CN103540908A - 沉积二氧化硅薄膜的方法 - Google Patents

沉积二氧化硅薄膜的方法 Download PDF

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Publication number
CN103540908A
CN103540908A CN201310150780.3A CN201310150780A CN103540908A CN 103540908 A CN103540908 A CN 103540908A CN 201310150780 A CN201310150780 A CN 201310150780A CN 103540908 A CN103540908 A CN 103540908A
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silicon dioxide
deposition
deposited
plasma
temperature
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Chinese (zh)
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凯瑟琳·克鲁克
安德鲁·普赖斯
马克·卡拉瑟斯
丹尼尔·阿查德
斯蒂芬·伯吉斯
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SPTS Technologies Ltd
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SPTS Technologies Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CN201310150780.3A 2012-04-26 2013-04-26 沉积二氧化硅薄膜的方法 Pending CN103540908A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261638598P 2012-04-26 2012-04-26
GBGB1207448.0A GB201207448D0 (en) 2012-04-26 2012-04-26 Method of depositing silicon dioxide films
US61/638,598 2012-04-26
GB1207448.0 2012-04-26

Publications (1)

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CN103540908A true CN103540908A (zh) 2014-01-29

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US (1) US9165762B2 (enExample)
EP (1) EP2657363B1 (enExample)
JP (1) JP6290544B2 (enExample)
KR (1) KR102221064B1 (enExample)
CN (1) CN103540908A (enExample)
GB (1) GB201207448D0 (enExample)
TW (1) TWI581334B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105063576A (zh) * 2015-08-24 2015-11-18 沈阳拓荆科技有限公司 一种采用teos源的低温镀膜方法
CN109643654A (zh) * 2016-09-09 2019-04-16 德克萨斯仪器股份有限公司 高性能超βNPN(SBNPN)
CN112342531A (zh) * 2020-10-19 2021-02-09 绍兴同芯成集成电路有限公司 一种利用低频射频电浆制备ild绝缘层的晶圆制造工艺
CN113621941A (zh) * 2020-05-08 2021-11-09 韩松化学株式会社 硅前体和使用其制造含硅薄膜的方法
CN114000123A (zh) * 2021-11-02 2022-02-01 浙江光特科技有限公司 一种制备SiO2薄膜的方法、芯片及装置
CN115020221A (zh) * 2022-06-10 2022-09-06 广东越海集成技术有限公司 一种二氧化硅及其低温制备方法
CN116479405A (zh) * 2023-06-08 2023-07-25 上海陛通半导体能源科技股份有限公司 一种12英寸超高均匀性非晶氧化硅薄膜的化学气相沉积方法
CN116804270A (zh) * 2023-08-29 2023-09-26 上海陛通半导体能源科技股份有限公司 二氧化硅薄膜的低温沉积方法及器件制备方法
CN117888080A (zh) * 2024-03-14 2024-04-16 之江实验室 二氧化硅薄膜及其制备方法
CN118207516A (zh) * 2022-12-16 2024-06-18 圆益Ips股份有限公司 氧化硅薄膜形成方法

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WO2015146807A1 (ja) * 2014-03-26 2015-10-01 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法
JP6183965B2 (ja) * 2014-03-27 2017-08-23 Ｓｐｐテクノロジーズ株式会社 シリコン酸化膜及びその製造方法、並びにシリコン酸化膜の製造装置
US9460915B2 (en) * 2014-09-12 2016-10-04 Lam Research Corporation Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
GB201522552D0 (en) * 2015-12-21 2016-02-03 Spts Technologies Ltd Method of improving adhesion
US10358717B2 (en) * 2017-04-21 2019-07-23 Lam Research Corporation Method for depositing high deposition rate, thick tetraethyl orthosilicate film with low compressive stress, high film stability and low shrinkage
CN113667964B (zh) * 2021-08-31 2023-01-20 陛通半导体设备(苏州)有限公司 Teos膜的制作方法
GB202213794D0 (en) 2022-09-21 2022-11-02 Spts Technologies Ltd Deposition of thick layers of silicon dioxide

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US5593741A (en) * 1992-11-30 1997-01-14 Nec Corporation Method and apparatus for forming silicon oxide film by chemical vapor deposition
US6028014A (en) * 1997-11-10 2000-02-22 Lsi Logic Corporation Plasma-enhanced oxide process optimization and material and apparatus therefor
US20060205202A1 (en) * 2005-03-14 2006-09-14 Hynix Semiconductor Inc. Method for forming interlayer dielectric film in semiconductor device
CN102108497A (zh) * 2009-12-24 2011-06-29 Spp处理技术系统英国有限公司 沉积SiO2膜的方法

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JP3184177B2 (ja) * 1999-03-26 2001-07-09 キヤノン販売株式会社 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置
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TWI448576B (zh) * 2010-11-17 2014-08-11 Nanmat Technology Co Ltd 低介電材料及其薄膜之製備方法

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US5593741A (en) * 1992-11-30 1997-01-14 Nec Corporation Method and apparatus for forming silicon oxide film by chemical vapor deposition
US5382550A (en) * 1993-08-05 1995-01-17 Micron Semiconductor, Inc. Method of depositing SiO2 on a semiconductor substrate
US6028014A (en) * 1997-11-10 2000-02-22 Lsi Logic Corporation Plasma-enhanced oxide process optimization and material and apparatus therefor
US20060205202A1 (en) * 2005-03-14 2006-09-14 Hynix Semiconductor Inc. Method for forming interlayer dielectric film in semiconductor device
CN102108497A (zh) * 2009-12-24 2011-06-29 Spp处理技术系统英国有限公司 沉积SiO2膜的方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105063576A (zh) * 2015-08-24 2015-11-18 沈阳拓荆科技有限公司 一种采用teos源的低温镀膜方法
CN109643654A (zh) * 2016-09-09 2019-04-16 德克萨斯仪器股份有限公司 高性能超βNPN(SBNPN)
CN113621941A (zh) * 2020-05-08 2021-11-09 韩松化学株式会社 硅前体和使用其制造含硅薄膜的方法
CN113621941B (zh) * 2020-05-08 2023-12-01 韩松化学株式会社 硅前体和使用其制造含硅薄膜的方法
CN112342531A (zh) * 2020-10-19 2021-02-09 绍兴同芯成集成电路有限公司 一种利用低频射频电浆制备ild绝缘层的晶圆制造工艺
CN114000123A (zh) * 2021-11-02 2022-02-01 浙江光特科技有限公司 一种制备SiO2薄膜的方法、芯片及装置
CN115020221A (zh) * 2022-06-10 2022-09-06 广东越海集成技术有限公司 一种二氧化硅及其低温制备方法
CN118207516A (zh) * 2022-12-16 2024-06-18 圆益Ips股份有限公司 氧化硅薄膜形成方法
CN116479405A (zh) * 2023-06-08 2023-07-25 上海陛通半导体能源科技股份有限公司 一种12英寸超高均匀性非晶氧化硅薄膜的化学气相沉积方法
CN116804270A (zh) * 2023-08-29 2023-09-26 上海陛通半导体能源科技股份有限公司 二氧化硅薄膜的低温沉积方法及器件制备方法
CN116804270B (zh) * 2023-08-29 2023-11-10 上海陛通半导体能源科技股份有限公司 二氧化硅薄膜的低温沉积方法及器件制备方法
CN117888080A (zh) * 2024-03-14 2024-04-16 之江实验室 二氧化硅薄膜及其制备方法

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US20130288486A1 (en) 2013-10-31
US9165762B2 (en) 2015-10-20
JP6290544B2 (ja) 2018-03-07
TWI581334B (zh) 2017-05-01
EP2657363B1 (en) 2019-02-20
JP2013229608A (ja) 2013-11-07
TW201403714A (zh) 2014-01-16
EP2657363A1 (en) 2013-10-30
GB201207448D0 (en) 2012-06-13
KR102221064B1 (ko) 2021-02-25
KR20130121061A (ko) 2013-11-05

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