CN104269414A - 一种阵列基板及其制作方法、显示装置 - Google Patents

一种阵列基板及其制作方法、显示装置 Download PDF

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Publication number
CN104269414A
CN104269414A CN201410498785.XA CN201410498785A CN104269414A CN 104269414 A CN104269414 A CN 104269414A CN 201410498785 A CN201410498785 A CN 201410498785A CN 104269414 A CN104269414 A CN 104269414A
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layer
electrode
pixel electrode
array base
active layer
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CN201410498785.XA
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CN104269414B (zh
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王盛
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Priority to CN201410498785.XA priority Critical patent/CN104269414B/zh
Priority to US14/769,221 priority patent/US9786696B2/en
Priority to EP15804664.9A priority patent/EP3200231B1/en
Priority to PCT/CN2015/070047 priority patent/WO2016045241A1/zh
Publication of CN104269414A publication Critical patent/CN104269414A/zh
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract

本发明实施例公开了一种阵列基板及其制作方法、显示装置，涉及显示技术领域，能够有效提高存储电容。该阵列基板包括衬底基板和依次位于所述衬底基板上的同层设置的栅线和公共电极、栅极绝缘层、有源层、同层设置的源极和漏极，所述阵列基板还包括像素电极，所述像素电极和所述有源层同层设置。

Description

一种阵列基板及其制作方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法、显示装置。
背景技术
液晶显示器是一种常用的显示装置，其具有轻薄和低功耗等优点，被广泛应用于显示、通信、多媒体等多个技术领域。
具体地，液晶显示器包括阵列基板，阵列基板的结构如图1所示，阵列基板包括衬底基板1’以及依次设置于衬底基板1’上的同层设置的栅极2’和公共电极3’，栅极绝缘层4’，有源层5’，同层设置的源极6’、漏极7’和数据线8’，钝化层9’和像素电极10’。其中，像素电极10’、钝化层9’、栅极绝缘层4’和公共电极3’构成存储电容，存储电容的作用在于维持液晶显示器的显示画面的稳定。
发明人发现，现有技术中阵列基板上的存储电容较小，不利于显示画面的稳定。
发明内容
本发明所要解决的技术问题在于提供一种阵列基板及其制作方法、显示装置，能够有效提高存储电容。
为解决上述技术问题，本发明实施例提供了一种阵列基板，采用如下技术方案：
一种阵列基板，包括衬底基板和依次位于所述衬底基板上的同层设置的栅线和公共电极、栅极绝缘层、有源层、同层设置的数据线、源极和漏极，所述阵列基板还包括像素电极，所述像素电极和所述有源层同层设置。
所述漏极覆盖所述有源层靠近所述像素电极的一端以及所述像素电极靠近所述有源层的一端，并填充在所述有源层和所述像素电极之间。
所述有源层包括金属氧化物半导体，所述像素电极为金属氧化物半导体经金属化处理形成，其中，用于形成所述像素电极的金属氧化物半导体与所述有源层包括的金属氧化物半导体的材料相同。
所述有源层包括欧姆接触区和位于所述欧姆接触区之间的用于作为沟道的沟道区，所述阵列基板还包括位于所述沟道区上的刻蚀阻挡结构。
所述有源层包括两个所述欧姆接触区，所述源极覆盖一个所述欧姆接触区，所述漏极覆盖另一个所述欧姆接触区以及所述像素电极靠近所述有源层的一端，并填充在所述有源层和所述像素电极之间。
所述公共电极包括与所述数据线平行的部分和与所述数据线垂直的部分。
所述阵列基板还包括位于同层设置的所述数据线、所述源极和所述漏极上的钝化层以及位于所述钝化层上的透明电极，所述透明电极位于所述数据线和所述公共电极上方。
非显示区域内的所述透明电极包括三个相互独立的透明导电部分，其中第一个透明导电部分通过过孔连接所述栅线，第二个透明导电部分通过过孔连接所述公共电极，第三个透明导电部分通过过孔连接所述数据线。
本发明实施例提供了一种阵列基板，该阵列基板包括衬底基板和依次位于衬底基板上的同层设置的栅线和公共电极、栅极绝缘层、有源层、同层设置的数据线、源极和漏极，阵列基板还包括像素电极，像素电极和有源层同层设置，现有技术中阵列基板上的存储电容为像素电极、钝化层、栅极绝缘层和公共电极形成的电容，而本发明实施例中像素电极和公共电极之间的仅设置有栅极绝缘层，存储电容为像素电极、栅极绝缘层和公共电极形成的电容，从而能够有效提高存储电容，改善显示装置的显示效果。
此外，本发明实施例还提供了一种显示装置，该显示装置包括以上任一种实施方式所述的阵列基板。
为了进一步解决上述技术问题，本发明实施例还提供了一种阵列基板的制作方法，采用如下技术方案：
一种阵列基板的制作方法包括：
在衬底基板上形成包括栅线和公共电极的图形；
在形成了包括所述栅线和所述公共电极的图形的所述衬底基板上，形成栅极绝缘层；
在形成了所述栅极绝缘层的所述衬底基板上，形成包括有源层和像素电极的图形，所述像素电极和所述有源层同层设置；
在形成了包括所述像素电极的图形的所述衬底基板上，形成包括数据线、源极和漏极的图形。
所述在形成了栅极绝缘层的所述衬底基板上，形成包括有源层和像素电极的图形，所述像素电极和所述有源层同层设置，包括：
在形成了所述栅极绝缘层的所述衬底基板上，沉积一层金属氧化物半导体层，经过构图工艺形成包括所述有源层和像素电极预结构的图形；
对所述像素电极预结构进行金属化处理，形成所述像素电极。
所述金属化处理包括在100-300℃还原性气氛中对所述像素电极预结构中的金属氧化物半导体处理30-120min。
所述还原性气氛包括氢气或者含氢等离子体。
所述在形成了所述栅极绝缘层的所述衬底基板上，沉积一层金属氧化物半导体层，经过构图工艺形成包括所述有源层和像素电极预结构的图形，包括：
在形成了所述栅极绝缘层的所述衬底基板上，沉积一层金属氧化物半导体层；
在形成了所述金属氧化物半导体层的所述衬底基板上，形成一层刻蚀阻挡层；
在形成了所述刻蚀阻挡层的所述衬底基板上，涂覆一层光刻胶；
通过构图工艺，形成光刻胶完全保留区、光刻胶部分保留区和光刻胶完全去除区，所述光刻胶完全保留区对应于所述有源层中用于作为沟道的沟道区所在区域，所述光刻胶部分保留区对应于所述有源层中的欧姆接触区所在区域和所述像素电极所在区域，所述光刻胶完全去除区对应于其他区域；
刻蚀去除无所述光刻胶覆盖区域的所述刻蚀阻挡层和所述金属氧化物半导体层；
通过灰化工艺去除所述光刻胶部分保留区，同时所述光刻胶完全保留区的厚度减薄；
将去除所述光刻胶部分保留区后暴露的所述刻蚀阻挡层去除；
剥离所述光刻胶，形成包括所述有源层、所述像素电极预结构和所述刻蚀阻挡结构的图形，所述刻蚀阻挡结构位于所述有源层中用于作为沟道的沟道区上；
所述对所述像素电极预结构进行金属化处理，形成所述像素电极的同时，对所述有源层中用于形成所述欧姆接触区的区域进行金属化处理，形成所述欧姆接触区，其中所述沟道区上覆盖有所述刻蚀阻挡结构，所述沟道区未被金属化处理，以形成包括所述欧姆接触区和所述沟道区的所述有源层。
所述阵列基板的制作方法还包括：
在形成了包括所述数据线、所述源极和所述漏极的图形的所述衬底基板上，形成钝化层；
在形成了所述钝化层的所述衬底基板上，形成包括透明电极的图形，所述透明电极位于所述数据线和所述公共电极上方。
本发明实施例提供了一种阵列基板的制作方法，该阵列基板的制作方法包括：在衬底基板上形成包括栅线和公共电极的图形，形成栅极绝缘层，形成包括有源层的图形，形成包括像素电极的图形，像素电极和有源层同层设置，形成包括数据线、源极和漏极的图形。现有技术中阵列基板上的存储电容为像素电极、钝化层、栅极绝缘层和公共电极形成的电容，而采用本发明实施例的制作方法制作的阵列基板上的像素电极和公共电极之间的仅设置有栅极绝缘层，存储电容为像素电极、栅极绝缘层和公共电极形成的电容，从而能够有效提高存储电容，改善显示装置的显示效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中的阵列基板的截面示意图；
图2为本发明实施例中的阵列基板的平面示意图；
图3为本发明实施例中图2沿A-A’方向的截面示意图；
图4为本发明实施例中的阵列基板的制作过程示意图；
图5为本发明实施例中的阵列基板的制作流程图；
图6为本发明实施例中在形成了栅极绝缘层的衬底基板上，形成包括同层设置的有源层和像素电极的图形的制作过程示意图；
图7为本发明实施例中在形成了栅极绝缘层的衬底基板上，形成包括同层设置的有源层和像素电极的图形的具体流程图。
附图标记说明：
10—衬底基板；     20—栅线；     21—公共电极；
30—栅极绝缘层；   40—有源层；   41—欧姆接触区；
42—沟道区；       50—像素电极； 60—数据线；
61—源极；         62—漏极；     70—钝化层；
80—刻蚀阻挡结构； 90—透明电极； 31—金属氧化物半导体
                                  层；
32—刻蚀阻挡层；   33—光刻胶；   331—光刻胶完全保留
                                  区；
332—光刻胶部分保  333—光刻胶完全去除
留区；             区。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
如图2和图3所示，该阵列基板包括衬底基板10和依次位于衬底基板10上的同层设置的栅线20和公共电极21、栅极绝缘层30(图2是阵列基板的平面示意图，图2中无法看到栅极绝缘层30)、有源层40、同层设置的数据线60、源极61和漏极62，该阵列基板还包括像素电极50，像素电极50和有源层40同层设置。此时，存储电容为像素电极50、栅极绝缘层30和公共电极21形成的电容，而现有技术中存储电容为像素电极、钝化层、栅极绝缘层和公共电极形成的电容，与现有技术相比，本发明实施例中的存储电容中的绝缘层仅为栅极绝缘层30，从而使得像素电极50、栅极绝缘层30和公共电极21形成的存储电容较大，从而能够有效改善显示装置的显示效果。此外，由于像素电极50和有源层40同层设置，因此，漏极62覆盖有源层40靠近像素电极50的一端以及像素电极50靠近有源层40的一端，并填充在有源层40和像素电极50之间，以实现漏极62与像素电极50的连接。
如图2所示，本发明实施例中的公共电极21包括与数据线60平行的部分和与数据线60垂直的部分，此种设计能够有效减小公共电极21的电阻，改善阵列基板的性能。
需要说明的是，本发明实施例中的阵列基板上未设置有栅极，而是使有源层40位于栅线20上方，栅线20上的信号即可实现对有源层40的控制，进而控制源极和漏极之间是否导通，本领域技术人员也可以在阵列基板上设置栅极，本发明实施例对此不进行限定。
进一步地，由于金属氧化物半导体具有较高的迁移率，因此，本发明实施例中的有源层40包括金属氧化物半导体。为了简化阵列基板的制作方法，本发明实施例中的像素电极50为金属氧化物半导体经金属化处理形成的结构，且用于形成像素电极50的金属氧化物半导体与作为有源层40的金属氧化物半导体的材料相同。示例性地，上述金属氧化物半导体可以为InGaZnO、InGaO、ITZO、AlZnO中的一种或者多种。
进一步地，如图3所示，有源层40包括欧姆接触区41和位于欧姆接触区41之间的用于作为沟道的沟道区42，其中，欧姆接触区41可通过对有源层40中用于作为欧姆接触区41的区域进行金属化处理形成。此时，阵列基板还包括位于沟道区42上的刻蚀阻挡结构80。刻蚀阻挡结构80的作用在于：在金属化处理过程中保证沟道区42的金属氧化物半导体不被金属化处理。
示例性地，有源层40包括两个欧姆接触区41时，源极61覆盖一个欧姆接触区41，漏极62覆盖另一个欧姆接触区41以及像素电极50靠近有源层40的一端，并填充在有源层40和像素电极50之间，以实现漏极62和像素电极50的连接。
此外，如图2和图3所示，本发明实施例中的阵列基板还包括位于同层设置的数据线60、源极61和漏极62上的钝化层70以及位于钝化层70上的透明电极90，透明电极90位于数据线60和公共电极21上方。一方面，能够减小数据线60和像素电极50之间形成的耦合电容，从而减小数据线60和像素电极50之间的串扰。非显示区域内的透明电极90包括多个相互独立的透明导电部分，每个透明导电部分通过过孔连接下方的导线。示例性地，非显示区域内的透明电极90包括三个相互独立的透明导电部分，其中第一个透明导电部分通过过孔连接栅线20，将栅极驱动信号提供给栅线，第二个透明导电部分通过过孔连接公共电极21，将公共电极信号提供给公共电极21，第三个透明导电部分通过过孔连接数据线60，从而将数据信号提供给数据线60。
另一方面，由于像素电极50上覆盖有钝化层70和透明电极90，当液晶盒内部存在金属性异物时，金属性异物不会使得像素电极50和彩膜基板上的公共电极直接导通，不会影响显示装置的显示效果。
本发明实施例提供了一种阵列基板，该阵列基板包括衬底基板和依次位于衬底基板上的同层设置的栅线和公共电极、栅极绝缘层、有源层、同层设置的数据线、源极和漏极，阵列基板还包括像素电极，像素电极和有源层同层设置，现有技术中阵列基板上的存储电容为像素电极、钝化层、栅极绝缘层和公共电极形成的电容，而本发明实施例中像素电极和公共电极之间的仅设置有栅极绝缘层，存储电容为像素电极、栅极绝缘层和公共电极形成的电容，从而能够有效提高存储电容，改善显示装置的显示效果。
此外，本发明实施例还提供了一种显示装置，该显示装置包括以上任一种实施方式所述的阵列基板。该显示装置可以为：液晶面板、电子纸、有机发光显示面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
实施例二
本发明实施例提供了一种阵列基板的制作方法，该阵列基板的制作方法用于制作实施例一中所述的阵列基板，具体地，阵列基板的制作过程如图4所示，具体包括图5所示的各个步骤。
步骤S501、在衬底基板10上形成包括栅线20和公共电极21的图形。
首先，在衬底基板10上沉积一层栅极金属层；其次，经过构图工艺形成包括栅线20和公共电极21的图形。需要说明的是，如无特别强调，本申请中的构图工艺包括：涂覆光刻胶、使用具有相应图案的掩膜板遮盖、曝光、显影、刻蚀和剥离光刻胶。
需要说明的是，本发明实施例中未在阵列基板上形成栅极，本领域技术人员也可以在形成栅线20的同时形成栅极，本发明实施例对此不进行限定。
步骤S502、在形成了包括栅线20和公共电极21的图形的衬底基板10上，形成栅极绝缘层30。
步骤S503、在形成了栅极绝缘层30的衬底基板10上，形成包括有源层40和像素电极50的图形，像素电极50和有源层40同层设置。
首先，在形成了栅极绝缘层30的衬底基板10上，沉积一层金属氧化物半导体层，经过构图工艺形成包括有源层40和像素电极预结构的图形。
其次，对像素电极预结构进行金属化处理，形成像素电极50。具体地，金属化处理包括在100-300℃还原性气氛中对像素电极预结构中的金属氧化物半导体处理30-120min，还原性气氛包括氢气或者含氢等离子体。在金属化处理过程中，将氢元素掺杂入金属氧化物半导体中，从而使得金属氧化物半导体转化为导体。
步骤S504、在形成了包括像素电极50的图形的衬底基板10上，形成包括数据线60、源极61和漏极62的图形。
首先，在形成了包括像素电极50的图形的衬底基板10上沉积一层数据线金属层；其次，经过构图工艺形成包括数据线60、源极61和漏极62的图形。
进一步地，步骤S503中在形成了栅极绝缘层30的衬底基板10上，沉积一层金属氧化物半导体层，经过构图工艺形成包括有源层40和像素电极预结构的图形的制作过程如图6所示，具体包括如图7所示的步骤。
步骤S701、在形成了栅极绝缘层30的衬底基板10上，沉积一层金属氧化物半导体层31。
步骤S702、在形成了金属氧化物半导体层31的衬底基板10上，形成一层刻蚀阻挡层32。
步骤S703、在形成了刻蚀阻挡层32的衬底基板10上，涂覆一层光刻胶33。
步骤S704、通过构图工艺，形成光刻胶完全保留区331、光刻胶部分保留区332和光刻胶完全去除区333。
其中，光刻胶完全保留区331对应于有源层中用于作为沟道的沟道区所在区域，光刻胶部分保留区332对应于有源层中的欧姆接触区所在区域和像素电极所在区域，光刻胶完全去除区333对应于其他区域。
在构图工艺中优选使用灰阶掩膜板，该灰阶掩膜板包括完全不透光区、半透光区和完全透光区，完全不透光区对应于有源层中用于作为沟道的沟道区所在区域，显影后光刻胶33完全保留，形成光刻胶完全保留区331，半透光区对应于有源层中的欧姆接触区和像素电极所在区域，显影后光刻胶33部分保留，形成光刻胶部分保留区332，完全透光区对应于其他区域，显影后光刻胶33完全去除，形成光刻胶完全去除区333。
步骤S705、刻蚀去除光刻胶完全去除区333的刻蚀阻挡层32和金属氧化物半导体层31。
步骤S706、通过灰化工艺去除部分光刻胶部分保留区332，同时光刻胶完全保留区331的厚度减薄。
步骤S707、将去除光刻胶部分保留区332后暴露的刻蚀阻挡层32去除。
步骤S708、剥离光刻胶33，形成包括有源层、像素电极预结构和刻蚀阻挡结构的图形，刻蚀阻挡结构位于有源层中用于作为沟道的沟道区上。
此时，对像素电极预结构进行金属化处理，形成像素电极的同时，对有源层中欧姆接触区所在区域进行金属化处理，形成欧姆接触区，其中沟道区上覆盖有刻蚀阻挡结构，使得沟道区未被金属化处理，以形成包括欧姆接触区和沟道区的有源层。
此外，阵列基板的制作方法还包括在形成了包括数据线60、源极61和漏极62的图形的衬底基板10上，形成钝化层70，以及在形成了钝化层70的衬底基板10上，形成包括透明电极90的图形，透明电极90位于数据线和公共电极21上方，从而对数据线60和像素电极50之间的电场具有屏蔽作用，能够有效减小数据线60和像素电极50之间的串扰。非显示区域内的透明电极90还可以通过过孔与其他导线层相连，从而将外部信号传输至各导线层。
此外，在阵列基板上形成各个膜层之前还包括清洗的步骤，以提高阵列基板的质量。
本发明实施例提供了一种阵列基板的制作方法，该阵列基板的制作方法包括：在衬底基板上形成包括栅线和公共电极的图形，形成栅极绝缘层，形成包括有源层的图形，形成包括像素电极的图形，像素电极和有源层同层设置，形成包括数据线、源极和漏极的图形。现有技术中阵列基板上的存储电容为像素电极、钝化层、栅极绝缘层和公共电极形成的电容，而采用本发明实施例的制作方法制作的阵列基板上的像素电极和公共电极之间的仅设置有栅极绝缘层，存储电容为像素电极、栅极绝缘层和公共电极形成的电容，从而能够有效提高存储电容，改善显示装置的显示效果。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (15)

1.一种阵列基板，包括衬底基板和依次位于所述衬底基板上的同层设置的栅线和公共电极、栅极绝缘层、有源层、同层设置的数据线、源极和漏极，其特征在于，
所述阵列基板还包括像素电极，所述像素电极和所述有源层同层设置。
2.根据权利要求1所述的阵列基板，其特征在于，
所述有源层包括金属氧化物半导体，所述像素电极为金属氧化物半导体经金属化处理形成，其中，用于形成所述像素电极的金属氧化物半导体与所述有源层包括的金属氧化物半导体的材料相同。
3.根据权利要求2所述的阵列基板，其特征在于，
所述有源层包括欧姆接触区和位于所述欧姆接触区之间的用于作为沟道的沟道区，所述阵列基板还包括位于所述沟道区上的刻蚀阻挡结构。
4.根据权利要求3所述的阵列基板，其特征在于，
所述源极和漏极分别设置在位于所述沟道区两侧的所述欧姆接触区上方。
5.根据权利要求4所述的阵列基板，其特征在于，
所述像素电极与靠近所述像素电极一侧的欧姆接触层之间间隔设置，且所述漏极还填充在所述间隔之间。
6.根据权利要求1所述的阵列基板，其特征在于，
所述公共电极包括与所述数据线平行的部分和与所述数据线垂直的部分。
7.根据权利要求1-6任一项所述的阵列基板，其特征在于，
还包括位于同层设置的所述数据线、所述源极和所述漏极上的钝化层以及位于所述钝化层上的透明电极，所述透明电极位于所述数据线和所述公共电极上方。
8.根据权利要求7所述的阵列基板，其特征在于，
非显示区域内的所述透明电极包括三个相互独立的透明导电部分，其中第一个透明导电部分通过过孔连接所述栅线，第二个透明导电部分通过过孔连接所述公共电极，第三个透明导电部分通过过孔连接所述数据线。
9.一种显示装置，其特征在于，包括如权利要求1-8任一项所述的阵列基板。
10.一种阵列基板的制作方法，其特征在于，包括：
在衬底基板上形成包括栅线和公共电极的图形；
在形成了包括所述栅线和所述公共电极的图形的所述衬底基板上，形成栅极绝缘层；
在形成了所述栅极绝缘层的所述衬底基板上，形成包括有源层和像素电极的图形，所述像素电极和所述有源层同层设置；
在形成了包括所述像素电极的图形的所述衬底基板上，形成包括数据线、源极和漏极的图形。
11.根据权利要求10所述的阵列基板的制作方法，其特征在于，
所述在形成了栅极绝缘层的所述衬底基板上，形成包括有源层和像素电极的图形，所述像素电极和所述有源层同层设置，包括：
在形成了所述栅极绝缘层的所述衬底基板上，沉积一层金属氧化物半导体层，经过构图工艺形成包括所述有源层和像素电极预结构的图形；
对所述像素电极预结构进行金属化处理，形成所述像素电极。
12.根据权利要求11所述的阵列基板的制作方法，其特征在于，
所述金属化处理包括在100-300℃还原性气氛中对所述像素电极预结构中的金属氧化物半导体处理30-120min。
13.根据权利要求12所述的阵列基板的制作方法，其特征在于，所述还原性气氛包括氢气或者含氢等离子体。
14.根据权利要求11所述的阵列基板的制作方法，其特征在于，
所述在形成了所述栅极绝缘层的所述衬底基板上，沉积一层金属氧化物半导体层，经过构图工艺形成包括所述有源层和像素电极预结构的图形，包括：
在形成了所述栅极绝缘层的所述衬底基板上，沉积一层金属氧化物半导体层；
在形成了所述金属氧化物半导体层的所述衬底基板上，形成一层刻蚀阻挡层；
在形成了所述刻蚀阻挡层的所述衬底基板上，涂覆一层光刻胶；
通过构图工艺，形成光刻胶完全保留区、光刻胶部分保留区和光刻胶完全去除区，所述光刻胶完全保留区对应于所述有源层中用于作为沟道的沟道区所在区域，所述光刻胶部分保留区对应于所述有源层中的欧姆接触区所在区域和所述像素电极所在区域，所述光刻胶完全去除区对应于其他区域；
去除无所述光刻胶覆盖区域的所述刻蚀阻挡层和所述金属氧化物半导体层；
去除所述光刻胶部分保留区，同时所述光刻胶完全保留区的厚度减薄；
将去除所述光刻胶部分保留区后暴露的所述刻蚀阻挡层去除；
剥离所述光刻胶，形成包括所述有源层、所述像素电极预结构和所述刻蚀阻挡结构的图形，所述刻蚀阻挡结构位于所述有源层中用于作为沟道的沟道区上；
所述对所述像素电极预结构进行金属化处理，形成所述像素电极的同时，对所述有源层中用于形成所述欧姆接触区的区域进行金属化处理，形成所述欧姆接触区，其中所述沟道区上覆盖有所述刻蚀阻挡结构，所述沟道区未被金属化处理，以形成包括所述欧姆接触区和所述沟道区的所述有源层。
15.根据权利要求10-14任一项所述的阵列基板的制作方法，其特征在于，还包括：
在形成了包括所述数据线、所述源极和所述漏极的图形的所述衬底基板上，形成钝化层；
在形成了所述钝化层的所述衬底基板上，形成包括透明电极的图形，所述透明电极位于所述数据线和所述公共电极上方。
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810375A (zh) * 2015-04-28 2015-07-29 合肥鑫晟光电科技有限公司 一种阵列基板及其制作方法和一种显示装置
CN104934448A (zh) * 2015-07-10 2015-09-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN105514120A (zh) * 2016-01-21 2016-04-20 京东方科技集团股份有限公司 一种双栅tft阵列基板及其制造方法和显示装置
CN105609563A (zh) * 2016-03-10 2016-05-25 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
CN106024909A (zh) * 2016-07-27 2016-10-12 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN106125415A (zh) * 2016-06-07 2016-11-16 友达光电股份有限公司 像素阵列以及像素结构
WO2017219411A1 (zh) * 2016-06-22 2017-12-28 深圳市华星光电技术有限公司 阵列基板及其制作方法
CN107665057A (zh) * 2016-07-31 2018-02-06 矽创电子股份有限公司 触控显示设备
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CN109671723A (zh) * 2018-12-20 2019-04-23 深圳市华星光电半导体显示技术有限公司 一种tft阵列基板
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CN112885881A (zh) * 2021-01-21 2021-06-01 昆山国显光电有限公司 显示面板及其制作方法、显示装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104299915B (zh) * 2014-10-21 2017-03-22 北京大学深圳研究生院 金属氧化物薄膜晶体管制备方法
CN106094366B (zh) * 2016-08-23 2019-02-01 深圳市华星光电技术有限公司 Ips型阵列基板的制作方法及ips型阵列基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459657A (zh) * 2002-04-04 2003-12-03 Nec液晶技术株式会社 平面内开关模式有源矩阵型液晶显示器件及其制造方法
US20110085121A1 (en) * 2009-10-08 2011-04-14 Hydis Technologies Co., Ltd. Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same
CN102790012A (zh) * 2012-07-20 2012-11-21 京东方科技集团股份有限公司 阵列基板的制造方法及阵列基板、显示装置
CN103077944A (zh) * 2013-01-18 2013-05-01 京东方科技集团股份有限公司 显示装置、阵列基板及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950012702A (ko) * 1993-10-21 1995-05-16 이헌조 박막트랜지스터 제조방법
KR100916603B1 (ko) * 2002-12-09 2009-09-14 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
CN101887898A (zh) * 2009-05-15 2010-11-17 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
TWI396314B (zh) * 2009-07-27 2013-05-11 Au Optronics Corp 畫素結構、有機電激發光顯示單元及其製造方法
CN102156368A (zh) * 2011-01-18 2011-08-17 京东方科技集团股份有限公司 薄膜晶体管液晶显示阵列基板及其制造方法
CN102629577B (zh) 2011-09-29 2013-11-13 京东方科技集团股份有限公司 一种tft阵列基板及其制造方法和显示装置
KR101960533B1 (ko) * 2011-11-10 2019-03-21 엘지디스플레이 주식회사 금속 산화물 반도체를 포함하는 박막 트랜지스터 기판 및 그 제조 방법
CN102810558B (zh) * 2012-08-07 2014-10-15 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制作方法和液晶显示器
CN103984170A (zh) * 2013-02-19 2014-08-13 上海天马微电子有限公司 阵列基板及其制造方法、液晶显示器
CN103474439B (zh) * 2013-09-26 2016-08-24 合肥京东方光电科技有限公司 一种显示装置、阵列基板及其制作方法
CN103605241A (zh) * 2013-11-21 2014-02-26 深圳市华星光电技术有限公司 一种液晶显示面板
CN103715094B (zh) * 2013-12-27 2017-02-01 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
CN103744245A (zh) * 2013-12-31 2014-04-23 深圳市华星光电技术有限公司 一种液晶显示器阵列基板及相应的液晶显示器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459657A (zh) * 2002-04-04 2003-12-03 Nec液晶技术株式会社 平面内开关模式有源矩阵型液晶显示器件及其制造方法
US20110085121A1 (en) * 2009-10-08 2011-04-14 Hydis Technologies Co., Ltd. Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same
CN102790012A (zh) * 2012-07-20 2012-11-21 京东方科技集团股份有限公司 阵列基板的制造方法及阵列基板、显示装置
CN103077944A (zh) * 2013-01-18 2013-05-01 京东方科技集团股份有限公司 显示装置、阵列基板及其制作方法

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810375A (zh) * 2015-04-28 2015-07-29 合肥鑫晟光电科技有限公司 一种阵列基板及其制作方法和一种显示装置
CN104810375B (zh) * 2015-04-28 2018-09-04 合肥鑫晟光电科技有限公司 一种阵列基板及其制作方法和一种显示装置
CN104934448B (zh) * 2015-07-10 2018-05-01 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104934448A (zh) * 2015-07-10 2015-09-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
US10629633B2 (en) 2015-07-10 2020-04-21 Boe Technology Group Co., Ltd. Array substrate and manufacturing method thereof, display device
US10388672B2 (en) 2015-07-10 2019-08-20 Boe Technology Group Co., Ltd. Array substrate and manufacturing method thereof, display device
CN105514120A (zh) * 2016-01-21 2016-04-20 京东方科技集团股份有限公司 一种双栅tft阵列基板及其制造方法和显示装置
US10050151B2 (en) 2016-01-21 2018-08-14 Boe Technology Group Co., Ltd. Dual-gate TFT array substrate and manufacturing method thereof, and display device
CN105514120B (zh) * 2016-01-21 2018-07-20 京东方科技集团股份有限公司 一种双栅tft阵列基板及其制造方法和显示装置
CN105609563B (zh) * 2016-03-10 2018-11-23 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
WO2017152488A1 (zh) * 2016-03-10 2017-09-14 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
CN105609563A (zh) * 2016-03-10 2016-05-25 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法
CN106125415B (zh) * 2016-06-07 2019-01-04 友达光电股份有限公司 像素阵列以及像素结构
CN106125415A (zh) * 2016-06-07 2016-11-16 友达光电股份有限公司 像素阵列以及像素结构
WO2017219411A1 (zh) * 2016-06-22 2017-12-28 深圳市华星光电技术有限公司 阵列基板及其制作方法
US10566461B2 (en) 2016-07-27 2020-02-18 Boe Technology Group Co., Ltd. Thin film transistor and method for manufacturing the same array substrate and display device
CN106024909A (zh) * 2016-07-27 2016-10-12 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN106024909B (zh) * 2016-07-27 2021-01-26 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN107665057B (zh) * 2016-07-31 2021-08-20 矽创电子股份有限公司 触控显示设备
CN107665057A (zh) * 2016-07-31 2018-02-06 矽创电子股份有限公司 触控显示设备
US10884527B2 (en) 2016-07-31 2021-01-05 Sitronix Technology Corp. Touch display device
CN111406307A (zh) * 2017-12-21 2020-07-10 德州仪器公司 在半导体晶片上制造厚氧化物特征的方法
CN108803161B (zh) * 2018-06-29 2021-07-09 上海天马微电子有限公司 显示面板、显示面板的制造方法以及显示装置
CN108803161A (zh) * 2018-06-29 2018-11-13 上海天马微电子有限公司 显示面板、显示面板的制造方法以及显示装置
CN109671723A (zh) * 2018-12-20 2019-04-23 深圳市华星光电半导体显示技术有限公司 一种tft阵列基板
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