CN104637927A - 一种基于柔性基板的三维封装结构及工艺方法 - Google Patents
一种基于柔性基板的三维封装结构及工艺方法 Download PDFInfo
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Abstract
本发明主要涉及一种基于柔性基板的三维封装结构及其针对本发明的制作方法,该方法主要包括:提供一种可弯折连续柔性基板,基板形状由芯片的大小,数量,形状确定,并在基板表面布线以实现层间电连接;将被封装芯片焊接到可弯折连续柔性基板上;采用底填胶对芯片与基板间的缝隙进行填充;将基板向中心弯折,使周边的各芯片分别于与位于中心的芯片平行重合,并用粘合胶对两层平行芯片进行粘合。与现有发明相比,本发明采用柔性基板作为封装衬底,可以更好的满足现在封装中高密度高集成的要求,实现封装的小型化、兼容性和高性能的芯片封装。
Description
技术领域
本发明专利主要涉及一种基于柔性基板的三维封装结构及其针对本发明专利的制作方法。
技术背景
随着人们对电子产品的要求向小型化、多功能、环保型等方向的发展,未来电子系统将需要满足如下几个方面日益提出的要求:体积小、重量轻、高频和高速运行、低功耗、灵敏、多功能以及低成本。而三维封装正是满足这几个方面要求的一个极具吸引力的途径,其具有减小体积和增加衬底材料利用率的优点。但是传统的三维封装多采用堆叠技术,该结构直接将多个裸芯片或者衬底通过键合的方式堆叠起来,实现在三维方向上的金属互联结构,从而实现一个系统或者某个功能在三维结构上的集成,大大减小了互联距离,提高了传输速度。但此方法通常较复杂,存在很多困难,对产品的成品率和可靠性造成极大的影响。而且此类结构通常采用通孔实现层间互连,工艺复杂,实现难度大。
发明内容
针对上述问题,本发明提出了一种基于柔性基板的三维封装结构及其针对本发明专利的制作方法。
一种基于柔性基板的三维封装结构,该结构包括:
可弯折连续柔性基板;
焊接在上述可弯折连续柔性基板上多个芯片;
填充弯折连续基板内部的灌封胶;
实现与外部基板电连接的触点。
一种基于柔性基板的三维封装结构的制作方法,该方法包以下步骤:
a)提供一种可弯折连续柔性基板;
b)将被封装的多个芯片焊接到可弯折连续柔性基板上;
c)将柔性基板弯折,使焊接在连续柔性基板上的芯片重合,并用粘合胶对重合的芯片进行粘合;
采用灌封胶对柔性基板封装内部进行填充。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所做的详细描述,本发明的其他特征,目的和优点将会变得更加明显。
图1为根据本发明的实施例的三维封装结构制造方法的流程图;
图2为完成芯片贴装后的连续柔性基板俯视图和剖面图;
图3为完成底部填充后的连续柔性基板俯视图和剖面图;
图4为弯折后的连续柔性基板俯视图和剖面图;
图5为完成模塑后的封装剖面图;
图6为植球后的封装剖面图;
图7至图11分别为另一种折叠方法下的各步骤工艺的示意图;
图12为多个芯片时的一种封装基板形状方案。
具体实施方式
下面详细描述本发明的实施例。
所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能解释为对本发明的限制。下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。为了简化本发明的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本发明。此外,本发明可以在不同例子中重复参考数字和/或字母。这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施例和/或设置之间的关系。此外,本发明提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的可应用于性和/或其他材料的使用。
根据本发明的一个方面,提供了一种基于柔性基板的三维封装结构的制作方法。下面,将结合图2至图7通过本发明的一个实施例一对形成该结构的方法进行具体描述。如图1所示,本发明所提供的制造方法包括以下步骤:
在步骤S101中,提供可弯折连续柔性基板104,并在所述可弯折连续柔性基板104上采用表面布线技术以实现层间电连接。根据所需封装的芯片大小,形状,数量等因素确定基板的形状,通常将较大的芯片焊接在基板中央,以便于后续工艺中弯折,模塑等步骤的实现。在本实施例中,由于芯片101面积大于芯片102和芯片103的面积之和,考虑到封装的整体稳固性,采用双层层叠方式完成封装。因此,考虑柔性基板104的形状时,设计在柔性基板104中部贴合芯片101,两端贴合芯片102和芯片103,并且芯片101和芯片102关于芯片101对称。同时,应根据折叠所需的空间长度,在芯片101和芯片102以及芯片103之间预留出合适的长度。
在步骤S102中,通过BGA球105将芯片101,芯片102和芯片103焊接到上述可弯折连续柔性基板104上,所述芯片可以为单个的芯片,也可以为叠层的芯片,并且也可以为包含有TSV的转接板或TSV集成的3D芯片。
上述芯片可以通过封装工艺实现芯片与基板之间的电连接。该电连接可以通过芯片倒装的焊球方式进行互连实现,也可以通过引线键合的压焊方式实现。完成贴装后的结构如图2所示。
在步骤S103中,使用底填胶106对上述各芯片与可弯折连续柔性基板104之间的缝隙进行填充,对焊接的芯片进行加固,可以有效增加芯片可靠性。所述底填胶106一般为单液高温固化环氧树脂或其他类似胶体。如图3所示,涂胶时,在芯片一侧施加胶体,由于毛细管现象,胶体会沿着芯片与基板之间的缝隙流动,逐渐填满缝隙。完成填充后,底填胶106应在侧面完全包裹住芯片,控制胶量,使外溢胶层达到芯片高度的三分之二为最佳。
在步骤S104中,对基板进行弯折,实现三维封装结构。具体的,将基板焊接芯片102和芯片103的两端向基板中心折叠,使芯片102和芯片103分别与芯片101平行贴合,如图4所示,并采用粘合胶108对芯片的平行贴合面进行粘合,初步形成三维封装结构。
步骤S105为模塑过程,如图5所示,即使用灌封胶109对在步骤S103中形成的三维结构进行内部填充,提高内部元件、线路之间的绝缘,强化该封装结构的整体性。所述灌封胶109可以是环氧灌封胶、高导热灌封胶、有机硅灌封胶、聚氨酯灌封胶、柔性树脂或者热溶灌封胶沥青石蜡等。
在填充灌封胶109的过程中,发明人发现如果上下叠加的柔性基板宽度相同则容易导致灌封胶109外溢,污染其他连接结构。因此,本发明采用叠加后逐步缩小柔性基板的宽度解决灌封胶109外溢的问题。例如,图5、9和10右侧的截面图所示,底下的基板宽度最大,上面叠加的基板宽度依次减小,这时填充灌封胶109时,由于表面张力的作用,会在基板的侧面形成一个倾斜面,类似无顶的金字塔形状,有利于防止灌封胶109的外溢。
具体的,在本制作工艺方法中,通过类似于底填料的方法在形成的结构中通过毛细作用将灌封胶完全填充到本发明中的柔性基板封装中,在填充过程中可以避免对柔性基板中其他的结构产生污染,更好进行其他的工艺步骤,并且通过该制作工艺实现了上面所描述的柔性基板的封装结构。
最后,对填充灌封胶109之后的三维封装结构进行植球焊接,以实现本封装与外部基板之间的电连接,如图6所示。所述焊球可以为多种包含有有铅或无铅的焊球,同样也可以包含有其他的可以实现封装外引出的其他的电连接形式,例如封装中QFN形式的焊盘等。
在本发明中,针对不同的芯片形状、大小、和数量,可弯折连续柔性基板的形状和面积可相应灵活发生改变。对此,本发明提供了一个实施例二来说明这一特征。
下面,将结合图7至图11对形成该结构的方法进行具体描述。在实施例二中,具体工艺流程与实施例一基本相同,如图1所示,区别在于,根据所封装芯片的数量和形状不同,在设计可弯折连续柔性基板的形状时灵活改变基板形状、长度以及弯折方法,具体的:
首先,提供可弯折连续柔性基板204,并在所述可弯折连续柔性基板204上采用表面布线技术以实现层间电连接。本例中三块芯片面积相差不大,考虑到封装整体的稳定性,在弯折时应采用三层叠方式,即三块芯片顺序层叠。因此,仍在所采用的柔性基板204中部贴合面积较大的芯片201,芯片201和203分别位于基板两端。由于左右两端先后弯折,后弯折的芯片在空间上需要更多的长度,因此,芯片203距离芯片201的距离应略大于芯片202,如图8所示。
其次,通过BGA球205将所需被封装芯片焊接到上述可弯折连续柔性基板204上,具体为芯片201,芯片202和芯片203。所述待封装芯片可以为单个的芯片,也可以为叠层的芯片,并且也可以为包含有TSV的转接板或TSV集成的3D芯片。
上述芯片可以通过封装工艺实现芯片与基板之间的电连接。该电连接可以通过芯片倒装的焊球方式进行互连实现,也可以通过引线键合的压焊方式实现。完成贴装后的结构如图8所示。
再其次,使用底填胶206对上述各芯片与可弯折连续柔性基板204之间的缝隙进行填充,对焊接的芯片进行加固,可以有效增加芯片可靠性。所述底填胶206一般为单液高温固化环氧树脂或其他类似胶体。如图9所示,涂胶时,在芯片一侧施加胶体,由于毛细管现象,胶体会沿着芯片与基板之间的缝隙流动,逐渐填满缝隙。完成填充后,底填胶206应在侧面完全包裹住芯片,控制胶量,使外溢胶层达到芯片高度的三分之二为最佳。
然后对基板进行弯折,实现三维封装结构。具体的,根据上述确定的基板形状,先将焊接芯片202的一端向基板中心折叠,使芯片202与芯片201平行贴合,并采用粘合胶208对其平行贴合面进行粘合;然后将焊接芯片203的一端向基板中心折叠,使芯片203与贴合芯片202的一端基板外侧平行贴合,并采用粘合胶208对其平行贴合面进行粘合,初步形成三维封装结构。
接下来为模塑过程,如图10所示,即使用灌封胶209对在步骤S103中形成的三维结构进行内部填充,提高内部元件、线路之间的绝缘,强化该封装结构的整体性。所述灌封胶209可以是环氧灌封胶、高导热灌封胶、有机硅灌封胶、聚氨酯灌封胶、柔性树脂或者热溶灌封胶沥青石蜡等。
具体的,在本制作工艺方法中,通过类似于底填料的方法在形成的结构中通过毛细作用将灌封胶完全填充到本发明中的柔性基板封装中,在填充过程中可以避免对柔性基板中其他的结构产生污染,更好进行其他的工艺步骤,并且通过该制作工艺实现了上面所描述的柔性基板的封装结构。
最后,对填充灌封胶209之后的三维封装结构进行植球焊接,以实现本封装与外部基板之间的电连接,如图11所示。所述焊球可以为多种包含有有铅或无铅的焊球,同样也可以包含有其他的可以实现封装外引出的其他的电连接形式,例如封装中QFN形式的焊盘等。
类似的,对于多个待封装芯片,可以根据实际情况设计可弯折连续柔性基板的形状,例如,对于5块芯片的柔性基板三维封装,可采用图12所示的形状来完成封装。
上文以三块或四块芯片的三维封装为例进行描述,实际上也可以容易地实现两块或者四块以上芯片的三维封装。
例如,所述柔性基板具有一个中心和由该中心向外延伸的一个或多个条形延伸基板,所述柔性基板中心和各条形延伸基板末端都焊接有芯片。所述柔性基板中心的宽度较宽,各条形延伸基板末端根据其与柔性基板中心的叠加次序,其宽度依次减小,使得叠加后的三维封装结构的截面形成无顶金字塔状逐渐减小宽度的结构,有利于灌封胶的填充,避免灌封胶溢出污染其他部分。各条形延伸基板向中心弯折后,所述延伸基板上的芯片与柔性基板中心的芯片相重合。这样的延伸基板相对于所述中心呈辐射状,可以满足多个芯片的三维封装要求。
与现有技术相比,本发明最大的特点在于采用可弯折连续柔性基板作为封装衬底,该柔性基板具有以下优点:由于柔性基板的制作工艺的优势,可以在柔性基板中制作窄节距细线条,可以更好的满足现在封装中高密度高集成的要求;柔性基板相对刚性基板最大的优势在于其柔性,可以进行基板的弯折,从而实现其封装的小型化,而且对于柔性基板中的工艺方法基本上与一般的封装工艺相兼容;另外柔性基板对于封装中的热管理性能更加优越于刚性基板,能够实现高性能的芯片封装。
虽然关于示例实施例及其优点已经详细说明,应当理解在不脱离本发明的精神和所附权利要求限定的保护范围的情况下,可以对这些实施例进行各种变化、替换和修改。对于其他例子,本领域的普通技术人员应当容易理解在保持本发明保护范围内的同时,工艺步骤的次序可以变化。
此外,本发明的应用范围不局限于说明书中描述的特定实施例的工艺、机构、制造、物质组成、手段、方法及步骤。从本发明的公开内容,作为本领域的普通技术人员将容易地理解,对于目前已存在或者以后即将开发出的工艺、机构、制造、物质组成、手段、方法或步骤,其中它们执行与本发明描述的对应实施例大体相同的功能或者获得大体相同的结果,依照本发明可以对它们进行应用。因此,本发明所附权利要求旨在将这些工艺、机构、制造、物质组成、手段、方法或步骤包含在其保护范围内。
Claims (16)
1.一种基于柔性基板的三维封装结构,该结构包括:
可弯折连续柔性基板(104);
焊接在上述可弯折连续柔性基板上多个芯片(101、102、103);填充弯折连续基板内部的灌封胶(109);
实现与外部基板电连接的触点(110)。
2.根据权利要求1所述的三维封装结构,其特征在于,所述可弯折连续柔性基板(104)表面布线以实现所述多个芯片之间的电连接。
3.根据权利要求1或2所述的三维封装结构,,其特征在于,根据待封装芯片的形状、大小和数量确定柔性基板(104)的形状和长度,以及芯片在柔性基板(104)上的位置。
4.根据权利要求1至4中的任何一项所述的三维封装结构,其特征在于,通过弯折、折叠所述柔性基板(104)实现多层的三维封装结构。
5.根据权利要求1所述的三维封装结构,其特征在于,所述芯片包括单一芯片、叠层的芯片、包含有TSV的转接板或TSV集成的3D芯片。
6.根据权利要求1所述的三维封装结构,所述柔性基板具有一个中心和由该中心向外延伸的一个或多个条形延伸基板,所述柔性基板中心和各条形延伸基板末端都焊接有芯片。
7.根据权利要求6所述的三维封装结构,弯折所述柔性基板后,所述延伸基板上的芯片与柔性基板中心的芯片相重合。
8.根据权利要求1至6中的任何一项所述的三维封装结构,其中所述可弯折连续柔性基板弯折后重叠的基板的宽度依次递减。
9.一种基于柔性基板的三维封装结构的制作方法,该方法包以下步骤:
a)提供一种可弯折连续柔性基板(104);
b)将被封装的多个芯片焊接到可弯折连续柔性基板(104)上;
c)将柔性基板(104)弯折,使焊接在连续柔性基板(104)上的芯片重合,并用粘合(108)胶对重合的芯片进行粘合;以及
d)采用灌封胶(109)对柔性基板封装(107)内部进行填充。
10.根据权利要求9所述的三维封装方法,其特征在于,所述可弯折连续柔性基板(104)表面布线以实现所述多个芯片之间的电连接。
11.根据权利要求9所述的三维封装方法,其特征在于,根据待封装芯片的形状、大小和数量确定柔性基板(104)的形状和长度,以及芯片在柔性基板(104)上的位置。
12.根据权利要求9所述的三维封装方法,其特征在于,所述步骤b)包括采用底填胶对芯片与基板(104)间的缝隙进行填充。
13.根据权利要求9或12所述的三维封装方法,其特征在于,所述步骤b)或步骤d)通过毛细作用将灌封胶(109)或者底填胶完全填充到柔性基板封装(107)中。
14.根据权利要求9所述的三维封装方法,所述柔性基板具有一个中心和由该中心向外延伸的一个或多个条形延伸基板,所述柔性基板中心和各条形延伸基板末端都焊接有芯片。
15.根据权利要求9所述的三维封装方法,弯折所述柔性基板后,所述延伸基板上的芯片与柔性基板中心的芯片相重合。
16.根据权利要求9至15中的任何一项所述的三维封装方法,其中所述可弯折连续柔性基板弯折后重叠的基板的宽度依次递减。
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WO2017024674A1 (zh) * | 2015-08-10 | 2017-02-16 | 成都锐华光电技术有限责任公司 | 基于柔性基板的三维芯片堆叠封装结构及封装方法 |
CN107204333A (zh) * | 2017-05-23 | 2017-09-26 | 华进半导体封装先导技术研发中心有限公司 | 一种柔性基板封装结构及其封装方法 |
CN108847442A (zh) * | 2018-06-30 | 2018-11-20 | 山东昊润自动化技术有限公司 | 一种压力芯片封装方法 |
CN112713164A (zh) * | 2021-01-05 | 2021-04-27 | 电子科技大学 | 一种三维集成电路及其制造方法 |
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CN104637927B (zh) * | 2013-11-12 | 2019-01-22 | 中国科学院微电子研究所 | 一种基于柔性基板的三维封装结构及工艺方法 |
CN106783653B (zh) * | 2016-11-24 | 2019-06-07 | 天津津航计算技术研究所 | 基于多芯片堆叠工艺的芯片内部温度监控设备 |
JPWO2018212035A1 (ja) * | 2017-05-15 | 2020-03-19 | パイオニア株式会社 | 発光装置 |
KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
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US20160293573A1 (en) | 2016-10-06 |
CN104637927B (zh) | 2019-01-22 |
WO2015070599A1 (zh) | 2015-05-21 |
US9997493B2 (en) | 2018-06-12 |
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