。
示出PTC效果的陶瓷主体可能模制成几乎所有类型的复杂形状和很多种尺寸。
特别地,可模制下面这样的主体:对于穿过主体的每个直线,其具有垂直于这个线的至少两个截面区域,不能通过沿着这个线平移而使它们彼此相容。这与其中沿着轴线的截面与模板截面匹配的其它几何形状不同。
本文所述的注射模制主体可包括弯曲表面区域。其也可包括平表面区域与弯曲表面区域的组合。举例而言,注射模制主体可具有锥形、金字塔形、圆柱形或立方形区域、以及任何其它形状、或不同形状的任何组合。在一实施例中,注射模制主体包括绕轴线扭转的基本形状。
此外,注射模制主体可具有所有类型的不规则形状。在一实施例中,注射模制主体对于穿过主体的每个直线具有垂直于这个线的至少两个截面区域,不能通过沿着这个线平移和绕这个线旋转而使该至少两个截面区域彼此相容。
这些不规则形状包括突起、凹口和狭缝。模制主体也可包括各种形状的通道或孔,例如,圆锥形孔。在一实施例中,模制主体包括了在外表面和内表面处(例如在现有通道内侧)的肋状物。突起、凹口或狭缝可以是用于将模制主体连接到另一主体或外壳的装置,例如连接螺纹或凸缘。
在一实施例中,注射模制主体包括与另一主体或外壳的表面区域的至少一部分互补的表面区域的至少一个部分。
表面区域的这种互补形状可由适应另一主体尺寸的尺寸构成。而且,可形成表面区域的曲率从而使得模制主体装配到同样弯曲的外壳内。作为其替代或者补充,模制主体可构成另一主体的外壳。
可形成突起和凹口从而使得它们装配于另一主体或外壳的凹口或突起内。在一实施例中,模制主体可紧密地附连到另一主体。在替代实施例中,腔可存在于模制主体与另一主体之间。利用在注射模制过程中直接形成的连接装置,可建立机械和热接触。
为了说明起见,图2和图3示出可用作加热元件的注射模制PTC陶瓷的两个实例。如上文所解释,注射模制主体的形状和尺寸决不限于此处所描绘的实施例。
图2示出注射模制主体1,其包括具有管形状的PTC陶瓷。流体可通过现有通道2且可由PTC陶瓷加热。为此目的,模制主体1在其内表面区域4和外表面区域5上具有电接触3。这些接触3可包括金属条带,包括Cr、Ni、Al、Ag或任何其它合适材料。
模制主体1的至少内表面4可额外地包括钝化层以防止流体与PTC陶瓷或内部电接触之间的相互作用,诸如化学反应。这种钝化层可(例如)包括低熔点玻璃或纳米合成物漆。纳米合成物漆可包括以下合成物中的一或多个:SiO
2
-聚丙烯酸酯合成物,SiO
2
-聚醚合成物,SiO
2
-硅酮合成物。
所展示的管在中部部段6向外凸出。这意味着中部部段6的管的内径和外径大于端部部段7处的直径。此外,若干狭缝8存在于端部部段7处。这些狭缝8可用于将模制主体1固定到具有互补突起的其它管部段(此处未图示)。选择模制主体1的尺寸和形状从而使得其可容易地适应另外的管部段。
可在注射模制过程期间直接形成狭缝8且而不是之后引入狭缝8。由于狭缝8和在中部部段6的凸出形状,垂直于流动方向的截面在管的中部部段6不同于管的端部部段7。因此,在挤压过程中可能难以形成这种主体。
在一实施例中,图2所示的模制主体具有20 mm的外管直径,流体流动方向上的30 mm的长度和3 mm的壁厚度。在其它实施例中,这些主体可具有更小或更大尺寸,例如在数米的范围。
图3是注射模制主体1的实施例的视图,其可用于加热管部段(未图示),流体可通过这个管部段。其包括内部半径与管部段的尺寸互补的弯曲表面2。而且,其包括两个平区域3和4。这些区域3、4可用于将元件连接到另一加热元件(未图示)从而使得管部段由加热元件所围封。而且,两个区域都可包括电接触。
在一方面,PCT陶瓷元件是温度测量装置的部分。由于其电阻率作为温度函数的特征运行,注射模制主体可为温度传感器元件或其部分。PTC陶瓷可具有类似于图2和图3所示的加热元件的形状。其也可具有完全不同的形状。
在一实施例中,PTC陶瓷元件是温度控制装置的部分。注射模制主体可为自调节式加热元件的部分。此处,可利用通过PTC元件的电流流动导致温度升高。由于温度升高,PTC陶瓷的电阻率升高。当在恒定电压下操作时,电阻率的增加导致电流流动的减小。因此,对陶瓷的加热再次减小。
在一实施例中,PTC陶瓷可用作加热元件。此处,可由模制主体来优化热效率,该模制主体具有与加热装置中另一元件互补的形状和整合到主体中的连接装置。
在另一实施例中,本文所述的注射模制主体可以是保护其它元件防止温度超负荷的一种电路的元件。在另一方面,其可保护电路中的其它元件防止电流或电压超负荷。注射模制的PTC陶瓷也可为电路中接通/断开开关的部分。
其它实施方式在所附权利要求书的范围内。不同实施方式的元件可组合以形成本文未具体描述的实施方式。
Claims (22)
1.一种注射模制主体,其包括:
具有正温度系数的陶瓷材料,其包含小于10 ppm的金属杂质,其中所述金属杂质选自Fe、Ni、Al和Cr,并且其中所述注射模制主体包括至少一个突起、凹口或狭缝,其中所述至少一个突起、凹口或狭缝是用于将所述模制主体连接到另一主体或外壳的装置。
2.根据权利要求1所述的注射模制主体,其具有在-30℃至340℃之间的居里温度。
3.根据权利要求1所述的注射模制主体,其在25℃具有在3 Ωcm至30000 Ωcm之间的电阻率。
4.根据权利要求1所述的注射模制主体,其在注射模制过程中由进料形成,所述进料包括具有以下结构的材料:
其中
Ba1-x-yMxDyTi1-a-bNaMnbO3
其中参数为:
x = 0至0.5;
y = 0至0.01;
a = 0至0.01;以及
b = 0至0.01,
其中,M包括化合价二的阳离子,D包括化合价三或四的供体以及N包括化合价为五或六的阳离子。
5.根据权利要求1所述的注射模制主体,其中,对于穿过所述主体的直线,所述注射模制主体的垂直于所述线的至少两个截面区域不能通过沿着所述线平移而彼此相容。
6.根据权利要求1所述的注射模制主体,其中,对于穿过所述主体的直线,所述注射模制主体的垂直于所述线的至少两个截面区域不能通过沿着所述线平移和旋转而彼此相容。
7.根据权利要求1所述的注射模制主体,其还包括至少一个弯曲表面区域。
8.根据权利要求1所述的注射模制主体,其中所述注射模制主体的表面区域的至少一部分与另一主体或外壳的表面区域的至少一部分互补。
9.根据权利要求1所述的注射模制主体,其还包括连接到另一主体或外壳的装置。
10.根据权利要求1所述的注射模制主体,其还包括至少一个电接触。
11.一种温度测量装置,其包括:
根据权利要求1所述的注射模制主体;
其中所述注射模制主体是温度传感器元件的部分。
12.一种温度控制装置,其包括:
根据权利要求1所述的注射模制主体;
其中所述注射模制主体调节电流。
13.一种用于防止电流或电压超负荷的电路中的装置,所述装置包括:
根据权利要求1所述的注射模制主体。
14.一种注射模制根据权利要求1所述的主体的方法,包括:
A)提供用于注射模制的进料,其包含小于10 ppm的金属杂质;
B)将所述进料注射至模具内;
C)移除粘结剂;
D)烧结所得到的模制主体;以及
E)冷却所述模制主体;
其中在所述方法中使用的与所述陶瓷材料接触的工具具有一定磨损率,从而使得所得模制主体包括小于10ppm的由磨损造成的金属杂质。
15.根据权利要求14所述的方法,其中所述工具被涂覆硬材料。
16.根据权利要求15所述的方法,其中所述硬材料包括碳化钨。
17.根据权利要求14所述的方法,其中C)和D)连续执行,在C)中,通过热预烧结或水溶剂化来移除所述粘结剂。
18.根据权利要求14所述的方法,其中C)和D)同时进行,且在C)中,通过烧结来移除所述粘结剂。
19.根据权利要求14所述的方法,其中,在D)中,在1250℃至1400℃范围的温度执行烧结。
20.根据权利要求19所述的方法,其中所述温度在1300℃至1350℃的范围。
21.根据权利要求14所述的方法,其中在E)中,冷却速率在1K/min至30 K/min之间。
22.根据权利要求21所述的方法,其中在E)中,冷却速率在2K/min与20K/min之间。
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DE102012110822A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperatursensorsystem und Verfahren zur Herstellung eines Temperatursensorsystems |
DE102012110858A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperatursensorsystem und Verfahren zur Herstellung eines Temperatursensorsystems |
DE102012110845A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperaturfühler und Verfahren zur Herstellung eines Temperaturfühlers |
DE102012110849A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperaturfühler und Verfahren zur Herstellung eines Temperaturfühlers |
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TWI557756B (zh) | 2014-09-29 | 2016-11-11 | 聚鼎科技股份有限公司 | 正溫度係數材料以及包含該正溫度係數材料之過電流保護元件 |
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US20090148657A1 (en) | 2009-06-11 |
RU2010127360A (ru) | 2012-01-10 |
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KR101546113B1 (ko) | 2015-08-20 |
EP2244989A1 (en) | 2010-11-03 |
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