CN102324392B - 一种防氧化的铜基键合丝的制备工艺 - Google Patents

一种防氧化的铜基键合丝的制备工艺 Download PDF

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CN102324392B
CN102324392B CN201110317098XA CN201110317098A CN102324392B CN 102324392 B CN102324392 B CN 102324392B CN 201110317098X A CN201110317098X A CN 201110317098XA CN 201110317098 A CN201110317098 A CN 201110317098A CN 102324392 B CN102324392 B CN 102324392B
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copper
gold
wire
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bonding wires
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赵碎孟
周钢
薛子夜
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GUANGZHOU JB ELECTRONIC TECHNOLOGY Co Ltd
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Abstract

本发明提供一种防氧化的铜基键合丝，其键合丝包括基础材料为铜，铜中添加微量金属元素Pt、Ce、Pd，组成母合金基材，母合金基材制成细丝，并在其表面镀金层，构成所述键合丝，铜和金的纯度都高于99.99％。本发明还提供了所述键合丝的制备工艺，包括母合金熔炼、拉制、清洗、镀金、退火、绕线、包装等步骤。该铜基键合丝兼具铜键合丝和金键合丝的双重优点，具有良好抗氧化性、导电性以及低弧稳定的特点，改善了单一铜材的硬度，价格低等优点，铜基键合丝包装简便，在常温下可以长期保存，能够适应电子封装高端发展的需求。

Description

一种防氧化的铜基键合丝的制备工艺
技术领域
本发明涉及键合丝制造工艺技术，特别是一种铜基母合金键合丝的制备工艺技术。 
背景技术
键合丝(Bonding Wires)是集成电路半导体封装过程中需要用到一种关键材料，电子行业的快速发展，促进了键合丝制造技术的快速发展。键合丝是一种直径精细的高拉伸强度金属丝，广泛应用于集成电路、半导体分立器件和LED发光管的封装内引线。目前在键合丝应用技术中，应用较多的有合金键合丝、铜键合丝、铝键合丝、金键合丝等，最常见的是键合金丝、键合铝丝和铜键合丝几种。 
键合金丝是大多为直径15微米至75微米的高纯度黄金精细丝，是目前比较成熟的键合丝产品，在键合丝使用中占主导地位，具有化学稳定等优点，但也存在其自身无法克服的缺点：价格昂贵，受市场金件大幅上涨影响较大，制约了封装成本的控制，导致终端产品的价格过高，不利于企业提高竞争力；另外，作为连接引线，其导电性能欠佳，并且焊接后的可靠性较差；集成电路规模大、厚度小、功能复杂化，使得封装密度不断提高，键合金丝已很难满足高强度、低长弧度、高弧形稳定方面的要求。 
键合铜丝可以在一定程度上弥补键合金丝硬度的问题，具有一点的抗拉性，价格优势明显，但是单一的键合铜丝还存在一些缺点：如铜丝过硬引起的第二焊点容易缩丝，致使键合操作中断，给后续封装工序造成困难，严重影响生成效率和成品率；铜的氧化温度低，键合铜丝的高氧化性，使得键合铜丝在开包 后必须在较短时间内用完，键合丝成品长度受限，并且保存需要真空或保护气体。 
发明内容
基于上述原因，申请人针对上述金键合丝和铜键合丝制造技术及在实际应用中的具体问题，提供一种铜基键合丝，解决键合金丝丝价格高、键合铜丝硬度、防氧化，键合丝包装、储运等问题。 
为达到上述目的，本发明所采取的解决方案是：一种铜基键合丝，基础材料为铜，并添加Pt、Ce、Pd微量金属元素，构成母合金基材，在母合金基材制成的金属丝表面镀金层而制成该键合丝。 
所述键合丝的基础材料为铜，铜和镀层金的纯度均高于99.99％，并且所述铜来料包括成品的铜线。 
所述键合丝基材是以铜为基础材料添加种微量金属元素Pt、Ce、Pd而构成，其功能是改善单一铜材过硬的问题。 
所述键合丝表面镀金的厚度为0.1微米-2.0微米。 
所述键合丝材料中各金属成分质量比重分别是：Cu为88-97％，微量金属元素Pt为0.0006-0.010％，Ce为0.001-0.005％，Pd为0.003-0.005％，镀层金2-10％。 
所述铜基键合丝的制备工艺包括如下步骤： 
步骤一，混合金属基材，将纯度高于99.99％的Cu，添加选定的微量金属材料Pt、Ce、Pd，混合为母合金基材，做好混合熔炼前期准备； 
步骤二，熔炼母合金胚材，将上述混合金属材料在真空度为10-2-10-3Mpa的熔炉内高温融化，保持熔炼温度为1800℃，精炼时间50分钟以上，熔炼过程中采用高纯度氩气保护，最后采用凝固方式制备直径为8-10毫米的母合金铜棒胚料； 
步骤三，拉制微细丝，将上述直径为8-10毫米的母合金铜棒胚料进行冷加工，加工至直径为1.0毫米左右的母合金丝，然后进行拉拔处理，每次加工率为15％至20％，每次拉拔速度控制在50米/分钟左右，速度波动控制在10％以内；再经过以下相似过程多次，采用每次加工率为6％至20％，将前述金属细丝加工至直径15微米-75微米，拉制速度控制在500米/分钟，速度变化控制在10％以内； 
步骤四，清洗金属丝，将上述微细金属丝进行表面清洗，采用超声波技术清洗，清洗介质采用无水酒精； 
步骤五，表面镀金，将上述清洗后的微细金属丝进行电镀处理，电镀液为软金电镀液，金的纯度高于99.99％，电镀电流密度0.25A/dm2-5.0A/dm2，电镀速度控制在20m/min内； 
步骤六，退火处理，将表面镀金的微细铜丝进行退火处理，采用氮气保护环境下热处理，热处理温度为415℃--425℃，处理时间控制在1.0S-2.1S，控制退火时张力大小3.0g以内； 
步骤七，绕线，使用专用绕线机，将键合丝定长绕制在两英寸直径的线轴上，绕线速度控制在50m/min-100m/min，线间距约为5毫米，分卷长度为50米至1000米； 
步骤八，包装，采用普通包装，常温保存。 
本发明有益的技术效果： 
铜添加微量金属元素构成母合金基材，改善了成品键合丝的硬度，并且在母合金基础材料表面镀金，增加了键合丝的防氧化功能，键合丝兼具铜丝和金丝的双重优点具体表现在： 
1、成本优势。键合丝主要材料为铜，较键合金丝成本大大降低，在50微 米级市场占有率优势明显，可替代键合金丝，为企业生成创造利润空间，提高其竞争力。 
2、改善了键合丝硬度。在铜材中添加微量金属成分，降低了键合丝硬度，特别是成球硬度，减少对芯片的冲击力和破坏，降低键合能量。 
3、电导、热导优势。铜基键合丝的高导电性，较金丝高约23％，在高品质器件中具有更广阔的应用前景，适用于高性能电气电路。在精细键合技术领域有助于提高功率器件性能和可靠性。导热性比键合金丝高约20％，使得封装体内的热量可以很快且更有效的散发出来，从而使键合丝可以更快的冷却下来，应力被尽快释放。在成球的过程中，高导热性还有一个优点就是：影响键合丝机械性能的热影响区变得更短，因而保证更高的键合性能。 
4、金属间化合物生长缓慢。采用铜键合丝其机械性能的稳定性要高于金键合丝，标准稳定性测试表明铜键合丝要比金键合丝高出25％--30％。 
5、储运、包装保护优势。铜基键合丝镀金使得键合丝具有良好的抗氧化性能，常温下在空气中不会氧化，因此便于包装、储运。省去了真空包装的较高技术成本，普通包装，并且对运输、存储条件要求不高；在键合过程中，传统铜线避免氧化的发生需要在无空气保护条件性进行，本发明键合丝不需要无空气保护；传统键合丝因为使用过程中氧化，因此其长度受限制，而本发明键合丝可以设计为长度不等的多种类型，其长度不受化学变化的限制。 
具体实施方式
实施例1 
一种铜基键合丝，基础材料为铜，并添加Pt、Ce、Pd微量金属元素，构成母合金基材，母合金基材制成的金属丝表面镀有一层金。其中，铜和镀层金的纯度均高于99.99％。 
所述键合丝材料中各金属成分质量比重分别是：Cu为94.9933％，微量金属元素Pt为0.0007％，Ce为0.002％，Pd为0.004％，镀层金5％，键合丝直径为50微米，金层厚度为0.6微米。 
铜基键合丝的制备包括如下步骤： 
步骤一，混合金属基材。将纯度高于99.99％的Cu，加选定的微量金属材料Pt、Ce、Pd，混合为母合金基材，做好混合熔炼前期准备。 
步骤二，熔炼母合金胚材。将上述混合金属材料在真空度0.005Mpa的熔炉内高温融化，保持熔炼温度为1800℃，精炼时间55分钟，熔炼过程中采用高纯度氩气保护，最后采用凝固方式制备直径为8毫米左右的母合金铜棒胚料。 
步骤三，拉制微细丝。将上述直径为8毫米的母合金铜棒胚料进行冷加工，加工至直径1.0毫米左右的母合金丝，然后进行拉拔处理，每次加工率为15％至20％，每次拉拔速度控制在50米/分钟左右，速度波动控制在10％；然后经过以下相似过程多次，采用每次加工率为6％至20％，将前述铜丝加工至直径0.050毫米，拉制速度控制在500米/分钟，速度变化控制在10％以内。 
步骤四，清洗金属丝。将上述微细金属丝进行表面清洗，采用超声波技术清洗，清洗介质采用无水酒精。 
步骤五，表面镀金。将上述清洗后的微细金属丝进行电镀处理，电镀液为软金电镀液，金的纯度高于99.99％，电镀电流密度4.0A/dm2，电镀速度控制在18m/min，镀层厚度为0.6微米。 
步骤六，退火处理。将表面镀金的微细铜丝进行退火处理，采用氮气保护环境下热处理，热处理温度为415℃，处理时间控制在1.8S，控制退火时张力大小2.5g，。 
步骤七，绕线。使用专用绕线机，将键合丝定长绕制在两英寸直径的线轴 上，绕线速度控制在75m/min，线间距约为5毫米，分卷长度为500米。 
步骤八，包装。采用普通包装，常温保存。 
实施例2 
一种铜基键合丝，基础材料为铜，并添加Pt、Ce、Pd微量金属元素，构成母合金基材，母合金基材制成的金属丝表面镀有一层金。其中，铜和镀层金的纯度均高于99.99％。 
所述键合丝材料中各金属成分质量比重分别是：Cu为95.9923％，微量金属元素Pt为0.0007％，Ce为0.004％，Pd为0.003％，金镀层金4％，键合丝直径为50微米，金层厚度为0.5微米。 
所述铜基键合丝的制备工艺包括如下步骤： 
步骤一，混合金属基材。将纯度高于99.99％的Cu，加选定的微量金属材料Pt、Ce、Pd，混合为母合金基材，做好混合熔炼前期准备。 
步骤二，熔炼母合金胚材。将上述混合金属材料在真空度0.002Mpa的熔炉内高温融化，保持熔炼温度为1800℃，精炼时间60分钟，熔炼过程中采用高纯度氩气保护，最后采用凝固方式制备直径为8毫米左右的母合金铜棒胚料。 
步骤三，拉制微细丝。将上述直径为8毫米的母合金铜棒胚料进行冷加工，加工至直径1.0毫米左右的母合金丝，然后进行拉拔处理，每次加工率为15％至20％，每次拉拔速度控制在50米/分钟左右，速度波动控制在10％；然后经过以下相似过程多次，采用每次加工率为6％至20％，将前述铜丝加工至直径50微米，拉制速度控制在500米/分钟，速度变化控制在10％以内。 
步骤四，清洗金属丝。将上述微细金属丝进行表面清洗，采用超声波技术清洗，清洗介质采用无水酒精。 
步骤五，表面镀金。将上述清洗后的微细金属丝进行电镀处理，电镀液为 软金电镀液，金的纯度高于99.99％，电镀电流密度0.40/dm2，电镀速度控制在15m/min，，镀层厚度为0.5微米。 
步骤六，退火处理。将表面镀金的微细铜丝进行退火处理，采用氮气保护环境下热处理，热处理温度为420℃，处理时间控制在1.7S，控制退火时张力大小2.5g。 
步骤七，绕线。使用专用绕线机，将键合丝定长绕制在两英寸直径的线轴上，绕线速度控制在65m/min，线间距约为5毫米，分卷长度为500米。 
步骤八，包装。采用普通包装，常温保存。 
实施例产品如表1所示为检测报告，与传统键合铜丝比较，新的铜基键合丝抗氧化性能强，机械稳定性，，抗拉强度大、延伸特性好，成球小，焊接后无氧化现象。 
表1焊线设备调整参数及接力检测结果 
Figure BSA00000593707900071
所述实施例包括但不限于上述。 

Claims (1)

1.一种防氧化的铜基键合丝的制备工艺，其特征在于：所述键合丝的制备工艺包括如下步骤：
步骤一，混合金属基材，将纯度高于99.99％的Cu，添加选定的微量金属材料Pt、Ce、Pd，混合为母合金基材，做好混合熔炼前期准备；
步骤二，熔炼母合金胚材，将上述混合金属材料在真空度为10-2-10-3Mpa的熔炉内高温融化，保持熔炼温度为1800℃，精炼时间50分钟以上，熔炼过程中采用高纯度氩气保护，最后采用凝固方式制备直径为8-10毫米的母合金铜棒胚料；
步骤三，拉制微细丝，将上述直径为8-10毫米的母合金铜棒胚料进行冷加工，加工至直径为1.0毫米左右的母合金丝，然后进行拉拔处理，每次加工率为15％至20％，每次拉拔速度控制在50米/分钟左右，速度波动控制在10％以内；再经过以下相似过程多次，采用每次加工率为6％至20％，将前述金属细丝加工至直径15微米-75微米，拉制速度控制在500米/分钟，速度变化控制在10％以内；
步骤四，清洗金属丝，将上述微细金属丝进行表面清洗，采用超声波技术清洗，清洗介质采用无水酒精；
步骤五，表面镀金，将上述清洗后的微细金属丝进行电镀处理，电镀液为软金电镀液，金的纯度高于99.99％，电镀电流密度0.25A/dm2-5.0A/dm2，电镀速度控制在20m/min内；
步骤六，退火处理，将表面镀金的微细铜丝进行退火处理，采用氮气保护环境下热处理，热处理温度为415℃-425℃，处理时间控制在1.0S-2.1S，控制退火时张力大小3.0g以内；
步骤七，绕线，使用专用绕线机，将键合丝定长绕制在两英寸直径的线轴上，绕线速度控制在50m/min-100m/min，线间距约为5毫米，分卷长度为50米至1000米；
步骤八，包装，采用普通包装，常温保存。
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