IN2014DN08029A - - Google Patents

Info

Publication number
IN2014DN08029A
IN2014DN08029A IN8029DEN2014A IN2014DN08029A IN 2014DN08029 A IN2014DN08029 A IN 2014DN08029A IN 8029DEN2014 A IN8029DEN2014 A IN 8029DEN2014A IN 2014DN08029 A IN2014DN08029 A IN 2014DN08029A
Authority
IN
India
Prior art keywords
thickness
circuit layer
metal layer
insulating substrate
layer
Prior art date
Application number
Inventor
Yoshiyuki Nagatomo
Nobuyuki Terasaki
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DN08029A publication Critical patent/IN2014DN08029A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/012—Soldering with the use of hot gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0012—Brazing heat exchangers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/128—The active component for bonding being silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Abstract

This power module substrate (10) is provided with an insulating substrate (11), a circuit layer (12) formed on one surface of the insulating substrate (11) ,and a metal layer (13) formed on the other surface of the insulating substrate ( 11). The circuit layer (12) is composed of copper or a copper alloy, and an electronic component (3) is mounted on one surface of the circuit layer (12) . The metal layer (13) is configured by joining together aluminum plates comprising aluminum or an aluminum alloy. The thickness (ti) of the circuit layer (12) is set within a range of 0.1 mm ≤ ti ≤ 0.6 mm, and the thickness (t2) of the metal layer (13) is set within a range of 0.5 mm ≤ t2 ≤ 6 mm. The relationship between the thickness (ti) of the circuit layer (12) and the thickness (t2) of the metal layer (13) is established such that ti < t2.
IN8029DEN2014 2012-03-30 2013-03-29 IN2014DN08029A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012083246 2012-03-30
JP2013046960A JP2013229579A (en) 2012-03-30 2013-03-08 Substrate for power module, substrate for power module having heat sink, and power module
PCT/JP2013/059498 WO2013147142A1 (en) 2012-03-30 2013-03-29 Power module substrate, power module substrate with heat sink, and power module

Publications (1)

Publication Number Publication Date
IN2014DN08029A true IN2014DN08029A (en) 2015-05-01

Family

ID=49260384

Family Applications (1)

Application Number Title Priority Date Filing Date
IN8029DEN2014 IN2014DN08029A (en) 2012-03-30 2013-03-29

Country Status (8)

Country Link
US (1) US9480144B2 (en)
EP (1) EP2833399B1 (en)
JP (1) JP2013229579A (en)
KR (1) KR102097177B1 (en)
CN (1) CN104185900B (en)
IN (1) IN2014DN08029A (en)
TW (1) TWI591774B (en)
WO (1) WO2013147142A1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5672324B2 (en) 2013-03-18 2015-02-18 三菱マテリアル株式会社 Manufacturing method of joined body and manufacturing method of power module substrate
JP6111764B2 (en) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 Power module substrate manufacturing method
US9969654B2 (en) * 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
JP6384112B2 (en) 2014-04-25 2018-09-05 三菱マテリアル株式会社 Power module substrate and power module substrate with heat sink
JP6299442B2 (en) * 2014-06-03 2018-03-28 三菱マテリアル株式会社 Power module
DE102014211562A1 (en) * 2014-06-17 2015-12-17 Robert Bosch Gmbh Semiconductor arrangement with a heat sink
JP5954371B2 (en) 2014-08-05 2016-07-20 三菱マテリアル株式会社 Power module substrate and manufacturing method thereof
JP6459427B2 (en) * 2014-11-20 2019-01-30 三菱マテリアル株式会社 Manufacturing method of power module substrate with heat sink, and joined body, power module substrate with heat sink, heat sink
CN104456247B (en) * 2014-11-28 2017-09-05 宁波市柯玛士太阳能科技有限公司 A kind of strip light
DE112015006049T5 (en) * 2015-01-26 2017-10-12 Mitsubishi Electric Corporation SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
JP6692299B2 (en) 2015-02-02 2020-05-13 株式会社東芝 Silicon nitride circuit board and electronic component module using the same
JPWO2016158020A1 (en) * 2015-04-01 2017-07-27 富士電機株式会社 Semiconductor module
JP2017063127A (en) * 2015-09-25 2017-03-30 三菱マテリアル株式会社 Substrate for light-emitting module, light-emitting module, substrate for light-emitting module with cooler, and manufacturing method of substrate for light-emitting module
CN205491580U (en) * 2015-11-30 2016-08-17 比亚迪股份有限公司 IGBT heat dissipation module and have its IGBT module
JP7048493B2 (en) * 2016-07-14 2022-04-05 株式会社東芝 Ceramic circuit boards and semiconductor modules
JP6776953B2 (en) 2017-03-07 2020-10-28 三菱マテリアル株式会社 Board for power module with heat sink
EP3605601B1 (en) * 2017-03-29 2023-09-13 Mitsubishi Materials Corporation Method for producing insulated circuit board with heat sink
US11167363B2 (en) * 2017-05-10 2021-11-09 Board Of Trustees Of Michigan State University Brazing methods using porous interlayers and related articles
CN107819066B (en) * 2017-10-26 2018-10-16 成都万士达瓷业有限公司 A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates
CN111433910B (en) * 2017-12-13 2023-10-10 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device
JP6911805B2 (en) * 2018-03-27 2021-07-28 三菱マテリアル株式会社 Manufacturing method of insulated circuit board with heat sink
US11297745B2 (en) * 2018-03-28 2022-04-05 The Board Of Trustees Of The University Of Illinois Active thermal management system for electronic devices and method of achieving device-to-device isothermalization
JP7143659B2 (en) * 2018-07-18 2022-09-29 三菱マテリアル株式会社 metal base substrate
JP7167642B2 (en) * 2018-11-08 2022-11-09 三菱マテリアル株式会社 Joined body, insulated circuit board with heat sink, and heat sink
WO2020111107A1 (en) * 2018-11-28 2020-06-04 三菱マテリアル株式会社 Bonded body, heat sink-attached insulated circuit board, and heat sink
CN111755413A (en) * 2020-07-07 2020-10-09 深圳基本半导体有限公司 High-thermal-conductivity silicon carbide device packaging structure and method
CN114918572B (en) * 2022-07-19 2022-11-04 北京理工大学 Transient liquid phase connection method of aluminum and aluminum

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162756A (en) 1990-10-26 1992-06-08 Toshiba Corp Semiconductor module
JP3171234B2 (en) 1997-03-26 2001-05-28 三菱マテリアル株式会社 Ceramic circuit board with heat sink
JP4756200B2 (en) 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 Metal ceramic circuit board
JP2002203942A (en) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd Power semiconductor module
JP3676268B2 (en) * 2001-08-01 2005-07-27 株式会社日立製作所 Heat transfer structure and semiconductor device
JP2003197826A (en) 2001-12-26 2003-07-11 Toshiba Corp Ceramic circuit board and semiconductor module using the same
JP4206915B2 (en) * 2002-12-27 2009-01-14 三菱マテリアル株式会社 Power module substrate
JP4496404B2 (en) * 2003-10-10 2010-07-07 Ｄｏｗａメタルテック株式会社 Metal-ceramic bonding substrate and manufacturing method thereof
KR20110124372A (en) * 2004-04-05 2011-11-16 미쓰비시 마테리알 가부시키가이샤 Al/aln joint material, base plate for power module, power module and process for producing al/aln joint material
JP2006253183A (en) 2005-03-08 2006-09-21 Hitachi Ltd Semiconductor power module
JP4617209B2 (en) 2005-07-07 2011-01-19 株式会社豊田自動織機 Heat dissipation device
JP2007081200A (en) 2005-09-15 2007-03-29 Mitsubishi Materials Corp Insulated circuit board with cooling sink section
JP5061442B2 (en) * 2005-09-15 2012-10-31 三菱マテリアル株式会社 Insulated circuit board and insulated circuit board with cooling sink
JP2007180457A (en) * 2005-12-28 2007-07-12 Toyota Industries Corp Soldering method, method of manufacturing semiconductor module, and soldering apparatus
EP2006895B1 (en) * 2006-03-08 2019-09-18 Kabushiki Kaisha Toshiba Electronic component module
JP4893096B2 (en) 2006-05-01 2012-03-07 日立金属株式会社 Circuit board and semiconductor module using the same
JP4629016B2 (en) * 2006-10-27 2011-02-09 三菱マテリアル株式会社 Power module substrate with heat sink, method for manufacturing power module substrate with heat sink, and power module
JP4978221B2 (en) 2007-02-05 2012-07-18 三菱マテリアル株式会社 Circuit board manufacturing apparatus and manufacturing method, and cushion sheet used in the manufacturing method
JP2008227336A (en) * 2007-03-15 2008-09-25 Hitachi Metals Ltd Semiconductor module, circuit board used therefor
KR101610973B1 (en) 2008-03-17 2016-04-08 미쓰비시 마테리알 가부시키가이샤 Substrate for power module with heat sink and method for producing the same, power module with heat sink, and substrate for power module
DE102008000825A1 (en) * 2008-03-26 2009-10-01 Robert Bosch Gmbh Insulating material metal composite substrate, particularly ceramic metal composite substrate, has insulating layer, metal conductive paths, and power elements
JP4807378B2 (en) 2008-05-16 2011-11-02 三菱マテリアル株式会社 Power module substrate, power module, and method of manufacturing power module substrate
JP4567773B2 (en) * 2008-07-18 2010-10-20 三菱電機株式会社 Power semiconductor device
JP2010129867A (en) 2008-11-28 2010-06-10 Mitsubishi Electric Corp Power semiconductor device
JP5245989B2 (en) * 2009-03-31 2013-07-24 三菱マテリアル株式会社 Method for manufacturing power module substrate and method for manufacturing power module substrate with heat sink
EP2315242A1 (en) * 2009-10-23 2011-04-27 ABB Technology AG Circuit arrangement and manufacturing method thereof
JP5577980B2 (en) * 2010-09-16 2014-08-27 三菱マテリアル株式会社 Power module substrate with heat sink, power module, and method for manufacturing power module substrate with heat sink
JP3171234U (en) 2011-08-09 2011-10-20 正宜 田辺 Simple greenhouse
JP5218621B2 (en) * 2011-10-28 2013-06-26 日立金属株式会社 Circuit board and semiconductor module using the same

Also Published As

Publication number Publication date
US20150034367A1 (en) 2015-02-05
JP2013229579A (en) 2013-11-07
CN104185900A (en) 2014-12-03
EP2833399A4 (en) 2015-12-30
EP2833399A1 (en) 2015-02-04
KR102097177B1 (en) 2020-04-03
TWI591774B (en) 2017-07-11
WO2013147142A1 (en) 2013-10-03
CN104185900B (en) 2017-03-15
US9480144B2 (en) 2016-10-25
EP2833399B1 (en) 2019-10-09
KR20140147090A (en) 2014-12-29
TW201405721A (en) 2014-02-01

Similar Documents

Publication Publication Date Title
IN2014DN08029A (en)
TW201613037A (en) Substrate for power modules, substrate with heat sink for power modules and power module with heat sink
WO2012015982A3 (en) Electronics substrate with enhanced direct bonded metal
IN2014DN08074A (en)
PH12016500404A1 (en) Surface-treated metal material, metal foil with carrier, connector, terminal, laminate, shielding tape, shielding material, printed wiring board, processed metal member, electronic device, and method for manufacturing printed wiring board
IN2014DN08075A (en)
WO2011097089A3 (en) Recessed semiconductor substrates
WO2011159417A3 (en) Thermal interface material assemblies, and related methods
MX2013013056A (en) Disk having an electric connecting element.
IN2012DN03163A (en)
MY176763A (en) Carrier-attached copper foil, laminate, method for manufacturing printed- wiring board and method for manufacturing electronic device
MY186451A (en) Copper foil provided with carrier, laminate, printed wiring board, electronic device, and method for fabricating printed wiring board
MY183691A (en) Pane with electrical connection element and compensator plates
MY184588A (en) Disk having an electrical connection element
EP3026144A4 (en) Surface-treated copper foil, copper foil with carrier, substrate, resin substrate, printed circuit board, copper-clad laminate, and method for manufacturing printed circuit board
EP2608408A3 (en) Circuit substrate for duplexers
WO2009143835A3 (en) Heat transfer device for double-sided cooling of a semiconductor component
WO2014184102A3 (en) Method for depositing thick copper layers onto sintered materials
IN2012DN02839A (en)
WO2015043969A3 (en) Diffusion soldering method using the formation of a diffusion zone as a solder connection, and electronic assembly with such a solder connection
TW201612461A (en) Heat dispersion structure and manufacturing method thereof
WO2009043670A3 (en) Electronic circuit composed of sub-circuits and method for producing the same
GB201214295D0 (en) Thermoelectric module and method for producing a thermoelectric module
WO2012085472A3 (en) Printed circuit board with an insulated metal substrate
WO2012099466A3 (en) Method for manufacturing an electronic device by electrodeposition from an ionic liquid