CN104335328B - 碳化硅半导体装置的制造方法以及由该方法制造的碳化硅半导体装置 - Google Patents

碳化硅半导体装置的制造方法以及由该方法制造的碳化硅半导体装置 Download PDF

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Publication number
CN104335328B
CN104335328B CN201380018092.XA CN201380018092A CN104335328B CN 104335328 B CN104335328 B CN 104335328B CN 201380018092 A CN201380018092 A CN 201380018092A CN 104335328 B CN104335328 B CN 104335328B
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silicon carbide
semiconductor device
carbide semiconductor
manufacturing
layer
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CN104335328A (zh
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木下明将
辻崇
福田宪司
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/031—Manufacture or treatment of three-or-more electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H10D64/0123—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201380018092.XA 2012-03-30 2013-03-14 碳化硅半导体装置的制造方法以及由该方法制造的碳化硅半导体装置 Active CN104335328B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012082041A JP6112699B2 (ja) 2012-03-30 2012-03-30 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP2012-082041 2012-03-30
PCT/JP2013/057314 WO2013146328A1 (ja) 2012-03-30 2013-03-14 炭化珪素半導体装置の製造方法及び当該方法により製造された炭化珪素半導体装置

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CN104335328A CN104335328A (zh) 2015-02-04
CN104335328B true CN104335328B (zh) 2018-02-06

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US (1) US9768260B2 (cg-RX-API-DMAC10.html)
JP (1) JP6112699B2 (cg-RX-API-DMAC10.html)
CN (1) CN104335328B (cg-RX-API-DMAC10.html)
WO (1) WO2013146328A1 (cg-RX-API-DMAC10.html)

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JP6112699B2 (ja) * 2012-03-30 2017-04-12 富士電機株式会社 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP6028676B2 (ja) * 2013-05-21 2016-11-16 住友電気工業株式会社 炭化珪素半導体装置
JP6160708B2 (ja) 2013-11-22 2017-07-12 富士電機株式会社 炭化珪素半導体装置
US9842738B2 (en) * 2014-04-09 2017-12-12 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
US10797137B2 (en) * 2017-06-30 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height
CN108321213A (zh) * 2017-12-21 2018-07-24 秦皇岛京河科学技术研究院有限公司 SiC功率二极管器件的制备方法及其结构
US11538769B2 (en) * 2018-12-14 2022-12-27 General Electric Company High voltage semiconductor devices having improved electric field suppression
CN110349839B (zh) * 2019-06-21 2021-03-12 全球能源互联网研究院有限公司 一种p/n型碳化硅欧姆接触的制备方法
US12606904B2 (en) 2020-04-01 2026-04-21 Canon Anelva Corporation Film forming apparatus, control apparatus for film forming appartus, and film forming method
CN115989578A (zh) * 2021-05-18 2023-04-18 佳能安内华股份有限公司 层叠体和层叠体制造方法

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US20070138482A1 (en) * 2005-12-08 2007-06-21 Nissan Motor Co., Ltd. Silicon carbide semiconductor device and method for producing the same
US20090098719A1 (en) * 2007-10-11 2009-04-16 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device
US7790616B2 (en) * 2007-08-29 2010-09-07 Northrop Grumman Systems Corporation Encapsulated silicidation for improved SiC processing and device yield

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JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
DE59914269D1 (de) * 1998-09-02 2007-05-03 Siced Elect Dev Gmbh & Co Kg Halbleitervorrichtung mit ohmscher kontaktierung und verfahren zur ohmschen kontaktierung einer halbleitervorrichtung
JP3646548B2 (ja) * 1999-01-11 2005-05-11 富士電機ホールディングス株式会社 ＳｉＣ半導体デバイス
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6759683B1 (en) * 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
JP3871607B2 (ja) 2001-12-14 2007-01-24 松下電器産業株式会社 半導体素子およびその製造方法
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JP5408248B2 (ja) * 2009-05-20 2014-02-05 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
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JP6112699B2 (ja) * 2012-03-30 2017-04-12 富士電機株式会社 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP5966556B2 (ja) * 2012-04-18 2016-08-10 富士電機株式会社 半導体デバイスの製造方法

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US20070138482A1 (en) * 2005-12-08 2007-06-21 Nissan Motor Co., Ltd. Silicon carbide semiconductor device and method for producing the same
US7790616B2 (en) * 2007-08-29 2010-09-07 Northrop Grumman Systems Corporation Encapsulated silicidation for improved SiC processing and device yield
US20090098719A1 (en) * 2007-10-11 2009-04-16 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device

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Publication number Publication date
JP6112699B2 (ja) 2017-04-12
JP2013211485A (ja) 2013-10-10
WO2013146328A1 (ja) 2013-10-03
CN104335328A (zh) 2015-02-04
US9768260B2 (en) 2017-09-19
US20150056786A1 (en) 2015-02-26

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