CN105514120A - 一种双栅tft阵列基板及其制造方法和显示装置 - Google Patents

一种双栅tft阵列基板及其制造方法和显示装置 Download PDF

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CN105514120A
CN105514120A CN201610040520.4A CN201610040520A CN105514120A CN 105514120 A CN105514120 A CN 105514120A CN 201610040520 A CN201610040520 A CN 201610040520A CN 105514120 A CN105514120 A CN 105514120A
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tft array
array substrate
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public electrode
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牛菁
春晓改
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种双栅TFT阵列基板及其制造方法和显示装置，其中，制造方法包括：通过一次构图工艺形成公共电极和顶栅。本发明提供的双栅TFT阵列基板及其制造方法，通过一次构图工艺形成公共电极和顶栅，与传统的先制作公共电极，再制作顶栅的工艺过程相比，减少了构图工艺的次数，简化了工艺流程。同时，本发明中通过还原方法得到的双栅TFT阵列基板中的顶栅与底栅具有相近的电阻，保证了整个阵列基板的稳定性。

Description

一种双栅TFT阵列基板及其制造方法和显示装置
技术领域
本发明属于显示技术领域，具体而言，涉及一种双栅TFT阵列基板的制造方法、一种双栅TFT阵列基板和一种显示装置。
背景技术
在液晶显示领域中，薄膜晶体管的有源层一直使用稳定性能、加工性能等优异的硅系材料，硅系材料主要分为非晶硅和多晶硅，其中非晶硅材料迁移率很低，而多晶硅材料虽然有较高的迁移率，但用其制造的器件均匀性较差，良率低，单价高。所以近年来，将透明氧化物半导体膜用于沟道形成区来制造薄膜晶体管(TFT)等，并应用于电子器件及光器件的技术受到广泛关注。其中，利用以铟、镓、锌、氧为构成元素的非晶质In-Ga-Zn-O系材料(a-IGZO)的场效应型晶体管因其具有较高迁移率，较大开关比，而得到了最多的瞩目。但是IGZO是非晶结构，特性很不稳定，所以提高氧化物器件的稳定性非常重要。改善氧化物稳定性有很多方向，其中使用上下双栅极结构是一种非常有效的方法。
现有制备双栅结构的氧化物器件需要在传统的BCE(背沟道刻蚀)或者ESL(刻蚀阻挡层)结构TFT区域上方增加一层金属作为顶栅(Top-Gate)，该结构需要增加一次金属的图案化工艺和保护该层金属的绝缘层的沉积工艺。步骤繁多，工艺复杂。
发明内容
本发明所要解决的技术问题是如何简化双栅极薄膜晶体管阵列基板的工艺流程。
针对该技术问题，第一方面，本发明提供一种双栅TFT阵列基板的制造方法，包括：
通过一次构图工艺形成公共电极和顶栅。
优选地，在形成所述公共电极和顶栅前，还包括：
在基底上形成底栅和栅线；
在所述底栅和栅线上形成栅绝缘层；
在所述栅绝缘层上形成有源层；
在所述有源层上形成源极和漏极；
在所述源极和漏极上形成第一钝化层；
其中，所述公共电极和顶栅形成在所述第一钝化层上。
优选地，还包括：
在所述第一钝化层和所述栅绝缘层中与所述栅线对应的位置形成过孔，所述顶栅与所述栅线通过过孔连接。
优选地，还包括：
在所述公共电极和顶栅上形成第二钝化层，在所述第二钝化层上形成像素电极。
优选地，所述双栅TFT阵列基板的有源层为IGZO。
优选地，所述公共电极为透明金属氧化物，形成所述公共电极和顶栅的步骤包括：
对所述顶栅进行还原处理。
优选地，形成所述公共电极和顶栅的步骤包括：
形成透明金属氧化物层；
在所述透明金属氧化物层上形成光刻胶；
对所述光刻胶进行半灰阶掩膜曝光处理，通过显影，保留第一区域的光刻胶，部分保留第二区域的光刻胶，去除其他区域光刻胶；
蚀刻掉所述其他区域的透明金属氧化物层；
通过一次灰化工艺去除所述第二区域的光刻胶，减薄第一区域的光刻胶厚度；
对第二区域的透明金属氧化物层进行等离子还原气体表面处理，以析出所述第二区域的透明金属氧化物层中的金属，将所述第一区域的透明金属氧化物层作为所述公共电极，将所述第二区域的金属层作为所述顶栅。
第二方面，本发明提供了一种双栅TFT阵列基板，包括公共电极和顶栅，其特征在于所述公共电极与所述顶栅同层设置。
优选地，双栅TFT阵列基板还包括：
基底；
设置在所述基底上的底栅和栅线；
设置在所述底栅和栅线上的栅绝缘层；
设置在所述栅绝缘层上的有源层；
设置在所述有源层上的源极和漏极；
设置在所述源极和漏极上的第一钝化层；
其中，所述公共电极和顶栅形成在所述第一钝化层上。
优选地，双栅TFT阵列基板还包括：
设置在所述第一钝化层和所述栅绝缘层中与所述栅线对应位置的过孔，用于将所述顶栅与所述栅线连通。
优选地，双栅TFT阵列基板还包括：
设置在所述公共电极和顶栅上的第二钝化层；
设置在所述第二钝化层上的像素电极。
优选地，所述双栅TFT阵列基板的有源层为IGZO。
优选地，所述公共电极为透明氧化铟锡，所述顶栅由透明氧化铟锡经还原处理形成。
第三方面，本发明提供了一种显示装置，包括权利以上所述的双栅TFT阵列基板。
本发明提供的双栅TFT阵列基板及其制造方法，通过一次构图工艺形成公共电极和顶栅，与传统的先制作公共电极，再制作顶栅的工艺过程相比，减少了构图工艺的次数，简化了工艺流程。同时，本发明中通过还原方法得到的双栅TFT阵列基板中的顶栅与底栅具有相近的电阻，保证了整个阵列基板的稳定性。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明一个实施例的双栅TFT阵列基板的制造方法的流程示意图；
图2是本发明一个实施例的公共电极和顶栅制造方法的流程示意图；
图3是本发明一个实施例的双栅TFT阵列基板的结构示意图；
图4是图3中双栅TFT阵列基板沿着A-A方向的截面示意图；
图5是图3中双栅TFT阵列基板沿着B-B方向的截面示意图；
图6至图13是本发明一个实施例的双栅TFT阵列基板上的公共电极和顶栅的制作过程示意图；
附图标记说明：
1-公共电极；2-顶栅；3-像素电极；4-第二钝化层；5-第一钝化层；6-有源层；7-源漏极层；8-底栅或栅线；9-栅绝缘层；10-基底；11-透明金属氧化物层；12-光刻胶；A-A和B-B是视图方向示意。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示，根据本发明一个实施例的双栅TFT阵列基板的制造方法，包括：
S6：通过一次构图工艺形成公共电极和顶栅。
如图6至图13所提供的公共电极和顶栅的制造方法，在第一钝化层5上，沉积一层透明金属氧化物层11(例如氧化铟锡)，通过一次构图工艺，在该金属氧化物层上形成公共电极1和顶栅2。相比于传统的先形成公共电极1再形成顶栅2的方法，本实施例提供的方法减少了图案化工艺的次数，简化了工艺流程。
优选地，如图1和图3和图4所示，在形成所述公共电极和顶栅前，还包括：
S1：在基底10上形成底栅和栅线8；
S2：在该底栅和栅线8上形成栅绝缘层9；
S3：在栅绝缘层9上形成有源层6；
S4：在有源层6上形成源极和漏极7；
S5：在源极和漏极上形成第一钝化层5，
其中，公共电极1和顶栅2形成在第一钝化层5上。
如图3和图5所示，优选地，上述方法还包括：
在第一钝化层5和栅绝缘层9且与所述栅线8对应的位置形成过孔，顶栅2与栅线8通过该过孔连接。
由于栅线与底栅相连，在通过过孔将顶栅和底栅连接后，使得顶栅和底栅均与栅线相连，从而在栅线传输扫描信号时，一个像素单元中的顶栅和底栅能够同时接收到扫描信号，进而保证对有源层同时产生驱动作用。
优选地，上述方法还包括：
S7：在公共电极1和顶栅2上形成第二钝化层4，在第二钝化层4上形成像素电极3，如图3所示。本实施例适用于IPS(In-PlaneSwitching，平面转换)或者ADS(AdvancedSuperDimensionSwitch，高级超维场转换)结构的阵列基板。
优选地，双栅TFT阵列基板的有源层6为IGZO(透明铟镓锌氧化物)。
通过IGZO制作有源层，可以使得有源层具有较高的迁移率和较大的开关比，但是IGZO是非晶结构，特性不稳定，根据以上实施例所采用的双栅极结构，可以提高IGZO作为有源层的稳定性。
优选地，公共电极1为透明金属氧化物(例如透明氧化铟锡，ITO)，形成公共电极和顶栅的步骤包括：
对所述顶栅进行还原处理。
由于底栅和栅线由金属制成，本实施例中通过对透明金属氧化物还原可以得到金属作为顶栅，使得顶栅与底栅具有相近的电阻，从而保证通电时两栅极的电压相近，有源层受到对称的栅极作用，使得有源层更加稳定地导通源极和漏极。
另一方面，本实施例在对顶栅还原处理的过程中，并没有对公共电极进行还原处理，由于像素电极的材料为透明金属氧化物，而未还原处理的公共电极的材料也为透明金属氧化物，因此可以保证公共电极和像素电极由相同的材料形成，从而具有相同的电学特性，便于对公共电极和像素电极进行统一控制。
如图2所示，形成所述公共电极和顶栅的步骤包括：
S61：在第一钝化层5上形成透明金属氧化物层11，在透明金属氧化物层11上形成光刻胶12，如图6所示；
S62：对光刻胶12进行半灰阶掩膜曝光处理，通过显影保留第一区域的光刻胶12，部分保留第二区域的光刻胶12，去除其他区域光刻胶12，如图7和图8所示；
S63，蚀刻掉其他区域的透明金属氧化物层11，如图9所示；
S64：通过一次灰化工艺去除第二区域的光刻胶12，减薄第一区域的光刻胶12厚度，如图10所示；
S65：对第二区域的透明金属氧化物层进行等离子还原气体(例如H2)处理，以析出所述第二区域的透明金属氧化物层中的金属，例如透明金属氧化物为透明氧化铟锡，那么还原处理后可以得到金属铟，如图11和13所示，将第一区域的透明金属氧化物层作为公共电极1，将第二区域的金属层作为顶栅2；
S66，去除公共电极1上的光刻胶12。
通过半灰阶掩膜曝光工艺可以容易地在第二区域得到暴露的透明金属氧化物层，在第一区域得到未暴露的透明金属氧化物层，从而可以仅对第二区域的透明金属氧化物层进行还原处理，而保持第一区域的透明金属氧化物层不变。
如图4和图5所示，根据本发明一个实施例的双栅TFT阵列基板包括公共电极与顶栅，公共电极1与顶栅2同层设置。
进一步地，双栅TFT阵列基板还包括：
基底10；
设置在基底10上的底栅和栅线8；
设置在底栅和栅线8上的栅绝缘层9；
设置在栅绝缘层9上的有源层6；
设置在有源层6上的源漏极层7，源漏极层7上形成源极和漏极，
设置在源漏极层7上的第一钝化层5，
其中，公共电极1和顶栅2形成在第一钝化层5上。
进一步地，双栅TFT阵列基板还包括：
设置在第一钝化层5和栅绝缘层9上且与所述栅线8对应位置的过孔，用于将顶栅2与栅线8连通。
进一步地，双栅TFT阵列基板还包括：
设置在公共电极1和顶栅2上的第二钝化层4；
设置在第二钝化层4上的像素电极3。
进一步地，双栅TFT阵列基板的有源层为IGZO。
进一步地，公共电极1为氧化铟锡，顶栅2为对氧化铟锡还原处理得到的金属铟。
进一步地，公共电极1为透明氧化铟锡，顶栅2由透明氧化铟锡经还原处理形成。
其中，上述流程所采用的形成工艺包括：沉积、溅射等成膜工艺和刻蚀等构图工艺。
根据本发明一个实施的显示装置，包括上述双栅TFT阵列基板。
需要说明的是，本实施例中的显示装置可以为：电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上结合附图详细说明了本发明的技术方案，考虑到现有技术中，在制造TFT阵列基板时，先制造公共电极再制造顶栅，制造过程中的工艺繁琐。通过本发明的技术方案，通过一次构图工艺在形成公共电极时形成顶栅，与传统的先制作公共电极，再制作顶栅的工艺过程相比，减少了构图工艺的次数，简化了工艺流程。同时，本发明中通过还原方法得到的双栅TFT阵列基板中的顶栅与底栅具有相近的电阻，保证了整个阵列基板的稳定性。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间惟一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (14)

1.一种双栅TFT阵列基板的制造方法，其特征在于，包括：
通过一次构图工艺形成公共电极和顶栅。
2.根据权利要求1所述的双栅TFT阵列基板的制造方法，其特征在于，在形成所述公共电极和顶栅前，还包括：
在基底上形成底栅和栅线；
在所述底栅和栅线上形成栅绝缘层；
在所述栅绝缘层上形成有源层；
在所述有源层上形成源极和漏极；
在所述源极和漏极上形成第一钝化层；
其中，所述公共电极和顶栅形成在所述第一钝化层上。
3.根据权利要求2所述的双栅TFT阵列基板的制造方法，其特征在于，还包括：
在所述第一钝化层和所述栅绝缘层中与所述栅线对应的位置形成过孔，所述顶栅与所述栅线通过过孔连接。
4.根据权利要求1所述的双栅TFT阵列基板的制造方法，其特征在于，还包括：
在所述公共电极和顶栅上形成第二钝化层，在所述第二钝化层上形成像素电极。
5.根据权利要求1所述的双栅TFT阵列基板的制造方法，其特征在于，所述双栅TFT阵列基板的有源层为IGZO。
6.根据权利要求1至5中任一项权利要求所述的双栅TFT阵列基板的制造方法，其特征在于，所述公共电极为透明金属氧化物，形成所述公共电极和顶栅的步骤包括：
对所述顶栅进行还原处理。
7.根据权利要求6所述的双栅TFT阵列基板的制造方法，其特征在于，形成所述公共电极和顶栅的步骤包括：
形成透明金属氧化物层；
在所述透明金属氧化物层上形成光刻胶；
对所述光刻胶进行半灰阶掩膜曝光处理，通过显影，保留第一区域的光刻胶，部分保留第二区域的光刻胶，去除其他区域光刻胶；
蚀刻掉所述其他区域的透明金属氧化物层；
通过一次灰化工艺去除所述第二区域的光刻胶，减薄所述第一区域的光刻胶厚度；
对第二区域的透明金属氧化物层进行等离子还原气体表面处理，以析出所述第二区域的透明金属氧化物层中的金属，将所述第一区域的透明金属氧化物层作为所述公共电极，将所述第二区域的金属层作为所述顶栅。
8.一种双栅TFT阵列基板，包括公共电极和顶栅，其特征在于，所述公共电极与所述顶栅同层设置。
9.根据权利要求8所述的双栅TFT阵列基板，其特征在于，还包括：
基底；
设置在所述基底上的底栅和栅线；
设置在所述底栅和栅线上的栅绝缘层；
设置在所述栅绝缘层上的有源层；
设置在所述有源层上的源极和漏极；
设置在所述源极和漏极上的第一钝化层；
其中，所述公共电极和顶栅形成在所述第一钝化层上。
10.根据权利要求9所述的双栅TFT阵列基板，其特征在于，还包括：
设置在所述第一钝化层和所述栅绝缘层中与所述栅线对应位置的过孔，用于将所述顶栅与所述栅线连通。
11.根据权利要求8所述的双栅TFT阵列基板，其特征在于，还包括：
设置在所述公共电极和顶栅上的第二钝化层；
设置在所述第二钝化层上的像素电极。
12.根据权利要求8所述的双栅TFT阵列基板，其特征在于，所述双栅TFT阵列基板的有源层为IGZO。
13.根据权利要求8至12中任一项所述的双栅TFT阵列基板，其特征在于，所述公共电极为透明氧化铟锡，所述顶栅由透明氧化铟锡经还原处理形成。
14.一种显示装置，其特征在于，包括权利要求8至13中任一项所述的双栅TFT阵列基板。
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US11049975B2 (en) 2017-01-05 2021-06-29 Boe Technology Group Co., Ltd. Dual-gate thin film transistor, manufacturing method thereof, array substrate and display device
CN108183125A (zh) * 2017-12-28 2018-06-19 武汉华星光电半导体显示技术有限公司 有机发光二极管显示面板
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