CN104134644B - 球焊用稀贵金属银合金丝 - Google Patents
球焊用稀贵金属银合金丝 Download PDFInfo
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- CN104134644B CN104134644B CN201410131290.3A CN201410131290A CN104134644B CN 104134644 B CN104134644 B CN 104134644B CN 201410131290 A CN201410131290 A CN 201410131290A CN 104134644 B CN104134644 B CN 104134644B
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- Prior art keywords
- precious metal
- wire
- alloy wire
- bonding
- rare precious
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- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 69
- 239000010970 precious metal Substances 0.000 title claims abstract description 67
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 53
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052709 silver Inorganic materials 0.000 claims abstract description 27
- 239000004332 silver Substances 0.000 claims abstract description 27
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- 239000010931 gold Substances 0.000 claims abstract description 18
- 238000005491 wire drawing Methods 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 8
- 239000010432 diamond Substances 0.000 claims abstract description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 22
- 239000005864 Sulphur Substances 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229910052946 acanthite Inorganic materials 0.000 abstract description 17
- 238000009749 continuous casting Methods 0.000 abstract description 11
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 abstract description 9
- 229940056910 silver sulfide Drugs 0.000 abstract description 9
- 238000005987 sulfurization reaction Methods 0.000 abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 230000001603 reducing effect Effects 0.000 abstract description 2
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 18
- 239000000203 mixture Substances 0.000 description 17
- 239000010944 silver (metal) Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 229910000521 B alloy Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 235000019198 oils Nutrition 0.000 description 7
- 238000005275 alloying Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- -1 fatty acid diesters Chemical class 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002736 nonionic surfactant Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005554 pickling Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000010946 fine silver Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 244000068988 Glycine max Species 0.000 description 1
- 235000010469 Glycine max Nutrition 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000019482 Palm oil Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- IWYTWVAWXBYXSL-UHFFFAOYSA-N [F].C(CO)O Chemical compound [F].C(CO)O IWYTWVAWXBYXSL-UHFFFAOYSA-N 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002540 palm oil Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011297 pine tar Substances 0.000 description 1
- 229940068124 pine tar Drugs 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000010499 rapseed oil Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53247—Noble-metal alloys
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/745—Apparatus for manufacturing wire connectors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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Abstract
本发明提供一种球焊用稀贵金属银合金丝,本发明旨在通过在稀贵金属银合金丝的整个面上设置极薄的碳层,利用该碳的还原作用防止大气对稀贵金属银合金的硫化和氧化,而且,即使是第二次键合时超声波的低热能,也能从键合面上去除与银合金丝表面松散结合的硫化银膜等。本发明的球焊用稀贵金属银合金丝的特征在于,在质量百分比纯度99.9%以上的钯、铂及金中的至少一种的总量占质量百分比0.1~6%、且其他部分由质量百分比纯度99.99%以上的银构成的球焊用稀贵金属银合金丝的表面结构中,该键合丝表面是连铸面经金刚石模具缩径后的拉丝加工面,该拉丝加工面的整个面上形成了总有机碳量为50~3,000μg/m2的有机碳层。
Description
技术领域
本发明涉及适用于半导体装置中使用的IC芯片电极与外部引线等电路板连接的键合用稀贵金属银合金丝,特别是第二次键合性优良的球焊用稀贵金属银合金丝。
背景技术
一直以来,作为连接半导体装置的IC芯片电极与外部引线的球焊键合丝,在质量百分比纯度99.99%以上的金(Au)中只添加了不到100ppm(质量比)其他金属元素的纯金丝因连接可靠性优良而大量使用。这种纯金丝在其一端形成熔球后,通过热压超声波键合法被连接至IC芯片电极上的铝焊盘,另一端被连接至印刷电路板、引线框架及器件等外部引线等。然后,连接好的纯金丝被模制树脂密封,形成半导体装置。此外,铝焊盘由纯铝(Al)、Al-1%Si(质量百分比)合金、Al-0.5%Cu(质量百分比)合金、Al-1%Si(质量百分比)-0.5%Cu(质量百分比)合金等构成,一般采用真空蒸镀等干式镀覆成形。
很早以前就一直考虑使用银合金来代替这种纯金丝。例如,特开2012-99577号公报(后述的“专利文献1”)中披露了“特征为以银(Ag)为主要成分;至少含有一种以上从10000~90000ppm(质量比)的金(Au)、10000~50000ppm(质量比)的钯(Pd)、10000~30000ppm(质量比)的铜(Cu)、10000~20000ppm(质量比)的镍(Ni)中选出的成分;且氯(Cl)含量不到1ppm(质量比)的键合丝”的发明。该发明“旨在廉价提供键合丝表面不施加金属涂层、波长380~560nm处的光反射率高、提高了化学稳定性的键合丝,从而提高发光装置的光特性(该公报0008段落)”。
与纯银键合丝相比,该银合金丝因钯(Pd)等的耐氯性、耐硫性的相互作用,在氯(Cl)、硫(S)等大气及特殊环境下的污染均比纯银丝有了大致改善。但是,与纯金丝相比,合金成分的贵金属含量为6%以下的所谓稀贵金属银合金丝依然存在键合丝表面易脏、硫化程度易加深的缺点。因此,也存在如下缺点:即使是在使用键合丝的一般洁净室内,如果将稀贵金属银合金丝放置30天左右,键合丝表面就会因从室外气体引入的空气中存在的硫(S)而形成硫化银(Ag2S),该硫化银(Ag2S)会影响优良的第二次键合,降低采用超声波时与外部引线的键合强度。
另一方面,关于为了提高与键合工具间的滑动而“以Au、Al、Cu中的任意一种为主要元素,拉丝加工成10~50μm左右的极细丝,在线轴上卷绕规定长度,并以这种状态安装在键合机上使用(特开平6-151497号公报(后述的“专利文献2”)0002段落)”的键合丝,已知的还有熔铸后对铸块进行酸洗等,“特征为表面的总有机碳量为50~1500μg/m2的半导体器件键合丝(该公报权利要求1)”。关于该方法,记载如下:“经一般工艺,即溶解、铸造、拉丝、退火、卷绕工艺制造的键合丝表面已可以看到超过1500μg/m2的总有机碳量,因此,制造表面总有机碳量为50~1500μg/m2的键合丝的方法之一就是采用…酸洗…等方法对其进行冲洗,令表面总有机碳量在50~1500μg/m2范围内(权利要求2)。该方法的特征在于,只要在一般工艺的退火工艺前或后设置冲洗工艺就可以了,容易实施。(该公报0010段落)”,而且,“润滑剂成分有石蜡烃、环烷烃、芳烃等矿物油类;聚烯烃、烷基苯、脂肪酸、高级醇、脂肪酸皂、聚乙二醇、聚苯醚、脂肪酸二酯、多元醇酯、聚氧乙烯烷基醚、磺酸盐、胺、胺盐、硅酮、磷酸酯、碳氟化合物、氟聚醚、氟乙二醇等合成油类;牛油、猪油、棕榈油、豆油、菜油、蓖麻油、松油等天然油脂类,可以使用任意一种。此外,也可以使用上述多种成分的混合(该公报0012段落)”。
但是,该有机碳是作为润滑剂成分使用的,并非以隔离大气中的硫(S)成分为目的。尽管本发明的稀贵金属银合金丝不是质量百分比纯度99.9%以上的纯银丝,但仍具有容易吸收大气中的硫(S)成分的性质。因此,如果碳层薄,则具有银(Ag)成分容易与大气中存在的硫(S)成分结合,在键合丝表面形成硫化银的性质。于是存在如下缺点,即一旦在键合丝表面形成牢固的硫化银(Ag2S)后,该硫化银(Ag2S)继续向键合丝内部深入,形成不均一的硫化银(Ag2S)膜,令第二次键合不稳定,第二次键合的键合面不稳定。而且,在对稀贵金属银合金丝进行第二次键合时,一般都会将电路板、引线框架、器件等加热到高温(100℃~250℃左右)状态,因此,由于其周围环境的热气,存在于键合面的由键合丝衍生的硫(S)就更容易与大气中存在的硫(S)成分结合。因此,还存在第二次键合后键合面的硫化程度进一步加深,键合面变得更容易剥离的缺点。
而且,如果键合前硫化银(Ag2S)膜进一步向键合丝内部深入,则第一次键合前就会发生芯片开裂、键合不良等不良影响。
专利文献:
专利文献1:特开2012-99577号公报
专利文献2:特开平6-151497号公报。
发明内容
本发明是为了解决上述第二次键合的问题而开发的,旨在提供令虽为稀贵金属银合金但可以防止大气中的硫引起的硫化的稀贵金属银合金丝达到实际应用的键合丝。
本发明人等着眼于熔铸后的稀贵金属银合金表面的活性(与大气中的硫(S)的化学反应性)比纯银合金小这一点,旨在实现下列目的:首先通过采用稀贵金属银合金减弱大气中的硫(S)与键合丝表面的银(Ag)成分的化学反应性;继而通过对该表面实施缩径、减小表面积降低表面活性;然后通过在稀贵金属银合金丝的整个面上设置极薄的碳层,利用该碳(C)的还原作用防止大气对稀贵金属银合金的硫化和氧化;而且,即使不是如第一次键合时的熔化热般的强大热能,而是第二次键合时超声波的低热能,也能从键合面上去除与银合金丝表面松散结合的硫化银(Ag2S)膜等。
用以解决本发明的问题的球焊用稀贵金属银合金丝的表面结构,其特征在于,在质量百分比纯度99.9%以上的钯(Pd)占质量百分比0.1~6%(现有技术合金丝表面结构的钯质量百分比含量,以合金丝总质量为100%计)、且其余部分由质量百分比纯度99.99%以上的银(Ag)构成的球焊用稀贵金属银合金丝的表面结构中,该钯(Pd)占质量百分比3.0~4.8%(本发明合金丝表面结构的钯质量百分比含量,以合金丝总质量为100%计)、且其余部分由银(Ag)构成的键合丝表面是连铸面经金刚石模具缩径后的拉丝加工面,该拉丝加工面的整个面上形成了总有机碳量(TOC值)为50~3,000μg/m2且由沸点比上述稀贵金属银合金的熔点低的水溶性非硫系有机高分子衍生的有机碳层。
在本发明的稀贵金属银合金丝的表面结构中,以连铸面状态保留该键合丝表面,是为了使键合丝表面不形成新的活性面。此外,通过金刚石模具对该连铸面进行拉丝加工,是因为金刚石模具对稀贵金属银合金的滑动性好,能在保留连铸面的状态下进行缩径。利用金刚石模具的缩径至少需要最终的拉丝模具是金刚石模具。一般的缩径是在水中或采用喷淋的湿式连续拉丝方式进行的。通过令本发明的稀贵金属银合金丝表面变成令连铸面缩径后的惰性拉丝加工面,并在该表面上设置有机碳层,可以防止大气中的硫(S)与键合丝表面的银(Ag)成分的结合。
在本发明的稀贵金属银合金丝的表面结构中,令上述稀贵金属银合金为质量百分比纯度99.9%以上的钯(Pd)占质量百分比0.1~6%、且其余部分为质量百分比纯度99.99%以上的银(Ag),是因为考虑到与铝焊盘的键合性及可靠性寿命。即,如果事先不令稀贵金属银合金丝本身的硬度降低一定程度,则熔球与纯铝(Al)焊盘及Al合金焊盘等连接时,会更容易发生芯片损伤。此外,也是为了第一次键合的键合面上银(Ag)与铝(Al)的键合面上没有硫(S)成分的残留。钯(Pd)具有在第一次键合时在无空气焊球(FAB)的氮环境中不与铝焊盘形成金属间化合物且以正球体形状连接熔球的效果。令合金元素的含量为质量百分比6%以下,是因为超过质量百分比6%后,在无空气焊球(FAB)中形成的熔球会过硬,更容易发生芯片损伤。此外,令合金元素的含量为质量百分比0.1%以上,是因为合金元素的含量过少,就不能获得抗硫化性,即使表层形成了有机碳膜,也不能抑制连铸面上硫化程度的加深。稀贵金属银合金丝的连铸面上形成硫化银(Ag2S)膜后,就会形成熔球,即使有机碳层高温裂解,熔球也会变硬,更容易发生芯片损伤。
令银(Ag)成分的纯度为质量百分比99.99%以上,是为了令金属杂质不到100ppm(质量比),避免金属杂质在稀贵金属银合金丝的连铸面上发生内部氧化。为了形成优质的稀贵金属银合金丝,银(Ag)成分的纯度应为质量百分比99.999%以上。同样,为了形成优质的稀贵金属银合金丝,钯(Pd)的纯度应为质量百分比99.99%以上;优选的,钯(Pd)、铂(Pt)及金(Au)等各合金元素的纯度应为质量百分比99.99%以上。
在本发明的稀贵金属银合金丝的合金元素中,钯(Pd)最理想。因为易于分解第二次键合时稀贵金属银合金丝表面形成的硫化物。此外,钯(Pd)阻碍银(Ag)与铝(Al)在第一次键合时的键合面上形成金属间化合物、以及在高温高湿下条件下阻止银(Ag)与铝(Al)的金属间化合物造成的键合面劣化的作用都很高。
此外,本发明的稀贵金属银合金应为质量百分比纯度99.99%以上的钯(Pd)占质量百分比0.1~5%、钛(Ti)为5~60ppm(质量比)、且其他部分由质量百分比纯度99.99%以上的银(Ag)构成。钛(Ti)是为了抑制熔球形成时钯(Pd)带来的催化活性。另一方面,钛(Ti)存在令稀贵金属银合金的熔球变硬的倾向,因此,应为5~60ppm(质量比)。
优选的,本发明的稀贵金属银合金为质量百分比纯度99.99%以上的钯(Pd)占质量百分比3.0~4.8%、钛(Ti)质量比为5~60ppm、且其他部分由质量百分比纯度99.99%以上的银(Ag)构成。
在本发明的球焊用稀贵金属银合金丝的表面结构中,令该拉丝加工面的整个面上形成了总有机碳量(TOC值)为50~3,000μg/m2的有机碳层,是为了降低键合丝活性,避免稀贵金属银合金丝与大气中的硫(S)等结合。本发明的有机碳层指的是成分元素中不含硫(S)的非硫系有机高分子化合物衍生物。由于稀贵金属银合金丝的熔点比纯金丝低,因此,有机碳层应为沸点比稀贵金属银合金的熔点低的水溶性非硫系有机高分子衍生物,如非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂。表面活性剂中,非离子表面活性剂最理想。例如,和光纯药工业株式会社产的商品名NCW-1001等。此外,也可以是沸点比稀贵金属银合金的熔点低的水溶性醇衍生物。可以是乙醇、甲醇或异丙醇衍生物。优选可以是总分子量小的乙醇、甲醇或异丙醇衍生物。
令本发明的拉丝加工面的整个面上形成了有机碳层,是因为如果存在未形成有机碳层的部位,即使只有一部分,大气中的硫(S)也会经此与稀贵金属银合金丝的表面结合,形成硫化银(Ag2S)膜。
此外,令有机碳层的厚度为总有机碳量(TOC值)50~3,000μg/m2,是因为球焊用键合丝的线径一般为15~25μm,可以根据总有机碳量(TOC值)通过计算简单地算出有机碳层的有效厚度。50~3,000μg/m2的范围可以通过纯水高温烫洗及超声波冲洗、或者有机高分子化合物超稀溶液浸渍来控制,按照控制的容易度,应采用超稀溶液浸渍。此外,令上限为3,000μg/m2,是为了减少键合工具上的碳粉粘附/堆积量。因为,虽然本发明的稀贵金属银合金丝的熔点比纯金键合丝低,但即便如此,碳粉也会粘附、堆积在键合工具上。如果考虑键合工具更换频率等操作性,则应为2,400μg/m2,1,800μg/m2则更理想。
水溶性非硫系有机高分子化合物中,如果是非离子表面活性剂、或者乙醇、甲醇或异丙醇等的水溶性醇衍生物,即使表面的总有机碳量超过1,800μg/m2,只要在3,000μg/m2范围内,在一般键合次数为50万次的连续键合作业中不会因碳粉积累而引起毛细管堵塞及夹持器污染等。
如果采用本发明的球焊用稀贵金属银合金丝,则由于缩径后的惰性连铸面上已形成了有机碳层,因此,稀贵金属银合金丝不会立即与大气中的硫(S)结合而形成牢固的硫化银。因此,即使将本发明的球焊用稀贵金属银合金丝长期放置于室温下,键合丝表面也不会产生大气中存在的硫(S)成分造成的牢固的硫化银(Ag2S)膜。即,本发明的球焊用稀贵金属银合金丝除了成分组成带来的优良键合特性之外,利用超声波的第二次键合性也很卓越,因此,可以保证开始使用前的键合丝产品寿命。此外,如果采用本发明的稀贵金属银合金丝,即使反复键合,毛细管也不会发生污染。
具体实施方式
以下通过具体实施例详细说明本发明的实施过程和产生的有益效果,旨在帮助阅读者更好地理解本发明的实质和特点,不作为对本案可实施范围的限定。
将具有表1所示的成分组成的稀贵金属银合金(贵金属成分的纯度为:银(Ag)质量百分比99.999%以上,其他合金成分分别为质量百分比99.99%以上)熔化均匀后进行连续铸造,得到直径5mm的粗丝。不对该粗丝进行酸洗处理,而是采用湿式通过金刚石模具连续拉丝,为获得规定的机械特性而进行调质热处理,得到保留了连铸面的直径20μm的键合丝。然后,连续浸渍于表2所示的各种浓度的非硫系有机化合物水溶液中,得到本发明的球焊用稀贵金属银合金丝(实施品1~实施品15)。
此处,实施品9表示将键合丝浸渍于乙醇浓度为1%的水溶液中后,干燥时的有机碳量为2,800μg/m2。
实施品15是在制造Ag-3%Pd合金键合丝后,浸渍于乙醇稀溶液中,再以纯水高温冲洗之物。
表1
此外,表2所示的非离子表面活性剂为BLUEBELL株式会社销售的服装用液体洗涤剂(商品名:Natural)。阴离子表面活性剂为日油株式会社产的商品名:PERSOFT(注册商标)。阳离子表面活性剂为日油株式会社产的商品名:NISSANCATION(注册商标)。两性表面活性剂为日油株式会社产的商品名:NISSANANON(注册商标)BD。
表2
按照洁净室环境(温度25℃、湿度50%)将该稀贵金属银合金丝在实验室放置30天后,进行了硫化银(Ag2S)膜厚测量、第二次键合键合性试验及毛细管堵塞试验,得到表3的结果。
表3
比较例
将具有表1所示的成分组成的稀贵金属银合金熔化均匀后进行连续铸造,得到直径5mm的粗丝。对于用稀硝酸对该粗丝进行表面酸洗和未进行酸洗之物进行与实施例一样的操作,得到比较例的球焊用稀贵金属银合金丝(比较品16~比较品18)。
此处,比较品16是在对Ag-2.5%Pd合金进行连续铸造,得到直径5mm的粗丝后,用稀硝酸进行表面酸洗,连续拉丝,制造键合丝,然后浸渍于乙醇超稀溶液中,不放置30天,而是在当天开始试验之物。
比较品17是在对Ag-4%Pt合金进行连续铸造,得到直径5mm的粗丝后,用稀硝酸进行表面酸洗,连续拉丝,制造键合丝,然后形成非离子表面活性剂衍生的有机碳膜,放置30天后,进行膜厚测量及试验之物。
比较品18是在制造超出金(Au)含量下限的Ag-0.07%Au合金键合丝后,形成了超出有机碳量上限的两性表面活性剂衍生的有机碳膜之物。
对于该稀贵金属银合金丝(比较品17~18),进行了以室温在实验室放置30天后的硫化银(Ag2S)膜厚测量、第二次键合键合性试验及毛细管堵塞试验,得到表3的结果。但是,如上所述,比较例16没有放置,而是在当天开始了膜厚测量及试验。
总有机碳量(TOC)的测量
总有机碳量的测量为,分别称量1000m稀贵金属银合金丝,加入200g的0.1N-NaOH水溶液,用水浴煮沸30分钟,进行萃取,冷却后加入2.5ml的8N-HCl,轻轻振荡,在高纯度空气下起泡15分钟。将其放入株式会社岛津制作所产TOC-5000型有机碳分析仪中,测量有机碳浓度,根据该值计算总有机碳重量,除以20μm直径的稀贵金属银合金丝的表面积,作为表面的非离子表面活性剂的总有机碳量。
硫化银(Ag2S)膜厚的测量
形成于键合丝表面的硫化银(Ag2S)的测量使用膜厚测量仪(ECI公司产、型号QC200)进行。实施品1~实施品15、以及比较品16的硫化银(Ag2S)膜厚均为10nm以下。而比较品17~18均为20nm以上。
经过30天后的第二次键合键合性试验
第二次键合键合性试验是使用株式会社新川产键合机,令环长为2mm、环高为200μm,用规定的拉钩对距第二键合点20%的位置进行拉伸试验时的键合强度。实施品1~实施品15、以及比较品16的结果优良,但与比较品16对比的比较品17的结果不理想。这是因为硫化银(Ag2S)形成所致。
毛细管堵塞试验
毛细管堵塞试验使用新毛细管开始键合,计算键合次数,直到毛细管堵塞、不能键合为止。结果如表3所示。
从经过30天后的第二次键合键合性试验可以明确知道,本发明的球焊用稀贵金属银合金丝实施品1~实施品15、以及比较品16的断裂强度均为4.0克力(gf)以上,优良;而比较例的球焊用稀贵金属银合金丝(比较品17~18)则不理想。
从毛细管堵塞试验可以明确知道,本发明的球焊用稀贵金属银合金丝(实施品1~8及10~15、比较品16及17)均在键合次数超过100万次后也没有发生毛细管堵塞,优良;而比较例的球焊用稀贵金属银合金丝(特别是比较品18)在25万次时就发生了毛细管堵塞。
从上述实施例及比较例可以明确知道,涉及本发明的实施品不仅没有发生毛细管堵塞,而且以室温在实验室中放置30天后的键合特性优良。具体可知,关于比较品,尽管键合丝刚制造后,第二次键合特性优良(比较品16),但经过30天后,硫化银(Ag2S)膜深入,第二拉伸强度变得极低(比较品17~18);而涉及本发明的实施品1~15在放置30天后也未产生或基本上未产生硫化银(Ag2S)膜,第二拉伸强度高。此外还知道,TOC值越高则毛细管堵塞发生越快(比较品18),令操作性变差。
本发明的球焊用稀贵金属银合金丝除了通用IC、分立IC、内存IC外,还具有既要求高温高湿用途又要求低成本的LED用IC封装、汽车半导体用IC封装、难以使用铜(Cu)键合丝的防御、航天、航空产业用IC封装、或医疗用途及光电耦合器等半导体用途。
Claims (5)
1.球焊用稀贵金属银合金丝,其特征在于,在质量百分比纯度99.9%以上的钯占质量百分比0.1~6%、且其余部分由质量百分比纯度99.99%以上的银构成的球焊用稀贵金属银合金丝的表面结构中,该钯占质量百分比3.0~4.8%、且其余部分由银构成的键合丝表面是连铸面经金刚石模具缩径后的拉丝加工面,该拉丝加工面的整个面上形成了总有机碳量为50~3,000μg/m2且由沸点比上述稀贵金属银合金的熔点低的水溶性非硫系有机高分子衍生的有机碳层。
2.根据权利要求1记载的球焊用稀贵金属银合金丝,其特征在于,上述钯的纯度为质量百分比99.99%以上。
3.根据权利要求1记载的球焊用稀贵金属银合金丝,其特征在于,上述稀贵金属银合金为质量百分比纯度99.99%以上的钯占质量百分比3.0~4.8%、钛质量比为5~60ppm、且其他部分由质量百分比纯度99.99%以上的银构成。
4.根据权利要求1记载的球焊用稀贵金属银合金丝,其特征在于,上述有机碳层为沸点比上述稀贵金属银合金的熔点低的水溶性醇的衍生物。
5.根据权利要求1记载的球焊用稀贵金属银合金丝,其特征在于,上述有机碳层为乙醇、甲醇或异丙醇的衍生物。
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