CN104185900B - 功率模块用基板、自带散热器的功率模块用基板以及功率模块 - Google Patents

功率模块用基板、自带散热器的功率模块用基板以及功率模块 Download PDF

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CN104185900B
CN104185900B CN201380015211.6A CN201380015211A CN104185900B CN 104185900 B CN104185900 B CN 104185900B CN 201380015211 A CN201380015211 A CN 201380015211A CN 104185900 B CN104185900 B CN 104185900B
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metal level
power module
circuit layer
module substrate
radiator
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CN104185900A (zh
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长友义幸
寺崎伸幸
黑光祥郎
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/012—Soldering with the use of hot gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0012—Brazing heat exchangers
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
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    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
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    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
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  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Dispersion Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
CN201380015211.6A 2012-03-30 2013-03-29 功率模块用基板、自带散热器的功率模块用基板以及功率模块 Active CN104185900B (zh)

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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6111764B2 (ja) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5672324B2 (ja) 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
US9969654B2 (en) 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
JP6384112B2 (ja) 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6299442B2 (ja) * 2014-06-03 2018-03-28 三菱マテリアル株式会社 パワーモジュール
DE102014211562A1 (de) * 2014-06-17 2015-12-17 Robert Bosch Gmbh Halbleiteranordnung mit einer Wärmesenke
JP5954371B2 (ja) * 2014-08-05 2016-07-20 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法
JP6459427B2 (ja) * 2014-11-20 2019-01-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法、及び、接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク
CN104456247B (zh) * 2014-11-28 2017-09-05 宁波市柯玛士太阳能科技有限公司 一种条形灯
WO2016121159A1 (ja) * 2015-01-26 2016-08-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
US10109555B2 (en) 2015-02-02 2018-10-23 Kabushiki Kaisha Toshiba Silicon nitride circuit board and electronic component module using the same
WO2016158020A1 (ja) * 2015-04-01 2016-10-06 富士電機株式会社 半導体モジュール
JP2017063127A (ja) * 2015-09-25 2017-03-30 三菱マテリアル株式会社 発光モジュール用基板、発光モジュール、冷却器付き発光モジュール用基板、および発光モジュール用基板の製造方法
CN205491580U (zh) * 2015-11-30 2016-08-17 比亚迪股份有限公司 Igbt散热模组以及具有其的igbt模组
EP3486942B1 (en) * 2016-07-14 2025-04-02 Kabushiki Kaisha Toshiba, Inc. Ceramic circuit board and semiconductor module
JP6776953B2 (ja) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
KR102422070B1 (ko) * 2017-03-29 2022-07-15 미쓰비시 마테리알 가부시키가이샤 히트 싱크가 부착된 절연 회로 기판의 제조 방법
US11167363B2 (en) * 2017-05-10 2021-11-09 Board Of Trustees Of Michigan State University Brazing methods using porous interlayers and related articles
CN107819066B (zh) * 2017-10-26 2018-10-16 成都万士达瓷业有限公司 一种低氧铜烧结dbc半导体热电基片的生产方法
CN111433910B (zh) * 2017-12-13 2023-10-10 三菱电机株式会社 半导体装置以及半导体装置的制造方法
JP6911805B2 (ja) * 2018-03-27 2021-07-28 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
US11297745B2 (en) * 2018-03-28 2022-04-05 The Board Of Trustees Of The University Of Illinois Active thermal management system for electronic devices and method of achieving device-to-device isothermalization
JP7143659B2 (ja) * 2018-07-18 2022-09-29 三菱マテリアル株式会社 金属ベース基板
JP7167642B2 (ja) * 2018-11-08 2022-11-09 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
CN112823073B (zh) * 2018-11-28 2022-07-05 三菱综合材料株式会社 接合体、带散热器的绝缘电路基板及散热器
JP7363613B2 (ja) * 2020-03-13 2023-10-18 三菱マテリアル株式会社 ヒートシンク一体型絶縁回路基板
CN115039217A (zh) * 2020-03-18 2022-09-09 三菱综合材料株式会社 绝缘电路基板
CN111755413A (zh) * 2020-07-07 2020-10-09 深圳基本半导体有限公司 一种高导热率碳化硅器件封装结构及方法
JP2023070910A (ja) * 2021-11-10 2023-05-22 株式会社レゾナック 半導体装置、半導体装置の製造方法
CN114918572B (zh) * 2022-07-19 2022-11-04 北京理工大学 一种铝-铝的瞬态液相连接方法
EP4371691A4 (en) * 2022-09-27 2024-10-16 Jiangsu Contemporary Amperex Technology Limited WELDING BASE, WELDING UNIT, AND ULTRASONIC WELDING MACHINE

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1832157A (zh) * 2005-03-08 2006-09-13 株式会社日立制作所 半导体功率组件
CN101061580A (zh) * 2005-09-15 2007-10-24 三菱麻铁里亚尔株式会社 绝缘电路基板及带冷却槽部的绝缘电路基板
CN101218671A (zh) * 2005-07-07 2008-07-09 株式会社丰田自动织机 散热装置及功率模块
JP2012023404A (ja) * 2011-10-28 2012-02-02 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール
JP2012064801A (ja) * 2010-09-16 2012-03-29 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板、パワーモジュール及びヒートシンク付パワーモジュール用基板の製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162756A (ja) 1990-10-26 1992-06-08 Toshiba Corp 半導体モジュール
JP3171234B2 (ja) 1997-03-26 2001-05-28 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JP4756200B2 (ja) 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 金属セラミックス回路基板
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP3676268B2 (ja) * 2001-08-01 2005-07-27 株式会社日立製作所 伝熱構造体及び半導体装置
JP2003197826A (ja) 2001-12-26 2003-07-11 Toshiba Corp セラミックス回路基板およびそれを用いた半導体モジュール
JP4206915B2 (ja) * 2002-12-27 2009-01-14 三菱マテリアル株式会社 パワーモジュール用基板
JP4496404B2 (ja) * 2003-10-10 2010-07-07 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
US7532481B2 (en) * 2004-04-05 2009-05-12 Mitsubishi Materials Corporation Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material
JP5061442B2 (ja) 2005-09-15 2012-10-31 三菱マテリアル株式会社 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2007180457A (ja) * 2005-12-28 2007-07-12 Toyota Industries Corp 半田付け方法及び半導体モジュールの製造方法並びに半田付け装置
EP2006895B1 (en) * 2006-03-08 2019-09-18 Kabushiki Kaisha Toshiba Electronic component module
JP4893096B2 (ja) 2006-05-01 2012-03-07 日立金属株式会社 回路基板およびこれを用いた半導体モジュール
JP4629016B2 (ja) * 2006-10-27 2011-02-09 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法並びにパワーモジュール
JP4978221B2 (ja) 2007-02-05 2012-07-18 三菱マテリアル株式会社 回路基板の製造装置及び製造方法、その製造方法に用いられるクッションシート
JP2008227336A (ja) * 2007-03-15 2008-09-25 Hitachi Metals Ltd 半導体モジュール、これに用いられる回路基板
CN101971329B (zh) 2008-03-17 2012-11-21 三菱综合材料株式会社 带散热片的功率模块用基板及其制造方法、以及带散热片的功率模块、功率模块用基板
DE102008000825A1 (de) * 2008-03-26 2009-10-01 Robert Bosch Gmbh Keramik-Metall-Verbundsubstrat
JP4807378B2 (ja) 2008-05-16 2011-11-02 三菱マテリアル株式会社 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP4567773B2 (ja) 2008-07-18 2010-10-20 三菱電機株式会社 電力用半導体装置
JP2010129867A (ja) 2008-11-28 2010-06-10 Mitsubishi Electric Corp 電力用半導体装置
JP5245989B2 (ja) 2009-03-31 2013-07-24 三菱マテリアル株式会社 パワーモジュール用基板の製造方法およびヒートシンク付パワーモジュール用基板の製造方法
EP2315242A1 (en) * 2009-10-23 2011-04-27 ABB Technology AG Circuit arrangement and manufacturing method thereof
JP3171234U (ja) 2011-08-09 2011-10-20 正宜 田辺 簡易温室

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1832157A (zh) * 2005-03-08 2006-09-13 株式会社日立制作所 半导体功率组件
CN101218671A (zh) * 2005-07-07 2008-07-09 株式会社丰田自动织机 散热装置及功率模块
CN101061580A (zh) * 2005-09-15 2007-10-24 三菱麻铁里亚尔株式会社 绝缘电路基板及带冷却槽部的绝缘电路基板
JP2012064801A (ja) * 2010-09-16 2012-03-29 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板、パワーモジュール及びヒートシンク付パワーモジュール用基板の製造方法
JP2012023404A (ja) * 2011-10-28 2012-02-02 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール

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