CN103928420A - 引线框 - Google Patents

引线框 Download PDF

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CN103928420A
CN103928420A CN201410014608.XA CN201410014608A CN103928420A CN 103928420 A CN103928420 A CN 103928420A CN 201410014608 A CN201410014608 A CN 201410014608A CN 103928420 A CN103928420 A CN 103928420A
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lead frame
connecting rod
strength retention
lead
retention portion
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CN103928420B (zh
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石桥贵弘
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Mitsui High Tec Inc
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Abstract

一种引线框，该引线框包括布置成阵列的多个单元引线框。邻接的单元引线框的引线经由连接杆连接，纵向连接杆和横向连接杆在交叉部处交叉。引线框还包括：切割部，该切割部包括连接杆和引线的一部分，要沿着切割线切割该切割部；半蚀刻部，该半蚀刻部沿着切割部形成，并且在宽度上比切割部小；和强度保持部，该强度保持部形成在半蚀刻部中，并且从连接杆的交叉部延伸到至少与交叉部邻接的单元引线框的引线之中最靠近交叉部的端部引线。

Description

引线框
现有申请的交叉引用
本申请基于2013年1月11日提交的日本专利申请No.2013-003110并且要求其优先权，该专利申请的全部内容通过引用并入此处。
技术领域
本发明涉及一种引线框，该引线框用于制造半导体装置、尤其是使用由树脂共同密封多个半导体装置的MAP（模制阵列加工）模制成型技术制造的QFN（四侧无引脚扁平封装）半导体装置。
背景技术
通过使用由树脂共同密封多个半导体装置的MAP模制成型技术来制造QFN半导体装置。首先，制备邻接的单元引线框的多个引线部经由连接杆相互连接的引线框，作为MAP引线框。半导体装置接合在引线框的安装部上，并且将半导体装置和引线框的引线经由电线连接。然后，利用树脂密封引线框、半导体装置和电线。随后，通过切割去除连接杆（也称为堤坝杆），从而分成单独的单元引线框。
如果连接杆的厚度大，则当进行切割时，旋转刀具的负荷增加，从而加速了旋转刀具的磨伤。从而，切割能力恶化并且可能产生切削毛刺。
JP-A-2005-166695描述了用于在除了设备安装部的背侧和引线的背侧端子部之外的整个堤坝杆上从背侧进行半蚀刻的技术。以这种方式，当进行切割时，能够抑制旋转刀具的磨伤加速，并且防止产生切削毛刺。
发明内容
近年来，半导体装置由于引脚的增加而尺寸变大，并且引线框随着半导体装置的变薄而变薄。另一方面，为了增加从每片引线框得到的单元引线框的数量，引线框趋向于在面积上变大。因此，在如JP-A-2005-166695所述的整个连接杆变薄的结构中，产生了用作单元引线框的连接部的连接杆及其临近部不能承受外力从而变形的问题。连接杆布置成围绕单元引线框，并且包括纵向连接杆和横向连接杆相交叉的交叉点。单元引线框包括分割成四个引线组的多个引线。连接杆变形，尤其是交叉点与引线组之间变形。
JP-A-2005-166695描述了通过半蚀刻使引线框的堤坝杆变薄并且沿着切割方向在堤坝杆上形成比变薄部厚的部分的技术。在该技术中，在确保堤坝杆的强度的同时，当进行切割时，能够防止产生切削毛刺。然而，在该方法中，虽然确保了堤坝杆的强度，但是由于较厚部连续地形成到堤坝杆，所以当进行切割时，因为不能充分降低旋转刀具的负荷，所以产生了可能产生切削毛刺的问题。另外，因为蚀刻液难以渗透到设置在引线与比变薄部厚的部分之间的要蚀刻的部分内，所以蚀刻加工变难。
考虑到上述情况做出了本发明，并且本发明的目的是提供具有一种具有连接杆的引线框，所述连接杆的形状能够利用简单的蚀刻加工而形成，从而抑制在切割时产生切削毛刺，并且防止连接杆的交叉点周围变形。
本发明的第一方面提供了一种引线框，包括：多个单元引线框，该多个单元引线框布置成阵列；多个引线，该多个引线沿着所述多个单元引线框的每个单元引线框的侧边对齐，该引线的后表面露出；连接杆，所述多个单元引线框的邻接的单元引线框的引线经由该连接杆连接，该连接杆包括：纵向连接杆、横向连接杆和交叉部，所述纵向连接杆和所述横向连接杆在该交叉部处交叉；切割部，该切割部包括所述连接杆和所述引线的一部分，要沿着切割线切割该切割部；半蚀刻部，该半蚀刻部沿着所述切割部形成，并且在宽度上比所述切割部小；以及强度保持部，该强度保持部形成在所述半蚀刻部中并且从所述连接杆的所述交叉部至少延伸到与所述交叉部邻接的所述单元引线框的所述引线之中最靠近所述交叉部的端部引线。
根据本发明的第二方面，所述引线框可以构造成使得所述强度保持部包括沿着所述连接杆的切割方向形成的第一强度保持部和沿着所述引线形成的第二强度保持部，并且所述第二强度保持部形成在经由所述连接杆相互连接的一对引线之间。
根据本发明的第三方面，所述引线框可以构造成使得所述第一强度保持部连续地形成道所述第二强度保持部。
根据本发明的第四方面，所述引线框可以构造成使得所述第一强度保持部具有所述连接杆的宽度的四分之一到一半的宽度。
根据本发明的第五方面，所述引线框可以构造成使得所述第二强度保持部具有所述连接杆的宽度的四分之一到一半的宽度。
根据本发明的第六方面，所述引线框可以构造成使得所述第一强度保持部一侧处的所述半蚀刻部的端部与所述引线一侧处的所述半蚀刻部的端部之间的距离是所述连接杆的宽度的0.5至0.75倍。
根据如上所述的引线框，要利用旋转刀具切割的切割部的金属的厚度变薄。由于当进行切割时施加到旋转刀具的负荷减小，所以抑制了切削毛刺的产生并且延长了旋转刀具的寿命。此外，由于强度保持部形成在半蚀刻部中并且从连接杆的交叉部延伸到与交叉部邻接的单元引线框的引线之中最靠近交叉部的端部引线，所以能够提高应力最可能集中在其上的部分的强度。从而，不需要不必要地增加切割部中的金属的厚度，并且防止引线框变形。另外，由于引线框的强度增加，所以适于使半导体装置的尺寸增加和使引线框变薄。另外，由于强度保持部包括第一强度保持部和第二强度保持部，所以连接杆能够承受从多方向施加的应力，而且，对于第一强度保持部与引线的半蚀刻部的横向端部的之间的蚀刻加工变得简单。
附图说明
在附图中：
图1是根据本发明的第一实施例的引线框的平面图；
图2A是示出根据本发明的第一实施例的引线框的连接杆的交叉部周围的背侧的平面图；
图2B是沿着图2A中的IIB-IIB线截取的截面图；
图3示出根据本发明的第一实施例的引线框的切割加工；
图4A是示出根据本发明的第二实施例的引线框的连接杆的交叉点周围的背侧的平面图；
图4B是沿着图4A中的IVB-IVB线截取的截面图；并且
图4C是沿着图4A中的IVC-IVC线截取的截面图。
具体实施方式
将参考附图具体描述根据本发明的示例性实施例的引线框。
图1是示出根据本发明的第一实施例的引线框10的示意性平面图。引线框10包括布置成阵列的多个单元引线框。每个单元引线框都包括安装部15，半导体装置16安装在该安装部15上。单元引线框包括多个引线14，该多个引线14沿着单元引线框的每侧分成对齐的四个引线组14a。邻接的单元引线框的引线14经由连接杆11连接。连接杆11包括纵向连接杆和横向连接杆。纵向连接杆和横向连接杆在交叉部11a处相互交叉。如图3所示，虚线指示在利用树脂18密封引线框10的一个表面之后要利用旋转刀具切割的切割线。切割线之间的部分指示要在切割加工中切割的切割部。
图2A是引线框10的背侧处的切割部的宽度A内的连接杆11的交叉部周围的放大平面图，如图1中的参考标号IIA所指示地。图2B是连接杆11周围的放大截面图，以示出沿着图2A中的IIB-IIB线截取的截面图。在图2A中，为了方便识别，半蚀刻部12影线化。
图3是使用根据本发明的第一实施例的引线框10的半导体装置的截面图。
在引线框10中，沿着切割部形成半蚀刻部12。另外，强度保持部13形成在半蚀刻部12中并且从连接杆11的交叉部11a延伸到与交叉部11a邻接的引线组14a之中的最靠近交叉部11a的端部引线14b。半蚀刻部12的宽度E小于切割部的宽度A。根据半蚀刻部12的存在，由于当进行切割时施加到旋转刀具的负荷较小，所以抑制了切削毛刺的产生并且延长了旋转刀具的寿命。如果半蚀刻部12的宽度E大于切割部的宽度A，则在切割时不能充分切割半蚀刻部12。从而，引线的露出面积减小并且可焊性恶化。如图3所示，根据本发明的第一实施例，由于半蚀刻部12的宽度E形成为小于切割部的宽度A，所以在切割时全部切割半蚀刻部12，并且引线14在半导体装置的安装面和其侧表面上露出。因此，当进行焊接加工时，焊料涂覆到引线14的侧表面，并且可焊性提高。
由于强度保持部13形成在半蚀刻部12中并且从连接杆11的交叉部延伸到与交叉部11a邻接的引线组14a之中的最靠近交叉部11a的端部引线14b，所以能够在应力最可能集中的部分提高强度。从而，不需要不必要地增加切割部中的金属的厚度，并且防止引线框10变形。强度保持部13包括沿着连接杆11的切割方向形成的第一强度保持部13a。
这里，连接杆11的宽度限定为a，第一强度保持部13a的宽度限定为b，第一强度保持部13a一侧处的半蚀刻部12的端部与引线14a一侧处的半蚀刻部12的端部之间的距离限定为d，该实施例示出了a=0.1mm、b=0.05mm并且d=0.075mm的实例。b是a的0.25至0.5倍，并且d是a的0.50至0.75倍是可适用的。
如果参数b落到下限值以下或参数d超过上限值，即，如果强度保持部13变薄或半蚀刻部12加宽，则强度保持部13由于切割时的变化而可能部分掉落，并且因此不能确保引线框10的强度。另外，如果参数b超过上限值或参数d落到下限值以下，即，如果强度保持部13变厚或半蚀刻部12收窄，则变得不能防止产生切削毛刺。
如图3所示，半导体装置16安装在引线框10的每个单元引线框的安装部15上。引线14和半导体装置16经由电线17连接。然后，利用树脂18密封包括半导体装置16和电线17的引线框10的一个表面。利用旋转刀具沿着切割线切割切割部，从而将引线框10分成单独的单元引线框。
随后，将描述根据本发明的第二实施例的引线框，尤其是与根据第一实施例的引线框的不同之处。图4A是引线框10的背侧处的切割部的宽度A内的连接杆21的交叉部21a周围的放大平面图。图4B是连接杆21周围的放大截面图，以示出沿着图4A中的VIB-VIB线截取的截面。图4C是连接杆21的放大截面图，以示出沿着图4A的VIC-VIC线截取的截面。
强度保持部23形成在半蚀刻部22中并且从连接杆21的交叉部21a延伸到与交叉部21a邻接的引线组24a之中的最靠近交叉部21a的端部引线24b。强度保持部23包括沿着连接杆21的切割方向形成的第一强度保持部23a和沿着引线24b形成的第二强度保持部23b。第一强度保持部23a连续地形成到第二强度保持部23b。如图4A所示，第二强度保持部23b形成在经由连接杆21邻接连接的引线组24之中的最靠近交叉部21a的一对最近引线24b之间。由于形成了第二强度保持部23b，所以连接杆能承受从多方向施加的应力。另外，由于单个第二强度保持部23b形成在一对引线24b之间，所以不需要蚀刻第一强度保持部23a与引线24b之间蚀刻液难以渗透到当中的部分，并且仅在蚀刻液容易渗透到其内的部分上进行半蚀刻加工。从而，蚀刻加工变得简单。
这里，连接杆21的宽度限定为a，第一强度保持部23的宽度限定为b，第二强度保持部23b的宽度限定为c，第一强度保持部23a一侧处的半蚀刻部22的端部与引线24a一侧处的半蚀刻部22的端部之间的距离限定为d，该实施例示出了a=0.1mm、b=0.05mm、c=0.05mm并且d=0.075mm的实例。如果b和c是a的0.25至0.5倍，并且d是a的0.50至0.75倍是可适用的。
如果参数b或c落到下限值以下或参数d超过上限值，即，如果强度保持部23变薄或半蚀刻部22加宽，则强度保持部23由于切割时的变化而可能部分掉落，并且因此不能确保引线框10的强度。另外，如果参数b或c超过上限值或参数d落到下限值以下，即，如果强度保持部23变厚或半蚀刻部22收窄，则变得不能防止产生切削毛刺。
已经参考特定的示例性实施例具体描述了本发明。然而，本发明不限于在这些实施例中描述的构造，而是可以包括其它实施例，可以认为各种变化和修改在本发明的范围内。

Claims (6)

1.一种引线框，包括：
多个单元引线框，该多个单元引线框布置成阵列；
多个引线，该多个引线沿着所述多个单元引线框的每个单元引线框的侧边对齐，该引线的背表面露出；
连接杆，所述多个单元引线框之中邻接的单元引线框的引线经由该连接杆连接，该连接杆包括：纵向连接杆、横向连接杆和交叉部，所述纵向连接杆和所述横向连接杆在该交叉部处交叉；
切割部，该切割部包括所述连接杆和所述引线的一部分，要沿着切割线切割该切割部；
半蚀刻部，该半蚀刻部沿着所述切割部形成，并且在宽度上比所述切割部小；以及
强度保持部，该强度保持部形成在所述半蚀刻部中并且从所述连接杆的所述交叉部至少延伸到与所述交叉部邻接的所述单元引线框的所述引线之中最靠近所述交叉部的端部引线。
2.根据权利要求1所述的引线框，其中
所述强度保持部包括沿着所述连接杆的切割方向形成的第一强度保持部和沿着所述引线形成的第二强度保持部，并且所述第二强度保持部形成在经由所述连接杆相互连接的一对引线之间。
3.根据权利要求2所述的引线框，其中
所述第一强度保持部连续地形成到所述第二强度保持部。
4.根据权利要求2所述的引线框，其中，
所述第一强度保持部具有所述连接杆的宽度的四分之一到一半的宽度。
5.根据权利要求2所述的引线框，其中
所述第二强度保持部具有所述连接杆的宽度的四分之一到一半的宽度。
6.根据权利要求2所述的引线框，其中
所述第一强度保持部一侧处的所述半蚀刻部的端部与所述引线一侧处的所述半蚀刻部的端部之间的距离是所述连接杆的宽度的0.5至0.75倍。
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