HK1209901A1 - 用於圖像傳感器的大-小像素方案及其使用 - Google Patents
用於圖像傳感器的大-小像素方案及其使用Info
- Publication number
- HK1209901A1 HK1209901A1 HK15110390.8A HK15110390A HK1209901A1 HK 1209901 A1 HK1209901 A1 HK 1209901A1 HK 15110390 A HK15110390 A HK 15110390A HK 1209901 A1 HK1209901 A1 HK 1209901A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensors
- big small
- small pixel
- pixel scheme
- scheme
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/070,286 US9305949B2 (en) | 2013-11-01 | 2013-11-01 | Big-small pixel scheme for image sensors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1209901A1 true HK1209901A1 (zh) | 2016-04-08 |
Family
ID=53006392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK15110390.8A HK1209901A1 (zh) | 2013-11-01 | 2015-10-22 | 用於圖像傳感器的大-小像素方案及其使用 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9305949B2 (zh) |
| CN (1) | CN104617116B (zh) |
| HK (1) | HK1209901A1 (zh) |
| TW (1) | TWI502737B (zh) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9324759B2 (en) | 2013-12-19 | 2016-04-26 | Omnivision Technologies, Inc. | Image sensor pixel for high dynamic range image sensor |
| JP6334203B2 (ja) * | 2014-02-28 | 2018-05-30 | ソニー株式会社 | 固体撮像装置、および電子機器 |
| JP6617428B2 (ja) * | 2015-03-30 | 2019-12-11 | 株式会社ニコン | 電子機器 |
| US20170207269A1 (en) * | 2016-01-14 | 2017-07-20 | Omnivision Technologies, Inc. | Image sensor contact enhancement |
| KR102541701B1 (ko) * | 2016-01-15 | 2023-06-13 | 삼성전자주식회사 | 씨모스 이미지 센서 |
| CN105681690B (zh) * | 2016-03-10 | 2018-05-25 | 长春长光辰芯光电技术有限公司 | 双转移栅高动态范围图像传感器像素的全局快门控制方法 |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) * | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| US9848148B1 (en) * | 2016-06-17 | 2017-12-19 | Semiconductor Components Industries, Llc | Methods and apparatus for a multiple storage pixel imaging system |
| JP2018152696A (ja) * | 2017-03-13 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、その駆動方法および電子機器 |
| US10181490B2 (en) * | 2017-04-03 | 2019-01-15 | Omnivision Technologies, Inc. | Cross talk reduction for high dynamic range image sensors |
| CN107426472A (zh) * | 2017-06-01 | 2017-12-01 | 深圳市矽旺半导体有限公司 | 宽动态范围图像传感器系统及其实现方法 |
| US9991309B1 (en) * | 2017-07-05 | 2018-06-05 | Omnivision Technologies, Inc. | CMOS image sensor having enhanced near infrared quantum efficiency |
| KR102473149B1 (ko) * | 2017-11-13 | 2022-12-02 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US10964738B2 (en) * | 2018-10-02 | 2021-03-30 | Omnivision Technologies, Inc. | Image sensor having a source follower transistor with a multi-thickness gate dielectric |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| RU2709461C1 (ru) * | 2019-02-04 | 2019-12-18 | Вячеслав Михайлович Смелков | Способ формирования видеосигнала на кристалле сенсора, изготовленном по технологии КМОП |
| KR20210003492A (ko) | 2019-07-02 | 2021-01-12 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP6891340B2 (ja) * | 2019-09-30 | 2021-06-18 | シェンチェン グーディックス テクノロジー カンパニー リミテッド | 画像センサの半導体構造、チップおよび電子デバイス |
| US11451717B2 (en) * | 2019-11-05 | 2022-09-20 | Omnivision Technologies, Inc. | Multi-cell pixel array for high dynamic range image sensors |
| US11284045B2 (en) * | 2020-04-22 | 2022-03-22 | OmniVision Technologies. Inc. | Image sensor with shifted color filter array pattern and bit line pairs |
| US11658198B2 (en) * | 2020-08-20 | 2023-05-23 | Omnivision Technologies, Inc. | Image sensor with through silicon fin transfer gate |
| CN112382641A (zh) * | 2020-11-11 | 2021-02-19 | 上海韦尔半导体股份有限公司 | 高动态范围图像传感器的环形像素阵列 |
| CN116250064A (zh) * | 2020-11-12 | 2023-06-09 | 索尼半导体解决方案公司 | 成像元件和成像装置 |
| US11375150B1 (en) * | 2021-06-08 | 2022-06-28 | Omnivision Technologies, Inc. | Image sensor with three readout approach for phase detection auto focus and image sensing photodiodes |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6825884B1 (en) | 1998-12-03 | 2004-11-30 | Olympus Corporation | Imaging processing apparatus for generating a wide dynamic range image |
| KR100674925B1 (ko) | 2004-12-07 | 2007-01-26 | 삼성전자주식회사 | 허니콤 구조의 능동 픽셀 센서 |
| KR100657863B1 (ko) * | 2005-02-07 | 2006-12-14 | 삼성전자주식회사 | 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서 |
| US20070040922A1 (en) * | 2005-08-22 | 2007-02-22 | Micron Technology, Inc. | HDR/AB on multi-way shared pixels |
| KR100761829B1 (ko) * | 2005-12-15 | 2007-09-28 | 삼성전자주식회사 | 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법 |
| KR100776147B1 (ko) * | 2006-05-04 | 2007-11-15 | 매그나칩 반도체 유한회사 | 운송 게이트를 전위 웰과 통합하여 확장된 화소의 동적범위를 갖는 이미지센서 센서 |
| JP5584982B2 (ja) * | 2009-02-09 | 2014-09-10 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
| US7863647B1 (en) | 2007-03-19 | 2011-01-04 | Northrop Grumman Systems Corporation | SiC avalanche photodiode with improved edge termination |
| KR100835894B1 (ko) | 2007-06-18 | 2008-06-09 | (주)실리콘화일 | 다이내믹 레인지가 넓고, 색재현성과 해상능력이 우수한픽셀어레이 및 이미지센서 |
| US7825966B2 (en) | 2007-06-29 | 2010-11-02 | Omnivision Technologies, Inc. | High dynamic range sensor with blooming drain |
| US8619168B2 (en) | 2007-09-28 | 2013-12-31 | Regents Of The University Of Minnesota | Image sensor with high dynamic range imaging and integrated motion detection |
| US20090200580A1 (en) | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Image sensor and pixel including a deep photodetector |
| EP2180513A1 (en) | 2008-10-27 | 2010-04-28 | Stmicroelectronics SA | Near infrared/color image sensor |
| JP5251563B2 (ja) | 2009-02-04 | 2013-07-31 | 日本テキサス・インスツルメンツ株式会社 | 撮像装置 |
| US8405750B2 (en) | 2009-06-08 | 2013-03-26 | Aptina Imaging Corporation | Image sensors and image reconstruction methods for capturing high dynamic range images |
| US8970706B2 (en) | 2011-09-22 | 2015-03-03 | Basil Henry Scott | Dual pixel pitch imaging array with extended dynamic range |
| JP2013157883A (ja) * | 2012-01-31 | 2013-08-15 | Sony Corp | 固体撮像素子およびカメラシステム |
| US9568606B2 (en) | 2012-03-29 | 2017-02-14 | Canon Kabushiki Kaisha | Imaging apparatus for distance detection using high and low sensitivity sensors with inverted positional relations |
| US8969775B2 (en) * | 2013-02-28 | 2015-03-03 | Omnivision Technologies, Inc. | High dynamic range pixel having a plurality of amplifier transistors |
| US20140246561A1 (en) | 2013-03-04 | 2014-09-04 | Omnivision Technologies, Inc. | High dynamic range pixel having a plurality of photodiodes with a single implant |
| US9324759B2 (en) | 2013-12-19 | 2016-04-26 | Omnivision Technologies, Inc. | Image sensor pixel for high dynamic range image sensor |
-
2013
- 2013-11-01 US US14/070,286 patent/US9305949B2/en active Active
-
2014
- 2014-03-03 CN CN201410074543.8A patent/CN104617116B/zh active Active
- 2014-03-21 TW TW103110752A patent/TWI502737B/zh active
-
2015
- 2015-10-22 HK HK15110390.8A patent/HK1209901A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW201519421A (zh) | 2015-05-16 |
| CN104617116A (zh) | 2015-05-13 |
| TWI502737B (zh) | 2015-10-01 |
| US9305949B2 (en) | 2016-04-05 |
| US20150123172A1 (en) | 2015-05-07 |
| CN104617116B (zh) | 2017-10-03 |
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