CN104078451A - 用于射频无源件和天线的方法、设备和材料 - Google Patents
用于射频无源件和天线的方法、设备和材料 Download PDFInfo
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- CN104078451A CN104078451A CN201410121564.0A CN201410121564A CN104078451A CN 104078451 A CN104078451 A CN 104078451A CN 201410121564 A CN201410121564 A CN 201410121564A CN 104078451 A CN104078451 A CN 104078451A
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Classifications
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
- H01Q7/06—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop with core of ferromagnetic material
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- G06—COMPUTING; CALCULATING OR COUNTING
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- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
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- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/161—Disposition
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- H01L2224/161—Disposition
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- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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Abstract
描述了用于射频无源件和天线的方法、设备和材料。在一个示例中,电子组件包含具有对准磁畴的合成磁性纳米复合材料、嵌入在所述纳米复合材料内的导体以及延伸通过纳米复合材料以连接到导体的接触盘。
Description
技术领域
本说明书涉及射频无源装置和封装领域,并且具体地说,涉及使用纳米磁性复合物上的小型天线的无源装置和封装。
背景技术
小形状因子装置(比如超级本计算机、平板计算机和智能电话)容纳多达5到7个天线或更多天线,以除了其它的之外还覆盖Wi-Fi、蓝牙、蜂窝数据网络,诸如LTE(长期演进)或3G(第三代蜂窝)、FM(频率调制)无线电、GPS(全球定位系统)、RFID(射频识别)、NFC(近场通信)和DTV(数字电视广播)服务。天线的数量、它们的尺寸以及它们的RF隔离要求对装置的形状因子和设计施加了严格约束。传统上,分立组件已经被用于天线和电感器,天线和电感器通常被置于母板上。如果天线尺寸可被显著缩小,则通信装置的总体尺寸可被缩小,或者该装置的更大部分可用于其它目的。
作为一个示例,典型的流行平板计算机可除了其它的之外还具有4个天线,平面倒F蜂窝频带天线(GSM/WCDMA/LTE)和Wi-Fi/蓝牙天线。该蜂窝频带天线的尺寸可大致是35mm×10mm,并且Wi-Fi/蓝牙天线的尺寸可大致是16mm×10mm。这些天线还可具有用于优化接收的复杂形状,其影响该装置其余部分的设计自由度。
高效RF天线只是适合于在移动系统、小型系统和无线系统中所使用的未来微电子封装的小形状因子磁性元件的一个示例。用于功率输出的电感器以及其它组件也是符合需要的。虽然置于母板上的分立组件已经被用于天线和电感器,但这可显著影响最终产品的尺寸。此类组件的尺寸在物理上受材料和电气规范的限制。虽然高的相对磁导率可允许装置更小,但高磁导率材料趋向于也是导电的。这引起涡流损耗以及其它缺陷。
附图说明
本发明的实施例在附图的各图中作为示例而非作为限制例证了,附图中相似的附图标记是指类似的单元。
图1是根据本发明一实施例的RF封装的简化横截面图解。
图2是图1的RF封装的简化顶部俯视图。
图3-8是根据本发明一实施例在形成具有天线的封装时阶段序列的横截面图解,所述天线包含纳米磁性复合材料。
图9是如图3-8中所示形成的封装的横截面图解。
图10-15是根据本发明一实施例在形成具有包含纳米磁性复合材料的天线的替换封装时阶段序列的横截面图解。
图16A是根据本发明一实施例的纳米磁性复合材料的二氧化硅纳米粒子的涂层的分子式的图解。
图16B是根据本发明一实施例的纳米磁性复合材料的二氧化硅纳米粒子的涂层的替换分子式的图解。
图17A是根据本发明一实施例具有非对准磁畴的纳米磁性复合材料的图解。
图17B是根据本发明一实施例在磁畴被对准之后图17A的纳米磁性复合材料的图解。
图18A是根据本发明一实施例使用纳米磁性复合材料形成的电感器的横截面图解。
图18B是图18A的电感器的顶部俯视图。
图19是根据本发明一实施例形成微电子封装的工艺流程图。
图20是根据本发明一实施例合并微电子封装的计算装置的框图。
具体实施方式
可使用沉积在有机封装衬底上的纳米磁性材料层来制作尺寸非常小的天线。该天线可在纳米磁性复合材料层上制作,纳米磁性复合材料层本身层压或模塑在有机封装衬底上。该天线然后可与其它RF组件集成以产生例如可用在超级本、平板计算机和智能电话中的非常小的RF封装或模块。
天线的尺寸与至少三个重要因素相关:RF频率;天线衬底材料的介电常数;以及天线衬底材料的磁导率。
这些关系在数学上可写为:
(等式1)
其中λ是具有介电常数εr和磁导率μr的衬底中的波长;λ0是自由空间波长(c/f);c是自由空间中的光速,并且f是天线的RF频率。
(等式2)
其中η是具有介电常数εr和磁导率μr的衬底中的阻抗,并且η0是自由空间的阻抗。
如这些关系式(等式1和2)所指示的,天线尺寸取决于λ,λ又取决于εr和μr的乘积。阻抗η取决于μr和εr之比。因此,可通过使用具有高介电常数εr的非磁性介电材料(即其μr为1的材料)来缩小天线尺寸。
然而,当天线尺寸随介电常数的增大而减小时,阻抗也减小了。当阻抗失配增大(即η0/η)时,从天线的能量转移被减少了。这又降低了天线效率和带宽(天线可承载的数据速率)。磁导率非常高的磁性材料容易得到并用在许多应用中,然而它们不适合于制作天线,这是因为这些材料的磁导率在高频(即在几百MHz以上)陡然下落。
在RF频率具有较高磁导率和介电常数的纳米磁性复合材料层可在半导体封装之上形成。天线结构可设计在该纳米磁性材料上面,从而得到更小并且更高效的天线。天线可设计在纳米磁性衬底上,并且然后附连到封装衬底,来作为表面安装组件。用纳米磁性材料可实现天线面积的至三分之一的缩小或至更小尺寸的缩小。例如,35mm×10mm的天线可缩小到大约20mm×5mm。16mm×10mm的天线可缩小到大约10mm×10mm。这接近一些半导体封装的尺寸,从而允许在封装上形成用于无线通信应用的天线。
通过在物理上将天线附连到封装,由于更短的互连距离和缩小的RF插入损耗而进一步改进了RF性能。也不需要将RF收发器连接到外部天线的昂贵同轴RF线缆,所述外部天线可能位于平板计算机或智能电话边沿。同轴RF线缆的消除降低了RF损耗和成本。
可通过将磁性纳米粒子浸渍在环氧树脂中并且然后固化通过该浸渍所形成的复合材料来合成纳米磁性复合层。此类纳米复合衬底层保留了其如下磁性性质:在较高频率(例如高达大约5GHz-10GHz)具有合理介电常数(例如大约10-20)和磁导率(例如大约1.5-4)的。这种材料可使用商业上可得到的纳米磁性粒子(例如大约20nm到50nm的尺寸)和环氧化合物来合成。
如在下面更详细描述的,该合成材料可通过丝网印刷或模塑而集成在封装衬底或其它表面上。这些天线结构可制作在此纳米磁性层之上以获得上面提到的非常小的形状因子。这种纳米磁性材料也可被丝网印刷或层压在该封装之上,以更进一步缩小尺寸。天线结构可通过在纳米磁性层之上镀铜来创建。可在纳米磁性层上创建直通通孔(through vias)以将天线连接到RF电路和封装上的地。
如下面所描述的,纳米粒子磁性复合层可作为封装制作的一部分来构造。天线然后可制作在此纳米粒子衬底层上。天线然后可与封装内的RF传送和接收电路集成以产生小形状因子RF收发器模块,所述小形状因子RF收发器模块具有与RF电路封装大约相同的尺寸。
图1是具有天线、可选的RF电路管芯和连接盘的RF封装的横截面图。封装10构建在衬底上,在此情况下是可用焊球14(仅示出了其中两个,不过可存在更多个)附连到印刷电路板(诸如系统板、母板或逻辑板(如图9所示的38))的一个或多个堆积层(BUL)12。BUL承载含有RF电子电路的管芯16。通过BUL的通孔27将管芯与天线结构20连接,天线结构20还附连到堆积层12。
封装10含有有选择地层压在一个或多个堆积层12上面的纳米粒子磁性复合物22。通过该复合材料的通孔24通过衬底与导电路径26连接,以通过该复合物和衬底将天线20连接到管芯16。这些天线也可通过这些通孔耦合到外部电源或外部装置(诸如母板)(未示出)上的其它连接件14。替换地,这些天线20可分开构造在纳米磁性材料22上,并且然后随后附连到一个或多个RF封装堆积层12来作为表面安装组件。
该封装衬底或BUL 12还承载耦合到硅管芯和天线的各种附加分立组件28。这些将被称为无源件,但分立组件可以是无源的或有源的。该封装覆盖有电介质(诸如模塑化合物30)以密封天线、无源件、通孔和各种连接件并使它们绝缘。模塑化合物被选择成对天线所打算接收和传送的射频而言是透明的。
无源装置组件28(诸如电容器)可电连接到线路26,诸如到天线的信号线路。在此类实施例中,来自于管芯16中的信号端口的直流(DC)可被无源装置28阻断或重新路由,使得DC电流未沿连接到天线(其设计成仅接收射频(RF)信号)的信号线路或通孔24行进。在另一实施例中,由于来自于管芯中信号端口的信号的阻抗,无源装置组件对于封装中去到天线的信号线路可担任频率选择器。
有源装置组件28(诸如功率放大器、低噪声放大器或RF开关)可在附连到衬底12之前首先基于砷化镓管芯形成。在此类实施例中,有源装置(比如功率放大器)可放大所选择的RF信号并通过通孔24向天线20发送所选择的RF信号。来自于该天线的接收信号可通过天线开关和低噪声放大器装置来路由,以选择和放大所接收的RF信号。这个经放大的信号沿信号线路26通过衬底12路由到管芯16。在一替换实施例中,有源装置可以是包含功率放大器的SOC(芯片上系统)管芯。
图2是图1的封装10的顶部俯视图,其中能看到天线结构和复合材料,但不能看到衬底和无源组件。天线结构20可具有各种不同的形状,并且搁在复合材料22之上。这些天线在适当位置通过通孔24耦合到其它组件,使得可承载由天线接收的信号以便进行下变频、解调、基带处理以及其它RF阶段,并且到管芯16。
如在下面所示的,纳米粒子磁性复合材料可集成在封装衬底之上,并且然后模塑在封装之上。天线结构20可在那个复合表面30上形成图案。来自这些电路的RF输出信号线路连接到这些天线以使RF收发器模块完整。可通过在模塑材料中钻孔或以各种其它方式中的任何方式来创建到管芯的RF电路的连接通孔24。通孔可通过模塑材料的整个厚度或仅部分通过模塑材料,以连接到嵌入在模塑材料中的组件的顶面。
图3至图9是封装(诸如图1和图2的封装)在制造的渐进阶段中的横截面视图。图3是用于形成类似于图1和图2的封装的单个封装的工艺的组件初始配置的侧横截面图。在图3中,形成临时载体34以承载其它组件。在替换实施例中,该载体是固定衬底。临时载体可比所示出的更大,诸如晶圆,使得在载体的表面上同时形成许多封装。载体衬底可以是任何平面衬底,诸如带、硅晶圆、玻璃、金属或聚合物。
粘合剂36被施加到该载体之上以将无源件28、纳米磁性天线23(包含材料22、金属20、通孔24和金属盘2)以及任何其它组件固定到载体上。这些组件可以是无源装置组件和有源组件。无源组件可包含带通滤波器、电容器、电感器、电阻器和用于时钟生成的晶体。有源组件可包含功率放大器和RF开关。
无源组件28和纳米磁性天线包含放在载体之上的盘29。然后可通过复合材料钻出通孔24并且可在该复合物上形成天线结构20的图案。在另一实施例中,纳米磁性层有选择地层压在衬底上,直到设计在纳米磁性复合材料之上的天线结构。这些无源件通常在对于连接盘29分开的工艺中制作,以允许它们附连到衬底并通过衬底连接。复合材料和天线结构可分开制作,并且然后附连到载体34,或直接在临时载体上制作。
在图4中,模塑化合物30被施加在复合天线23和无源件28的上面,以嵌入这些无源组件和纳米复合天线23。模塑化合物然后可被固化以向封装上的组件提供可靠的机械支撑。可用各种方式中的任何方式,包含旋涂、注入模塑、压缩模塑和转移模塑,来施加模塑化合物。例如,模塑化合物可以是热固性材料,诸如环氧树脂、酚醛树脂、聚酰亚胺和聚苯并噁唑(PBO)。也可填充模塑化合物。在一实施例中,模塑化合物包括大致90%的填充物,诸如二氧化硅粒子。模塑化合物层然后被完全固化以加强这些装置组件的对准,并提供用于处置的刚性。
在图5中,已经通过溶解粘合剂而从临时载体34中释放模塑化合物30。该粘合剂可选择成使得在模塑化合物被完全固化之后它充当脱离剂。然后,通过恰当的温度处理,可使该粘合剂与模塑化合物底部分离。移除该载体34暴露出在无源件和天线上形成的金属盘29。粘合剂和载体可通过剥落、激光剥离和紫外线(UV)照射来释放。如所例证的,之前与载体衬底接触的每一个装置组件的暴露表面可与之前与载体衬底接触的模塑化合物层的暴露表面共平面。这提供了平坦表面,在其上可形成附加衬底层。
在图6中,该封装已经被翻转。通常,该封装将与许多其它封装一起在晶圆上形成,因此整个晶圆被翻转。新衬底12被堆积在模塑化合物30上面。新衬底在所需数量的级形成有所需数量的铜通道26,以便连接天线23和无源件28并支持它们的预计功能。提供焊料或金属路径27以形成通孔。在一个实施例中,形成单个重新分布层(RDL)扇出和堆积层来作为共平面表面上的衬底12。
在一些实施例中,首先形成具有一个或多个迹线26的形成图案的RDL,之后在RDL上面沉积堆积层,并对堆积层形成图案以形成多个开口25,开口25可暴露接触盘或迹线。各种介电材料可用于形成堆积层。在一个实施例中,使用光敏聚酰亚胺。在此类实施例中,在形成图案以形成开口之后,通过UV照射来固化光敏聚酰亚胺。
在图7中,焊球14、18在开口25中附连到重新分布层或衬底12,开口25是为此目的而形成的。在图8中,在分开的工艺中形成的管芯16被附连到中央焊球结构18。在实施例中,管芯16电接合到单个RDL,垂直地紧邻这些无源件,但在RDL 12的相对侧上。此类连接可通过拾取和放置有源管芯16进行,之后是焊料重熔或者热压接合(TCB)。如所例证的,管芯的焊球18的凸块图案与分立组件28对准以便进行最小横向路由和扇出,这可缩小(x,y)形状因子大小。替换地,可用引线接合(未示出)将管芯电接合到衬底。
在图9中,承载管芯16和天线23的封装10被接合到电路板38。球栅阵列14或任何其它适合的结构可用于将该封装附连到该板上。焊球14可采取沿衬底周边布置的导电凸块的形式。可使用各种工艺,包含丝网印刷或微球球栅阵列(BGA),来形成内部导电凸块14和外部导电凸块18。用于该PCB的导电凸块14具有比导电凸块18的高度更大的高度或具有比将管芯附连到衬底的焊球的高度更大的高度。这些更高的凸块在将管芯16电接合到衬底12之前可放置在衬底上。如图7中所示,所有导电凸块大的14和小的18同时放置在衬底上,或用不同步骤放置在衬底上。管芯16然后附连到衬底,如图8中所示,之后衬底附连到PCB。
图10是根据另一实施例的封装的替换形式的横截面视图。介电衬底60附连在布线层62上方,填充有金属通道64,以互连各种组件。一个或多个管芯66以及其它组件68(诸如无源元件)被附连在介电衬底60之上。
模塑化合物70被施加在介电衬底60上面以密封并保护管芯和无源件,并将它们保持在适当位置。在模塑化合物70上面形成第二介电层72,并且在第二介电层72之上形成金属通道74。然后可在介电层72上面形成纳米粒子复合材料76。一旦已经形成复合材料76,就可在复合材料上面形成天线结构78。通孔80可被钻到复合材料中,其如所期望的通过模塑化合物向下通过互连层64,以形成预计连接。在图10的示例中,在封装之上暴露出天线78,而管芯66和无源件68在模塑化合物70内被保护。
图11至图15是制造的渐进阶段中的封装(诸如图10的封装)的横截面视图。图11是用于形成图10中所示封装的初始起始结构的横截面视图。根据图11,管芯66(诸如芯片上系统(SOC)管芯)以类似于图3至图6中示出和描述的方式嵌入在模塑化合物70中,并且然后附连到衬底60和布线层62。
在图12中,承载管芯和布线层的晶圆被翻转回来,使得模塑化合物70的顶面被暴露,而布线层不暴露。通过模塑化合物钻出通孔80,并且施加金属层74以电镀、涂敷或填充通孔,从而提供通过模塑化合物到无源件68的导电路径或者到布线层62的导电路径,以进行与管芯或外部组件(未示出)的连接。
图13示出了在模塑化合物70和金属化层74上面形成的纳米粒子复合材料76。在图14中,在纳米粒子复合材料上面形成天线结构78。这些天线结构可通过镀铜来形成,以形成任何期望的形状和尺寸。
在图15中,在布线层62上形成球栅阵列或其它附连机构84,以允许该封装附连到更大装置,诸如母板或逻辑板。衬底和布线层可由各种不同材料中的任一种材料制成。FR4衬底可用于包含LTE频带(大约700MHz)的许多应用。
可调整并制作磁性纳米复合分子式22、76,以创建具有对准磁畴的高性能无机/有机纳米复合物。这个对准的磁性纳米复合材料非常适合于RF天线和电感器。该制作可包含表面处理和化学功能钝化的、单畴的磁性纳米粒子。
复合材料可使用有机热固性树脂(类似于CUF环氧树脂)来形成,该有机热固性树脂在低温到中温具有低粘性,或者是可流动的。在暴露于交联活化温度以上的更高温度时,该树脂可借助表面处理以化学方式接合到纳米粒子。在施加具体温度分布期间施加磁场,使得磁性粒子可自由旋转,从而能够实现磁畴对准,并且然后对该对准进行随后的玻璃化或硬化。温度分布可用于使树脂流动或者促进磁畴旋转,并以化学方式将有机树脂耦合(即交联或共价接合)到磁性纳米粒子。
可使用单畴磁畴纳米粒子。这些纳米粒子可包含钝化层,例如SiO2。该钝化趋向于使磁性纳米粒子的分散保持稳定且不聚集。存在各种不同的方式来使粒子钝化。在一个实施例中,用溶胶-凝胶工艺使粒子钝化。使用溶胶-凝胶超声空化,粒子聚集被分裂,并促进了反应性。结合溶胶-凝胶处理,可获得涂二氧化硅的粒子。涂二氧化硅的粒子可能比没有钝化层的芯粒子更容易分散在有机溶剂或树脂中。
二氧化硅纳米粒子可经过表面处理以修改粒子的粘性和表面能,并促进粒子与基体之间的共价接合。二氧化硅纳米粒子可用各种不同表面处理中的任何表面处理来涂敷,其包含氨基硅烷,诸如图16A中所示的N-氨基乙基-3-氨基丙基三甲氧基硅烷(AEAPS)。在此情况下,该处理的硅烷部分粘附到二氧化硅粒子表面,而氨基部分自由悬挂并且可与环氧树脂反应。根据对用于纳米复合物的有机树脂的选择,可使用其它表面处理、硅烷或者其它方式。替换地,可采用如图16B中所示的氨基硅烷和3缩水甘油氧基丙基三甲氧基硅烷(GPTS)的组合,使得环氧环和氨端基可共价联接,并在使用最少附加有机接合剂的情况下紧紧地耦合这些粒子,。
在上面描述的示例制作工艺中,纳米复合材料可借助剪切扩散到模子或腔中,类似于焊膏或其它粒状有机/无机混合物。如果使用优化的双分散系统来扩散树脂,则可使用二氧化硅纳米粒子与树脂的超过80个体积百分比的体积分数。在此类情况下,大粒子与小粒子的比率尽可能高,并且大粒子的体积分数除以大粒子与小粒子的体积分数的比率范围从0.7到0.8。因此,对于后者所需的所有的(大于配方的20个体积百分比)是聚合物接合剂,其允许粒子容易地扩散,并且一旦实现了磁畴对准并且达到了活化温度,就能使用热分布来共价交联这些粒子。
通过调节已钝化磁性纳米粒子和对应树脂的表面处理,有机材料的介电性质和机械性质以及甚至在交联时的收缩量都可被优化,以便用作电感器或与RF封装和天线一起使用。
在上面提到的制作工艺中,树脂和已钝化纳米粒子的溶液可膏印、缝隙涂敷、丝网印刷或通过任何可行的手段施加到封装腔或模子中。温度然后被升高到树脂交联的活化温度以下的水平(Talign)。这降低了溶液的粘性,并使得球形磁性纳米粒子容易旋转。在此温度,磁场被施加在粒子上以对准粒子的磁畴。一旦实现了对准,温度就升高到活化温度以上。更高的温度引起交联。交联将对准的粒子锁定到某一位置。替换地,代替热式加热,或除了热式加热之外,可使用其它交联刺激,即UV辐射。如上面示出和描述的,所得到的磁性纳米复合材料可施加在封装腔中并在其中固化,或者当在模子中形成时被释放,并且然后嵌入在微电子封装中或被表面安装。
图17A示出了由填充有纳米磁性粒子114的树脂112形成的纳米复合材料110。纳米粒子114随机定向,如箭头所指示的。有机接合剂用于填充通用立方形腔(generic cubicle cavity),并且因此具有这种形状。材料的具体形状和填充量可修改成适合任何具体实现或复杂形状。
图17B示出了相同材料110或填充了粒子114的树脂112,其中纳米粒子114的磁场被对准锁定。这些粒子通过施加磁场116来对准,而树脂在升高的温度Talign(其在周围温度Tamb以上并在树脂的活化温度Tact以下)。一旦这些粒子如所示对准了,温度就升高到活化温度以上到锁定温度Tlock,其将磁性纳米粒子锁定到对准位置。
为了进一步改进纳米复合物的装填密度,对准锁住工艺可在施加的压力下进行。替换地,可使用在交联时经历显著收缩的树脂。
可使用各种不同的树脂配方,诸如用于毛细管底部填充应用的树脂。树脂可被设计成在从90°C到110°C的温度是低粘性,并且然后在超过125°C的温度交联。这允许粒状混合物在共价接合之前容易流动。粒子尺寸分布可被调整成最大化环氧树脂中粒子的体积分数。例如,大球形粒子与小球形粒子的尺寸比率以及对应的浓度可被优化成将最大装填分数增加到88个体积百分比。
如所描述的,强磁场可被施加在环氧复合物上,以将每个粒子畴与控制场(governing field)对准。虽然装填的纳米粒子可能难以借助剪切来移动,但在暴露于磁场时粒子旋转仍是容易的。旋转容易部分是因为每个球形粒子直到温度升高才联接到其邻居。因此最小化了局部摩擦和流体力学交互作用。通过优化磁性粒子的钝化厚度以确保独立对准,可改进该对准。对于任何具体树脂和纳米粒子组合的参数选择将取决于所选择的具体材料以及树脂将施加到的封装材料的特性。
利用上面描述的纳米复合材料和工艺的附加应用是有可能的,包含电感器(未耦合的和耦合的)、变压器以及要求以具有高频性能的小形状因子使用磁性材料的其它应用。可调整磁性复合材料的具体规范,以适合于各种不同应用。
图18A是未耦合的电感器的横截面图解,其可用在高频调压电路中或各种其它应用中。电感器构建在衬底132上,可与许多其它组件共享衬底132,或者衬底132仅用于所例证的电感器。该衬底可以是硅、BUL、玻璃或各种其它介电材料或导电材料中的任何材料。在一个实施例中,可在电感器周围形成介电保持器(dielectric retainer)134以防止材料流动。在第二实施例中,如果树脂的粘性足够高以致它在随后的处理期间不会流动,则不需要介电保持器。图18B是图18A的电感器的顶部俯视图。电介质在电感器的四侧形成壁。作为一个示例,示出了矩形形状。电感器可以用不同的形状形成,以满足不同的封装和性能要求。
纳米复合磁性材料136的第一层沉积在介电边界内并经过处理。在此磁性层136上形成导体138(诸如铜),并且然后第二磁性层被沉积、处理并形成图案以形成带状线电感器。在此情况下,导体由附加磁性材料包围。可在导体上面形成附加介电材料或磁性材料,并且可形成通孔140以向电感器提供接触盘。图18B示出初级铜导体138由纳米复合磁性材料136覆盖;然而,连接件140是可接近的,以将该电感器连接到其它组件。
使用直导体,形成单匝电感器,然而,该导体可具有各种不同形状,以形成附加匝或属性来控制该装置的电气规范。也可用此方式通过添加附加导体线路来制作耦合的电感器。可使用单层纳米复合磁性材料来形成环形电感器(toroidal inductor)。然后可在环形配置中在磁性层周围形成绕组。纳米复合磁性材料在此情况下充当电感器的芯。也可形成其它装置。该电感器在具有天线或没有天线的封装中可以是无源件。它也可用在电源或其它微电子装置中。
图19是形成如上所述的纳米复合材料天线结构的工艺流程图。在161,将纳米粒子复合树脂材料施加到衬底。这可通过膏印、丝网印刷、缝隙涂敷、扩散、喷射点胶或其它技术施加到衬底。模子或模板可用于确定所得到的复合材料的形状和尺寸。上面所描述的复合物是填充纳米粒子的树脂(诸如聚合物接合剂)。这些纳米粒子是磁性的,并且可首先在一层或多层中涂敷有硅烷或其它材料,以改进其内的分散能力或与树脂的相容性。表面处理也可选择成提高与树脂的接合或交联能力。
衬底可包含附加电路或到其它电路的导电通道,或可包含二者。衬底也可承载其它RF装置,诸如电容器、电阻器以及其它无源装置。替换地,衬底可以是临时载体,其随后被移除并用其它装置、组件或衬底来替代。如上面所示的,衬底可在与纳米粒子复合树脂相同的表面上或在相对侧的表面上承载一个或多个管芯。
在162,复合物和衬底被加热到对准温度,即,树脂具有低粘性的温度。这个温度足够高以允许磁性纳米粒子旋转地到处移动,并且也许还处于剪切移动。在一些实施例中,这个温度在90°C-110°C之间,然而,具体温度取决于树脂和纳米粒子填充物的成分。
在163,磁场被施加到复合物以对准这些纳米粒子。在对准温度施加磁场,使得纳米粒子能够旋转成与所施加的磁场对准。备选地,可首先施加磁场,并且然后加热复合物,以允许纳米粒子随着温度增加而对准。在164对准纳米粒子之后,将树脂加热到接合温度。这个温度足以将纳米粒子锁定到某一位置,例如通过引起纳米粒子与树脂之间的共价键。在一些实施例中,这是在125°C以上的温度,然而,该温度取决于树脂的特性。在165,允许树脂固化并冷却。
在166,通过树脂钻出通孔,并且根据具体配置,通过衬底钻出通孔。这些通孔要允许所施加的天线与衬底中的电路或通道或树脂相对侧上某一其它装置中的电路或通道连接。
在167,导电路径被施加到所钻的通孔中,并且根据具体配置,施加在复合物的顶面上。这些路径允许在复合物上并通过复合物进行RF和电气连接,以将天线结构彼此连接,并将天线结构连接到最终封装中的其它装置。导电路径可由铜、铝、银或任何其它适合的导电材料制成,并且可通过汽相沉积、喷墨沉积、光刻、金属电镀或各种其它方式中的任何方式施加。
在168,形成天线结构,并将天线结构连接到在167创建的导电路径以允许到电路的RF连接。可调整每个天线的形状和配置以适合于要通过天线接收或传送的具体频率和调制。这些天线可用各种不同方式中的任何方式形成,包含印刷、金属电镀和沉积。
最后,在169,完成封装处理。用于完成该封装的操作可根据具体封装设计而变化。如上面示例中所示的,这些完成操作可包含覆盖模塑化合物中的树脂和天线,附连半导体管芯,附连衬底,以及附连焊球或焊球栅阵列。也可通过附连盖或各种其它结构、衬底或组件中的任一个来完成封装。
图20例证了根据本发明一个实现的计算装置500。计算装置500容纳系统板502。板502可包含若干组件,其包含但不限于处理器504和至少一个通信封装506。所述通信封装耦合到一个或多个天线516。处理器504在物理上和电气上耦合到板502。在本发明的一些实现中,至少一个天线516与通信封装506集成,并且通过所述封装在物理上和电气上耦合到板502。
本文描述的基于纳米磁性材料的天线由于其较小的覆盖区(footprint)而允许其集成到通信封装506,由此减小了板502和计算装置500的覆盖区。该计算装置也可具有未集成到芯片集封装上的其它天线。在另外实现中,通信封装506是处理器504的一部分。这些通信芯片中的任一个或多个可包含本文所描述的天线。其它组件中的任何一个或多个可使用本文所描述的纳米磁性复合材料来形成。
根据其应用,计算装置500可包含可以在物理上和电气上耦合到板502或者可以不在物理上和电气上耦合到板502的其它组件。这些其它组件包含但不限于易失性存储器(例如DRAM)508、非易失性存储器(例如ROM)509、闪存(未示出)、图形处理器512、数字信号处理器(未示出)、加密处理器(未示出)、芯片集514、天线516、显示器518(诸如触摸屏显示器)、触摸屏控制器520、电池522、音频编码解码器(未示出)、视频编码解码器(未示出)、功率放大器524、全球定位系统(GPS)装置526、罗盘528、加速计(未示出)、陀螺仪(未示出)、扬声器530、摄像机532和大容量存储装置(诸如硬盘驱动器)510、压缩盘(CD)(未示出)、数字多功能盘(DVD)(未示出))等等。这些组件可连接到系统板502,安装到系统板,或者与任何其它组件组合。
通信封装506使有线通信和/或无线通信能够实现,以便向计算装置500传递数据以及从计算装置500传递数据。术语“无线”及其派生词可用于描述可通过非固态介质通过使用调制的电磁辐射来传递数据的电路、装置、系统、方法、技术、通信信道等。该术语并不暗示所关联的装置不含有任何导线,不过在一些实施例中它们可能不含有任何导线。通信封装506可实现若干无线标准或协议或有线标准或协议中的任一个,其包含但不限于Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE 802.20、长期演进(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、蓝牙、以太网及其衍生,以及被指定为3G、4G、5G以及以后的任何其它无线和有线协议。计算装置500可包含多个通信封装506。例如,第一通信封装506可专用于较短距离无线通信(诸如Wi-Fi和蓝牙),并且第二通信封装506可专用于较长距离无线通信(诸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO及其它)。
计算装置500的处理器504包含封装在处理器504内的集成电路管芯。术语“处理器”可以指处理来自寄存器和/或存储器的电子数据以将该电子数据变换成可存储在寄存器和/或存储器中的其它电子数据的任何装置或部分装置。
在各种实现中,计算装置500可以是膝上型计算机、上网本、笔记本计算机、超级本计算机、智能电话、平板计算机、个人数字助理(PDA)、超级移动PC、移动电话、台式计算机、服务器、打印机、扫描仪、监视器、机顶盒、娱乐控制单元、数字摄像机、便携式音乐播放器或数字视频记录器。在另外的实现中,计算装置500可以是处理数据的任何其它电子装置。
实施例可实现为一个或多个存储芯片、控制器、CPU(中央处理单元)、使用母板互连的微芯片或集成电路、专用集成电路(ASIC)和/或现场可编程门阵列(FPGA)的一部分。
提到“一个实施例”、“一实施例”、“示例实施例”、“各种实施例”等指示如此描述的本发明实施例可包含具体特征、结构或特性,但不是每个实施例都一定包含这些具体特征、结构或特性。进一步说,一些实施例可具有对于其它实施例描述的一些特征、所有特征,或没有这些特征。
在如下说明书和权利要求书中,可使用术语“耦合”连同其派生词。“耦合”用于指示两个或更多元件彼此协作或交互作用,但它们之间可以具有中间物理组件或电气组件,或可以没有中间物理组件或电气组件。
如在权利要求书中所使用的,除非另外规定,否则使用序数形容词“第一”、“第二”、“第三”等来描述公共元件,仅仅指示相似元件的不同实例被提到,并不打算暗示如此描述的元件必须按给定顺序,或者在时间上、空间上、按等级或者以任何其它方式。
附图和前述描述给出了实施例的示例。本领域技术人员将认识到,一个或多个所描述元件可很好地组合到单个功能元件中。替换地,某些元件可被分成多个功能元件。来自一个实施例的元件可被添加到另一个实施例。例如,本文描述的工艺次序可以改变,并且不限于本文描述的方式。而且,任何流程图的动作都无需按所示出的次序实现;也不是所有动作都一定需要执行。还有,不依赖于其它动作的那些动作可与其它动作并行执行。实施例的范围决不受这些特定示例的限制。无论在说明书中是否明确给出,许多变化,诸如结构、大小和材料使用上的差异等许多变化,都是有可能的。实施例的范围至少与如下权利要求书所给出的范围一样宽。
如下示例涉及另外实施例。不同实施例的各种特征可以各种方式与所包含的一些特征和所排除的其它特征组合,以适合于各种不同应用。一些实施例涉及半导体封装,所述半导体封装具有配置用于电气连接到系统板的衬底、连接到衬底的合成磁性层以及磁性层上面的天线。该封装还可具有半导体电路管芯,并且该天线可借助延伸通过磁性层的通孔耦合到管芯。管芯可在天线的对侧连接到衬底,并且天线通过在衬底中形成的通孔耦合到电路。
在实施例中,封装可具有封装盖,并且磁性层被丝网印刷在封装盖上面。封装盖可由模塑化合物形成。封装可具有封装盖,并且磁性层可在衬底上,并且封装盖可在衬底、磁性层和天线上面形成。天线可由镀铜形成。磁性层可由环氧树脂中固化的磁性纳米粒子形成。这些纳米粒子可在固化的同时使用磁场来对准。磁性纳米粒子可以是涂敷了钝化硅烷的二氧化硅粒子,并且磁性层包含聚合物接合剂。
一些实施例涉及如下电子组件:其包含具有对准磁畴的合成磁性纳米复合材料、嵌入在纳米复合材料内的导体以及延伸通过纳米复合材料以连接到导体的接触盘。导体可以是铜条,并且接触盘各在该条的相对端以形成电感器。该铜条可以是线状的以形成单匝电感器。衬底可承载纳米复合材料,并且导体和介电壁可隔离并包含纳米复合材料。
一些实施例涉及一种方法,所述方法包含:将磁性纳米复合材料施加到具有衬底的封装上,所述纳米复合材料在环氧树脂中具有磁性纳米粒子;对准磁性纳米粒子的磁场;固化树脂以保持磁性纳米粒子的对准;将导电路径施加到纳米复合材料;以及形成到导电路径的连接器以使电子装置完整。导电路径可以是单匝电感器线圈。可通过加热环氧树脂,施加磁场,并且允许树脂在所施加的磁场下固化,来对准磁场。磁性纳米粒子可以被钝化并且涂敷二氧化硅。磁性纳米粒子可以用硅烷化合物来进行表面处理。树脂可以是有机热固化树脂。
该方法可进一步包含:在纳米复合材料上形成天线,并将这些天线连接到连接器。该方法可进一步包含:在衬底上面形成盖,其中施加纳米复合材料包括:在盖上面施加该材料,并且其中形成天线包括:在纳米复合材料上面形成天线。
一些实施例涉及包含多个磁性纳米粒子的合成磁性纳米复合材料以及有机热固化树脂。磁性纳米粒子可以被钝化并且涂敷二氧化硅。磁性纳米粒子可以用硅烷化合物进行表面处理。磁性粒子可填充树脂超过80个体积百分比。磁性粒子可具有在50nm与20nm之间范围内的各种不同尺寸。磁性粒子可在固化的同时使用磁场来对准。磁性粒子可包括涂敷了钝化硅烷的二氧化硅粒子。该树脂可包含聚合物接合剂。
一些实施例涉及具有系统板、封装和天线的计算装置,所述系统板具有耦合到系统板的主处理器,所述封装具有耦合到系统板的封装衬底,所述天线在连接到衬底的合成磁性层上面形成。该封装可包含半导体电路管芯,并且天线可借助延伸通过磁性层的通孔耦合到管芯。封装可包含封装盖,并且磁性层可被丝网印刷在封装盖上面。磁性层可在封装的衬底上,所述封装进一步包括在衬底、磁性层和天线上面形成的封装盖。天线可由镀铜形成。磁性层可由环氧树脂中固化并在被固化的同时使用磁场来对准的磁性纳米粒子形成。
Claims (25)
1. 一种半导体封装,包括:
衬底,所述衬底配置用于电气连接到系统板;
连接到所述衬底的合成磁性层;以及
在所述磁性层上面的天线。
2. 如权利要求1所述的封装,进一步包括半导体电路管芯,并且其中所述天线利用延伸通过所述磁性层的通孔耦合到所述管芯。
3. 如权利要求2所述的封装,其中所述管芯在所述天线的对侧连接到所述衬底,并且其中所述天线通过在所述衬底中形成的通孔耦合到所述电路。
4. 如权利要求1、2或3所述的封装,进一步包括封装盖,并且其中所述磁性层被丝网印刷在所述封装盖上面。
5. 如权利要求4所述的封装,其中所述封装盖由模塑化合物形成。
6. 如权利要求1所述的封装,进一步包括封装盖,并且其中所述磁性层在所述衬底上,并且所述封装盖在所述衬底、所述磁性层和所述天线上面形成。
7. 如权利要求1所述的封装,其中所述天线由镀铜形成。
8. 如权利要求1所述的封装,其中所述磁性层由环氧树脂中固化的磁性纳米粒子形成。
9. 如权利要求8所述的封装,其中所述纳米粒子在固化的同时使用磁场来对准。
10. 如权利要求8所述的封装,其中所述磁性纳米粒子包括涂敷了钝化硅烷的二氧化硅粒子。
11. 如权利要求1所述的封装,其中所述磁性层包括聚合物接合剂。
12. 一种电子组件,包括:
合成磁性纳米复合材料,其具有对准的磁畴;
嵌入在所述纳米复合材料内的导体;以及
接触盘,所述接触盘延伸通过所述纳米复合材料以连接到所述导体。
13. 如权利要求12所述的电子组件,其中所述导体是铜条,并且其中所述接触盘各在所述条的相对端以形成电感器。
14. 如权利要求13所述的电子组件,其中所述铜条是线状的,以形成单匝电感器。
15. 如权利要求12、13或14所述的电子组件,进一步包括:衬底,所述衬底用于承载所述纳米复合材料;以及所述导体和介电壁,所述导体和介电壁用于隔离并包含所述纳米复合材料。
16. 一种方法,包括:
将磁性纳米复合材料施加到具有衬底的封装上,所述纳米复合材料在环氧树脂中具有磁性纳米粒子;
对准所述磁性纳米粒子的磁场;
固化所述树脂以保持所述磁性纳米粒子的对准;
将导电路径施加到所述纳米复合材料;以及
形成到所述导电路径的连接器以使电子装置完整。
17. 如权利要求16所述的方法,其中所述导电路径是单匝电感器线圈。
18. 如权利要求16或17所述的方法,其中对准所述磁场包括:加热所述环氧树脂,施加磁场,以及允许所述树脂在所施加的磁场下固化。
19. 如权利要求16或17所述的方法,其中所述磁性纳米粒子被钝化并且涂敷了二氧化硅。
20. 如权利要求19所述的方法,其中所述磁性纳米粒子用硅烷化合物来进行表面处理。
21. 如权利要求20所述的方法,其中所述树脂是有机热固化树脂。
22. 如权利要求16所述的方法,进一步包括:在所述纳米复合材料上形成天线,以及将所述天线连接到所述连接器。
23. 如权利要求16中任一项或多项所述的方法,进一步包括:在所述衬底上面形成盖,其中施加所述纳米复合材料包括:在所述盖上面施加所述材料,并且其中形成所述天线包括:在所述纳米复合材料上面形成所述天线。
24. 一种合成磁性纳米复合材料,包括:
多个磁性纳米粒子;以及
有机热固化树脂。
25. 如权利要求24所述的材料,其中所述磁性纳米粒子被钝化,涂敷二氧化硅,用硅烷化合物来进行表面处理,填充所述树脂超过80个体积百分比,并且在固化的同时使用磁场来对准。
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US13/853,977 US9461355B2 (en) | 2013-03-29 | 2013-03-29 | Method apparatus and material for radio frequency passives and antennas |
US13/853977 | 2013-03-29 |
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CN110379778A (zh) * | 2019-07-23 | 2019-10-25 | 杭州晶通科技有限公司 | 一种低损耗无线射频芯片封装及与之配合的pcb |
CN110739292A (zh) * | 2019-09-02 | 2020-01-31 | 上海先方半导体有限公司 | 一种3d封装结构及其制作方法 |
CN110635221A (zh) * | 2019-09-20 | 2019-12-31 | 上海先方半导体有限公司 | 一种应用于天线产品的bga封装结构和方法 |
CN115732331A (zh) * | 2021-08-25 | 2023-03-03 | 星科金朋私人有限公司 | 半导体器件以及将rf天线中介层与半导体封装进行集成的方法 |
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JP2014200087A (ja) | 2014-10-23 |
US20160322707A1 (en) | 2016-11-03 |
CN104078451B (zh) | 2017-09-22 |
EP2784814A3 (en) | 2014-12-10 |
EP2784814B1 (en) | 2019-12-25 |
KR101713037B1 (ko) | 2017-03-07 |
KR20160103959A (ko) | 2016-09-02 |
KR20140118889A (ko) | 2014-10-08 |
US20140293529A1 (en) | 2014-10-02 |
US10122089B2 (en) | 2018-11-06 |
JP5951669B2 (ja) | 2016-07-13 |
US9461355B2 (en) | 2016-10-04 |
EP2784814A2 (en) | 2014-10-01 |
BR102014007462A2 (pt) | 2015-07-14 |
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