CN108292650A - 具有集成在封装构造上的化合物半导体器件的微电子器件与高频通信模块 - Google Patents
具有集成在封装构造上的化合物半导体器件的微电子器件与高频通信模块 Download PDFInfo
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- CN108292650A CN108292650A CN201580084743.4A CN201580084743A CN108292650A CN 108292650 A CN108292650 A CN 108292650A CN 201580084743 A CN201580084743 A CN 201580084743A CN 108292650 A CN108292650 A CN 108292650A
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- tube core
- communication module
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- microelectronic component
- compound semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
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- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
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- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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Abstract
本发明的实施例包括一种微电子器件,其包括:利用基于硅的衬底形成的第一管芯和耦合到第一管芯的第二管芯。该第二管芯是在不同衬底(例如化合物半导体衬底、III‑V族衬底)中利用化合物半导体材料形成的。天线单元耦合到第二管芯。该天线单元以近似4GHz或更高的频率来发送和接收通信。
Description
技术领域
本发明的实施例总体上涉及半导体器件的制造。特别地,本发明的实施例涉及具有集成在封装构造上的化合物半导体器件的微电子器件与高频通信模块。
背景技术
未来的无线产品正把比目前利用的较低GHz范围更高得多的操作频率作为目标。例如,5G(第5代移动网络或第5代无线系统)通信预期将以大于或等于15 GHz的频率操作。此外,当前的WiGig(无线吉比特联盟)产品在60GHz左右操作。包括汽车雷达和医学成像的其他应用利用毫米波频率(例如30GHz-300GHz)中的无线通信技术。对于这些无线应用,所设计的RF(射频)电路需要高质量无源匹配网络,以便适应预定义频带(在这里发生通信)的传输,以及需要高效率功率放大器和低损耗功率组合器/开关。
附图说明
图1图示根据一个实施例的微电子器件(例如封装构造架构)中的共集成的不同组件。
图2图示根据另一实施例的微电子器件(例如封装构造架构)中的共集成的不同组件。
图3图示根据另一实施例的微电子器件(例如封装构造架构)中的共集成的不同组件。
图4图示根据一个实施例的封装构造架构的模塑物中的功能电路。
图5图示根据一个实施例的计算设备700。
具体实施方式
本文中描述的是具有集成在封装构造上的化合物半导体器件的微电子器件与高频通信模块。在下面的描述中,将使用本领域技术人员通常采用的术语来描述说明性实现的各种方面,以将他们工作的实质传达给本领域的其他技术人员。然而,对于本领域技术人员将显然的是,可以仅利用描述的方面中的一些来实践本发明。为了解释的目的,阐述具体数字、材料和配置以便提供对说明性实现的透彻理解。然而,对本领域技术人员来将显然的是,可以在没有具体细节的情况下实践本发明。在其他情况下,省略或简化公知特征以便不使说明性实现模糊。
进而以对理解本发明最有帮助的方式将各种操作描述为多个分立操作,然而,该描述的顺序不应该被解释为暗示这些操作必然是顺序相关的。特别地,不需要以呈现的顺序来执行这些操作。对于高频(例如5G、WiGig)无线应用,所设计的RF电路(例如低噪声放大器、混合器、功率放大器等等)需要高质量无源匹配网络,以便适应预定义频带(在这里发生通信)的传输,以及需要高效率功率放大器和低损耗功率组合器/开关等。可以利用针对大于30GHz操作的CMOS技术,但是其具有降低的功率放大器效率并且具有低质量无源件,这主要归因于所采用的通常有损耗的硅衬底。这不仅导致较低的系统性能,而且由于生成的过量的热量而还导致增加的热要求。在一个示例中,高的热耗散归因于以下事实:必须以相控阵列布置来利用多个功率放大器以实现期望的输出功率和传输范围。在5G系统上这将甚至更严格,因为蜂窝网络(例如4G、LTE、LTE-adv)的典型传输范围是连通性所要求的传输范围(例如WiFi、WiGig)的数倍。
对于通信系统的关键部件,本设计利用非CMOS技术(例如GaAs、GaN、玻璃上无源件等)。在最佳的系统划分的情况下,可以根据另一种技术来制造要求高效率和高品质因数的关键部件。这些部件可能处在器件级(例如GaN/GaAs上的晶体管)或者处在电路级(例如集成功率放大器、低噪声放大器的III-V管芯)。如在本发明的实施例中讨论的,将以封装构造方式来形成全通信系统。
为了性能增强和热需求的放松,本设计技术允许根据同一封装上的不同技术和/或衬底来制造的共集成管芯和/或器件。本设计包括可包含用于与其他无线系统的通信的天线的封装。移动和无线通信的先前和当前世代(例如2G、3G、4G)不具有共集成在封装上的天线,因为这不是面积高效的。
在一个实施例中,本设计是5G(第5代移动网络或第5代无线系统)架构,其具有与低频电路和IPD共集成在同一封装上的基于非CMOS的收发器构建块(诸如基于III-V族的器件或管芯),以用于性能增强和热需求放松。在该布置中,每个组件都直接组装在封装中。该封装可以具有直接集成到其上的天线。5G架构以高频率(例如至少20GHz、至少28GHz、至少30GHz等)操作,并且还可以具有至端点的每秒近似1-10吉比特(Gbps)连接。在另一示例中,本设计以较低频率(例如至少4GHz、近似4GHz)操作。
在一个实施例中,由于利用模塑物内电路的对收发器组件的功能测试与最初在封装上组装它们的需要断开联系,该5G架构的设计导致降低的成本。另外,包括具有或不具有封装上天线的RFIC的无线5G模块可以作为单独的模块被设计和销售。通过利用集成的无源器件或管芯(IPD),该设计还提供更高质量无源件。可以利用IPD来实施诸如阻抗匹配电路、谐波滤波器、耦合器、功率组合器/驱动器等之类的功能块。一般地使用晶圆制造技术(例如薄膜沉积、蚀刻、光刻加工)来制造IPD。
有效地划分5G收发器允许该架构来实现更高的功率放大器效率(例如使用III-V族技术)、改进的无源件(例如利用IPD和更高效的组合器或开关)(这归因于在非CMOS衬底上制造所述无源件)。本架构提供以下能力:将所有这些不同的分立组件连同天线一起集成在封装上从而创建全5G收发器。这些组件可能处在器件级(例如分立晶体管)上或者处在电路级(例如功率放大器、低噪声放大器)上。
图1图示根据一个实施例的微电子器件(例如封装构造架构)中的共集成的不同组件。该微电子器件100(例如封装构造架构100)包括:管芯110的互补金属氧化物半导体(CMOS)电路(例如具有利用基于硅的衬底形成的至少一个基带单元和至少一个收发器单元的CMOS电路、CMOS管芯)、管芯120的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件(例如各个晶体管、晶体管的组)、管芯130的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件(例如各个晶体管、晶体管的组)、IPD 140、和具有用于发送和接收高频通信的至少一个天线的天线单元150。还可以将诸如传统表面安装无源件的附加组件安装至该封装。此外,图1的组件可以被包覆成型和用外部屏蔽物来覆盖。模塑物材料可以是低损耗非导电介质材料并且屏蔽可以由导电材料制成。天线单元150包括导电层151-153。在该示例中,通路121和导电层122将电路120耦合到CMOS电路110以用于这些组件之间的电连接。通路132和导电层131将IPD 140和管芯130耦合到管芯110的CMOS电路以用于这些组件之间的电连接。微电子器件100包括具有用于导电层和组件之间的隔离的多个介质层的衬底160。
在一个实施例中,该CMOS管芯110以倒装芯片方式处在微电子器件(例如封装构造架构)的一侧上。在一个示例中,微电子器件的第一侧(例如下表面)上的CMOS管芯110具有近似10-300um(例如近似50um)的厚度112,而在管芯120和130中形成的高功率、高效率III-V族功率放大器位于微电子器件(例如封装构造架构)的第二侧(例如上表面)上。在一个示例中,化合物半导体材料(例如GaN、GaAs)具有与硅材料相比显著更高的电子迁移率,其允许更快操作。与硅材料相比,该化合物半导体材料还具有更宽的带隙(其允许功率器件在更高温度下操作),并且在室温下向低功率器件给予更低的热噪声。该化合物半导体材料还具有直接带隙,其提供比硅的间接带隙更有利的光电性质。将无源匹配网络所需的若干无源件(例如去耦电容器、电感器)集成在IPD 140中,或者可以将无源功率组合器、滤波器或分离器组装在微电子器件(例如封装构造架构)上。在一个示例中,天线单元150与管芯120和130的功率放大器尽可能靠近地位于微电子器件(例如封装构造架构)上。取决于特定架构,该组件可以近似按比例来绘制或者可以不必按比例来绘制。在一个示例中,对于近似30GHz的频率,天线单元150具有近似2.5mm×2.5mm的尺寸,而电路120和130中的每一个都具有近似2.0mm×2.0mm的尺寸。
在另一实施例中,可以使器件中的任何彼此耦合。例如,可以将IPD 140耦合到管芯110、120和130中的至少一个。
图2图示根据另一实施例的微电子器件(例如封装构造架构)中的共集成的不同组件。该微电子器件200(例如封装构造架构100)包括:CMOS电路210(例如具有利用基于硅的衬底形成的至少一个基带单元和至少一个收发器单元的CMOS电路、CMOS管芯)、管芯220的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)形成的电路或器件、管芯230的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)形成的电路或器件、IPD 240、和具有用于发送和接收高频通信(例如5G、WiGig、至少4GHz、至少15GHz、至少25GHz、至少28GHz、至少30GHz)的至少一个天线的天线单元250。天线单元250包括导电层251-253。在该示例中,通路226和导电层224将管芯220和IPD 240耦合到管芯210以用于这些组件之间的电连接。直通路222、通路223以及导电层224和225将天线单元250耦合到IPD 240、管芯220、管芯240和管芯210以用于这些组件之间的电连接。微电子器件200包括用于导电层和组件之间的隔离的多个介质层260。
图2示出用于在器件200中的基于z方向的嵌入式管芯中实现器件200的较低高度的另一潜在开发。在图2中,管芯220和230以及IPD 240被嵌入器件200中并且可以用作CMOS电路210(例如CMOS管芯)和天线单元250之间的接口。可能将直通路用于III-V管芯(例如管芯220、电路230)至天线单元250的直接垂直连接。由无源件或开关形成的匹配网络最终也可以集成在器件200中。
在一个实施例中,该CMOS管芯210以倒装芯片方式处在微电子器件(例如封装构造架构)的一侧上。在一个示例中,管芯210具有近似10-300um(例如近似50um)的厚度212,而在管芯220和230中形成的高功率、高效率III-V族功率放大器被嵌入微电子器件200(例如封装构造架构)中,如图2图示的。在一个示例中,管芯220和230的电路或器件被嵌入器件200的介质层260内。将无源匹配网络所需的无源件集成在IPD 240中,或者可以将无源功率组合器、或分离器组装在微电子器件(例如封装构造架构)上。天线单元250与管芯220和230的功率放大器尽可能靠近地位于微电子器件(例如封装构造架构)上。取决于特定架构,该组件可以近似按比例来绘制或者可以不必按比例来绘制。
在另一实施例中,可以使器件中的任何彼此耦合。例如,可以将IPD 140耦合到管芯210、220和230中的至少一个。
另一集成技术是在附接至微电子器件(例如通信模块)之前最初将化合物半导体器件或管芯(例如所有III-V族器件/管芯)、分立SMT组件和IPD一起模塑在单独的包覆成型组件(或模块)中。图3图示根据一个实施例的微电子器件(例如封装构造架构)中的包括包覆成型组件的共集成的不同组件。该微电子器件300(例如封装构造架构100)包括CMOS管芯310(例如利用基于硅的衬底形成的CMOS基带和收发器电路、CMOS管芯)和由管芯和/或器件组成的包覆成型组件320。在一个示例中,第一包覆成型组件320包括:管芯322的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件、管芯323的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件、和IPD 324。管芯322-324彼此耦合或者耦合到封装或衬底360上的其他组件。第二包覆成型组件330可以包括:管芯331的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件、管芯333的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件、IPD 332、和用于将组件330的这些管芯与器件300的其他组件、电路或管芯耦合的布线或再分布层338。该管芯331-333使用布线或再分布层338彼此耦合或耦合到其他组件,并且还在封装或衬底360上。具有至少一个天线的天线单元350发射并接收高频通信(例如5G、WiGig、至少4GHz、至少15GHz、至少25GHz、至少28GHz、至少30GHz)。该天线单元350包括导电层351-353。在该示例中,通路327和328以及导电层325和326将管芯322和323以及IPD 324耦合到CMOS管芯310以用于这些组件之间的电连接。该天线单元350通过没有被示出的连接耦合到器件300的电路和管芯。该微电子器件300包括具有用于导电层和器件300的组件之间的隔离的多个介质层的衬底360。
图3图示根据一个实施例的可以组合分立器件以在模塑物中创建功能电路(如图4中示出的)的架构。可以首先就功能性测试包覆成型组件的电路,然后如果该电路起作用则将其组装在微电子器件或模块上。以该方式,在电路或器件之一故障的情况下,包覆成型组件实现较低的成本。可以使用模塑物上的布线或再分布层来实施包覆成型组件的模塑物内电路,所述布线或再分布层将承载器件之间的布线或者可以将布线直接设计在微电子器件(例如封装)上。该包覆成型组件400包括:管芯430的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件、管芯432的利用化合物半导体材料(例如III-V族材料、砷化镓(GaAs)、氮化镓(GaN)、化合物半导体管芯等)或有机材料形成的电路或器件、IPD 420-423、以及级间匹配IPD 440。该组件400包括用于通过电连接耦合管芯和IPD的一个或多个导电层450。在一个示例中,将该级间匹配IPD耦合到管芯430和432。
在一个实施例中,具有包覆成型管芯的5G封装构造架构和CMOS SoC与天线单元一起被组装在同一双面封装上。在图3中,包覆成型组件320已经在封装之上布线,而组件330包括布线层(RDL)。模塑组件可以是包括在不同衬底上制造的器件级组件连同用于匹配或去耦的无源网络的独立电路。该器件之间的布线可以在封装上或者在模塑物上的布线层上。
因为能够在组装之前测试与衬底的剩余部分分开的模塑物内电路,模塑物内电路降低了成本。本设计创建了可以被单独制造和销售的独立5G模块。
将认识到,在片上系统实施例中,该管芯可以包括处理器、存储器、通信电路等等。尽管图示了单个芯片,但是可能没有管芯、有一个或若干管芯被包括于晶圆的同一区域中。
在一个实施例中,该微电子器件可以是使用体硅或绝缘体上硅衬底形成的结晶衬底。在其他实现中,可以使用备选材料(其可以与硅组合或者可以不与硅组合)来形成该微电子器件,所述备选材料包括但不限于锗、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓、砷化铟镓、锑化镓、或者III-V族或IV族材料的其他组合。尽管在这里描述了可以由其来形成衬底的材料的几个示例,但是可以用作在其上可构建半导体器件的基础的任何材料都落入本发明的实施例的范围内。
图5图示根据本发明的一个实施例的计算设备700。该计算设备700容纳板702。该板702可以包括许多组件,其包括但不限于至少一个处理器704和至少一个通信芯片706。该至少一个处理器704物理且电耦合到板702。在一些实现中,该至少一个通信芯片706也物理且电耦合到板702。在另外的实现中,该通信芯片706是处理器704的一部分。在一个示例中,该通信芯片706(例如微电子器件100、200、300等)包括天线单元720(例如天线单元150、250、350)。
取决于其应用,计算设备700可以包括可能或者可能没有物理且电耦合到板702的其他组件。这些其他组件包括但不限于易失性存储器(例如 DRAM710、711)、非易失性存储器(例如ROM 712)、闪速存储器、图形处理器716、数字信号处理器、密码处理器、芯片集714、天线单元720、显示器、触摸屏显示器730、触摸屏控制器722、电池732、音频编解码器、视频编解码器、功率放大器715、全球定位系统(GPS)设备726、指南针724、感测设备740(例如加速度计)、陀螺仪、扬声器、相机750、和大容量存储设备(诸如硬盘驱动器、压缩盘(CD)、数字多功能盘(DVD)等等)。
该通信芯片706实现用于数据去到和来自计算设备700的传递的无线通信。术语“无线”以及其派生词可以被用来描述可通过使用调制电磁辐射通过非固态介质来传送数据的电路、设备、系统、方法、技术、通信信道等。该术语并不暗示相关联的设备不包含任何导线,尽管在某些实施例中它们可能不包含。通信芯片706可以实施许多无线标准或协议中的任一个,包括但不限于Wi-Fi(IEEE 802.11家族)、WiMAX (IEEE 802.16家族)、WiGig、IEEE 802.20、长期演进 (LTE),Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、蓝牙、其派生物,以及被指定为3G、4G、5G以及以上的任何其他无线协议。该计算设备700可以包括多个通信芯片706。例如,第一通信芯片706可以专用于较短范围无线通信(诸如WiFi、WiGig和蓝牙)并且第二通信芯片706可以专用于较长范围无线通信(诸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO、5G以及其他)。
该计算设备700的至少一个处理器704包括封装在至少一个处理器704内的集成电路管芯。在本发明的一些实现中,该处理器的集成电路管芯包括一个或多个器件,诸如根据本发明的实施例的实现的微电子器件(例如微电子器件100、200、300等等)。术语“处理器”可以指代处理来自寄存器和/或存储器的电子数据以将该电子数据转换为可存储在寄存器和/或存储器中的其他电子数据的任何设备或设备的部分。
该通信芯片706还包括封装在通信芯片706内的集成电路管芯。根据本发明的实施例的另一实现,该通信芯片的集成电路管芯包括一个或多个微电子器件(例如微电子器件100、200、300等)。
下面的示例关于另外的实施例。示例1是一种微电子器件,其包括:利用基于硅的衬底形成的第一管芯、耦合到第一管芯的第二管芯。该第二管芯是在不同衬底(例如化合物半导体衬底、III-V族衬底)中利用化合物半导体材料形成的。天线单元耦合到第二管芯。该天线单元以近似4GHz或更高的频率(例如至少4GHz、至少15GHz、至少25GHz、至少30GHz等)来发送和接收通信。
在示例2中,示例1的主题可以可选地包括耦合到至少一个管芯的集成无源管芯(IPD)。该IPD包括用于无源匹配网络的无源件。
在示例3中,示例1-2中的任一个的主题可以可选地包括,该第一管芯具有互补金属氧化物半导体(CMOS)基带单元和收发器单元。该第一管芯以倒装芯片方式处在微电子器件的第一侧的表面上。
在示例4中,示例1-3中的任一个的主题可以可选地包括,该第二管芯具有利用III-V族材料形成的附接在微电子器件的第二侧的表面上的功率放大器。该微电子器件的第一侧与该微电子器件的第二侧相对。
在示例5中,示例1-4中的任一个的主题可以可选地包括,该微电子器件进一步具有耦合到至少一个管芯的第三管芯。该第三管芯具有在不同衬底(例如化合物半导体衬底、III-V族衬底)中利用化合物半导体材料形成的器件或电路。
在示例6中,示例1-5中的任一个的主题可以可选地包括,该微电子器件具有用于5G通信的5G封装架构。
在示例7中,一种通信模块(或芯片)包括利用基于硅的衬底形成的第一管芯和耦合到第一电路的第二管芯。该第二管芯是在不同的衬底中利用化合物半导体材料形成的,其被嵌入该通信模块内。天线单元耦合到第一和第二管芯中的至少一个。该天线单元以近似15GHz或更高的频率(例如至少15GHz、至少25GHz、至少30GHz等)来发送和接收通信。
在示例8中,示例7的主题可以可选地包括,该通信模块具有耦合到至少一个管芯的集成无源管芯(IPD)。该IPD被嵌入通信模块内。
在示例9中,示例7-8中的任一个的主题可以可选地包括,第一管芯具有互补金属氧化物半导体(CMOS)基带和收发器电路。该第一管芯以倒装芯片方式处在通信模块的第一侧上。该第二管芯包括利用III-V族材料形成的嵌入通信模块内的功率放大器。
在示例10中,示例7-9中的任一个的主题可以可选地包括耦合到至少一个管芯的第三管芯。该第三管芯具有利用化合物半导体材料形成的器件或电路。该第三管芯被嵌入通信模块内。
在示例11中,示例7-10中的任一个的主题可以可选地包括,该通信模块其包括用于5G通信的5G封装架构。
在示例12中,一种计算设备包括用来处理数据的至少一个处理器和耦合到该至少一个处理器的通信模块或芯片。该通信模块或芯片包括利用基于硅的衬底形成的第一管芯和具有耦合到第一管芯的第二管芯的第一包覆成型组件。该第二管芯具有在不同的衬底中利用化合物半导体材料形成的器件或电路。该通信模块或芯片还包括耦合到第二管芯的天线单元。该天线单元以近似15GHz或更高的频率(例如至少15GHz、至少25GHz、至少30GHz等)来发送和接收通信。
在示例13中,示例12的主题可以可选地包括,该第一包覆成型组件具有耦合到至少一个管芯的集成无源管芯(IPD)。该IPD包括用于无源匹配网络的无源件。
在示例14中,示例12-13中的任一个的主题可以可选地包括,该第一管芯具有互补金属氧化物半导体(CMOS)基带和收发器电路。该第一管芯以倒装芯片方式处在通信模块或芯片的第一侧的表面上。
在示例15中,示例12-14中的任一个的主题可以可选地包括,该第二管芯具有利用III-V族材料形成的功率放大器。
在示例16中,示例12-15中的任一个的主题可以可选地包括,该第一包覆成型组件附接在通信模块或芯片的第二侧的表面上。
在示例17中,示例12-16中的任一个的主题可以可选地包括,该第一包覆成型组件具有耦合到至少一个管芯的第三管芯。该第三管芯具有利用化合物半导体材料形成的器件或电路。
在示例18中,示例12-17中的任一个的主题可以可选地包括具有耦合到至少一个管芯的第四管芯的第二包覆成型组件。该第四管芯具有在衬底中利用化合物半导体材料形成的器件或电路。
在示例19中,示例12-18中的任一个的主题可以可选地包括,该通信模块或芯片其是用于5G通信的5G封装架构。
在示例20中,示例12-19中的任一个的主题可以可选地包括,该计算设备进一步包括存储器、显示模块和输入模块。该存储器、显示模块和输入模块在芯片芯片集平台上并且彼此操作通信。
Claims (22)
1.一种微电子器件,包括:
利用基于硅的衬底形成的第一管芯;
耦合到第一管芯的第二管芯,该第二管芯是在不同的衬底中利用化合物半导体材料形成的;以及
耦合到第二管芯的天线单元,该天线单元用于以近似4GHz或更高的频率来发送和接收通信。
2.根据权利要求1所述的微电子器件,进一步包括:
耦合到至少一个管芯的集成无源管芯(IPD),该IPD包括用于无源匹配网络的无源件。
3.根据权利要求2所述的微电子器件,其中该第一管芯包括互补金属氧化物半导体(CMOS)基带单元和收发器单元,该第一管芯以倒装芯片方式处在微电子器件的第一侧的表面上。
4.根据权利要求3所述的微电子器件,其中该第二管芯包括利用III-V族材料形成的附接在微电子器件的第二侧的表面上功率放大器。
5.根据权利要求4所述的微电子器件,其中该微电子器件的第一侧与该微电子器件的第二侧相对。
6.根据权利要求1所述的微电子器件,进一步包括:
耦合到至少一个管芯的第三管芯,该第三管芯具有利用化合物半导体材料形成的器件或电路。
7.根据权利要求1所述的微电子器件,其中该微电子器件包括用于5G通信的5G封装架构。
8.一种通信模块,包括:
利用基于硅的衬底形成的第一管芯;
耦合到第一管芯的第二管芯,该第二管芯是在不同的衬底中利用化合物半导体材料形成的,其被嵌入该通信模块内;以及
耦合到第一和第二管芯中的至少一个的天线单元,该天线单元用于以近似15GHz或更高的频率来发送和接收通信。
9.根据权利要求1所述的通信模块,进一步包括:
耦合到至少一个管芯的集成无源管芯(IPD),该IPD被嵌入通信模块内。
10.根据权利要求9所述的通信模块,其中该第一管芯包括互补金属氧化物半导体(CMOS)基带和收发器电路,该第一管芯以倒装芯片方式处在通信模块的第一侧上。
11.根据权利要求10所述的通信模块,其中该第二管芯包括利用III-V族材料形成的嵌入通信模块内的功率放大器、低噪声放大器、开关和其他电路中的至少一个。
12.根据权利要求8所述的通信模块,进一步包括:
耦合到至少一个管芯的第三管芯,该第三管芯具有利用化合物半导体材料形成的器件或电路。
13.根据权利要求12所述的通信模块,其中该第三管芯被嵌入通信模块内。
14.根据权利要求8所述的通信模块,其中该通信模块包括用于5G通信的5G封装架构。
15.一种计算设备,包括:
用来处理数据的至少一个处理器;以及
耦合到至少一个处理器的通信模块或芯片,该通信模块或芯片包括:
利用基于硅的衬底形成的第一管芯;
具有耦合到第一管芯的第二管芯的第一包覆成型组件,该第二管芯具有在不同的衬底中利用化合物半导体材料形成的器件或电路;以及
耦合到第二管芯的天线单元,该天线单元用于以近似15GHz或更高的频率来发送和接收通信。
16.根据权利要求15所述的计算设备,其中该第一包覆成型组件进一步包括耦合到至少一个管芯的集成无源管芯(IPD),该IPD包括用于无源匹配网络的无源件。
17.根据权利要求16所述的计算设备,其中该第一管芯包括互补金属氧化物半导体(CMOS)基带和收发器电路,该第一管芯以倒装芯片方式处在通信模块或芯片的第一侧的表面上。
18.根据权利要求15所述的计算设备,其中第二电路包括利用III-V族材料形成的功率放大器、低噪声放大器、和开关中的至少一个,其中该第一包覆成型组件被附接在通信模块或芯片的第二侧的表面上。
19.根据权利要求15所述的计算设备,其中该第一包覆成型组件进一步包括耦合到至少一个管芯的第三管芯,该第三管芯具有利用化合物半导体材料形成的器件。
20.根据权利要求15所述的计算设备,进一步包括:
具有耦合到至少一个管芯的第四管芯的第二包覆成型组件,该第四管芯具有在衬底中利用化合物半导体材料形成的器件或电路。
21.根据权利要求15所述的计算设备,其中该通信模块或芯片包括用于5G通信的5G封装架构。
22.根据权利要求15所述的计算设备,进一步包括:存储器;显示模块;和输入模块,该存储器、显示模块和输入模块在芯片芯片集平台上并且彼此操作通信。
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2016
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2020
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US11387200B2 (en) | 2022-07-12 |
US10629551B2 (en) | 2020-04-21 |
TWI721040B (zh) | 2021-03-11 |
US20200227366A1 (en) | 2020-07-16 |
US20180342472A1 (en) | 2018-11-29 |
WO2017111975A1 (en) | 2017-06-29 |
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