SG10201401162WA - Ball bonding-wire of dilute alloys of precious metal in silver - Google Patents

Ball bonding-wire of dilute alloys of precious metal in silver

Info

Publication number
SG10201401162WA
SG10201401162WA SG10201401162WA SG10201401162WA SG10201401162WA SG 10201401162W A SG10201401162W A SG 10201401162WA SG 10201401162W A SG10201401162W A SG 10201401162WA SG 10201401162W A SG10201401162W A SG 10201401162WA SG 10201401162W A SG10201401162W A SG 10201401162WA
Authority
SG
Singapore
Prior art keywords
silver
wire
precious metal
ball bonding
dilute alloys
Prior art date
Application number
SG10201401162WA
Inventor
Kazuhiko Yasuhara
Yuki ANTOKU
Wei Chen
Nanako Maeda
Jun Chiba
Junichi Okazaki
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of SG10201401162WA publication Critical patent/SG10201401162WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53247—Noble-metal alloys
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2924/01046—Palladium [Pd]
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    • H01L2924/01—Chemical elements
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10254—Diamond [C]
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
SG10201401162WA 2013-04-02 2014-04-01 Ball bonding-wire of dilute alloys of precious metal in silver SG10201401162WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013076727A JP5507730B1 (en) 2013-04-02 2013-04-02 Noble metal dilute silver alloy wire for ball bonding

Publications (1)

Publication Number Publication Date
SG10201401162WA true SG10201401162WA (en) 2014-11-27

Family

ID=50941924

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201401162WA SG10201401162WA (en) 2013-04-02 2014-04-01 Ball bonding-wire of dilute alloys of precious metal in silver

Country Status (5)

Country Link
JP (1) JP5507730B1 (en)
KR (2) KR20140120277A (en)
CN (1) CN104134644B (en)
SG (1) SG10201401162WA (en)
TW (1) TWI521070B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6810222B2 (en) * 2014-07-11 2021-01-06 ローム株式会社 Electronic device
JP2016028417A (en) * 2014-07-11 2016-02-25 ローム株式会社 Electronic device
JP2016029691A (en) * 2014-07-25 2016-03-03 田中電子工業株式会社 Structure of surface property-modified silver palladium alloy wire
JP5669335B1 (en) * 2014-09-26 2015-02-12 田中電子工業株式会社 Silver-gold alloy bonding wire
CN104835798B (en) * 2015-03-30 2017-07-04 山东科大鼎新电子科技有限公司 A kind of preparation method of anti-oxidant bonding brass wire

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487736A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for silver extra thin wire
JP3210445B2 (en) 1992-11-10 2001-09-17 田中電子工業株式会社 Method for manufacturing bonding wire for semiconductor device
JPH11288962A (en) * 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd Bonding wire
JP5023706B2 (en) * 2007-01-11 2012-09-12 住友金属鉱山株式会社 Bonding wire and manufacturing method thereof
JP2012099577A (en) 2010-10-29 2012-05-24 Sumitomo Metal Mining Co Ltd Bonding wire
JP5430540B2 (en) * 2010-11-16 2014-03-05 日鉄住金マイクロメタル株式会社 Bonding wire and manufacturing method thereof
JP5293728B2 (en) * 2010-12-14 2013-09-18 日鉄住金マイクロメタル株式会社 Bonding wire
JP2012204805A (en) * 2011-03-28 2012-10-22 Sumitomo Metal Mining Co Ltd Bonding wire
CN102776408B (en) * 2012-08-16 2014-01-08 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof

Also Published As

Publication number Publication date
CN104134644B (en) 2017-04-12
TW201446980A (en) 2014-12-16
KR20140120277A (en) 2014-10-13
JP5507730B1 (en) 2014-05-28
CN104134644A (en) 2014-11-05
JP2014203875A (en) 2014-10-27
KR20160085738A (en) 2016-07-18
TWI521070B (en) 2016-02-11

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