HK1199552A1 - 包含具有鏡像晶體管布局的像素單元的圖像傳感器 - Google Patents
包含具有鏡像晶體管布局的像素單元的圖像傳感器Info
- Publication number
- HK1199552A1 HK1199552A1 HK14113027.4A HK14113027A HK1199552A1 HK 1199552 A1 HK1199552 A1 HK 1199552A1 HK 14113027 A HK14113027 A HK 14113027A HK 1199552 A1 HK1199552 A1 HK 1199552A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- pixel units
- transistor layout
- mirrored transistor
- mirrored
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/775,747 US9165959B2 (en) | 2013-02-25 | 2013-02-25 | Image sensor with pixel units having mirrored transistor layout |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1199552A1 true HK1199552A1 (zh) | 2015-07-03 |
Family
ID=51369642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK14113027.4A HK1199552A1 (zh) | 2013-02-25 | 2014-12-29 | 包含具有鏡像晶體管布局的像素單元的圖像傳感器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9165959B2 (zh) |
| CN (1) | CN104009049B (zh) |
| HK (1) | HK1199552A1 (zh) |
| TW (1) | TWI523213B (zh) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| US20160071892A1 (en) * | 2014-09-05 | 2016-03-10 | Omnivision Technologies, Inc. | Dopant configuration in image sensor pixels |
| US9653511B2 (en) | 2015-08-11 | 2017-05-16 | Omnivision Technologies, Inc. | CMOS image sensor with peninsular ground contracts and method of manufacturing the same |
| KR102473154B1 (ko) * | 2016-01-11 | 2022-12-02 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| US9583527B1 (en) | 2016-01-28 | 2017-02-28 | Omnivision Technologies, Inc. | Contact resistance reduction |
| JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
| US10044960B2 (en) | 2016-05-25 | 2018-08-07 | Omnivision Technologies, Inc. | Systems and methods for detecting light-emitting diode without flickering |
| WO2018068322A1 (en) * | 2016-10-14 | 2018-04-19 | Huawei Technologies Co., Ltd. | Cmos image sensor |
| KR102610588B1 (ko) * | 2016-11-08 | 2023-12-07 | 에스케이하이닉스 주식회사 | 이미지 센서 및 이미지 센서 형성 방법 |
| KR20180076054A (ko) | 2016-12-27 | 2018-07-05 | 삼성전자주식회사 | 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치 |
| KR20180077969A (ko) * | 2016-12-29 | 2018-07-09 | 삼성전자주식회사 | 이미지 센서 및 그 이미지 센서를 구비한 전자 장치 |
| US10070090B2 (en) * | 2017-02-03 | 2018-09-04 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with selectable shutter modes and in-pixel CDS |
| US10002901B1 (en) * | 2017-02-03 | 2018-06-19 | Smartsense Technology (U.S.) Inc. | Stacked image sensor with embedded FPGA and pixel cell with selectable shutter modes and in-pixel CDs |
| US9991298B1 (en) * | 2017-02-03 | 2018-06-05 | SmartSens Technology (US), Inc. | Stacked image sensor pixel cell with a charge amplifier and selectable shutter modes and in-pixel CDS |
| US10070081B2 (en) * | 2017-02-03 | 2018-09-04 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with dynamic range enhancement and selectable shutter modes and in-pixel CDS |
| US20180227529A1 (en) * | 2017-02-03 | 2018-08-09 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with selectable shutter modes and in-pixel cds |
| US20180227513A1 (en) * | 2017-02-03 | 2018-08-09 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with selectable shutter modes and in-pixel cds |
| KR102333610B1 (ko) * | 2017-03-06 | 2021-12-03 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| KR102356913B1 (ko) | 2017-07-03 | 2022-02-03 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| KR102358317B1 (ko) * | 2017-07-20 | 2022-02-08 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| US10079261B1 (en) * | 2017-08-17 | 2018-09-18 | Omnivision Technologies, Inc. | Raised electrode to reduce dark current |
| CN109979930B (zh) * | 2017-12-28 | 2020-12-04 | 南京大学 | 基于复合介质栅光敏探测器的2×2阵列布局及工作方法 |
| KR102568744B1 (ko) * | 2018-01-29 | 2023-08-22 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| KR102472591B1 (ko) * | 2018-01-29 | 2022-12-01 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| KR102591525B1 (ko) * | 2018-05-28 | 2023-10-23 | 에스케이하이닉스 주식회사 | 공통 선택 트랜지스터를 가진 유닛 픽셀 블록을 포함하는 이미지 센서 |
| US10797091B2 (en) * | 2018-05-31 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor imaging device having improved dark current performance |
| WO2020022098A1 (ja) * | 2018-07-24 | 2020-01-30 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子および半導体素子の製造方法 |
| US10734419B2 (en) * | 2018-10-31 | 2020-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Imaging device with uniform photosensitive region array |
| US10483303B1 (en) * | 2018-11-02 | 2019-11-19 | Omnivision Technologies, Inc. | Image sensor having mirror-symmetrical pixel columns |
| CN109887947B (zh) * | 2019-04-03 | 2024-01-30 | 思特威(上海)电子科技股份有限公司 | 具有紧凑设计布局的图像传感器 |
| KR20200145891A (ko) * | 2019-06-19 | 2020-12-31 | 삼성전자주식회사 | 얽힌 픽셀을 포함하는 깊이 센서 |
| KR102358599B1 (ko) * | 2019-09-30 | 2022-02-08 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | 이미지 센서의 반도체 구조, 칩 및 전자 장치 |
| KR20210054092A (ko) | 2019-11-04 | 2021-05-13 | 삼성전자주식회사 | 서로 거울 대칭인 픽셀들을 포함하는 이미지 센서 |
| US11284045B2 (en) | 2020-04-22 | 2022-03-22 | OmniVision Technologies. Inc. | Image sensor with shifted color filter array pattern and bit line pairs |
| US11212457B2 (en) * | 2020-05-28 | 2021-12-28 | Omnivision Technologies, Inc. | High dynamic range CMOS image sensor design |
| CN116325780A (zh) * | 2020-11-19 | 2023-06-23 | 华为技术有限公司 | 固态成像设备 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
| US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
| JP5149143B2 (ja) * | 2008-12-24 | 2013-02-20 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
| JP5029624B2 (ja) | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5664141B2 (ja) * | 2010-11-08 | 2015-02-04 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
| US8294077B2 (en) * | 2010-12-17 | 2012-10-23 | Omnivision Technologies, Inc. | Image sensor having supplemental capacitive coupling node |
| JP5377549B2 (ja) * | 2011-03-03 | 2013-12-25 | 株式会社東芝 | 固体撮像装置 |
-
2013
- 2013-02-25 US US13/775,747 patent/US9165959B2/en active Active
- 2013-09-24 TW TW102134357A patent/TWI523213B/zh active
- 2013-10-23 CN CN201310503867.4A patent/CN104009049B/zh active Active
-
2014
- 2014-12-29 HK HK14113027.4A patent/HK1199552A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN104009049B (zh) | 2017-11-14 |
| TW201434143A (zh) | 2014-09-01 |
| TWI523213B (zh) | 2016-02-21 |
| US9165959B2 (en) | 2015-10-20 |
| US20140239152A1 (en) | 2014-08-28 |
| CN104009049A (zh) | 2014-08-27 |
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