JPH04162756A - Semiconductor module - Google Patents

Semiconductor module

Info

Publication number
JPH04162756A
JPH04162756A JP28978190A JP28978190A JPH04162756A JP H04162756 A JPH04162756 A JP H04162756A JP 28978190 A JP28978190 A JP 28978190A JP 28978190 A JP28978190 A JP 28978190A JP H04162756 A JPH04162756 A JP H04162756A
Authority
JP
Japan
Prior art keywords
copper layer
heat
heat sink
semiconductor
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28978190A
Other languages
Japanese (ja)
Inventor
Yutaka Komorida
Hideki Sato
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28978190A priority Critical patent/JPH04162756A/en
Publication of JPH04162756A publication Critical patent/JPH04162756A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PURPOSE:To enhance the heat cycle characteristics by relieving a thermal stress caused by the difference in the coefficient of thermal expansion between a copper layer and a heat sink by bonding an aluminum nitride substrate to the heat sink with an organic-based heat-resistant adhesive through a copper layer directly bonded to the aluminum nitride substrate. CONSTITUTION:Copper layers 2 and 3 are respectively bonded directly to both the main faces of an aluminum nitride substrate 1, and the copper layer 2 is used for mounting a semiconductor and has a required circuit pattern. Also the copper layer 3 becomes the junction with a heat sink. A semiconductor device 5 is bonded with a solder layer 6 and a semiconductor device 5 is mounted on the copper layer 2 at the mounting side, and the semiconductor device 5 is electrically connected to the circuit of the copper layer at the mounting side with bonding wires 7 and others. Also, the copper layer at the bonding side is bonded to a heat radiating container 8 functioning as a heat sink with an organic-based heat-resistant adhesive 9. By doing this, the thermal stress due to the difference in the coefficient of thermal expansion between the copper layer and heat sink can be relieved and the heat cycle characteristics can be enhanced.
JP28978190A 1990-10-26 1990-10-26 Semiconductor module Pending JPH04162756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28978190A JPH04162756A (en) 1990-10-26 1990-10-26 Semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28978190A JPH04162756A (en) 1990-10-26 1990-10-26 Semiconductor module

Publications (1)

Publication Number Publication Date
JPH04162756A true JPH04162756A (en) 1992-06-08

Family

ID=17747683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28978190A Pending JPH04162756A (en) 1990-10-26 1990-10-26 Semiconductor module

Country Status (1)

Country Link
JP (1) JPH04162756A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257248A (en) * 1991-02-12 1992-09-11 Mitsubishi Electric Corp Hybrid integrated circuit apparatus
WO1997030494A1 (en) * 1996-02-14 1997-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heat sink including a surface on which an electronic component can be mounted
US5701032A (en) * 1994-10-17 1997-12-23 W. L. Gore & Associates, Inc. Integrated circuit package
JP2008145807A (en) * 2006-12-12 2008-06-26 Oki Electric Ind Co Ltd Fiber bragg grating device
CN102254877A (en) * 2011-07-08 2011-11-23 南京银茂微电子制造有限公司 Power module without metal baseplate
WO2013024813A1 (en) 2011-08-12 2013-02-21 三菱マテリアル株式会社 Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module
WO2013147142A1 (en) 2012-03-30 2013-10-03 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, and power module
WO2014115677A1 (en) 2013-01-22 2014-07-31 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, and power module with heat sink
WO2014157112A1 (en) 2013-03-29 2014-10-02 三菱マテリアル株式会社 Substrate for power modules, substrate with heat sink for power modules, and power module
WO2015046280A1 (en) 2013-09-30 2015-04-02 三菱マテリアル株式会社 Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module
KR20160120285A (en) 2014-02-12 2016-10-17 미쓰비시 마테리알 가부시키가이샤 Copper/ceramic bond and power module substrate
US9735085B2 (en) 2014-03-20 2017-08-15 Mitsubishi Materials Corporation Bonded body, power module substrate, power module and method for producing bonded body
JP2018037678A (en) * 2014-11-20 2018-03-08 日本精工株式会社 Heat dissipating board
WO2018159590A1 (en) 2017-02-28 2018-09-07 三菱マテリアル株式会社 Copper/ceramic joined body insulated circuit board, method for producing copper/ceramic joined body, and method for producing insulated circuit board
WO2019082970A1 (en) 2017-10-27 2019-05-02 三菱マテリアル株式会社 Bonded body and insulated circuit board
WO2019146464A1 (en) 2018-01-25 2019-08-01 三菱マテリアル株式会社 Copper/ceramic bonded body, insulating circuit board, copper/ceramic bonded body production method, and insulating circuit board production method
DE102018106176A1 (en) * 2018-03-16 2019-09-19 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device with a metal plate and with a arranged on the metal plate substrate
KR20190123727A (en) 2017-02-28 2019-11-01 미쓰비시 마테리알 가부시키가이샤 Copper / ceramic bonded body, insulated circuit board, and manufacturing method of copper / ceramic bonded body, manufacturing method of insulated circuit board

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258664A (en) * 1985-09-09 1987-03-14 Toshiba Corp Heat-dissipasive insulation substrate
JPS63217648A (en) * 1987-03-06 1988-09-09 Hitachi Ltd Heat dissipation structure of heating element
JPS63249357A (en) * 1987-04-04 1988-10-17 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258664A (en) * 1985-09-09 1987-03-14 Toshiba Corp Heat-dissipasive insulation substrate
JPS63217648A (en) * 1987-03-06 1988-09-09 Hitachi Ltd Heat dissipation structure of heating element
JPS63249357A (en) * 1987-04-04 1988-10-17 Hitachi Ltd Semiconductor device

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257248A (en) * 1991-02-12 1992-09-11 Mitsubishi Electric Corp Hybrid integrated circuit apparatus
US5701032A (en) * 1994-10-17 1997-12-23 W. L. Gore & Associates, Inc. Integrated circuit package
WO1997030494A1 (en) * 1996-02-14 1997-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heat sink including a surface on which an electronic component can be mounted
JP2008145807A (en) * 2006-12-12 2008-06-26 Oki Electric Ind Co Ltd Fiber bragg grating device
CN102254877A (en) * 2011-07-08 2011-11-23 南京银茂微电子制造有限公司 Power module without metal baseplate
WO2013024813A1 (en) 2011-08-12 2013-02-21 三菱マテリアル株式会社 Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module
US9066433B2 (en) 2011-08-12 2015-06-23 Mitsubishi Materials Corporation Power module substrate, power module substrate with heat sink, power module, and method of manufacturing power module substrate
KR20140041817A (en) 2011-08-12 2014-04-04 미쓰비시 마테리알 가부시키가이샤 Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module
US9480144B2 (en) 2012-03-30 2016-10-25 Mitsubishi Materials Corporation Power module substrate, power module substrate with heat sink, and power module
WO2013147142A1 (en) 2012-03-30 2013-10-03 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, and power module
KR20140147090A (en) 2012-03-30 2014-12-29 미쓰비시 마테리알 가부시키가이샤 Power module substrate, power module substrate with heat sink, and power module
US9764416B2 (en) 2013-01-22 2017-09-19 Mitsubishi Materials Corporation Power module substrate, heat-sink-attached power module substrate, and heat-sink-attached power module
WO2014115677A1 (en) 2013-01-22 2014-07-31 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, and power module with heat sink
KR20150108363A (en) 2013-01-22 2015-09-25 미쓰비시 마테리알 가부시키가이샤 Power module substrate, power module substrate with heat sink, and power module with heat sink
US9807865B2 (en) 2013-03-29 2017-10-31 Mitsubishi Materials Corporation Substrate for power modules, substrate with heat sink for power modules, and power module
WO2014157112A1 (en) 2013-03-29 2014-10-02 三菱マテリアル株式会社 Substrate for power modules, substrate with heat sink for power modules, and power module
KR20160064071A (en) 2013-09-30 2016-06-07 미쓰비시 마테리알 가부시키가이샤 Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module
WO2015046280A1 (en) 2013-09-30 2015-04-02 三菱マテリアル株式会社 Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module
US10016956B2 (en) 2013-09-30 2018-07-10 Mitsubishi Materials Corporation Cu/ceramic bonded body, method for manufacturing Cu/ceramic bonded body, and power module substrate
US10103035B2 (en) 2014-02-12 2018-10-16 Mitsubishi Materials Corporation Copper-ceramic bonded body and power module substrate
KR20160120285A (en) 2014-02-12 2016-10-17 미쓰비시 마테리알 가부시키가이샤 Copper/ceramic bond and power module substrate
US9735085B2 (en) 2014-03-20 2017-08-15 Mitsubishi Materials Corporation Bonded body, power module substrate, power module and method for producing bonded body
JP2018037677A (en) * 2014-11-20 2018-03-08 日本精工株式会社 Heat dissipating board
JP2018037676A (en) * 2014-11-20 2018-03-08 日本精工株式会社 Heat dissipating board
JP2018037678A (en) * 2014-11-20 2018-03-08 日本精工株式会社 Heat dissipating board
WO2018159590A1 (en) 2017-02-28 2018-09-07 三菱マテリアル株式会社 Copper/ceramic joined body insulated circuit board, method for producing copper/ceramic joined body, and method for producing insulated circuit board
KR20190123727A (en) 2017-02-28 2019-11-01 미쓰비시 마테리알 가부시키가이샤 Copper / ceramic bonded body, insulated circuit board, and manufacturing method of copper / ceramic bonded body, manufacturing method of insulated circuit board
WO2019082970A1 (en) 2017-10-27 2019-05-02 三菱マテリアル株式会社 Bonded body and insulated circuit board
WO2019146464A1 (en) 2018-01-25 2019-08-01 三菱マテリアル株式会社 Copper/ceramic bonded body, insulating circuit board, copper/ceramic bonded body production method, and insulating circuit board production method
DE102018106176A1 (en) * 2018-03-16 2019-09-19 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device with a metal plate and with a arranged on the metal plate substrate

Similar Documents

Publication Publication Date Title
US6876069B2 (en) Ground plane for exposed package
US5528076A (en) Leadframe having metal impregnated silicon carbide mounting area
JP4746283B2 (en) Method of connecting a heat sink to a circuit assembly and integrated circuit device
US6873043B2 (en) Electronic assembly having electrically-isolated heat-conductive structure
US6584681B2 (en) Method for producing a microelectronic component of sandwich construction
EP0746022B1 (en) Hybrid multi-chip module and method of fabricating
JP2548350B2 (en) Heat dissipation interconnect tape used for tape self-bonding
US6380621B1 (en) Semiconductor device and manufacturing method thereof
US4556899A (en) Insulated type semiconductor devices
US4849857A (en) Heat dissipating interconnect tape for use in tape automated bonding
US6861283B2 (en) Package for integrated circuit with thermal vias and method thereof
US6525942B2 (en) Heat dissipation ball grid array package
US5650662A (en) Direct bonded heat spreader
US6317326B1 (en) Integrated circuit device package and heat dissipation device
KR100307465B1 (en) Power module
US5352926A (en) Flip chip package and method of making
KR970005712B1 (en) High heat sink package
US4766481A (en) Power semiconductor module
US4670771A (en) Rectifier module
US20030011054A1 (en) Power module package having improved heat dissipating capability
KR20010111736A (en) Power module package having a insulator type heat sink attached a backside of leadframe & manufacturing method thereof
US5761044A (en) Semiconductor module for microprocessor
US20040041249A1 (en) Stacked chip package with enhanced thermal conductivity
US5646828A (en) Thin packaging of multi-chip modules with enhanced thermal/power management
US5151777A (en) Interface device for thermally coupling an integrated circuit to a heat sink