WO2020011285A3 - 图像传感器的半导体结构、芯片及电子装置 - Google Patents

图像传感器的半导体结构、芯片及电子装置 Download PDF

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WO2020011285A3
WO2020011285A3 PCT/CN2019/109426 CN2019109426W WO2020011285A3 WO 2020011285 A3 WO2020011285 A3 WO 2020011285A3 CN 2019109426 W CN2019109426 W CN 2019109426W WO 2020011285 A3 WO2020011285 A3 WO 2020011285A3
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pixel
image sensor
semiconductor structure
pixels
sub
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PCT/CN2019/109426
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English (en)
French (fr)
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WO2020011285A2 (zh
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陈经纬
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深圳市汇顶科技股份有限公司
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Priority to PCT/CN2019/109426 priority Critical patent/WO2020011285A2/zh
Priority to KR1020207002764A priority patent/KR102358599B1/ko
Priority to JP2020513731A priority patent/JP6891340B2/ja
Priority to CN201980002392.6A priority patent/CN110809823B/zh
Priority to EP19834065.5A priority patent/EP3651200B1/en
Publication of WO2020011285A2 publication Critical patent/WO2020011285A2/zh
Priority to US16/749,754 priority patent/US11233086B2/en
Publication of WO2020011285A3 publication Critical patent/WO2020011285A3/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

一种图像传感器（600、800、900）的半导体结构及相关芯片和电子装置。半导体结构包括半导体衬底（101）和设置于半导体衬底（101）的若干个像素组，每个像素组包括：位于同一行且相邻的第一像素及第二像素，位于另一行且相邻的第三像素及第四像素，第一像素及第三像素为对角错位设置，每个像素各自均包括四个子像素，每个像素里的四个子像素共用浮置扩散区且浮置扩散区被四个子像素的光敏传感器（502_1、504_1、506_1、508_1、502_2、504_2、506_2、508_2）包围，第一像素和第三像素的输出电路（518）共享，第一像素和第三像素共享的输出电路（518）位于第一像素及第三像素之间且延伸至第一像素的左侧/右侧和第三像素的右侧/左侧，可提高图像传感器（600、800、900）的图像质量并改善输出电路（518）的效能。
PCT/CN2019/109426 2019-09-30 2019-09-30 图像传感器的半导体结构、芯片及电子装置 WO2020011285A2 (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/CN2019/109426 WO2020011285A2 (zh) 2019-09-30 2019-09-30 图像传感器的半导体结构、芯片及电子装置
KR1020207002764A KR102358599B1 (ko) 2019-09-30 2019-09-30 이미지 센서의 반도체 구조, 칩 및 전자 장치
JP2020513731A JP6891340B2 (ja) 2019-09-30 2019-09-30 画像センサの半導体構造、チップおよび電子デバイス
CN201980002392.6A CN110809823B (zh) 2019-09-30 2019-09-30 图像传感器的半导体结构、芯片及电子装置
EP19834065.5A EP3651200B1 (en) 2019-09-30 2019-09-30 Semiconductor structure of image sensor, chip and electronic apparatus
US16/749,754 US11233086B2 (en) 2019-09-30 2020-01-22 Semiconductor structure of image sensor, chip and electronic apparatus

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PCT/CN2019/109426 WO2020011285A2 (zh) 2019-09-30 2019-09-30 图像传感器的半导体结构、芯片及电子装置

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WO2020011285A3 true WO2020011285A3 (zh) 2020-08-13

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US (1) US11233086B2 (zh)
EP (1) EP3651200B1 (zh)
JP (1) JP6891340B2 (zh)
KR (1) KR102358599B1 (zh)
CN (1) CN110809823B (zh)
WO (1) WO2020011285A2 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102358599B1 (ko) 2019-09-30 2022-02-08 선전 구딕스 테크놀로지 컴퍼니, 리미티드 이미지 센서의 반도체 구조, 칩 및 전자 장치
US11527569B2 (en) * 2020-05-18 2022-12-13 Omnivision Technologies, Inc. High dynamic range split pixel CMOS image sensor with low color crosstalk
CN112367482B (zh) * 2020-10-26 2022-08-09 Oppo广东移动通信有限公司 一种感光器件及飞行时间测距系统
KR20220103282A (ko) * 2021-01-15 2022-07-22 에스케이하이닉스 주식회사 이미지 센싱 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150002709A1 (en) * 2013-06-26 2015-01-01 Sony Corporation Solid state imaging device and electronic apparatus
CN104617116A (zh) * 2013-11-01 2015-05-13 全视科技有限公司 用于图像传感器的大-小像素方案及其使用
CN108174128A (zh) * 2015-03-31 2018-06-15 索尼公司 成像装置和电子设备
CN110099228A (zh) * 2018-01-29 2019-08-06 爱思开海力士有限公司 包括具有锯齿形排列的像素块的像素阵列的图像传感器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7916195B2 (en) * 2006-10-13 2011-03-29 Sony Corporation Solid-state imaging device, imaging apparatus and camera
KR20100080172A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5644177B2 (ja) * 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US9165959B2 (en) * 2013-02-25 2015-10-20 Omnivision Technologies, Inc. Image sensor with pixel units having mirrored transistor layout
JP6334203B2 (ja) * 2014-02-28 2018-05-30 ソニー株式会社 固体撮像装置、および電子機器
JP2016042557A (ja) * 2014-08-19 2016-03-31 ソニー株式会社 固体撮像素子および電子機器
US9774801B2 (en) * 2014-12-05 2017-09-26 Qualcomm Incorporated Solid state image sensor with enhanced charge capacity and dynamic range
KR102473154B1 (ko) * 2016-01-11 2022-12-02 에스케이하이닉스 주식회사 이미지 센서
WO2017126326A1 (ja) * 2016-01-20 2017-07-27 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP6789653B2 (ja) * 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
KR20180076054A (ko) * 2016-12-27 2018-07-05 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
KR102560775B1 (ko) * 2018-12-20 2023-07-28 삼성전자주식회사 이미지 센서
KR102358599B1 (ko) 2019-09-30 2022-02-08 선전 구딕스 테크놀로지 컴퍼니, 리미티드 이미지 센서의 반도체 구조, 칩 및 전자 장치
CN209729909U (zh) * 2019-09-30 2019-12-03 深圳市汇顶科技股份有限公司 图像传感器的半导体结构、芯片及电子装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150002709A1 (en) * 2013-06-26 2015-01-01 Sony Corporation Solid state imaging device and electronic apparatus
CN104617116A (zh) * 2013-11-01 2015-05-13 全视科技有限公司 用于图像传感器的大-小像素方案及其使用
CN108174128A (zh) * 2015-03-31 2018-06-15 索尼公司 成像装置和电子设备
CN110099228A (zh) * 2018-01-29 2019-08-06 爱思开海力士有限公司 包括具有锯齿形排列的像素块的像素阵列的图像传感器

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CN110809823A (zh) 2020-02-18
WO2020011285A2 (zh) 2020-01-16
JP2021510922A (ja) 2021-04-30
US11233086B2 (en) 2022-01-25
KR102358599B1 (ko) 2022-02-08
US20210098522A1 (en) 2021-04-01
EP3651200A4 (en) 2020-11-18
CN110809823B (zh) 2021-10-29
EP3651200B1 (en) 2022-07-13
JP6891340B2 (ja) 2021-06-18
KR20210039323A (ko) 2021-04-09
EP3651200A2 (en) 2020-05-13

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