CN1043694C - 内源电压发生电路 - Google Patents

内源电压发生电路 Download PDF

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Publication number
CN1043694C
CN1043694C CN93103554A CN93103554A CN1043694C CN 1043694 C CN1043694 C CN 1043694C CN 93103554 A CN93103554 A CN 93103554A CN 93103554 A CN93103554 A CN 93103554A CN 1043694 C CN1043694 C CN 1043694C
Authority
CN
China
Prior art keywords
voltage
source voltage
reference voltage
external source
order
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN93103554A
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English (en)
Chinese (zh)
Other versions
CN1077048A (zh
Inventor
徐英豪
金奭斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1077048A publication Critical patent/CN1077048A/zh
Application granted granted Critical
Publication of CN1043694C publication Critical patent/CN1043694C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Tests Of Electronic Circuits (AREA)
CN93103554A 1992-03-31 1993-03-31 内源电压发生电路 Expired - Fee Related CN1043694C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019920005350A KR950008453B1 (ko) 1992-03-31 1992-03-31 내부전원전압 발생회로
KR5350/92 1992-03-31

Publications (2)

Publication Number Publication Date
CN1077048A CN1077048A (zh) 1993-10-06
CN1043694C true CN1043694C (zh) 1999-06-16

Family

ID=19331163

Family Applications (1)

Application Number Title Priority Date Filing Date
CN93103554A Expired - Fee Related CN1043694C (zh) 1992-03-31 1993-03-31 内源电压发生电路

Country Status (8)

Country Link
US (1) US5321653A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0564280B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH06103793A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR950008453B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1043694C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69321017T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
RU (1) RU2137178C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW217476B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100414644C (zh) * 2003-05-19 2008-08-27 三菱电机株式会社 电压发生电路

Families Citing this family (36)

* Cited by examiner, † Cited by third party
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KR930008886B1 (ko) * 1991-08-19 1993-09-16 삼성전자 주식회사 전기적으로 프로그램 할 수 있는 내부전원 발생회로
KR0140673B1 (ko) * 1993-01-27 1998-06-01 모리시다 요이찌 반도체 메모리
DE69320326T2 (de) * 1993-05-07 1998-12-24 Sgs-Thomson Microelectronics S.R.L., Agrate Brianza, Mailand/Milano Mit niedriger Versorgungsspannung arbeitender, eine Hysteresis aufweisender Komparator
US5399928A (en) * 1993-05-28 1995-03-21 Macronix International Co., Ltd. Negative voltage generator for flash EPROM design
JPH07130170A (ja) * 1993-10-29 1995-05-19 Mitsubishi Electric Corp 基準電圧発生回路
US5440519A (en) * 1994-02-01 1995-08-08 Micron Semiconductor, Inc. Switched memory expansion buffer
JPH07229932A (ja) * 1994-02-17 1995-08-29 Toshiba Corp 電位検知回路
US5497348A (en) * 1994-05-31 1996-03-05 Texas Instruments Incorporated Burn-in detection circuit
US5625305A (en) * 1994-10-20 1997-04-29 Acer Incorporated Load detection apparatus
JP2785732B2 (ja) * 1995-02-08 1998-08-13 日本電気株式会社 電源降圧回路
US5570060A (en) * 1995-03-28 1996-10-29 Sgs-Thomson Microelectronics, Inc. Circuit for limiting the current in a power transistor
JP3629308B2 (ja) * 1995-08-29 2005-03-16 株式会社ルネサステクノロジ 半導体装置およびその試験方法
JP2830799B2 (ja) * 1995-10-25 1998-12-02 日本電気株式会社 半導体集積回路装置
KR100214466B1 (ko) * 1995-12-26 1999-08-02 구본준 반도체 메모리의 셀프 번인회로
US5892394A (en) * 1996-07-19 1999-04-06 Holtek Microelectronics Inc. Intelligent bias voltage generating circuit
JP3516556B2 (ja) * 1996-08-02 2004-04-05 沖電気工業株式会社 内部電源回路
JP3709246B2 (ja) * 1996-08-27 2005-10-26 株式会社日立製作所 半導体集積回路
US5838171A (en) * 1996-11-22 1998-11-17 National Semiconductor Corporation Low power real-time clock circuit having system and battery power arbitration
US5818764A (en) * 1997-02-06 1998-10-06 Macronix International Co., Ltd. Block-level wordline enablement to reduce negative wordline stress
JP4074697B2 (ja) * 1997-11-28 2008-04-09 株式会社ルネサステクノロジ 半導体装置
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
JPH11231954A (ja) * 1998-02-16 1999-08-27 Mitsubishi Electric Corp 内部電源電圧発生回路
KR19990073643A (ko) * 1998-03-02 1999-10-05 김영환 전원 제어회로
US6023176A (en) * 1998-03-27 2000-02-08 Cypress Semiconductor Corp. Input buffer
ATE314095T1 (de) * 1998-10-21 2006-01-15 Us Health Virusähnliche partikel zur induktion von autoantikörpern
JP2000228084A (ja) * 1999-02-05 2000-08-15 Mitsubishi Electric Corp 電圧発生回路
KR100323981B1 (ko) * 1999-09-01 2002-02-16 윤종용 반도체 메모리 장치의 내부전원전압 발생회로
GB2360863B (en) * 1999-11-15 2002-08-28 Scott C Harris Automatic cell phone detection at a combustible delivery station
KR100550637B1 (ko) * 2000-12-30 2006-02-10 주식회사 하이닉스반도체 저전압 감지기를 내장한 고전압 검출기
JP4030409B2 (ja) * 2002-10-31 2008-01-09 株式会社ルネサステクノロジ レベル判定回路
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
US7057447B1 (en) * 2004-03-04 2006-06-06 National Semiconductor Corporation Voltage regulator using a single voltage source and method
KR100616194B1 (ko) * 2004-04-20 2006-08-25 주식회사 하이닉스반도체 지연 고정 루프 회로용 내부 전원 전압 발생기
JP4354360B2 (ja) * 2004-07-26 2009-10-28 Ｏｋｉセミコンダクタ株式会社 降圧電源装置
US9317051B2 (en) * 2014-02-06 2016-04-19 SK Hynix Inc. Internal voltage generation circuits
JP2016080623A (ja) * 2014-10-21 2016-05-16 旭化成エレクトロニクス株式会社 半導体集積回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721151B2 (ja) * 1986-04-01 1998-03-04 株式会社東芝 半導体集積回路装置
JP2904276B2 (ja) * 1987-02-24 1999-06-14 沖電気工業株式会社 半導体集積回路装置
US5046052A (en) * 1988-06-01 1991-09-03 Sony Corporation Internal low voltage transformation circuit of static random access memory
JPH03198296A (ja) * 1989-12-26 1991-08-29 Nec Corp 半導体メモリ
JP2888898B2 (ja) * 1990-02-23 1999-05-10 株式会社日立製作所 半導体集積回路
JPH03296118A (ja) * 1990-04-13 1991-12-26 Oki Micro Design Miyazaki:Kk 基準電圧発生回路
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로
JP2945508B2 (ja) * 1991-06-20 1999-09-06 三菱電機株式会社 半導体装置
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100414644C (zh) * 2003-05-19 2008-08-27 三菱电机株式会社 电压发生电路

Also Published As

Publication number Publication date
EP0564280A2 (en) 1993-10-06
EP0564280B1 (en) 1998-09-16
KR930020449A (ko) 1993-10-19
EP0564280A3 (en) 1994-08-24
DE69321017D1 (de) 1998-10-22
JPH06103793A (ja) 1994-04-15
US5321653A (en) 1994-06-14
KR950008453B1 (ko) 1995-07-31
RU2137178C1 (ru) 1999-09-10
CN1077048A (zh) 1993-10-06
TW217476B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-12-11
DE69321017T2 (de) 1999-03-04

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 19990616

Termination date: 20110331