CN104520988B - 覆晶堆叠的方法 - Google Patents

覆晶堆叠的方法 Download PDF

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CN104520988B
CN104520988B CN201380036940.XA CN201380036940A CN104520988B CN 104520988 B CN104520988 B CN 104520988B CN 201380036940 A CN201380036940 A CN 201380036940A CN 104520988 B CN104520988 B CN 104520988B
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CN104520988A (zh
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权云星
苏芮戌·瑞玛林嘉
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Xilinx Inc
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Abstract

一种覆晶堆叠的方法，其包含：形成(201)一空腔晶圆(301)，其包括多个空腔(303)以及一对转角导轨(305)；放置(203)一直通硅穿孔(TSV)中介片在该空腔晶圆上，该TSV中介片具有被耦合至该TSV中介片的一表面的多个焊接凸块(107)，使得该焊接凸块位于该多个空腔中，而该TSV中介片位于该对转角导轨之间；放置(205)一集成电路(IC)晶粒(109)在该TSV中介片的另一表面上，使得该IC晶粒、该TSV中介片、以及该焊接凸块会形成一已堆叠的中介片单元(113)；从该空腔晶圆处移除(207)该已堆叠的中介片单元；以及将该已堆叠的中介片单元的该焊接凸块粘结(209)至一有机基板(101)，使得该已堆叠的中介片单元与该有机基板会形成覆晶(300)。

Description

覆晶堆叠的方法
技术领域
本申请案大体上和覆晶堆叠有关，且明确地说，是关于堆叠包含直通硅穿孔(Through Silicon Via，TSV)中介片、集成电路(Integrated Circuit，IC)晶粒、以及有机基板的覆晶的方法。
背景技术
用以实施覆晶堆叠的现有技术方式涉及放置一直通硅穿孔(TSV)中介片在一有机基板上并且接着堆叠一集成电路在该TSV中介片上，以便形成覆晶。此等用于覆晶堆叠的现有技术方法的特征为特殊的粘结方法以及所涉及的制程参数。覆晶堆叠的组装合格率明显受到现有技术覆晶堆叠期间所发生的TSV中介片翘曲的影响。现有技术的覆晶堆叠方式会造成大量的TSV中介片翘曲，其最终会影响IC性能以及组装合格率。
目前正在研究用以减轻TSV中介片翘曲的效应的其中一种方式是将集成电路晶粒热压缩粘结至TSV中介片。然而，热压缩粘结却会导致数项副作用，例如，助熔剂残留以及不均匀的热轮廓，它们接着会导致不良的焊接效果。
发明内容
本发明提供一种覆晶堆叠的方法，其包含：形成一空腔晶圆，其包括多个空腔以及一对转角导轨；将一直通硅穿孔(TSV)中介片放置在该空腔晶圆上，该TSV中介片具有被耦合至该TSV中介片一表面的多个焊接凸块，使得该焊接凸块位于该多个空腔中，而该TSV中介片位于该对转角导轨之间；将一集成电路(IC)晶粒放置在该TSV中介片的另一表面上，使得该IC晶粒、该TSV中介片、以及该焊接凸块会形成一已堆叠的中介片单元；从该空腔晶圆处移除该已堆叠的中介片单元；以及将该已堆叠的中介片单元的该焊接凸块粘结至一有机基板，使得该已堆叠的中介片单元与该有机基板形成覆晶。
该多个空腔从该空腔晶圆的顶端表面延伸至该空腔晶圆的底部表面。
该方法进一步包含在该空腔晶圆的底部表面施加真空，用以将具有多个焊接凸块的TSV中介片固持在相对于该空腔晶圆的正确地方。
该方法进一步包含：在包含该多个空腔及该对转角导轨的空腔晶圆的一表面上形成一层可移除的粘着剂；以及将具有多个焊接凸块的TSV中介片放置在该层可移除的粘着剂上，使得该层可移除的粘着剂将该TSV中介片固持在相对于该空腔晶圆的正确地方。
该方法进一步包含实施回焊接合，用以将该集成电路晶粒附接至该TSV中介片的另一表面。
该方法进一步包含在实施回焊接合之后实施底层填充。
移除该已堆叠的中介片单元的动作包括实施化学溶解。
将该已堆叠的中介片单元的该焊接凸块粘结至该有机基板的动作包括实施回焊接合。
该方法进一步包含熔化和该集成电路晶粒相关联的多个IC焊接凸块。
该多个空腔通过下面方式所形成：图样化晶圆上的光阻；对该具有已图样化光阻的晶圆实施反应离子干式蚀刻；以及利用有机溶剂移除该光阻。
该方法进一步包含放置另一个集成电路(IC)晶粒在该TSV中介片上。
本发明提供一种覆晶堆叠的方法，其包含：在一晶圆的一表面上形成一支撑层；将一直通硅穿孔(TSV)中介片放置在该支撑层上，该TSV中介片具有被耦合至该TSV中介片一表面的多个焊接凸块，使得该焊接凸块至少部分位在该支撑层中，而该TSV中介片的至少一部分位于该支撑层的一表面之上；将一集成电路(IC)晶粒放置在该TSV中介片的另一表面上，使得该IC晶粒、该TSV中介片、以及该焊接凸块会形成一已堆叠的中介片单元；从该支撑层处移除该已堆叠的中介片单元；以及将该已堆叠的中介片单元的该焊接凸块粘结至一有机基板，使得该已堆叠的中介片单元与该有机基板形成覆晶。
该支撑层包括一粘着层与一脱除层。
将具有多个焊接凸块的TSV中介片放置在该支撑层的动作包括将该焊接凸块设置在该粘着层与该脱除层两者中。
该方法进一步包含实施回焊接合，用以将该集成电路晶粒附接至该TSV中介片的另一表面。
该方法进一步包含在实施回焊接合之后实施底层填充。
移除该已堆叠的中介片单元的动作包括实施化学溶解。
将该已堆叠的中介片单元的该焊接凸块粘结至该有机基板的动作包括实施回焊接合。
该方法进一步包含熔化和该集成电路晶粒相关联的多个IC焊接凸块。
该方法进一步包含放置另一个集成电路(IC)晶粒在该TSV中介片上。
阅读本发明实施例的下面详细说明便会明白其它和进一步观点与特点。
附图说明
附图图解实施例的设计和效用，其中，雷同的元件会以相同的元件符号来表示。此等附图并未必依照比例绘制。为更明白如何达成上述以及其它优点与目的，本发明将特别说明随附附图中所示的实施例。此等附图仅描绘典型的实施例，且因而，不应被视为限制权利要求的范畴。
图1-1至1-5所示的是覆晶堆叠的方法的剖面图。
图2所示的是根据某些实施例的覆晶堆叠的方法的流程图。
图3-1至3-8所示的是根据某些实施例的覆晶堆叠的方法的剖面图。
图4-1至4-8所示的是根据某些实施例的覆晶堆叠的方法的剖面图。
图5所示的是根据某些实施例的覆晶堆叠的方法的流程图。
图6-1至6-10所示的是根据某些实施例的覆晶堆叠的方法的剖面图。
具体实施方式
下文将参考附图来说明各种实施例。应该注意的是，该附图并未依照比例绘制，而且在所有附图中具有雷同结构或功能的元件以相同的元件符号来表示。应该注意的是，该附图仅为帮助说明实施例。它们并没有成为本发明的竭尽式说明或是成为限制本文所主张的发明的范畴的意图。此外，图中所示实施例亦未必具有图中所示的所有观点或优点。图中虽然并未显示，或者，虽然没有明确说明，本文中配合一特殊实施例所述的观点或优点未必受限于该实施例，并且可以实行在任何其它实施例中。另外，整篇说明书中提及的「某些实施例(some embodiments)」或是「其它实施例(other embodiments)」的意义为配合该实施例所述的一特殊特征元件、结构、材料、或是特性包含在至少其中一实施例中。因此，出现在整篇说明书中各个地方的「在某些实施例(in some embodiments)」或是「在其它实施例(inother embodiments)」词组未必是表示相同(多个)实施例。
覆晶堆叠的其中一种方式是涉及将一直通硅穿孔(TSV)中介片放置在一有机基板上并且接着堆叠一集成电路在该TSV中介片上，用以形成覆晶。此种覆晶堆叠的方法的特征为，视所采用的特殊粘结方法和制程参数而定，具有50至80％的组装合格率。覆晶堆叠的组装合格率明显受到现有技术覆晶堆叠期间所发生的TSV中介片翘曲的影响。此种覆晶堆叠可能造成大量的TSV中介片翘曲，其最终会影响IC性能以及组装合格率。
图1-1至1-5所示的是覆晶堆叠的方法的剖面图。一开始，一有机基板101会如图1-1中所示地被形成。该有机基板101可能包含底下的电路以及用以形成通往该底下的电路的连接线的各种外部触垫(图中并未显示)。
一直通硅穿孔(TSV)中介片103接着可以被放置在该有机基板101上，如图1-2中所示。该TSV中介片包含多个穿孔105，它们从该TSV中介片103的顶端表面延伸至该TSV中介片103的底部表面，以便允许在该顶端表面与该底部表面之间进行连接。TSV中介片103的底部表面会被耦合至多个对应的焊接凸块107。该焊接凸块107被耦合至该TSV中介片103的该穿孔105，以便允许连接至该穿孔105。该焊接凸块107可能对应于该有机基板101的外部触垫(图中并未显示)，使得可以经由该TSV中介片103形成通往该有机基板101的底下的电路的连接线。
图1-3所示的是已经被放置在该有机基板101上之后的TSV中介片103。为将TSV中介片103放置在该有机基板上并且形成该TSV中介片的穿孔105和该有机基板101的外部触垫(图中并未显示)之间的连接线，可能要使用一制程来熔化该焊接凸块107，以便形成该TSV中介片103和该有机基板101之间的连接线。
多个集成电路晶粒109可能接着被放置在该TSV中介片103的顶端表面上，用以形成如图1-4中所示的覆晶。该集成电路晶粒109可能包含被耦合至一底部表面的多个集成电路焊接凸块111，用以形成该集成电路晶粒109的底下的电路和该TSV中介片103的该穿孔105之间的连接线。
图1-5所示的是该集成电路晶粒109已经被放置在该TSV中介片103的顶端表面上之后的覆晶。为将该集成电路晶粒109放置在该有机基板101上并且形成该TSV中介片的穿孔105和该集成电路晶粒109之间的连接线，可能会使用一制程来熔化该焊接凸块或铜柱凸块111，以便形成该TSV中介片103和该IC晶粒109之间的连接线。
因为在将该集成电路晶粒109放置在该TSV中介片103上的制程期间没有由该有机基板101提供的机械性支撑的关系，该TSV中介片103会遭受到如图1-5中所示的翘曲。TSV中介片103翘曲的数额会影响IC性能，少量的翘曲导致稍微损降IC性能，而大量的翘曲则最终导致完全无法作用的IC性能。其接着会影响组装合格率，因为遭受严重TSV中介片翘曲的覆晶将被丢弃并且不被使用。
图2所示的是根据某些实施例的用以堆叠覆晶的方法的流程图。图2的方法消除和前面所述覆晶堆叠方式相关联的翘曲问题，用以达成高组装合格率。
一开始，一空腔晶圆会通过在一晶圆中形成多个空腔以及一对转角导轨而形成，如201处所述。该多个空腔以及该对转角导轨会被形成使得它们从该晶圆的顶端表面处向下延伸。在某些实施例中，该多个空腔中的每一个空腔都从该晶圆的顶端表面处延伸至该晶圆的底部表面。在其它实施例中，该多个空腔中的每一个空腔都被形成在该晶圆中，而不会延伸至该晶圆的底部表面。在某些实施例中，该多个空腔可通过下面方式来形成：先利用已图样化成用以定义该多个空腔的光阻来涂布该晶圆；对该晶圆实施反应离子干式蚀刻；以及，接着，利用有机溶剂移除该光阻。
一TSV中介片会被放置在该空腔晶圆上，如203处所述，该TSV中介片具有被耦合至该TSV中介片一表面的多个焊接凸块。该TSV中介片包含多个穿孔。该穿孔从该TSV中介片的顶端表面延伸至该TSV中介片的底部表面，以便允许在该顶端表面与该底部表面之间进行连接。该TSV中介片的底部表面会被耦合至多个对应的焊接凸块，以便允许连接至该穿孔。
该具有多个焊接凸块的TSV中介片被放置在该空腔晶圆上，使得该焊接凸块位于该多个空腔中，而该TSV中介片位于该对转角导轨之间。通过放置该TSV中介片在该空腔晶圆上，该TSV中介片会达到机械性稳定，使得其不会在后续的覆晶堆叠处理期间发生翘曲。
在该多个空腔中的每一个空腔都从该晶圆的顶端表面处延伸至该晶圆的底部表面的某些实施例中会施加真空在该空腔晶圆的底部表面，用以将具有多个焊接凸块的TSV中介片固持(举例来说，机械性稳定)在正确地方。此等实施例将在下面作进一步详细讨论。
在该多个空腔中的每一个空腔都被形成在该晶圆中而不会延伸至该晶圆的底部表面的某些其它实施例中，一层可移除的粘着剂会形成在包含该多个空腔及该对转角导轨的空腔晶圆的一表面上，用以将具有多个焊接凸块的TSV中介片固持(举例来说，机械性稳定)在相对于该空腔晶圆的正确地方。此等实施例将在下面作进一步详细讨论。
一集成电路(IC)晶粒接着会被放置在该TSV中介片的另一表面上，用以形成一已堆叠的中介片单元，如205处所述。该集成电路(IC)、该TSV中介片、以及该焊接凸块会形成该已堆叠的中介片单元。在某些实施例中，可能会在放置该IC晶粒在该TSV的另一表面上之后实施底层填充，使得该IC、该TSV中介片、该焊接凸块、以及该底层填充会一起形成该已堆叠的中介片单元。
在某些实施例中，可能要使用一制程来熔化被耦合至该IC晶粒的多个IC焊接凸块，以便形成该TSV中介片和该IC晶粒之间的连接线(举例来说，回焊接合)。在某些实施例中，单一IC晶粒可能被放置在该TSV中介片的另一表面上。在其它实施例中，一个以上的IC晶粒可能被放置在该TSV中介片的该表面上。此种覆晶堆叠的方法允许该已堆叠的中介片单元的配置(举例来说，IC晶粒的数量)有灵活性。
因为该TSV中介片和该焊接凸块通过该多个空腔和该对转角导轨达到机械性稳定，所以，将该集成电路晶粒放置在该TSV中介片的表面上用以形成一已堆叠的中介片单元不会在该TSV中介片中造成翘曲。
该已堆叠的中介片单元(举例来说，该集成电路、该TSV中介片、以及该焊接凸块)接着会从该空腔晶圆处被移除，如207处所述。在施加真空在该空腔晶圆的底部表面用以将具有多个焊接凸块的TSV中介片固持(举例来说，机械性稳定)在相对于该空腔晶圆的正确地方的某些实施例中，可以简单地移除或关闭该真空，用以允许该已堆叠的中介片单元从该空腔晶圆处移除。于将一层可移除的粘着剂形成在包含该多个空腔及该对转角导轨的空腔晶圆的一表面上用以将具有多个焊接凸块的TSV中介片固持(举例来说，机械性稳定)在相对于该空腔晶圆的正确地方的某些其它实施例中，可以使用化学溶解制程从该空腔晶圆处移除该已堆叠的中介片单元。
一旦该已堆叠的中介片单元被移除之后，该已堆叠的中介片单元的该焊接凸块可能接着会被粘结至一有机基板，用以形成覆晶，如209处所述。在某些实施例中，该已堆叠的中介片单元可通过称为回焊接合的制程被粘结至该有机基板。该已堆叠的中介片单元(举例来说，该IC晶粒、该TSV中介片、以及该焊接凸块)以及该有机基板会一起形成覆晶。该有机基板可能包含底下的电路以及用以形成通往其底下的电路的连接线的各种外部触垫。该焊接凸块可能对应于该有机基板的外部触垫，使得可以经由该TSV中介片形成从该IC晶粒至该有机基板的底下的电路的连接线。
通过将IC晶粒放置在该TSV中介片上的制程期间引进一空腔晶圆来机械性支撑该TSV中介片，该TSV中介片可以受到保护而不会发生翘曲，从而可相较于现有技术覆晶堆叠方法改善IC晶粒性能以及组装合格率。
图3-1至3-8所示的是根据某些实施例的覆晶堆叠的方法的剖面图。一开始，一空腔晶圆301会如图3-1中所示般地形成。该空腔晶圆301包含多个空腔303以及一对转角导轨305。
一TSV中介片接着会被放置在该空腔晶圆上，如图3-2中所示，该TSV中介片具有被耦合至该TSV中介片的底部表面的多个焊接凸块。应该注意的是，在本申请案的内文中，当第一个项目(举例来说，该TSV中介片)被描述成被放置在第二个项目(举例来说，该空腔晶圆)「上」时，该第一个项目可能接触该第二个项目(在此情况中，该第一个项目可能被视为直接在第二个项目「上」)；或者，该第一个项目可能不接触该第二个项目(例如，在有一第三个项目位于该第一个项目与第二个项目之间的情况中，在此情况中，该第一个项目可能被视为间接在第二个项目「上」)。该TSV中介片103包含多个穿孔105，它们从该TSV中介片103的顶端表面延伸至该TSV中介片103的底部表面，以便允许在该顶端表面与该底部表面之间进行连接。TSV中介片103的底部表面会被耦合至多个对应的焊接凸块107。该焊接凸块107被耦合至该TSV中介片103的该穿孔105，以便允许连接至该穿孔105。该焊接凸块107可能对应于一外部部件(举例来说，有机基板)的外部触垫，使得可以经由该TSV中介片103形成通往该外部部件的底下的电路的连接线。
图3-3所示的是已经被放置在该空腔晶圆301上之后的TSV中介片103。在将该TSV中介片103放置在该空腔晶圆上时，一层可移除的粘着剂(图中并未显示)可能会被形成在包含该多个空腔及该对转角导轨的空腔晶圆的一表面上，用以将具有多个焊接凸块的TSV中介片固持在相对于该空腔晶圆的正确地方。该TSV中介片和该焊接凸块107会被放置在该空腔晶圆301上，使得该焊接凸块107位于该多个空腔303中，而该TSV中介片103位于该对转角导轨305之间。依此方式，该TSV中介片和该焊接凸块107可以在后续的覆晶堆叠制程期间通过该空腔晶圆301达到机械性稳定。
一或更多个IC晶粒109接着可以被放置在该TSV中介片103上，如图3-4中所示。该集成电路晶粒109可能包含耦合至一底部表面的多个IC焊接凸块111，用以形成该集成电路晶粒109的底下的电路和该TSV中介片103的该穿孔105之间的连接线。在某些实施例中，该IC焊接凸块111可能为铜柱凸块。
图3-5所示的是已经被放置在TSV中介片103的顶端表面上之后的该集成电路晶粒109。该集成电路晶粒109、该TSV中介片103、以及该焊接凸块107会一起形成一已堆叠的中介片单元113。在某些实施例中，可能会在放置该IC晶粒109在该TSV的另一表面上之后实施底层填充，使得该IC晶粒109、该TSV中介片103、该焊接凸块107、以及该底层填充(图中并未显示)会一起形成该已堆叠的中介片单元113。为将该集成电路晶粒109放置在该有机基板101上并且形成该TSV中介片的穿孔105和该IC晶粒109之间的连接线，可以使用称为回焊接合的制程来熔化该IC焊接凸块111，以便形成该TSV中介片103和该IC晶粒109之间的连接线。
该已堆叠的中介片单元113接着可以从该空腔晶圆处移除，如图3-6中所示。在某些实施例中，可以使用化学溶解制程从该空腔晶圆处移除该已堆叠的中介片单元。该化学溶解会从被形成在该空腔晶圆的表面上的可移除粘着层(图中并未显示)处有效地脱除该已堆叠的中介片单元113。
该已堆叠的中介片单元113接着可以被粘结至一有机基板101，如图3-7中所示。如上面的讨论，该有机基板可能包含底下的电路以及用以形成通往该底下的电路的连接线的各种外部触垫(图中并未显示)。该已堆叠的中介片单元113可被放置成让焊接凸块107对应于该有机基板的外部触垫(图中并未显示)，使得可以经由该TSV中介片103形成从该IC晶粒至该有机基板101的底下的电路的连接线。
图3-8所示的是已经被粘结至该有机基板101之后的已堆叠的中介片单元113。该已堆叠的中介片单元113(举例来说，该IC晶粒109、该TSV中介片103、以及该焊接凸块107)以及该有机基板101会一起形成覆晶300。在某些实施例中，可能会使用称为回焊接合的制程来熔化被耦合至该TSV中介片103的底部表面的多个焊接凸块107，以便形成该TSV中介片103与该有机基板101之间的连接线。
如上面的讨论，通过将IC晶粒放置在该TSV中介片上的制程期间引进一空腔晶圆来机械性支撑该TSV中介片，该TSV中介片可以受到保护而不会发生翘曲，从而可相较于现有技术覆晶堆叠方式改善IC晶粒性能以及组装合格率。
图4-1至4-8所示的是根据某些其它实施例的覆晶堆叠的方法的剖面图。图4-1至4-8中所述的方法虽然同样使用一空腔晶圆来为TSV中介片提供机械性稳定；然而，在其所使用的多个空腔中，并非该多个空腔中的每一个空腔都被形成在该晶圆中而不会延伸至该晶圆的底部表面，相反地，图4-1至4-8的空腔晶圆包括从该晶圆的顶端表面延伸至该晶圆的底部表面的多个空腔。图4-1显示一具有多个空腔405的空腔晶圆400，该空腔405从该空腔晶圆400的顶端表面延伸至该空腔晶圆400的底部表面。该空腔晶圆400还包含一对转角导轨403。
一TSV中介片103接着会被放置在该空腔晶圆400之中，如图4-2中所示，该TSV中介片103具有被耦合至该TSV中介片103的底部表面的多个焊接凸块107。如上面所述，该TSV中介片103包含多个穿孔105，它们从该TSV中介片103的顶端表面延伸至该TSV中介片103的底部表面，以便允许在该顶端表面与该底部表面之间进行连接。TSV中介片103的底部表面会被耦合至多个对应的焊接凸块107。该焊接凸块107被耦合至该TSV中介片103的该穿孔105，以便允许连接至该穿孔105。该焊接凸块107可能对应于一外部部件(举例来说，有机基板)的外部触垫，使得可以经由该TSV中介片103形成通往该外部部件的底下的电路的连接线。
图4-3所示的是已经被放置在该空腔晶圆401中之后的TSV中介片103。在将该TSV中介片103放置在该空腔晶圆中时/之后，会施加真空在该空腔晶圆401的底部表面，用以将具有多个焊接凸块107的TSV中介片103固持(举例来说，机械性稳定)在相对于该空腔晶圆401的正确地方。该TSV中介片103和该焊接凸块107会被放置在该空腔晶圆401上，使得该焊接凸块107位于该多个空腔403中，而该TSV中介片103位于该对转角导轨405之间。依此方式，该TSV中介片103和该焊接凸块107可以在后续的覆晶堆叠制程期间通过该空腔晶圆401达到机械性稳定。
一或更多个IC晶粒109接着可以被放置在该TSV中介片103上，如图4-4中所示。该集成电路晶粒109可能包含被耦合至一底部表面的多个IC焊接凸块111，用以形成该集成电路晶粒109的底下的电路和该TSV中介片103的该穿孔105之间的连接线。在某些实施例中，该IC焊接凸块111可能为铜柱凸块。
图4-5所示的是已经被放置在TSV中介片103的顶端表面上之后的该集成电路晶粒109。该集成电路晶粒109、该TSV中介片103、以及该焊接凸块107会一起形成一已堆叠的中介片单元113。在某些实施例中，可能会在放置该IC晶粒109在该TSV的另一表面上之后实施底层填充，使得该IC晶粒109、该TSV中介片103、该焊接凸块107、以及该底层填充(图中并未显示)会一起形成该已堆叠的中介片单元。为将该集成电路晶粒109放置在该有机基板101上并且形成该TSV中介片的穿孔105和该IC晶粒109之间的连接线，可以使用称为回焊接合的制程来熔化该IC焊接凸块111，以便形成该TSV中介片103和该IC晶粒109之间的连接线。
该已堆叠的中介片单元113接着可以从该空腔晶圆401处移除，如图4-6中所示。在某些实施例中，通过简单地关闭该真空便可以从该空腔晶圆401处简单地移除该已堆叠的中介片单元113。
该已堆叠的中介片单元113接着可以被粘结至一有机基板101，如图4-7中所示。在某些实施例中，该已堆叠的中介片单元113可以使用称为回焊接合的制程被粘结至该有机基板101。如上面的讨论，该有机基板可能包含底下的电路以及用以形成通往该底下的电路的连接线的各种外部触垫(图中并未显示)。该已堆叠的中介片单元113可被放置成让焊接凸块107对应于该有机基板的外部触垫(图中并未显示)，使得可以经由该TSV中介片103形成从该IC晶粒109至该有机基板101的底下的电路的连接线。
图4-8所示的是已经被粘结至该有机基板101之后的已堆叠的中介片单元113。该已堆叠的中介片单元113(举例来说，该IC晶粒109、该TSV中介片103、以及该焊接凸块107)以及该有机基板101会一起形成覆晶300。在某些实施例中，可能会使用一制程来熔化被耦合至该TSV中介片103的底部表面的多个焊接凸块107，以便形成该TSV中介片103与该有机基板101之间的连接线。
和图3-1至3-8中所述的覆晶堆叠方法非常类似，通过将IC晶粒放置在该TSV中介片上的制程期间引进一空腔晶圆来机械性支撑该TSV中介片，该TSV中介片可以受到保护而不会发生翘曲，从而可相较于现有技术覆晶堆叠方式改善IC晶粒性能以及组装合格率。
图3-1至3-8以及图4-1至4-8中所描绘的方法运用空腔晶圆在覆晶堆叠的制程期间为TSV中介片提供机械性稳定。或者，亦可以运用一具有支撑层的晶圆在覆晶堆叠的制程期间为TSV中介片提供机械性稳定。图5以及图6-1至6-10将显示使用一支撑层在覆晶堆叠的制程期间为TSV中介片提供机械性稳定。
图5所示的是根据某些实施例的运用支撑层的覆晶堆叠的方法的流程图。一开始，一支撑层会被形成在某一层的表面上，如501处所述。在某些实施例中，该支撑层可能包括一粘着层与一脱除层。该粘着层可先被形成在该晶圆的一表面上，而该脱除层则接着被形成在该粘着层的一表面上。
一TSV中介片会被放置在该空腔晶圆上，如503处所述，该TSV中介片具有被耦合至该TSV中介片的一表面的多个焊接凸块。该TSV中介片包含多个穿孔。该穿孔从该TSV中介片的顶端表面延伸至该TSV中介片的底部表面，以便允许在该顶端表面与该底部表面之间进行连接。该TSV中介片的底部表面会被耦合至多个对应的焊接凸块，以便允许连接至该穿孔。
该具有多个焊接凸块的TSV中介片被放置在该支撑层上，使得该焊接凸块至少部分位于该支撑层中，而该TSV中介片的(多个)其它部分位于该支撑层的一表面之上(举例来说，位于该支撑层的一表面上)。通过放置该具有多个焊接凸块的TSV中介片至少部分于该支撑层中，该TSV中介片会达到机械性稳定，使得其不会在后续的覆晶堆叠处理期间发生翘曲。在某些实施例中，可能需要施加足够的温度与压力，方能将该具有多个焊接凸块的TSV中介片放置在该支撑层之中，使得该焊接凸块至少部分位于该支撑层中，而该TSV中介片的(多个)其它部分位于该支撑层的一表面上。
一集成电路(IC)晶粒接着会被放置在该TSV中介片的另一表面上，用以形成一已堆叠的中介片单元，如505处所述。该集成电路(IC)、该TSV中介片、以及该焊接凸块会形成该已堆叠的中介片单元。在某些实施例中，可能会在放置该IC晶粒在该TSV的另一表面上之后实施底层填充，使得该IC、该TSV中介片、该焊接凸块、以及该底层填充会一起形成该已堆叠的中介片单元。
在某些实施例中，可能会使用称为回焊接合的制程来熔化被耦合至该IC晶粒的多个IC焊接凸块，以便形成该TSV中介片和该IC晶粒之间的连接线。在某些实施例中，单一IC晶粒可能被放置在该TSV中介片的另一表面上。在其它实施例中，一个以上的IC晶粒可能被放置在该TSV中介片的该表面上。此种覆晶堆叠的方法允许该已堆叠的中介片单元的配置(举例来说，IC晶粒的数量)有灵活性。
因为该TSV中介片和该焊接凸块通过形成在该晶圆顶端的支撑层达到机械性稳定，所以，将该集成电路晶粒放置在该TSV中介片的表面上用以形成一已堆叠的中介片单元不会在该TSV中介片中造成翘曲。
该已堆叠的中介片单元(举例来说，该集成电路、该TSV中介片、以及该焊接凸块)接着会从该支撑层处被机械性移除，如507处所述。在某些实施例中，可以使用化学溶解制程从该支撑层处移除该已堆叠的中介片单元。
一旦该已堆叠的中介片单元移除之后，该已堆叠的中介片单元的该焊接凸块可能接着会被粘结至一有机基板，用以形成覆晶，如509处所述。该已堆叠的中介片单元(举例来说，该IC晶粒、该TSV中介片、以及该焊接凸块)以及该有机基板会一起形成覆晶。该有机基板可能包含底下的电路以及用以形成通往其底下的电路的连接线的各种外部触垫。该焊接凸块可能对应于该有机基板的外部触垫，使得可以经由该TSV中介片形成从该IC晶粒至该有机基板的底下的电路的连接线。
通过将IC晶粒放置在该TSV中介片上的制程期间引进一支撑层来机械性支撑该TSV中介片，该TSV中介片可以受到保护而不会发生翘曲，从而可相较于现有技术覆晶堆叠方式改善IC晶粒性能以及组装合格率。
图6-1至6-10所示的是根据某些其它实施例的覆晶堆叠的方法的剖面图。图6-1至6-10中所述的方法使用一支撑层来为TSV中介片提供机械性稳定。
图6-1显示一支撑晶圆601，其在覆晶堆叠期间帮助达到TSV中介片的机械性稳定。一粘着层603会被形成在该晶圆601的表面上，如图6-2中所示。一脱除层605接着会被形成在该粘着层603的表面上，如图6-3中所示。该脱除层605与该粘着层603会一起形成支撑层607，用以在后续的覆晶堆叠处理期间提供该TSV中介片机械性稳定。
如图6-4中所示，该TSV中介片103具有被耦合至该TSV中介片103的底部表面的多个焊接凸块107。如上面所述，该TSV中介片103包含多个穿孔105，它们从该TSV中介片103的顶端表面延伸至该TSV中介片103的底部表面，以便允许在该顶端表面与该底部表面之间进行连接。TSV中介片103的底部表面会被耦合至多个对应的焊接凸块107。该焊接凸块107被耦合至该TSV中介片103的该穿孔105，以便允许连接至该穿孔105。该焊接凸块107可能对应于一外部部件(举例来说，有机基板)的外部触垫，使得可以经由该TSV中介片103形成通往该外部部件的底下的电路的连接线。
图6-5所示的是已经被放置在该支撑层607上之后的TSV中介片103。该TSV中介片103和该焊接凸块107会被放置形成于支撑晶圆601上的支撑层607上，使得该焊接凸块107至少部分位于该支撑层607中，而该TSV中介片103的(多个)其它部分位于该支撑层607的一表面之上(举例来说，位于该支撑层607的一表面上)。依此方式，该TSV中介片103和该焊接凸块107可以在后续的覆晶堆叠制程期间通过该支撑层607达到机械性稳定。
一或更多个IC晶粒109接着可以被放置在该TSV中介片103上，如图6-6中所示。该集成电路晶粒109可能包含被耦合至一底部表面的多个IC焊接凸块111，用以形成该集成电路晶粒109的底下的电路和该TSV中介片103的该穿孔105之间的连接线。
图6-7所示的是已经被放置在TSV中介片103的顶端表面上之后的该集成电路晶粒109。该集成电路晶粒109、该TSV中介片103、以及该焊接凸块107会一起形成一已堆叠的中介片单元113。在某些实施例中，可能会在放置该IC晶粒109在该TSV的另一表面上之后实施底层填充，使得该IC晶粒109、该TSV中介片103、该焊接凸块107、以及该底层填充(图中并未显示)会一起形成该已堆叠的中介片单元。为将该集成电路晶粒109放置在该有机基板101上并且形成该TSV中介片的穿孔105和该IC晶粒109之间的连接线，可以使用称为回焊接合的制程来熔化该IC焊接凸块111，以便形成该TSV中介片103和该IC晶粒109之间的连接线。
该已堆叠的中介片单元113接着可以从该支撑层607处移除，如图6-8中所示。在某些实施例中，可以使用化学溶解制程从该支撑层607处移除该已堆叠的中介片单元113。该化学溶解会从被形成在该支撑晶圆601上的支撑层607(举例来说，粘着层603以及脱除层605)处有效地脱除该已堆叠的中介片单元113。
该已堆叠的中介片单元113接着可以被粘结至一有机基板101，如图6-9中所示。在某些实施例中，该已堆叠的中介片单元113可能会使用称为回焊接合的制程被粘结至该有机基板101。如上面的讨论，该有机基板101可能包含底下的电路以及用以形成通往该底下的电路的连接线的各种外部触垫(图中并未显示)。该已堆叠的中介片单元113可被放置成让焊接凸块107对应于该有机基板的外部触垫(图中并未显示)，使得可以经由该TSV中介片103形成从该IC晶粒109至该有机基板101的底下的电路的连接线。
图6-10所示的是已经被粘结至该有机基板101之后的已堆叠的中介片单元113。该已堆叠的中介片单元113(举例来说，该IC晶粒109、该TSV中介片103、以及该焊接凸块107)以及该有机基板101会一起形成覆晶300。在某些实施例中，可能会使用称为回焊接合的制程来熔化被耦合至该TSV中介片103的底部表面的多个焊接凸块107，以便形成该TSV中介片103与该有机基板101之间的连接线。
和图3-1至3-8以及图4-1至4-8中所述的覆晶堆叠方法非常类似，通过在放置IC晶粒在该TSV中介片上的制程期间引进一支撑层来机械性支撑该TSV中介片，该TSV中介片可以受到保护而不会发生翘曲，从而可相较于现有技术覆晶堆叠方式改善IC晶粒性能以及组装合格率。
以上所述仅是本发明的优选实施例而已，并非对本发明做任何形式上的限制，虽然本发明已以优选实施例披露如上，然而并非用以限定本发明，任何本领域的技术人员，在不脱离本发明技术方案的范围内，应当可以利用上述揭示的技术内容作出些许改变或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (15)

1.一种覆晶堆叠的方法，其特征在于：包括：
形成一晶圆，其包括多个空腔以及一对转角导轨；
将一直通硅穿孔(TSV)中介片放置在该晶圆上，该TSV中介片具有被耦合至该TSV中介片一表面的多个焊接凸块，其中，当该TSV中介片放置在该晶圆上的时候，
该焊接凸块位于晶圆的该多个空腔中，
该TSV中介片位于该对转角导轨之间，
该TSV中介片的表面中除了具有该焊接凸块的部分的其它部分表面位于该晶圆上，且
介于该焊接凸块之间的该TSV中介片的部分会由该晶圆机械性地支撑；
将一集成电路(IC)晶粒放置在该TSV中介片的另一表面上，使得该IC晶粒、该TSV中介片、以及该焊接凸块形成一已堆叠的中介片单元；
从该晶圆处移除该已堆叠的中介片单元；以及
将该已堆叠的中介片单元的焊接凸块粘结至一有机基板，使得该已堆叠的中介片单元与该有机基板形成覆晶。
2.如权利要求1的方法，其特征在于：该多个空腔从该晶圆的顶端表面延伸至该晶圆的底部表面。
3.如权利要求2的方法，其特征在于：进一步包括在该晶圆的底部表面施加真空，用以将具有多个焊接凸块的该TSV中介片固持在相对于该晶圆的地方。
4.如权利要求1的方法，其特征在于：进一步包括：
在包含该多个空腔及该对转角导轨的晶圆的一表面上形成一层可移除的粘着剂；以及
将具有多个焊接凸块的该TSV中介片放置在该层可移除的粘着剂上，使得该层可移除的粘着剂将该TSV中介片固持在相对于该晶圆的地方。
5.如权利要求1的方法，其特征在于：进一步包括实施回焊接合，用以将该集成电路晶粒附接至该TSV中介片的其它表面。
6.如权利要求5的方法，其特征在于：进一步包括在实施回焊接合之后实施底层填充。
7.如权利要求1的方法，其特征在于：移除该已堆叠的中介片单元的动作包括实施化学溶解。
8.如权利要求1的方法，其特征在于：将该已堆叠的中介片单元的该焊接凸块粘结至该有机基板的动作包括实施回焊接合。
9.如权利要求1的方法，其特征在于：该多个空腔通过下面方法形成：图样化晶圆上的光阻；对该具有已图样化光阻的晶圆实施反应离子干式蚀刻；以及利用有机溶剂移除该光阻。
10.如权利要求1的方法，其特征在于：进一步包括放置另一个集成电路(IC)晶粒在该TSV中介片上。
11.一种结构，其特征在于：包括：
一晶圆，其包括多个空腔以及一对转角导轨；
一直通硅穿孔(TSV)中介片，其设置在该晶圆上，其中，该TSV中介片位于该对转角导轨之间，该TSV中介片具有设置在该TSV中介片一表面的多个焊接凸块，该焊接凸块位于该晶圆的该多个空腔中，该TSV中介片的表面中除了具有该焊接凸块的部分的其它部分表面位于该晶圆上，且介于该焊接凸块之间的该TSV中介片的部分会由该晶圆机械性地支撑；以及
一集成电路(IC)晶粒，其设置在该TSV中介片的另一表面上。
12.如权利要求11的结构，其特征在于：该多个空腔从该晶圆的顶端表面延伸至该晶圆的底部表面。
13.如权利要求11的结构，其特征在于：进一步包括一层可移除的粘着剂，其设置在该晶圆和该TSV中介片之间，且设置在包含该多个空腔的晶圆的一表面上。
14.如权利要求11的结构，其特征在于：进一步包括一底层填充，其设置在该集成电路晶粒和该TSV中介片之间。
15.如权利要求11的结构，其特征在于：进一步包括另一个集成电路晶粒，其设置在该TSV中介片上。
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