JP2011506127A - 射出成形されたptcセラミック - Google Patents
射出成形されたptcセラミック Download PDFInfo
- Publication number
- JP2011506127A JP2011506127A JP2010536440A JP2010536440A JP2011506127A JP 2011506127 A JP2011506127 A JP 2011506127A JP 2010536440 A JP2010536440 A JP 2010536440A JP 2010536440 A JP2010536440 A JP 2010536440A JP 2011506127 A JP2011506127 A JP 2011506127A
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- Prior art keywords
- injection molded
- molded body
- injection
- temperature
- straight line
- Prior art date
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- 239000007924 injection Substances 0.000 title claims abstract description 41
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- 239000012535 impurity Substances 0.000 claims abstract description 24
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- 239000011230 binding agent Substances 0.000 claims abstract description 13
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- 238000000034 method Methods 0.000 claims description 27
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
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- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
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- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
【選択図】図3
Description
A)含まれる金属不純物が10ppm未満である、射出成形のための原料を供給する。
B)原料を型へと射出する。
C)結合材を取り除く。
D)成形体を焼結する。
E)成形体を冷却する。
Ba1−x−yMxDyTi1−a−bNaMnbO3
を有することができ、ここで、パラメータは以下のように定義されうる。
x=0から0.5、
y=0から0.01、
a=0から0.01、
b=0から0.01。
Claims (25)
- 含まれる金属不純物が10ppm未満であり、正の温度係数を有するセラミック材料を含む、
射出成形体。 - −30℃から340℃の間のキュリー温度を有する、請求項1に記載の射出成形体。
- 25℃の温度で3Ωcmから30000Ωcmの範囲の抵抗率を有する、請求項1に記載の射出成形体。
- 射出成形処理において原料からつくられ、前記原料が以下の組成、すなわち:
Ba1−x−yMxDyTi1−a−bNaMnbO3
ここで、
x=0から0.5、
y=0から0.01、
a=0から0.01、および
b=0から0.01であり、
Mは原子価2の陽イオンであり、Dは原子価3または4のドナーであり、Nは原子価5または6の陽イオンである、
組成からなる材料を含む、請求項1に記載の射出成形体。 - 前記射出成形体を貫く直線に対して、前記射出成形体の、前記直線に垂直な少なくとも2つの断面領域が、前記直線に沿った並行移動によって互いに重なり合うことができない、請求項1に記載の射出成形体。
- 前記射出成形体を貫く直線に対して、前記射出成形体の、前記直線に垂直な少なくとも2つの断面領域が、前記直線に沿った並行移動および前記直線のまわりの回転によって互いに重なり合うことができない、請求項1に記載の射出成形体。
- 少なくとも1つの湾曲した表面領域をさらに含む、請求項1に記載の射出成形体。
- 少なくとも1つの突起をさらに含む、請求項1に記載の射出成形体。
- 少なくとも1つのくぼみまたはスリットをさらに含む、請求項1に記載の射出成形体。
- 少なくとも1つの穴または溝をさらに含む、請求項1に記載の射出成形体。
- 前記射出成形体の表面領域の少なくとも一部が、さらなる体またはハウジングの表面領域の少なくとも一部と相補的である、請求項1に記載の射出成形体。
- さらなる体またはハウジングに接続するための手段をさらに備える、請求項1に記載の射出成形体。
- 少なくとも1つの電気的接点をさらに備える、請求項1に記載の射出成形体。
- 請求項1に記載の射出成形体を備え、
前記射出成形体が温度センサ要素の部分である、
温度測定装置。 - 請求項1に記載の射出成形体を備え、
前記射出成形体が電流を制御する、
温度制御装置。 - 過負荷電流または過負荷電圧に対する保護のための電気回路内の装置であって、
請求項1に記載の射出成形体を備える、装置。 - A)含まれる金属不純物が10ppm未満である、射出成形のための原料を供給することと、
B)前記原料を型に射出することと、
C)結合材を取り除くことと、
D)得られた成形体を焼結することと、
E)前記成形体を冷却することと、からなる方法であって、
前記方法の間に用いられる、セラミック材料と接触する工具が有する摩耗率が、前記得られた成形体に含まれる摩耗で生じた金属不純物が10ppm未満となるようなものである、
請求項1に記載の射出成形体を射出成形する方法。 - 前記工具が硬い材料で被覆されている、請求項17に記載の方法。
- 前記硬い材料が炭化タングステンである、請求項18に記載の方法。
- C)およびD)が連続して実行され、C)において、前記結合材が熱による予備焼結または水和によって取り除かれる、請求項17に記載の方法。
- C)およびD)が同時に実行され、C)において、前記結合材が焼結によって取り除かれる、請求項17に記載の方法。
- D)において、焼結が1250℃から1400℃の範囲の温度で行われる、請求項17に記載の方法。
- 前記温度が1300℃から1350℃の範囲である、請求項22に記載の方法。
- E)において、冷却速度が1K/分から30K/分の間である、請求項17に記載の方法。
- E)において、前記冷却速度が2K/分から20K/分の間である、請求項24に記載の方法。
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US11/950,724 US20090148657A1 (en) | 2007-12-05 | 2007-12-05 | Injection Molded PTC-Ceramics |
US11/950,724 | 2007-12-05 | ||
PCT/EP2008/066720 WO2009071588A1 (en) | 2007-12-05 | 2008-12-03 | Injection molded ptc-ceramics |
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DE102012110822A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperatursensorsystem und Verfahren zur Herstellung eines Temperatursensorsystems |
DE102012110858A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperatursensorsystem und Verfahren zur Herstellung eines Temperatursensorsystems |
DE102012110845A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperaturfühler und Verfahren zur Herstellung eines Temperaturfühlers |
DE102012110849A1 (de) * | 2012-11-12 | 2014-05-15 | Epcos Ag | Temperaturfühler und Verfahren zur Herstellung eines Temperaturfühlers |
TWI550655B (zh) * | 2012-12-24 | 2016-09-21 | 財團法人工業技術研究院 | 鋰離子電池及其電極結構 |
TWI557756B (zh) * | 2014-09-29 | 2016-11-11 | 聚鼎科技股份有限公司 | 正溫度係數材料以及包含該正溫度係數材料之過電流保護元件 |
DE102018121902A1 (de) * | 2018-09-07 | 2020-03-12 | Isabellenhütte Heusler Gmbh & Co. Kg | Herstellungsverfahren für ein elektrisches Widerstandselement und entsprechendes Widerstandselement |
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CN101888985A (zh) | 2010-11-17 |
BRPI0821074B1 (pt) | 2019-02-12 |
CN104744031A (zh) | 2015-07-01 |
KR101546113B1 (ko) | 2015-08-20 |
WO2009071588A1 (en) | 2009-06-11 |
BRPI0821074A2 (pt) | 2017-05-23 |
EP2244989A1 (en) | 2010-11-03 |
EP2244989B9 (en) | 2017-12-13 |
KR20100098678A (ko) | 2010-09-08 |
US20090148657A1 (en) | 2009-06-11 |
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