CN104078462A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN104078462A CN104078462A CN201410119387.2A CN201410119387A CN104078462A CN 104078462 A CN104078462 A CN 104078462A CN 201410119387 A CN201410119387 A CN 201410119387A CN 104078462 A CN104078462 A CN 104078462A
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- film
- semiconductor device
- side wall
- insulating film
- deep trench
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000011229 interlayer Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 134
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 description 46
- 238000000151 deposition Methods 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 33
- 239000010703 silicon Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 26
- 238000002955 isolation Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810381970.9A CN108565261B (zh) | 2013-03-29 | 2014-03-27 | 半导体器件及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130034805A KR102057340B1 (ko) | 2013-03-29 | 2013-03-29 | 반도체 소자 및 그 제조방법 |
KR10-2013-0034805 | 2013-03-29 |
Related Child Applications (1)
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CN201810381970.9A Division CN108565261B (zh) | 2013-03-29 | 2014-03-27 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN104078462A true CN104078462A (zh) | 2014-10-01 |
CN104078462B CN104078462B (zh) | 2018-06-05 |
Family
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Family Applications (2)
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CN201410119387.2A Active CN104078462B (zh) | 2013-03-29 | 2014-03-27 | 半导体器件及其制造方法 |
CN201810381970.9A Active CN108565261B (zh) | 2013-03-29 | 2014-03-27 | 半导体器件及其制造方法 |
Family Applications After (1)
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CN201810381970.9A Active CN108565261B (zh) | 2013-03-29 | 2014-03-27 | 半导体器件及其制造方法 |
Country Status (3)
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US (2) | US9922865B2 (zh) |
KR (1) | KR102057340B1 (zh) |
CN (2) | CN104078462B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108155152A (zh) * | 2017-12-19 | 2018-06-12 | 睿力集成电路有限公司 | 导体结构、电容器阵列结构及制备方法 |
CN108172544A (zh) * | 2016-12-08 | 2018-06-15 | 格芯公司 | 具有深沟槽隔离结构的主动及被动组件 |
CN109755174A (zh) * | 2019-01-23 | 2019-05-14 | 上海华虹宏力半导体制造有限公司 | Bcd器件深沟槽隔离方法 |
CN111933640A (zh) * | 2020-07-28 | 2020-11-13 | 杭州士兰微电子股份有限公司 | 高压集成电路及其制造方法 |
WO2021196758A1 (zh) * | 2020-04-03 | 2021-10-07 | 无锡华润上华科技有限公司 | 半导体器件及其制作方法 |
CN117219654A (zh) * | 2023-11-07 | 2023-12-12 | 杭州士兰微电子股份有限公司 | 一种高压栅极驱动电路及其制备方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9653477B2 (en) * | 2014-01-03 | 2017-05-16 | International Business Machines Corporation | Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming |
US9105712B1 (en) * | 2014-09-02 | 2015-08-11 | Tower Semiconductors Ltd. | Double RESURF LDMOS with separately patterned P+ and N+ buried layers formed by shared mask |
US10199461B2 (en) * | 2015-10-27 | 2019-02-05 | Texas Instruments Incorporated | Isolation of circuit elements using front side deep trench etch |
JP2017191858A (ja) | 2016-04-14 | 2017-10-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9786665B1 (en) * | 2016-08-16 | 2017-10-10 | Texas Instruments Incorporated | Dual deep trenches for high voltage isolation |
US10020270B2 (en) * | 2016-09-29 | 2018-07-10 | Infineon Technologies Ag | Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method |
US10262997B2 (en) * | 2017-09-14 | 2019-04-16 | Vanguard International Semiconductor Corporation | High-voltage LDMOSFET devices having polysilicon trench-type guard rings |
US10224396B1 (en) | 2017-11-20 | 2019-03-05 | Globalfoundries Inc. | Deep trench isolation structures |
US10546937B2 (en) * | 2017-11-21 | 2020-01-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structures and methods for noise isolation in semiconductor devices |
KR102212747B1 (ko) * | 2017-12-11 | 2021-02-04 | 주식회사 키 파운드리 | 보이드를 포함하는 깊은 트렌치 커패시터 및 이의 제조 방법 |
CN110021559B (zh) * | 2018-01-09 | 2021-08-24 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US10522390B1 (en) | 2018-06-21 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench isolation for integrated circuits |
KR102295882B1 (ko) * | 2019-04-26 | 2021-08-30 | 주식회사 키 파운드리 | 깊은 트렌치 구조를 갖는 반도체 소자 및 그 제조방법 |
KR102259601B1 (ko) * | 2019-04-26 | 2021-06-02 | 주식회사 키 파운드리 | 깊은 트렌치 구조를 갖는 반도체 소자 및 그 제조방법 |
KR102233049B1 (ko) * | 2019-07-24 | 2021-03-26 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
CN111584366B (zh) * | 2020-05-13 | 2023-08-18 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制造方法及半导体器件结构 |
US11380759B2 (en) | 2020-07-27 | 2022-07-05 | Globalfoundries U.S. Inc. | Transistor with embedded isolation layer in bulk substrate |
KR102386143B1 (ko) * | 2021-04-15 | 2022-04-12 | 주식회사 키파운드리 | 디스플레이 드라이버 반도체 장치 및 그 제조 방법 |
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CN111933640A (zh) * | 2020-07-28 | 2020-11-13 | 杭州士兰微电子股份有限公司 | 高压集成电路及其制造方法 |
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CN117219654A (zh) * | 2023-11-07 | 2023-12-12 | 杭州士兰微电子股份有限公司 | 一种高压栅极驱动电路及其制备方法 |
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Publication number | Publication date |
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US9922865B2 (en) | 2018-03-20 |
CN104078462B (zh) | 2018-06-05 |
US20180166322A1 (en) | 2018-06-14 |
US10395972B2 (en) | 2019-08-27 |
KR102057340B1 (ko) | 2019-12-19 |
KR20140119954A (ko) | 2014-10-13 |
CN108565261B (zh) | 2022-12-13 |
CN108565261A (zh) | 2018-09-21 |
US20140291767A1 (en) | 2014-10-02 |
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