CN103567169B - 基板清洗装置、基板清洗系统以及基板清洗方法 - Google Patents

基板清洗装置、基板清洗系统以及基板清洗方法 Download PDF

Info

Publication number
CN103567169B
CN103567169B CN201310334657.7A CN201310334657A CN103567169B CN 103567169 B CN103567169 B CN 103567169B CN 201310334657 A CN201310334657 A CN 201310334657A CN 103567169 B CN103567169 B CN 103567169B
Authority
CN
China
Prior art keywords
mentioned
liquid
wafer
substrate
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310334657.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103567169A (zh
Inventor
金子都
折居武彦
志村悟
山下刚秀
菅野至
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN201610862566.4A priority Critical patent/CN106847729B/zh
Publication of CN103567169A publication Critical patent/CN103567169A/zh
Application granted granted Critical
Publication of CN103567169B publication Critical patent/CN103567169B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201310334657.7A 2012-08-07 2013-08-02 基板清洗装置、基板清洗系统以及基板清洗方法 Active CN103567169B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610862566.4A CN106847729B (zh) 2012-08-07 2013-08-02 基板清洗装置以及基板清洗方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2012-175417 2012-08-07
JP2012175417 2012-08-07
JP2012-229166 2012-10-16
JP2012229166 2012-10-16
JP2013095996A JP5586734B2 (ja) 2012-08-07 2013-04-30 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体
JP2013-095996 2013-04-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610862566.4A Division CN106847729B (zh) 2012-08-07 2013-08-02 基板清洗装置以及基板清洗方法

Publications (2)

Publication Number Publication Date
CN103567169A CN103567169A (zh) 2014-02-12
CN103567169B true CN103567169B (zh) 2016-12-28

Family

ID=50040374

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310334657.7A Active CN103567169B (zh) 2012-08-07 2013-08-02 基板清洗装置、基板清洗系统以及基板清洗方法
CN201610862566.4A Active CN106847729B (zh) 2012-08-07 2013-08-02 基板清洗装置以及基板清洗方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610862566.4A Active CN106847729B (zh) 2012-08-07 2013-08-02 基板清洗装置以及基板清洗方法

Country Status (5)

Country Link
US (2) US20140041685A1 (enExample)
JP (1) JP5586734B2 (enExample)
KR (3) KR101874526B1 (enExample)
CN (2) CN103567169B (enExample)
TW (2) TWI553699B (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
JP5977727B2 (ja) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
JP6308910B2 (ja) 2013-11-13 2018-04-11 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
JP6304592B2 (ja) * 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6600470B2 (ja) 2014-04-01 2019-10-30 株式会社荏原製作所 洗浄装置及び洗浄方法
JP6371253B2 (ja) 2014-07-31 2018-08-08 東京エレクトロン株式会社 基板洗浄システム、基板洗浄方法および記憶媒体
JP6548790B2 (ja) * 2014-07-31 2019-07-24 東京エレクトロン株式会社 基板洗浄システム、基板洗浄方法および記憶媒体
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物
KR101919122B1 (ko) * 2014-08-12 2018-11-15 주식회사 제우스 공정 분리형 기판 처리장치 및 처리방법
JP6425517B2 (ja) * 2014-11-28 2018-11-21 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
CN105914167B (zh) 2015-02-25 2018-09-04 株式会社思可林集团 基板处理装置
WO2016194285A1 (ja) 2015-06-03 2016-12-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6618334B2 (ja) * 2015-06-03 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6373803B2 (ja) * 2015-06-23 2018-08-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR20180059442A (ko) 2015-09-30 2018-06-04 제이에스알 가부시끼가이샤 반도체 기판 세정용 막 형성 조성물 및 반도체 기판의 세정 방법
JP6712482B2 (ja) * 2016-03-31 2020-06-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US10734255B2 (en) 2016-05-25 2020-08-04 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system and memory medium
WO2018128093A1 (ja) 2017-01-05 2018-07-12 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
JP6951229B2 (ja) 2017-01-05 2021-10-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
JP7140110B2 (ja) * 2017-04-13 2022-09-21 Jsr株式会社 半導体基板洗浄用組成物
NL2020527A (en) * 2017-06-01 2018-12-04 Asml Netherlands Bv Particle Removal Apparatus and Associated System
JPWO2019009054A1 (ja) * 2017-07-03 2020-04-16 東京エレクトロン株式会社 基板処理システム、基板洗浄方法および記憶媒体
KR102208754B1 (ko) * 2017-07-10 2021-01-28 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6914138B2 (ja) * 2017-07-26 2021-08-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置
JP6993806B2 (ja) * 2017-07-31 2022-01-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR20190015666A (ko) * 2017-08-04 2019-02-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN107564841A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种晶圆清洗缺陷的改善方法和装置
TWI755609B (zh) 2017-09-22 2022-02-21 日商斯庫林集團股份有限公司 基板洗淨方法及基板洗淨裝置
JP7008489B2 (ja) 2017-12-05 2022-01-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7013221B2 (ja) 2017-12-11 2022-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN110032044B (zh) * 2018-01-12 2021-03-19 上海微电子装备（集团）股份有限公司 一种基底交接机构、光刻机及基底交接方法
KR102046973B1 (ko) * 2018-04-10 2019-12-02 세메스 주식회사 기판의 세정방법 및 세정장치
JP7227758B2 (ja) 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7227757B2 (ja) 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
EP3576134B1 (en) 2018-05-31 2023-06-28 SCREEN Holdings Co., Ltd. Substrate processing method
EP3576133B1 (en) * 2018-05-31 2023-11-22 SCREEN Holdings Co., Ltd. Substrate processing method
WO2020008965A1 (ja) * 2018-07-04 2020-01-09 Jsr株式会社 基板処理膜形成用組成物及び基板の処理方法
CN108649008A (zh) * 2018-07-05 2018-10-12 睿力集成电路有限公司 用于离子注入后晶圆清洗的单片式清洗装置及方法
JP7116676B2 (ja) 2018-12-14 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7203593B2 (ja) * 2018-12-25 2023-01-13 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102680866B1 (ko) 2019-07-16 2024-07-04 삼성전자주식회사 기판 세정 장치 및 이를 이용한 기판 세정 방법
KR102240924B1 (ko) 2019-07-18 2021-04-14 세메스 주식회사 기판 처리 장치 및 회전 어셈블리
JP7232737B2 (ja) * 2019-08-07 2023-03-03 東京エレクトロン株式会社 基板処理装置
US12057328B2 (en) 2019-08-08 2024-08-06 Kyocera Corporation Clamping jig and cleaning device
TWI878399B (zh) * 2019-12-17 2025-04-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
JP7573466B2 (ja) * 2021-03-17 2024-10-25 東京エレクトロン株式会社 ガス処理装置
US12046464B2 (en) 2021-04-15 2024-07-23 Samsung Electronics Co., Ltd. Substrate cleaning composition, method for cleaning substrate using the same, and method for fabricating semiconductor device using the same
JP7650719B2 (ja) * 2021-05-17 2025-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7730272B2 (ja) * 2021-07-05 2025-08-27 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
JP7504850B2 (ja) * 2021-09-28 2024-06-24 芝浦メカトロニクス株式会社 基板乾燥装置、基板処理装置及び基板乾燥方法
KR102712483B1 (ko) * 2021-12-28 2024-10-04 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11925963B2 (en) 2022-05-27 2024-03-12 Semes Co., Ltd. Method for treating a substrate
KR102721407B1 (ko) 2022-11-30 2024-10-25 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102721406B1 (ko) 2022-11-30 2024-10-25 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101253604A (zh) * 2005-06-23 2008-08-27 东京毅力科创株式会社 衬底处理方法和衬底处理设备
JP2010074109A (ja) * 2008-09-22 2010-04-02 Kurita Water Ind Ltd 洗浄システム
KR101061946B1 (ko) * 2006-04-13 2011-09-05 도쿄엘렉트론가부시키가이샤 기판 세정 방법, 기판 세정 장치 및 프로그램 기록 매체

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679423A (en) * 1985-12-16 1987-07-14 Carrier Corporation Method and apparatus for measuring the pore size of enhanced tubes
JP2696244B2 (ja) * 1989-03-14 1998-01-14 鐘淵化学工業株式会社 樹脂フィルムの連続製造方法及び装置及び設備
JPH08126873A (ja) * 1994-10-28 1996-05-21 Nec Corp 電子部品等の洗浄方法及び装置
JP3504023B2 (ja) 1995-05-26 2004-03-08 株式会社ルネサステクノロジ 洗浄装置および洗浄方法
JP3395696B2 (ja) 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP3664605B2 (ja) * 1999-04-30 2005-06-29 信越半導体株式会社 ウェーハの研磨方法、洗浄方法及び処理方法
JP3511514B2 (ja) 2001-05-31 2004-03-29 エム・エフエスアイ株式会社 基板浄化処理装置、ディスペンサー、基板保持機構、基板の浄化処理用チャンバー、及びこれらを用いた基板の浄化処理方法
TWI246124B (en) * 2001-11-27 2005-12-21 Tokyo Electron Ltd Liquid processing apparatus and method
US6955485B2 (en) * 2002-03-01 2005-10-18 Tokyo Electron Limited Developing method and developing unit
US7458762B2 (en) 2003-02-13 2008-12-02 Samsung Electronics Co., Ltd. Apparatus and method for positioning semiconductor substrate
KR20050070681A (ko) 2003-12-30 2005-07-07 동부아남반도체 주식회사 기판 크리닝 장치
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
JP2007258462A (ja) 2006-03-23 2007-10-04 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2008060368A (ja) * 2006-08-31 2008-03-13 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
US20080153040A1 (en) * 2006-12-21 2008-06-26 Elpida Memory, Inc. Method for processing semiconductor wafer
KR20080088084A (ko) * 2007-03-28 2008-10-02 세메스 주식회사 기판 처리 장치 및 그의 처리 방법
US8011377B2 (en) * 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
JP2009135169A (ja) 2007-11-29 2009-06-18 Tokyo Electron Ltd 基板処理システムおよび基板処理方法
JP5117365B2 (ja) * 2008-02-15 2013-01-16 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP5385628B2 (ja) * 2009-02-13 2014-01-08 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
US8619231B2 (en) * 2009-05-21 2013-12-31 Nikon Corporation Cleaning method, exposure method, and device manufacturing method
JP2012033880A (ja) * 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
JP5817139B2 (ja) * 2011-02-18 2015-11-18 富士通株式会社 化合物半導体装置の製造方法及び洗浄剤
JP2013016599A (ja) 2011-07-01 2013-01-24 Toshiba Corp 半導体装置の製造方法
JP6090837B2 (ja) 2012-06-13 2017-03-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101253604A (zh) * 2005-06-23 2008-08-27 东京毅力科创株式会社 衬底处理方法和衬底处理设备
KR101061946B1 (ko) * 2006-04-13 2011-09-05 도쿄엘렉트론가부시키가이샤 기판 세정 방법, 기판 세정 장치 및 프로그램 기록 매체
JP2010074109A (ja) * 2008-09-22 2010-04-02 Kurita Water Ind Ltd 洗浄システム

Also Published As

Publication number Publication date
JP2014099583A (ja) 2014-05-29
KR102049431B1 (ko) 2019-11-28
KR20140019741A (ko) 2014-02-17
CN106847729B (zh) 2019-11-22
CN103567169A (zh) 2014-02-12
US20140041685A1 (en) 2014-02-13
TWI553699B (zh) 2016-10-11
JP5586734B2 (ja) 2014-09-10
KR20180062440A (ko) 2018-06-08
KR20190042524A (ko) 2019-04-24
KR101971098B1 (ko) 2019-04-22
CN106847729A (zh) 2017-06-13
TW201419374A (zh) 2014-05-16
TW201642308A (zh) 2016-12-01
TWI600056B (zh) 2017-09-21
KR101874526B1 (ko) 2018-07-04
US10998183B2 (en) 2021-05-04
US20160163534A1 (en) 2016-06-09

Similar Documents

Publication Publication Date Title
CN103567169B (zh) 基板清洗装置、基板清洗系统以及基板清洗方法
JP6765488B2 (ja) 基板洗浄装置、基板洗浄方法および記憶媒体
KR101932160B1 (ko) 기판 세정 시스템, 기판 세정 방법 및 기억 매체
KR101822950B1 (ko) 기판 세정 방법 및 기판 세정 시스템
JP6356295B2 (ja) 基板洗浄装置、基板洗浄方法および記憶媒体
CN110060924A (zh) 基板清洗方法、基板清洗系统和存储介质
JP2015095583A (ja) 基板洗浄方法、基板洗浄システムおよび記憶媒体
JP6279037B2 (ja) 基板洗浄方法および基板洗浄システム

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant