CN104064528A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN104064528A
CN104064528A CN201410050906.4A CN201410050906A CN104064528A CN 104064528 A CN104064528 A CN 104064528A CN 201410050906 A CN201410050906 A CN 201410050906A CN 104064528 A CN104064528 A CN 104064528A
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China
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mentioned
moulding resin
screen
semiconductor element
semiconductor device
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CN201410050906.4A
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CN104064528B (zh
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野村泰造
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Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Abstract

本发明提供可小型化、薄型化、具有良好屏蔽性能且具备视认性佳的激光标识的半导体装置及其制造方法。实施方式的半导体装置10具备：布线基板2；在布线基板2上搭载的半导体元件1a～1i；密封半导体元件1a～1i的成型树脂6；在成型树脂6上设置的屏蔽层8。成型树脂6具有向表面照射激光形成的标识7，在具有该标识7的成型树脂6上设置屏蔽层8。

Description

半导体装置及其制造方法
相关申请
本申请以日本专利申请2013-59350号(申请日：2013年3月22日)及日本专利申请2013-258043号(申请日：2013年12月13日)为基础申请，享受其优先权。本申请通过参照该基础申请，包含该基础申请的全部内容。
技术领域
本发明的实施方式涉及半导体装置及其制造方法。
背景技术
近年，便携电话等的便携无线通信设备中，避免内置的各种电子部件产生的电磁噪音干涉无线系统成为大课题。以往，这样的噪音抑制对策一般采用用金属板包围(金属板屏蔽)包含发生源的电路的方法。但是，该方法会导致设备的大型化、厚背化的问题。
因而，研究对作为噪音源的电子部件本身进行屏蔽的对策，其一是开发了在树脂密封的半导体封装的表面通过镀敷设置屏蔽层的技术(以下，称为屏蔽半导体封装)。这样的半导体封装中，除了能将部件本身屏蔽之外，屏蔽层可以非常薄地形成，因此，具有可以进一步实现设备的小型化、薄型化的优点。
但是，由激光标识（marking）产品信息时，可能贯通屏蔽层而损坏屏蔽性。另外，为了防止这样的贯通而使标识的深度变浅时，存在视认性降低的问题。
发明内容
本发明解决的课题是提供可小型化、薄型化、具有良好屏蔽性能且具备视认性佳的激光标识的半导体装置及其制造方法。
实施方式的半导体装置具备：布线基板；在上述布线基板上搭载的半导体元件；密封上述半导体元件的成型树脂；以及在上述成型树脂上设置的屏蔽层；上述成型树脂具有向表面照射激光而形成的标识，在具备该标识的成型树脂上设置上述屏蔽层。
实施方式的半导体装置的制造方法，具备：在布线基板上搭载半导体元件的步骤；用成型树脂密封上述半导体元件的步骤；对上述成型树脂的表面照射激光而施加标识的步骤；在施加了上述标识的成型树脂表面形成屏蔽层的步骤。
附图说明
图1是一实施方式的半导体装置的构造的截面图。
图2是一实施方式的半导体装置的制造方法的工艺流程的示图。
标号说明：1a～1i…半导体元件(半导体芯片)，2…布线基板，3…外部电极，4…信号线，5…接地线，6…成型树脂，7…标识部，8…屏蔽层，10…半导体装置(半导体封装)。
具体实施方式
以下，参照附图说明实施方式。
图1是一实施方式的半导体装置的构造的截面图。
图1所示半导体装置(半导体封装)10是所谓的层叠型半导体装置，多个半导体元件(半导体芯片)1a、1b、1c、…、1h在布线基板2上多级层叠，另外，半导体元件1a～1h之外的一个半导体元件1i搭载在布线基板2上。层叠的半导体元件的数，附图的例中为8，即8级层叠，但是半导体元件的层叠数没有特别限定，例如，也可以是1层、2层、5层、16层、32层等。附图的例中，8级层叠的半导体元件1a～1h是NAND闪存（NAND flash），半导体元件1a～1h之外的搭载在布线基板2上的半导体元件1i是NAND控制器，半导体装置10具有与存储装置例如存储卡和/或SSD等同等的功能。
多个半导体元件1a～1i都采用硅基板等的半导体基板。另一方面，布线基板2采用例如以树脂基板、陶瓷基板、玻璃基板等的绝缘基板作为基体材料的多层布线基板。作为应用树脂基板的布线基板2，一般有多层覆铜层叠板(多层印刷布线板)等。在布线基板2的底面侧设置与外部连接用的电极焊盘(衬垫)，其上固定焊料凸起等的外部电极3。另外，在布线基板2的顶面侧，设置包含信号图形及接地图形的表面布线层2a，各半导体元件1a～1i与这些信号图形及接地图形分别经由信号线4及接地线5连接。而且，在布线基板2的内部，设置与表面布线层2a和外部电极3侧的电极焊盘连接的内层布线层2b。
这样，在搭载多个半导体元件1a～1i的布线基板2的顶面，以包覆半导体元件1a～1i和/或在布线基板2顶面设置的表面布线层2a、连接半导体元件1a～1i和表面布线层2a的信号线4及接地线5的方式，使成型树脂6成型。该成型树脂6将半导体元件1a～1i和/或表面布线层2a、信号线4及接地线5等密封，形成绝缘层，例如，采用含有碳黑等的填充剂的环氧树脂等。
在成型树脂6的顶面，通过激光的照射，刻印产品编号、制造年月日、制造工厂等的产品信息(图1中，7表示由激光照射的刻印形成的标识部)，而且，在该刻印的成型树脂6的全体表面，即，顶面及侧面以及与成型树脂6的侧面接续的布线基板2的侧面，形成采用金属镀敷或金属溅射形成的屏蔽层8。屏蔽层8主要用于屏蔽半导体元件1a～1i产生的电磁噪音。从而，通过与在布线基板2的底面设置的接地用的外部电极电气连接，确保屏蔽性。
形成屏蔽层8的金属材料没有特别限定，例如，可采用含有Cu、Ni、Cr或B、Co或W的Ni合金等。另外，屏蔽层8可以是单层，也可以是具有多个层的层叠构造。而且，其厚度没有特别限定，但是为了实现半导体装置10的小型化、薄型化，最好尽可能薄。通过使屏蔽层8的厚度变薄，可以提高标识部7的视认性。即，屏蔽层8的厚度变厚时，激光照射形成的刻印的深度小，视认性降低。通过使屏蔽层8的厚度变薄，可以防止视认性的降低。但是，太薄会导致屏蔽层8的机械强度降低，根据情况，其一部分可能剥离，导致屏蔽性降低。根据这样的观点，屏蔽层8优选在2～4μm的范围。
本实施方式中，标识部7的刻印的深度约30μm，屏蔽层8由3μm厚的Ni层及Cu层的2层构造构成。
另外，为了进行激光标识，优选YAG激光和/或YVO4(钒酸钇)激光等，因为其光斑直径小，可形成约30μm左右深度的刻印。本实施方式中，使用光斑直径0.1mm的YAG激光。
图示虽然省略，本实施方式中，可以形成使在成型树脂6埋设的接地线5的环形(loop)顶部与屏蔽层8接触的构成。通过使接地线5和屏蔽层8接触，可以强化半导体装置10的接地，进一步提高屏蔽性能。另外，为了使接地线5的环形顶部和屏蔽层8接触，如后述，连接接地线5时，使环形高度比信号线4的环形高度高，即，使接地线5的环形顶部的位置比信号线4的环形顶部的位置高，并在进行激光标识时使接地线5的环形顶部露出即可。通过在接地线5露出的成型树脂6形成屏蔽层8，可以使接地线5和屏蔽层8接触。另外，该场合，成型树脂6的材料优选使用透明至半透明的可透视内部的材料。从而，可以确认应露出的接地线5尤其是其环形顶部的位置，在激光标识时，可以可靠且适当地使接地线5露出。
另外，在本实施方式的另外的例中，能够针对接地图形截面在侧面露出的布线基板2形成屏蔽层8。该场合，通过预先以越过半导体装置10的外形线的方式形成接地图形，以切断接地图形的方式进行后述的分离，能够使接地图形截面在形成屏蔽层8前的布线基板20的侧面露出。
本实施方式的半导体装置中，在由激光照射形成了标识部7的成型树脂6的表面形成屏蔽层8，因此可以抑制装置的大型化、厚背化，并具有标识部7佳的视认性和可靠性高的屏蔽性能。另外，接地线5和屏蔽层8接触的场合，可以强化接地，进一步提高屏蔽性能。
接着，用图2所示流程图说明该实施方式的半导体装置10的制造方法的一例。
如图2所示，工序主要具备如下6个工序：制造组合基板的工序(101)；搭载半导体元件的工序(102)；通过成型树脂进行密封的工序(103)；分离各个半导体装置的工序(104)；通过激光照射施加标识的工序(105)；形成屏蔽层的工序(106)。
首先，在组合基板的制造工序(101)中，制作多个布线基板2矩阵状排列的构造的组合基板。
然后，在半导体元件搭载工序(102)中，在上述各布线基板的顶面顺序层叠半导体元件1a、1b、1c、…1h，搭载半导体元件1i，并将设置在布线基板2的信号图形及接地图形和各半导体元件1a～1i经由信号线4及接地线5连接。此时，接地线5和信号线4优选使接地线5的环形顶部位于比信号线4的环形顶部高的位置。从而，可以在后续工序容易使接地线5和屏蔽层8接触，可以实现接地的强化以及屏蔽性能的提高。
然后，在基于成型树脂的密封工序(103)中，在搭载了半导体元件1a～1i的组合基板的顶面侧，使成型树脂6例如环氧树脂一次成型，密封半导体元件1a～1i。成型树脂6的成型可以采用转印(transfer)成型法、压缩(compression)成型法、灌注(potting)法、印刷法等的成型法。
然后，在分离工序(104)中，为了制作各个半导体装置10，将成型树脂6与组合基板一起切断，分离为多个搭载了半导体元件1a～1i的布线基板2。切断可以采用金刚石刀片等的刀片。
然后，在标识工序(105)中，通过具有YAG激光等的激光标识装置，在布线基板2上的成型树脂6的顶面刻印产品名、产品编号、制造年月日、制造工厂等的产品信息。刻印的深度从良好视认性及操作性的观点看，优选20～40μm左右，25～35μm左右更好，最好设为约30μm。
刻印优选为使成型树脂6内的接地线5的环形顶部露出。这是因为，在半导体元件搭载工序(102)中，连接接地线5时优选预先调节其环形高度。另外，激光照射前，优选用安装于激光标识装置的照相机等识别接地线5的环形顶部的位置，在进行对准校正后进行激光照射。通过这样的对准校正，可以使接地线5的环形顶部可靠地露出。即，在基于成型树脂的密封工序(103)中，由于树脂流动，接地线5的环形顶部的位置变化。从而，通过用照相机等识别其变化的位置并进行对准校正，可以使接地线5的环形顶部可靠地露出。另外，用照相机等识别接地线5的环形顶部的位置时，成型树脂6的材料必须采用可透视材料。
然后，在屏蔽层形成工序(106)中，在激光标识的成型树脂6的全体表面即顶面及全体侧面实施金属镀敷或金属溅射，形成例如3μm厚的屏蔽层8。从而，制作图1所示的半导体装置10。
另外，实施金属镀敷或金属溅射时，为了提高屏蔽层8与成型树脂6的粘合性，优选预先使成型树脂6的表面的至少顶面粗糙化。本方法中，为了大量获得半导体装置，切断一次密封的成型树脂。从而，成型树脂6的侧面由于切断而粗糙化，因此基本不需要粗糙化，但是必要时，也可以进一步追加粗糙化工序。粗糙化的方法也可以采用珩磨(honing)等的方法，但是，基于激光照射的方法可以将标识工序(105)使用的激光装置用作粗糙化装置，不必重新准备粗糙化用的装置，可以实现工序的简化、工序期间的缩短，因此是优选的。
该粗糙化工序可以在标识工序(105)之前或者之后进行，但是，从标识部7的视认性观点看，优选在标识工序(105)前进行。即，若在标识工序(105)后进行，则激光刻印的深度缩小，视认性降低。
根据以上说明的半导体装置的制造方法，通过金属镀敷或金属溅射形成屏蔽层，因此，可以形成厚度非常薄的屏蔽层，实现半导体装置的小型化、薄型化。
而且，在成型树脂的表面通过激光标识产品信息等后，形成屏蔽层，因此，可以具有可靠性高的屏蔽性能，并可以形成具有充分视认性的标识部。即，在屏蔽层形成后进行激光标识的场合，激光可能贯通屏蔽层，导致屏蔽降低。另外，未贯通的场合，刻印浅，无法获得充分的视认性。上述半导体装置的制造方法中，在激光标识后形成屏蔽层，因此，没有贯通屏蔽层的危险，可形成具有充分深度的刻印。从而，可以具有可靠性高的屏蔽性能，且形成具有充分视认性的标识部。
而且，在屏蔽层形成后进行激光标识的场合，一般金属的激光反射率大，因此，必须增大激光输出，激光材料的消耗激增，需要频繁更换，而上述方法中，对激光吸收良好的成型树脂进行标识，因此激光输出低，无需频繁更换，可以实现制造成本的降低、操作效率的提高。
以上，虽然说明了本发明的实施方式，但是这些实施方式只是例示，而不是限定发明的范围。这些新实施方式可以各种方式实施，在不脱离发明的要旨的范围，可以进行各种省略、置换、变更。这些实施方式及其变形是发明的范围和要旨所包含的，也是权利要求的范围记载的发明及其等同的范围所包含的。

Claims (6)

1.一种半导体装置，其特征在于，具备：
布线基板；
在上述布线基板上搭载的半导体元件；
密封上述半导体元件的成型树脂；以及
在上述成型树脂上设置的屏蔽层；
上述成型树脂具有向表面照射激光而形成的标识，在具备上述标识的成型树脂上设置上述屏蔽层；
还具备与上述半导体元件连接的接地线及信号线，
上述接地线的至少一部分与上述屏蔽层接触，
上述接地线的环形顶部位于比上述信号线的环形顶部高的位置。
2.一种半导体装置，其特征在于，具备：
布线基板；
在上述布线基板上搭载的半导体元件；
密封上述半导体元件的成型树脂；以及
在上述成型树脂上设置的屏蔽层；
上述成型树脂具有向表面照射激光而形成的标识，在具备上述标识的成型树脂上设置上述屏蔽层。
3.如权利要求2所述的半导体装置，其特征在于，
还具备与上述半导体元件连接的接地线及信号线，
上述接地线的至少一部分与上述屏蔽层接触。
4.一种半导体装置的制造方法，其特征在于，具备：
在布线基板上搭载半导体元件的步骤；
用成型树脂密封上述半导体元件的步骤；
对上述成型树脂的表面照射激光而施加标识的步骤；和
在施加了上述标识的成型树脂表面形成屏蔽层的步骤。
5.如权利要求4所述的半导体装置的制造方法，其特征在于，
上述标识步骤包含使上述成型树脂的表面粗糙化的步骤。
6.如权利要求4或5所述的半导体装置的制造方法，其特征在于，
上述标识步骤中，隔着上述成型树脂确认与上述元件连接的接地线的位置，根据该确认的位置，在上述成型树脂的表面施加标识。
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TWI667742B (zh) * 2016-09-23 2019-08-01 日商東芝記憶體股份有限公司 Semiconductor device and method of manufacturing same
CN107978589A (zh) * 2016-10-25 2018-05-01 Tdk株式会社 电子部件模块及其制造方法
CN110574131B (zh) * 2017-05-15 2022-05-17 株式会社村田制作所 层叠型电子部件和层叠型电子部件的制造方法
CN110574131A (zh) * 2017-05-15 2019-12-13 株式会社村田制作所 层叠型电子部件和层叠型电子部件的制造方法
CN111937136A (zh) * 2018-07-24 2020-11-13 拓自达电线株式会社 屏蔽封装体及屏蔽封装体的制造方法
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CN109564905A (zh) * 2018-10-30 2019-04-02 长江存储科技有限责任公司 Ic封装
CN112563247A (zh) * 2021-02-24 2021-03-26 甬矽电子(宁波)股份有限公司 一种电磁屏蔽封装结构和电磁屏蔽封装方法

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US20140284775A1 (en) 2014-09-25
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