CN107819066B - A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates - Google Patents

A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates Download PDF

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Publication number
CN107819066B
CN107819066B CN201711020540.6A CN201711020540A CN107819066B CN 107819066 B CN107819066 B CN 107819066B CN 201711020540 A CN201711020540 A CN 201711020540A CN 107819066 B CN107819066 B CN 107819066B
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China
Prior art keywords
guide bar
flow guide
semiconductor heat
heat electric
ceramic substrate
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CN201711020540.6A
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Chinese (zh)
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CN107819066A (en
Inventor
田茂标
刘瑞生
阎利民
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成都万士达瓷业有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/02Details

Abstract

The invention discloses the production methods that a kind of hypoxemia copper is sintered DBC semiconductor heat electric substrates, belong to technical field of semiconductors.Include the following steps:Tile surface prints glue point, the process of assembly and sintering.The present invention chooses Al2O3Ceramic substrate, by glue point according to flow guide bar size corresponding size screen printing to Al2O3Ceramic substrate surface;First flow guide bar is sieved into mold;Then Al in step A2O3The substrate that ceramic substrate surface stamps glue point buckles into the mold of the full flow guide bar of sieve;The DBC semiconductor heat electric substrate semi-finished product assembled in step B are put into the system that high temperature and nitrogen gas purity are 99.999% DBC semiconductor heat electric substrates made of Direct Bonding.The present invention uses Al2O3Ceramic substrate directly covers copper with hypoxemia copper and is sintered.Al is used different from existing2O3Ceramic substrate covers copper sintering with the oxygen-free copper after oxidation processes, and the method for the invention directly can be obtained the figure of needs by sintering, flow guide bar oxidation processes before need not being sintered.

Description

A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates

Technical field

The invention belongs to the lifes that field of semiconductor manufacture more particularly to a kind of hypoxemia copper are sintered DBC semiconductor heat electric substrates Production method.

Background technology

With the development of power electronic device, circuit board integrated level is continuously improved with working frequency, and heat dissipation problem has become The critical issue solved is had in power electronic device development.Ceramic substrate is high-power electronic device, integrated circuit substrate Encapsulating material, be the key that supplementary material in the technologies such as power electronic, Electronic Packaging and multi-chip module, performance decides The radiating efficiency and reliability of module.

Hypoxemia copper is sintered DBC semiconductor heats electric substrate since with high-termal conductivity, high electrical insulating properties, current capacity be big, machine The features such as temperature characterisitic that tool intensity is high, matches with silicon chip, it is special to be therefore widely used in space flight, military project, automobile etc. Electronics industry is used for the insulation and heat dissipation of power chip.

Prior art is to use Al2O3Ceramic substrate covers copper sintering with after oxidation processes, wherein at oxygen-free copper oxidation Science and engineering skill complexity is difficult to control the consistency of oxidation, so the price is very expensive, oxygen-free copper sintering DBC semiconductor heat electric substrates are sold Valence is 5 times or so of hypoxemia copper sintering DBC semiconductor heat electric substrate prices.

Invention content

In order to solve above-mentioned problems of the prior art, the present invention is intended to provide a kind of hypoxemia copper sintering DBC is partly led The production method of body heat electric substrate, using Al2O3Ceramic substrate directly covers copper with hypoxemia copper and is sintered out client's required product figure, Sintering process is simple and of low cost.

In order to achieve the above-mentioned object of the invention, technical scheme is as follows:

A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates, includes the following steps:

A. tile surface prints glue point

Choose Al2O3Ceramic substrate, by glue point according to flow guide bar size corresponding size screen printing to Al2O3Ceramic substrate Surface;

B. it assembles

First flow guide bar is sieved into mold;Then Al in step A2O3The substrate that ceramic substrate surface stamps glue point buckles into In the mold of the full flow guide bar of sieve;

C. it is sintered

It is 99.999% that the DBC semiconductor heat electric substrate semi-finished product assembled in step B, which are put into high temperature and nitrogen gas purity, System in DBC semiconductor heat electric substrates made of Direct Bonding.

In step B of the present invention, flow guide bar itself oxygen content is 510 ~ 520ppm.

In step C of the present invention, passing through dumping, sintering and cooling three steps successively;The dumping refers to sintering system Before being warming up to 500 DEG C, glue point is melted charing volatilization inside system;Flow guide bar is contained at 300 DEG C or more by flow guide bar itself Oxygen amount 510 ~ 520ppm and Al2O3Ceramic substrate is sintered at 1000 DEG C ~ 1100 DEG C;Postcooling is sintered within 80 DEG C.

In step A of the present invention, the Al2O3Density >=3.7g/cm of ceramic substrate3

In step B of the present invention, being assembled in dustless, dry, constant temperature and vibrationless environment;It is described it is dustless be hundred Grade or more;The drying is 90% or less relative humidity.

Tensile strength >=the 780N/ for the hypoxemia copper sintering DBC semiconductor heat electric substrates that the present invention is made using the step ㎝2;And wicking experiment is qualified.

In step A of the present invention, the Al2O3Al in tile2O3Content be 95 ~ 98%.

In step C of the present invention, complete dumping before 500 DEG C, Control for Oxygen Content is burnt between 9.8 ~ 10.2ppm at 500 DEG C Control for Oxygen Content is between 2 ~ 10ppm when 1000 DEG C ~ 1100 DEG C of junction temperature point.

Present invention nitrogen gas purity in step C all must be 99.999% or more.

Compared with prior art, beneficial effects of the present invention are as follows:

(One)The present invention uses Al2O3Ceramic substrate directly covers copper with hypoxemia copper and is sintered.Different from existing use Al2O3Ceramic substrate covers copper sintering with the oxygen-free copper after oxidation processes, and the method for the invention can directly be obtained by sintering To the figure of needs, flow guide bar oxidation processes before need not being sintered.

(Two)The sintering process of the present invention is simple, using Al2O3Ceramic substrate is in high temperature and nitrogen gas purity with flow guide bar Ceramic base copper-clad plate made of Direct Bonding in 99.999% gas.The method of the invention requires sintering parameter to compare anaerobic It is more loose that copper covers copper sintering DBC semiconductor heat electric substrates, it is easier to produce qualified DBC semiconductor heat electric substrates.

(Three)At low cost using DBC semiconductor heats electric substrate made from the method for the invention, hypoxemia copper sintering DBC is partly led Body heat electric substrate price is 1/5 or so of oxygen-free copper sintering DBC semiconductor heat electric substrate prices, and hypoxemia copper covers copper sintering DBC half Conductor thermoelectricity substrate than it is existing using oxygen-free copper cover copper sintering DBC semiconductor thermoelectric substrate process it is simple, be conducive to industrialize Production.

(Four)The present invention is in Al2O3The surface of ceramic substrate is printed with glue point, this glue point is used for fixing flow guide bar, it is ensured that Al2O3Flow guide bar will not shift ceramic substrate before sintering.

(Five)The present invention has carried out drying and processing to flow guide bar, and on the one hand drying is convenient for storage, and on the other hand drying can be with Make not viscous glutinous between flow guide bar, does not aoxidize.

(Six)The present invention assembles in dustless dry constant temperature and vibrationless environment, keeps the clean free from dust of flow guide bar Pollution;Keeping flow guide bar drying to be conducive to sintering prevents from aoxidizing;The environmental benefits of constant temperature keep certain viscosity in adhesive, without friction Environment flow guide bar can be effectively prevent to shift.

Description of the drawings

Fig. 1 is the process flow chart of the present invention.

Fig. 2 is sintering temperature and oxygen content relation schematic diagram.

Fig. 3 is nitrogen flow and oxygen content relation schematic diagram.

Fig. 4 is the principle of the present invention schematic diagram.

Fig. 5 is the product vertical view of the present invention.

Fig. 6 is the product side view of the present invention.

Specific implementation mode

With reference to embodiment, the invention will be further described.

A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates, includes the following steps:

A. tile surface prints glue point

Choose Al2O3Ceramic substrate, by glue point according to flow guide bar size corresponding size screen printing to Al2O3Ceramic substrate Surface;

B. it assembles

First flow guide bar is sieved into mold;Then Al in step A2O3The substrate that ceramic substrate surface stamps glue point buckles into In the mold of the full flow guide bar of sieve;

C. it is sintered

It is 99.999% that the DBC semiconductor heat electric substrate semi-finished product assembled in step B, which are put into high temperature and nitrogen gas purity, System in DBC semiconductor heat electric substrates made of Direct Bonding.

The glue point of the present invention is for fixing flow guide bar position.

The flow guide bar of the present invention plays conduction, using hypoxemia copper particle.

In step B of the present invention, flow guide bar itself oxygen content is 510 ~ 520ppm.

In step C of the present invention, passing through dumping, sintering and cooling three steps successively;The dumping refers to sintering system Before being warming up to 500 DEG C, glue point is melted charing volatilization inside system;Flow guide bar is at 300 DEG C or more due to flow guide bar itself Oxygen content 510 ~ 520ppm and Al2O3Ceramic substrate is sintered at 1000 DEG C ~ 1100 DEG C;Postcooling is sintered within 80 DEG C.

In step A of the present invention, the Al2O3Density >=3.7g/cm of ceramic substrate3

In step B of the present invention, being assembled in dustless, dry, constant temperature and vibrationless environment;It is described it is dustless be hundred Grade or more;The drying is 90% or less relative humidity.

Tensile strength >=the 780N/ for the hypoxemia copper sintering DBC semiconductor heat electric substrates that the present invention is made using the step ㎝2;And wicking experiment is qualified.

In step A of the present invention, the Al2O3Al in tile2O3Content be 95 ~ 98%.

In step C of the present invention, complete dumping before 500 DEG C, Control for Oxygen Content is burnt between 9.8 ~ 10.2ppm at 500 DEG C Control for Oxygen Content is between 2 ~ 10ppm when 1000 DEG C ~ 1100 DEG C of junction temperature point.

Present invention nitrogen gas purity in step C all must be 99.999% or more.

The quality standard parameter for the product that following present invention the method is made:

The DBC semiconductor hot spot substrates being prepared using the method for the invention disclosure satisfy that above-mentioned mass parameter.

In the production method of hypoxemia copper sintering DBC semiconductor heat electric substrates of the present invention, Al2O3Ceramic substrate is direct It is bonded flow guide bar, within the scope of 1000 DEG C ~ 1100 DEG C, flow guide bar surface forms Cu-O eutectic liquids, and the method for the invention utilizes Cu-O eutectic liquids one side and Al2O3Ceramic substrate occurs chemical reaction and generates CuAlO2Or CuAl2O4On the other hand phase infiltrates Copper foil realizes Al2O3The combination of ceramic substrate and flow guide bar.

Al2O3The bonding mechanism of tile and flow guide bar is:Metal flow guide bar surface in the certain system of oxygen content at high temperature Oxidation forms a thin layer Cu2There is Cu when being higher than eutectic point in O, temperature2O eutectic liquid phases, Cu therein2O phases and Al2O3Ceramics have Good compatibility, interface is enable to reduce, eutectic liquid phase can soak copper and ceramics well.Cu in liquid phase simultaneously2O with Al2O3Chemical reaction occurs and forms CuAlO2, pass through Cu-Al-O chemical bonds, Cu after cooling2O and Al2O3Ceramic secure bond is one It rises.In Cu2The other end that O is contacted with metal, with Cu-O ionic bonds by Cu2O gets up with layers of copper close-coupled.

Claims (5)

1. a kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates, it is characterised in that:Include the following steps:
A. tile surface prints glue point
Choose Al2O3Ceramic substrate, by glue point according to flow guide bar size corresponding size screen printing to Al2O3Ceramic substrate surface;
B. it assembles
First flow guide bar is sieved into mold;Then Al in step A2O3The substrate that ceramic substrate surface stamps glue point buckles into sieve completely In the mold of flow guide bar;
C. it is sintered
The DBC semiconductor heat electric substrate semi-finished product assembled in step B are put into the body that high temperature and nitrogen gas purity are 99.999% DBC semiconductor heats electric substrate made of Direct Bonding in system;
In stepb, flow guide bar itself oxygen content is 510 ~ 520ppm, and the flow guide bar is using hypoxemia copper particle;
In step C, pass through dumping, sintering and cooling three steps successively;The dumping refers to that sintered body ties up to and is warming up to 500 Before DEG C, glue point is melted charing volatilization inside system;Flow guide bar itself oxygen content 510 ~ 520ppm and Al2O3Ceramic substrate exists 1000 DEG C ~ 1100 DEG C sintering;Postcooling is sintered within 80 DEG C;
In step C, dumping is completed before 500 DEG C, Control for Oxygen Content is between 9.8 ~ 10.2ppm at 500 DEG C, sintering temperature point Control for Oxygen Content is between 2 ~ 10ppm at 1000 DEG C ~ 1100 DEG C.
2. the production method of hypoxemia copper sintering DBC semiconductor heat electric substrates according to claim 1, it is characterised in that: In step A, the Al2O3Density >=3.7g/cm of ceramic substrate3
3. the production method of hypoxemia copper sintering DBC semiconductor heat electric substrates according to claim 1, it is characterised in that: In step B, assembled in dustless, dry, constant temperature and vibrationless environment;It is described it is dustless be hundred grades or more;The drying For 90% or less relative humidity.
4. the production method of hypoxemia copper sintering DBC semiconductor heat electric substrates according to claim 1, it is characterised in that:It adopts Tensile strength >=780N/ ㎝ of DBC semiconductor heat electric substrates are sintered with the hypoxemia copper that the step is made2;And wicking experiment is closed Lattice.
5. the production method of hypoxemia copper sintering DBC semiconductor heat electric substrates according to claim 1, it is characterised in that: In step A, the Al2O3Al in tile2O3Content be 95 ~ 98%.
CN201711020540.6A 2017-10-26 2017-10-26 A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates CN107819066B (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129243A (en) * 1975-07-30 1978-12-12 General Electric Company Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof
CN102432346A (en) * 2011-10-09 2012-05-02 南京汉德森科技股份有限公司 Preparation method of ceramic substrate for high-power LED packaging
CN102503579A (en) * 2011-10-13 2012-06-20 华中科技大学 Method for preparing metallized ceramic substrate by low-temperature sintering
CN102931321A (en) * 2012-11-16 2013-02-13 上海申和热磁电子有限公司 Manufacturing method for thin-copper DBC substrate
CN103762181A (en) * 2014-01-02 2014-04-30 上海申和热磁电子有限公司 Method for preparing aluminium nitride copper-coated ceramic substrate
CN104185900A (en) * 2012-03-30 2014-12-03 三菱综合材料株式会社 Power module substrate, power module substrate with heat sink, and power module
CN105367128A (en) * 2015-11-27 2016-03-02 常熟市银洋陶瓷器件有限公司 Preparation process suitable for metallization by bonding copper on aluminium oxide ceramic surface
CN105702588A (en) * 2014-11-24 2016-06-22 上海申和热磁电子有限公司 Thickened DBC (direct bonded copper) substrate manufacturing method and DBC (direct bonded copper) substrate manufactured using same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129243A (en) * 1975-07-30 1978-12-12 General Electric Company Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof
CN102432346A (en) * 2011-10-09 2012-05-02 南京汉德森科技股份有限公司 Preparation method of ceramic substrate for high-power LED packaging
CN102503579A (en) * 2011-10-13 2012-06-20 华中科技大学 Method for preparing metallized ceramic substrate by low-temperature sintering
CN104185900A (en) * 2012-03-30 2014-12-03 三菱综合材料株式会社 Power module substrate, power module substrate with heat sink, and power module
CN102931321A (en) * 2012-11-16 2013-02-13 上海申和热磁电子有限公司 Manufacturing method for thin-copper DBC substrate
CN103762181A (en) * 2014-01-02 2014-04-30 上海申和热磁电子有限公司 Method for preparing aluminium nitride copper-coated ceramic substrate
CN105702588A (en) * 2014-11-24 2016-06-22 上海申和热磁电子有限公司 Thickened DBC (direct bonded copper) substrate manufacturing method and DBC (direct bonded copper) substrate manufactured using same
CN105367128A (en) * 2015-11-27 2016-03-02 常熟市银洋陶瓷器件有限公司 Preparation process suitable for metallization by bonding copper on aluminium oxide ceramic surface

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