CN104009049A - 包含具有镜像晶体管布局的像素单元的图像传感器 - Google Patents
包含具有镜像晶体管布局的像素单元的图像传感器 Download PDFInfo
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- CN104009049A CN104009049A CN201310503867.4A CN201310503867A CN104009049A CN 104009049 A CN104009049 A CN 104009049A CN 201310503867 A CN201310503867 A CN 201310503867A CN 104009049 A CN104009049 A CN 104009049A
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- 238000009792 diffusion process Methods 0.000 claims abstract description 41
- 238000007667 floating Methods 0.000 claims abstract description 40
- 238000006073 displacement reaction Methods 0.000 claims description 14
- 230000000295 complement effect Effects 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 description 21
- 230000005540 biological transmission Effects 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 208000024754 bloodshot eye Diseases 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 201000005111 ocular hyperemia Diseases 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/775,747 | 2013-02-25 | ||
US13/775,747 US9165959B2 (en) | 2013-02-25 | 2013-02-25 | Image sensor with pixel units having mirrored transistor layout |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104009049A true CN104009049A (zh) | 2014-08-27 |
CN104009049B CN104009049B (zh) | 2017-11-14 |
Family
ID=51369642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310503867.4A Active CN104009049B (zh) | 2013-02-25 | 2013-10-23 | 包含具有镜像晶体管布局的像素单元的图像传感器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9165959B2 (zh) |
CN (1) | CN104009049B (zh) |
HK (1) | HK1199552A1 (zh) |
TW (1) | TWI523213B (zh) |
Cited By (17)
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CN105405854A (zh) * | 2014-09-05 | 2016-03-16 | 全视科技有限公司 | 图像传感器像素及制造所述图像传感器像素的方法 |
CN106960853A (zh) * | 2016-01-11 | 2017-07-18 | 爱思开海力士有限公司 | 图像传感器 |
CN108200367A (zh) * | 2017-02-03 | 2018-06-22 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统组件 |
CN108200366A (zh) * | 2017-02-03 | 2018-06-22 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统 |
CN108234910A (zh) * | 2017-02-03 | 2018-06-29 | 思特威电子科技(美国)有限公司 | 成像系统和形成堆叠成像系统的方法及数字相机成像系统组件 |
CN108257990A (zh) * | 2016-12-29 | 2018-07-06 | 三星电子株式会社 | 图像传感器和包括其的电子设备 |
CN108305884A (zh) * | 2017-02-03 | 2018-07-20 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统组件 |
CN108538869A (zh) * | 2017-03-06 | 2018-09-14 | 爱思开海力士有限公司 | 图像传感器 |
CN109887947A (zh) * | 2019-04-03 | 2019-06-14 | 思特威(上海)电子科技有限公司 | 具有紧凑设计布局的图像传感器 |
CN109979930A (zh) * | 2017-12-28 | 2019-07-05 | 南京大学 | 基于复合介质栅光敏探测器的2×2阵列布局及工作方法 |
CN110098206A (zh) * | 2018-01-29 | 2019-08-06 | 爱思开海力士有限公司 | 包括具有8共享像素结构的像素块的图像传感器 |
CN110192281A (zh) * | 2016-10-14 | 2019-08-30 | 华为技术有限公司 | Cmos图像传感器 |
CN110544699A (zh) * | 2018-05-28 | 2019-12-06 | 爱思开海力士有限公司 | 包括具有公共选择晶体管的单元像素块的图像传感器 |
CN110581966A (zh) * | 2018-11-02 | 2019-12-17 | 豪威科技股份有限公司 | 具有镜像对称像素列的图像传感器 |
CN111129043A (zh) * | 2018-10-31 | 2020-05-08 | 台湾积体电路制造股份有限公司 | 具有均匀感光区阵列的成像装置 |
CN113540137A (zh) * | 2020-04-22 | 2021-10-22 | 豪威科技股份有限公司 | 具有经移位彩色滤光片阵列图案及位线对的图像传感器 |
CN116325780A (zh) * | 2020-11-19 | 2023-06-23 | 华为技术有限公司 | 固态成像设备 |
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JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
US9653511B2 (en) | 2015-08-11 | 2017-05-16 | Omnivision Technologies, Inc. | CMOS image sensor with peninsular ground contracts and method of manufacturing the same |
US9583527B1 (en) | 2016-01-28 | 2017-02-28 | Omnivision Technologies, Inc. | Contact resistance reduction |
JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
US10044960B2 (en) | 2016-05-25 | 2018-08-07 | Omnivision Technologies, Inc. | Systems and methods for detecting light-emitting diode without flickering |
KR102610588B1 (ko) * | 2016-11-08 | 2023-12-07 | 에스케이하이닉스 주식회사 | 이미지 센서 및 이미지 센서 형성 방법 |
KR20180076054A (ko) | 2016-12-27 | 2018-07-05 | 삼성전자주식회사 | 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치 |
US10070090B2 (en) * | 2017-02-03 | 2018-09-04 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with selectable shutter modes and in-pixel CDS |
US20180227513A1 (en) * | 2017-02-03 | 2018-08-09 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with selectable shutter modes and in-pixel cds |
KR102356913B1 (ko) * | 2017-07-03 | 2022-02-03 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR102358317B1 (ko) * | 2017-07-20 | 2022-02-08 | 에스케이하이닉스 주식회사 | 이미지 센서 |
US10079261B1 (en) * | 2017-08-17 | 2018-09-18 | Omnivision Technologies, Inc. | Raised electrode to reduce dark current |
KR102472591B1 (ko) * | 2018-01-29 | 2022-12-01 | 에스케이하이닉스 주식회사 | 이미지 센서 |
US10797091B2 (en) * | 2018-05-31 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor imaging device having improved dark current performance |
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KR20200145891A (ko) * | 2019-06-19 | 2020-12-31 | 삼성전자주식회사 | 얽힌 픽셀을 포함하는 깊이 센서 |
JP6891340B2 (ja) * | 2019-09-30 | 2021-06-18 | シェンチェン グーディックス テクノロジー カンパニー リミテッド | 画像センサの半導体構造、チップおよび電子デバイス |
KR20210054092A (ko) | 2019-11-04 | 2021-05-13 | 삼성전자주식회사 | 서로 거울 대칭인 픽셀들을 포함하는 이미지 센서 |
US11212457B2 (en) * | 2020-05-28 | 2021-12-28 | Omnivision Technologies, Inc. | High dynamic range CMOS image sensor design |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090090845A1 (en) * | 2007-10-05 | 2009-04-09 | Micron Technology, Inc. | Method and apparatus providing shared pixel architecture |
CN102469271A (zh) * | 2010-11-08 | 2012-05-23 | 索尼公司 | 固态图像感测设备和相机系统 |
CN102547166A (zh) * | 2010-12-17 | 2012-07-04 | 全视科技有限公司 | 具有补充电容性耦合节点的图像传感器 |
CN102655573A (zh) * | 2011-03-03 | 2012-09-05 | 株式会社东芝 | 固体拍摄装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
JP5149143B2 (ja) * | 2008-12-24 | 2013-02-20 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
JP5029624B2 (ja) | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
-
2013
- 2013-02-25 US US13/775,747 patent/US9165959B2/en active Active
- 2013-09-24 TW TW102134357A patent/TWI523213B/zh active
- 2013-10-23 CN CN201310503867.4A patent/CN104009049B/zh active Active
-
2014
- 2014-12-29 HK HK14113027.4A patent/HK1199552A1/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090090845A1 (en) * | 2007-10-05 | 2009-04-09 | Micron Technology, Inc. | Method and apparatus providing shared pixel architecture |
CN102469271A (zh) * | 2010-11-08 | 2012-05-23 | 索尼公司 | 固态图像感测设备和相机系统 |
CN102547166A (zh) * | 2010-12-17 | 2012-07-04 | 全视科技有限公司 | 具有补充电容性耦合节点的图像传感器 |
CN102655573A (zh) * | 2011-03-03 | 2012-09-05 | 株式会社东芝 | 固体拍摄装置 |
Cited By (33)
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CN105405854A (zh) * | 2014-09-05 | 2016-03-16 | 全视科技有限公司 | 图像传感器像素及制造所述图像传感器像素的方法 |
CN106960853A (zh) * | 2016-01-11 | 2017-07-18 | 爱思开海力士有限公司 | 图像传感器 |
KR20170083783A (ko) * | 2016-01-11 | 2017-07-19 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR102473154B1 (ko) * | 2016-01-11 | 2022-12-02 | 에스케이하이닉스 주식회사 | 이미지 센서 |
CN110192281A (zh) * | 2016-10-14 | 2019-08-30 | 华为技术有限公司 | Cmos图像传感器 |
US10910429B2 (en) | 2016-10-14 | 2021-02-02 | Huawei Technologies Co., Ltd. | CMOS image sensor |
CN110192281B (zh) * | 2016-10-14 | 2022-06-14 | 华为技术有限公司 | Cmos图像传感器 |
CN108257990A (zh) * | 2016-12-29 | 2018-07-06 | 三星电子株式会社 | 图像传感器和包括其的电子设备 |
CN108257990B (zh) * | 2016-12-29 | 2023-05-30 | 三星电子株式会社 | 图像传感器和包括其的电子设备 |
CN108234910A (zh) * | 2017-02-03 | 2018-06-29 | 思特威电子科技(美国)有限公司 | 成像系统和形成堆叠成像系统的方法及数字相机成像系统组件 |
CN108200366A (zh) * | 2017-02-03 | 2018-06-22 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统 |
CN108305884B (zh) * | 2017-02-03 | 2021-11-23 | 思特威(上海)电子科技股份有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统组件 |
CN108200367A (zh) * | 2017-02-03 | 2018-06-22 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统组件 |
CN108200367B (zh) * | 2017-02-03 | 2020-09-18 | 思特威(上海)电子科技有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统组件 |
CN108200366B (zh) * | 2017-02-03 | 2020-08-11 | 思特威(上海)电子科技有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统 |
CN108305884A (zh) * | 2017-02-03 | 2018-07-20 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统组件 |
CN108538869A (zh) * | 2017-03-06 | 2018-09-14 | 爱思开海力士有限公司 | 图像传感器 |
CN108538869B (zh) * | 2017-03-06 | 2022-04-29 | 爱思开海力士有限公司 | 图像传感器 |
CN109979930A (zh) * | 2017-12-28 | 2019-07-05 | 南京大学 | 基于复合介质栅光敏探测器的2×2阵列布局及工作方法 |
CN110098206B (zh) * | 2018-01-29 | 2023-12-26 | 爱思开海力士有限公司 | 包括具有8共享像素结构的像素块的图像传感器 |
CN110098206A (zh) * | 2018-01-29 | 2019-08-06 | 爱思开海力士有限公司 | 包括具有8共享像素结构的像素块的图像传感器 |
CN110544699B (zh) * | 2018-05-28 | 2023-09-08 | 爱思开海力士有限公司 | 包括具有公共选择晶体管的单元像素块的图像传感器 |
CN110544699A (zh) * | 2018-05-28 | 2019-12-06 | 爱思开海力士有限公司 | 包括具有公共选择晶体管的单元像素块的图像传感器 |
CN111129043B (zh) * | 2018-10-31 | 2022-07-15 | 台湾积体电路制造股份有限公司 | 像素传感器、图像传感器及形成像素传感器的方法 |
CN111129043A (zh) * | 2018-10-31 | 2020-05-08 | 台湾积体电路制造股份有限公司 | 具有均匀感光区阵列的成像装置 |
CN110581966B (zh) * | 2018-11-02 | 2020-07-07 | 豪威科技股份有限公司 | 具有镜像对称像素列的图像传感器 |
CN110581966A (zh) * | 2018-11-02 | 2019-12-17 | 豪威科技股份有限公司 | 具有镜像对称像素列的图像传感器 |
CN109887947A (zh) * | 2019-04-03 | 2019-06-14 | 思特威(上海)电子科技有限公司 | 具有紧凑设计布局的图像传感器 |
CN109887947B (zh) * | 2019-04-03 | 2024-01-30 | 思特威(上海)电子科技股份有限公司 | 具有紧凑设计布局的图像传感器 |
CN113540137A (zh) * | 2020-04-22 | 2021-10-22 | 豪威科技股份有限公司 | 具有经移位彩色滤光片阵列图案及位线对的图像传感器 |
CN113540137B (zh) * | 2020-04-22 | 2022-12-13 | 豪威科技股份有限公司 | 具有经移位彩色滤光片阵列图案及位线对的图像传感器 |
US11716546B2 (en) | 2020-04-22 | 2023-08-01 | Omnivision Technologies, Inc. | Image sensor with shifted color filter array pattern and bit line pairs |
CN116325780A (zh) * | 2020-11-19 | 2023-06-23 | 华为技术有限公司 | 固态成像设备 |
Also Published As
Publication number | Publication date |
---|---|
US20140239152A1 (en) | 2014-08-28 |
HK1199552A1 (zh) | 2015-07-03 |
TW201434143A (zh) | 2014-09-01 |
US9165959B2 (en) | 2015-10-20 |
TWI523213B (zh) | 2016-02-21 |
CN104009049B (zh) | 2017-11-14 |
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