JP6891340B2 - 画像センサの半導体構造、チップおよび電子デバイス - Google Patents
画像センサの半導体構造、チップおよび電子デバイス Download PDFInfo
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Description
Claims (20)
- 画像センサの半導体構造であって、
前記画像センサの半導体構造は、半導体基板と、前記半導体基板の上に配置された複数の画素群とを備え、前記画素群のそれぞれは、同じ行に位置し互いに隣接する第一の画素および第二の画素と、別の行に位置し互いに隣接する第三の画素および第四の画素を備え、前記第一の画素および前記第三の画素は斜めに配置され、前記第一の画素および前記第三の画素は同じ色であることと、
前記第一の画素、前記第二の画素、前記第三の画素および前記第四の画素のそれぞれは、2列2行に配置された4つのサブ画素を備え、各画素の前記4つのサブ画素は浮遊拡散領域を共有し、前記浮遊拡散領域は前記4つのサブ画素の光検出器に囲まれ、前記光検出器は光を電荷に変換するためのものであることと、
出力回路は、前記第一の画素および前記第三の画素によって共有され、前記第一の画素および前記第三の画素によって共有される前記出力回路は、前記第二の画素および前記第四の画素によって共有されず、前記第一の画素および前記第三の画素によって共有される前記出力回路は、前記第一の画素と前記第三の画素との境界を横切り、前記第一の画素の左側/右側と、前記第三の画素の右側/左側に延び、前記出力回路は前記電荷に従って画素出力を生成するためのものであり、前記出力回路は第一のソースフォロワトランジスタを備えることと、
上面図において、前記第一のソースフォロワトランジスタの一部は、前記第一の画素と前記第三の画素との間の境界の一方の側に位置し、前記第一の画素の左側/右側の前記光検出器に少なくとも隣接し、および前記第一のソースフォロワトランジスタの他の一部は、前記第一の画素と前記第三の画素との間の境界の他方の側に位置し、前記第三の画素の右側/左側の前記光検出器に少なくとも隣接することを特徴とする、画像センサの半導体構造。 - 前記第一の画素および前記第三の画素は、両方とも緑色画素である、請求項1に記載の画像センサの半導体構造。
- 前記出力回路は、前記第三の画素に配置された第一の行選択トランジスタをさらに備え、前記第一の行選択トランジスタは、前記第三の画素の前記光検出器に隣接する、請求項2に記載の画像センサの半導体構造。
- 前記出力回路は、前記第一の画素に配置された第一のリセットトランジスタをさらに備え、前記第一のリセットトランジスタは、前記第一の画素の前記光検出器に隣接する、請求項3に記載の画像センサの半導体構造。
- 上面図において、前記第一の行選択トランジスタ、前記第一のソースフォロワトランジスタおよび前記第一のリセットトランジスタは、1列に配置されてトランジスタ列を形成する、請求項4に記載の画像センサの半導体構造。
- 前記出力回路は、前記第一の行選択トランジスタの一つのソース/ドレインを出力端子として用いて、前記画素出力を出力する、請求項3に記載の画像センサの半導体構造。
- 上面図において、前記第一のソースフォロワトランジスタは、前記第一のリセットトランジスタと前記第一の行選択トランジスタとの間に配置される、請求項4に記載の画像センサの半導体構造。
- 前記第一の行選択トランジスタおよび前記第一のリセットトランジスタは、前記第一のソースフォロワトランジスタに沿って対称的に配置される、請求項7に記載の画像センサの半導体構造。
- 各画素の前記4つのサブ画素のそれぞれがトランスミッションゲートを備え、各トランスミッションゲートが前記4つのサブ画素の前記光検出器のそれぞれが位置する領域に位置する、請求項2に記載の画像センサの半導体構造。
- 上面図において、前記第一の画素、前記第二の画素、前記第三の画素および前記第四の画素の前記トランスミッションゲートは、それらが位置する前記画素に均等に配置される、請求項9に記載の画像センサの半導体構造。
- 前記第二の画素および前記第四の画素は斜めに配置され、出力回路が前記第二の画素および前記第四の画素によって共有される、請求項1〜10のいずれか一項に記載の画像センサの半導体構造。
- 前記第二の画素および前記第四の画素によって共有される前記出力回路は、前記第二の画素および前記第四の画素との間に位置し、前記第二の画素の左側/右側と、前記第四の画素の右側/左側に延びる、請求項11に記載の画像センサの半導体構造。
- 前記第二の画素および前記第四の画素によって共有される前記出力回路は、第二のソースフォロワトランジスタを備え、前記第二のソースフォロワトランジスタは、前記第二の画素と前記第四の画素との境界を横切り、前記第二の画素の左側/右側の光センサに隣接するように少なくとも延び、第四の画素の右側/左側の光センサに隣接するように少なくとも延びる、請求項12に記載の画像センサの半導体構造。
- 前記第二の画素および前記第四の画素によって共有される前記出力回路は、第二の行選択トランジスタおよび第二のリセットトランジスタをさらに備え、前記第二の行選択トランジスタは、前記第四の画素に配置され、前記第二の行選択トランジスタは前記第四の画素の前記光センサに隣接し、前記第二のリセットトランジスタは前記第二の画素に配置され、前記第二のリセットトランジスタは前記第二の画素の前記光センサに隣接する、請求項13に記載の画像センサの半導体構造。
- 上面図において、前記第二の行選択トランジスタ、前記第二のソースフォロワトランジスタおよび前記第二のリセットトランジスタは、1列に配置されてトランジスタ列を形成する、請求項14に記載の画像センサの半導体構造。
- 上面図において、前記第二のソースフォロワトランジスタが、前記第二のリセットトランジスタと前記第二の行選択トランジスタとの間に配置される、請求項15に記載の画像センサの半導体構造。
- 各画素の前記4つのサブ画素が同じ色である、請求項16に記載の画像センサの半導体構造。
- 前記第二の画素は青色画素であり、前記第四の画素は赤色であり、前記第一の画素、前記第二の画素、前記第三の画素および前記第四の画素はベイヤー配列を形成する、請求項17に記載の画像センサの半導体構造。
- 請求項1〜18のいずれか一項に記載の画像センサの半導体構造を備えることを特徴とするチップ。
- 請求項1〜18のいずれか一項に記載の画像センサの半導体構造を備えることを特徴とする電子デバイス。
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US11527569B2 (en) * | 2020-05-18 | 2022-12-13 | Omnivision Technologies, Inc. | High dynamic range split pixel CMOS image sensor with low color crosstalk |
CN112367482B (zh) * | 2020-10-26 | 2022-08-09 | Oppo广东移动通信有限公司 | 一种感光器件及飞行时间测距系统 |
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JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
JP5644177B2 (ja) * | 2010-05-07 | 2014-12-24 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
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JP2015012303A (ja) * | 2013-06-26 | 2015-01-19 | ソニー株式会社 | 固体撮像装置および電子機器 |
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JP6334203B2 (ja) * | 2014-02-28 | 2018-05-30 | ソニー株式会社 | 固体撮像装置、および電子機器 |
JP2016042557A (ja) * | 2014-08-19 | 2016-03-31 | ソニー株式会社 | 固体撮像素子および電子機器 |
US9774801B2 (en) * | 2014-12-05 | 2017-09-26 | Qualcomm Incorporated | Solid state image sensor with enhanced charge capacity and dynamic range |
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EP3651200A2 (en) | 2020-05-13 |
WO2020011285A3 (zh) | 2020-08-13 |
KR102358599B1 (ko) | 2022-02-08 |
US20210098522A1 (en) | 2021-04-01 |
US11233086B2 (en) | 2022-01-25 |
EP3651200A4 (en) | 2020-11-18 |
CN110809823B (zh) | 2021-10-29 |
JP2021510922A (ja) | 2021-04-30 |
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