CN103380480B - 用于器件集成的硅的低温选择性外延生长 - Google Patents
用于器件集成的硅的低温选择性外延生长 Download PDFInfo
- Publication number
- CN103380480B CN103380480B CN201280009465.2A CN201280009465A CN103380480B CN 103380480 B CN103380480 B CN 103380480B CN 201280009465 A CN201280009465 A CN 201280009465A CN 103380480 B CN103380480 B CN 103380480B
- Authority
- CN
- China
- Prior art keywords
- silicon
- gas
- epitaxial
- backing material
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02584—Delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
一种外延方法包括提供(402)衬底材料的暴露的晶体区域。在低温工艺中将硅外延沉积(404)在所述衬底材料上,其中沉积温度低于500摄氏度。用稀释气体稀释(408)源气体,其中稀释气体与源气体的气体比小于1000。
Description
技术领域
本发明涉及半导体加工,更具体地涉及低温外延生长工艺。
背景技术
重掺杂的硅的选择性外延生长(SEG)适合应用于提升的(raised)源极/漏极(S/D)区中以减小与浅掺杂的S/D区相关联的寄生串联电阻。然而,用于硅的SEG的常规方法需要高温处理。典型的处理温度大于600°C。
高温要求限制了能够利用用于Si的SEG的常规方法的工艺和应用。此外,用于硅的外延生长的常规高温沉积(超过600摄氏度)缺乏Si在预定区域上的选择性生长,所述预定区域例如是c-Si的暴露区域。
发明内容
一种外延方法包括提供衬底材料的暴露的晶体区域。在低温工艺中在所述衬底材料上外延沉积硅,其中沉积温度低于500摄氏度。用稀释气体稀释源气体,其中稀释气体与源气体的气体比小于1000。
另一种外延方法包括:提供晶体衬底材料;在所述衬底材料上生长绝缘体;对所述绝缘体开口以形成所述衬底材料的暴露区域;在低温工艺中在所述衬底材料的所述暴露区域上沉积硅以在所述暴露区域上形成外延硅并且在非暴露区域上形成非外延硅,其中沉积温度低于500摄氏度;以及使用等离子体蚀刻所述非外延硅,以在所述暴露区域之上进一步外延沉积硅。
另一种外延方法包括:提供衬底材料的暴露的晶体区域,以及通过用H2稀释硅烷,在低温工艺中在所述衬底材料上选择性地外延沉积硅,其中沉积温度低于500摄氏度,稀释气体与源气体的气体比小于1000。
通过下文中对其示例性实施例的详细描述,这些和其它特征及优点将变得显而易见,所述详细描述要结合附图阅读。
附图说明
本公开将参考以下附图在优选实施例的以下描述中提供细节,在附图中:
图1是根据一个实施例使用选择性外延生长形成的具有提升的源极/漏极区的示例性半导体器件的横截面视图;
图2A是示出了根据一个实施例的薄层电阻(sheetresistance)与[PH3]/[SiH4]的气体比之间的关系的图,示出了三个示例性样品;
图2B是示出图2A的三个样品的原子浓度与深度之间的关系的图,并且该图还示出了根据一个实例的P浓度和PH3流量之间的线性关系;
图3A是根据一个实施例具有在低温工艺中与非外延层一起形成的选择性外延层的器件的横截面视图;
图3B是根据一个实施例的、使非外延层被蚀刻以进一步形成选择性外延层的图3A中的器件的横截面视图;
图3C是根据一个实施例的、在非外延层已经被完全蚀刻之后的图3B中的器件的横截面视图;
图4是示出根据本发明原理用于选择性外延生长的示例性方法的框图/流程图;以及
图5是示出根据本发明原理使用蚀刻进行选择性外延生长的另一示例性方法的框图/流程图。
具体实施方式
根据本发明原理,公开了在低温下进行重掺杂硅的选择性外延生长的方法。在特别有用的实施例中,使用等离子体增强化学气相沉积(PECVD)实现了低至150°C的生长温度。通过增加和优化[H2]/[SiH4]的气体比,获得该外延生长。在另一个实施例中,通过例如使用PH3气体来包含磷,生长N+掺杂的硅。
例如大于1×1020cm-3的高度掺杂剂激活可以在150°C下获得。通过在H2等离子体中蚀刻在晶体-Si(c-Si)未暴露的区域上的沉积的硅,提供选择性生长。因此,本实施例提供了Si的不中断的选择性外延生长(SEG),其中非外延Si的外延生长和等离子体蚀刻在同一反应器中发生。使用本方法,掺硼的Si或其它掺杂剂的选择性外延生长也是可能的。
根据本发明原理的低温工艺开启了诸如下述应用的很多应用的可能性:器件的三维(3D)集成;在绝缘体上极薄半导体(ETSOI)、部分耗尽的SOI(PDSOI)、体硅衬底等上制造的晶体管的提升的源极/漏极(S/D)区;以及其它应用。
等离子体增强化学气相沉积(PECVD)也可以被用于非晶、微晶、多晶的低温沉积以及在低于300°C的温度下在c-Si衬底上的硅的外延生长。
附图中的流程图和框图示出了本发明各种实施例的可能实施方式的架构、功能和操作。应当注意,在一些备选实施方式中,框中标注的功能可以不按图中示出的顺序发生。例如,连续示出的两个框实际上可以基本上同时被执行,或者这些框有时可以以相反的顺序被执行,这取决于所涉及的功能。还应当注意,框图和/或流程示例中的每一个框,以及框图和/或流程示例中框的组合,可以由执行特定功能或动作的专用的基于硬件的系统或者由专用硬件与指令的组合实现。
应当理解,将就使用硅的给定示例性构造来描述本发明;然而,其它构造、结构、衬底材料以及工艺特征和步骤可以在本发明的范围内变化。
此处描述的器件可以是集成电路芯片设计的一部分。芯片设计可以在图形计算机编程语言中产生,并且被存储在计算机存储介质(例如盘、带、物理硬盘驱动器、或诸如存储访问网络(StorageAccessNetwork)的虚拟硬盘驱动器)中。如果设计者不制造芯片或者用于制造芯片的光刻掩模,则设计者可以直接或间接将所产生的设计通过物理手段(例如,通过提供一份存储有该设计的存储介质)或电子地(例如通过互联网)传送到这种实体。然后,所存储的设计可以被转换成适当的格式(例如,GDSII),以制造光刻掩模,光刻掩模典型地包含要形成在晶片上的多份所讨论的芯片设计。光刻掩模可用于限定晶片(和/或其上的层)的要蚀刻的或者要处理的区域。
此处描述的方法可以用于制造集成电路芯片。所得到的集成电路芯片可以以原始晶片的形式(即,作为具有多个未封装的芯片的单个晶片)、作为裸管芯或者以封装的形式由制造商分配。在后一种情况下,芯片被安装在单芯片封装体(例如塑料载体,具有固定到母板或其它更高级别的载体上的引线)中或者被安装在多芯片封装体(例如,具有表面互连或掩埋互连、或者具有表面互连和掩埋互连二者的陶瓷载体)中。在任何一种情况下,所述芯片然后可以作为(a)诸如母板的中间产品或(b)最终产品的一部分,与其它芯片、分立电路元件和/或其它信号处理装置集成。所述最终产品可以是包括集成电路芯片的任何产品,范围从玩具和其它低端应用到具有显示器、键盘或其它输入装置以及中央处理器的高级计算机产品。
现在参考其中相似的附图标记代表相同或相似的要素的附图并且首先参考图1,器件或晶片100包括衬底102,其中将应用根据本发明原理的方法。衬底102可以包括例如体单晶硅衬底、绝缘体上半导体(SOI)、极薄SOI(ETSOI)衬底、部分耗尽的SOI(PDSOI)衬底或其它衬底。其它衬底可以包括Ge、III-V衬底(例如GaAs)等。在本实施例中,硅是优选的用于外延生长的衬底材料;然而,根据本发明原理,也可以采用其它晶体衬底材料。
器件100可以被用于三维(3D)集成应用中或者需要外延生长来形成部件层的其它应用中。在特别有用的实施例中,采用外延生长来形成晶体管的提升的源极/漏极(S/D)区。本实施例将示例性地描述形成提升的S/D区,但本发明原理也适用于任何外延生长和蚀刻应用。
形成包括栅极绝缘体108(例如氧化物)、栅极导体110(例如,掺杂的多晶硅)和隔离物(spacer)112(例如,氮化物)的栅极结构106。也可以采用其它栅极结构和材料。图1示例性地示出了有刻面的(faceted)S/D区120,但S/D区120不必是有刻面的。通过外延生长形成S/D区120。该外延生长可以包括在硅衬底102的预定区域上的在低至150摄氏度的温度下的重掺杂或未掺杂的硅。在晶体硅(c-Si)暴露的地方这是优选的,因此选择性外延生长。
在一个实施例中,使用等离子体增强化学气相沉积工艺(PEVCD)在氢气稀释的硅烷环境中进行硅的选择性外延生长。在150摄氏度下氢气与硅烷气体的气体比([H2]/[SiH4])优选为0至约1000。在特别有用的实施例中,硅的外延生长在约5-10的气体比下开始。通过将氢气稀释度增加到例如5或更大,改善外延Si的质量。
可以使用各种气体源,例如,硅烷(SiH4)、二氯甲硅烷(DCS)、SiF4、SiCl4等,来生长外延硅。使用这些或其它气体,通过增加氢气的稀释度,改善外延硅的质量。对于更高的氢气稀释度,产生更平滑的界面(外延硅到晶体硅)并且观察到更少的堆垛层错和其它缺陷。
射频(RF)或直流(DC)等离子体增强化学气相沉积(CVD)优选在从约室温到约500摄氏度的沉积温度范围下进行,并且优选在从约150摄氏度到约250摄氏度的沉积温度范围下进行。等离子体功率密度的范围可以为约2mW/cm2到约2000mW/cm2。沉积压力范围可以为约10mtorr到约5torr。
在一个实施例中,高度掺杂剂激活可以在低至150摄氏度的温度下获得。这使得本发明的方法对于3D集成和提升的S/D制造中的应用有吸引力。外延Si可以包含例如碳、锗、磷、砷、硼等。低温外延Si可以生长在诸如Si、Ge和III-V的不同的衬底上。例如,本发明人根据本发明原理在约200摄氏度下将外延硅层生长在GaAs上。
参考图2A,示出了对于各种PH3气体流量,掺磷的外延硅(epi-Si)的薄层电阻率。对于各种PH3气体流量掺杂的~40-50nm厚的epi-Si的薄层电阻率表明硅中的高度掺杂剂激活。氢气与硅烷气体的比率为14。对被标记为1、2和3的样品进行二次离子质谱法(SIMS)。
图2B示出了样品1、2和3的P浓度(原子/cm3)与深度(nm)的关系。P浓度与PH3呈线性比例关系(见插图210)。从样品1和2的薄层电阻率测量得到的电活性掺杂剂的对应水平与由SIMS数据给出的实际掺杂剂浓度一致。然而,对于样品3,电活性的掺杂剂的浓度远低于总的所包含的掺杂剂,这从图2B的SIMS分析显而易见。对于样品3,通过增加[PH3]/[SiH4],硅的外延生长被打断,并且硅的非外延相开始生长。对于包含硼的情况,获得了类似的结果。应当理解,如果期望,则掺杂剂气体浓度应当保持为低于阈值气体比,以避免非晶体硅相或者提供非外延相。关于图2B,该阈值似乎大约是约5-8的[PH3]/[SiH4]的气体比。其它气体/掺杂剂工艺具有其它阈值。
参考图3A-3C,在另一个实施例中,可以通过在H2等离子体308中原位蚀刻非外延硅来获得衬底304的预定区域上的外延硅302的选择性生长。采用非晶硅的蚀刻工艺来在暴露的晶体硅区域上同时形成外延硅。应当理解,外延生长和蚀刻可以根据需要顺序地或同时地执行。在图3A中,在形成于衬底304上的绝缘体(例如,氧化硅(SiO2))层306中打开窗口312。在例如500mTorr、[H2]/[SiH4]=14并且功率密度为4mW/cm2的情况下,沉积硅302。结果,硅302在窗口区域312中外延,其中在窗口区域312,硅302暴露于衬底304的c-Si。绝缘体(例如氧化物)306上硅形成为非外延(例如非晶)硅310。
在图3B中,在900mtorr在150摄氏度下进行H2等离子体蚀刻308,得到c-Si304相对于a-Si:H310的近似1:3的蚀刻选择率。图3C示出了选择性外延硅302并且非外延(在这种情况下,非晶)Si310被去除。应当理解,可以使用诸如例如H2、HCl、Cl2、Ar等的气体来蚀刻生长在绝缘体306上的非外延部分(非晶Si310)。外延沉积和H2等离子体蚀刻可以在同一腔内顺序地或同时地进行。可以通过使负责外延生长的气体脉冲(例如,硅烷和掺杂剂物类(species))和蚀刻(等离子体蚀刻剂,例如H2、HCl等)或者通过使所有气体同时流动,来实现选择性外延生长。
参考图4,示例性地示出了用于选择性外延生长的方法。在框402中,提供衬底材料的暴露的晶体区域。这可以包括在电介质层中打开窗口或者对衬底上的层进行构图。衬底材料可以包括Si、Ge、III-V材料等。
在框404中,在低温工艺中将硅外延沉积在衬底材料上,其中沉积温度低于500摄氏度,并且优选地低于250摄氏度。该工艺对于衬底的暴露区域是选择性的。该工艺优选包括射频或直流等离子体增强化学气相沉积工艺。
在框408中,用包含H2、HCl、Cl2和Ar中的至少一种的稀释气体稀释源气体,其中稀释气体与源气体的气体比小于1000。源气体可以包括SiH4、二氯甲硅烷(DCS)、SiF4或SiCl4中的一种。在一个特别有用的实施例中,与H2一起使用SiH4,其中气体比[H2]/[SiH4]大于5。
在框410中,可以用提供掺杂的外延硅的气体比引入一个或多个掺杂剂物类。掺杂的外延硅可以包含碳、锗、磷、砷或硼中的至少一种。
参考图5,示例性地示出了用于选择性外延生长的另一种方法,该方法采用例如RF或DC等离子体增强化学气相沉积工艺。在框502中,提供晶体衬底材料。衬底材料可以包括Si、Ge、III-V材料等。在框504中,在衬底材料上生长氧化物或绝缘体。在框506中,绝缘体(例如,氧化物)被开口或被构图,以形成衬底材料的暴露区域。
在框512中,在低温工艺(例如,沉积温度低于500摄氏度,并且更优选地,低于250摄氏度)中在衬底材料的暴露区域上沉积硅以在暴露区域上形成外延硅并且在非暴露区上形成非外延硅。在框514中,硅沉积包括用包括H2、HCl、Cl2和Ar中的至少一种的稀释气体稀释源气体,其中稀释气体与源气体的气体比小于1000,其中源气体包括SiH4、二氯甲硅烷(DCS)、SiF4或SiCl4中的一种。
在框516中,使用等离子体选择性地蚀刻非外延(例如非晶或多晶)硅,并且在暴露区域之上进行硅的进一步外延沉积。等离子体可以包括H2、HCl、Cl2或Ar中的至少一种。
在框518中,可以用提供掺杂的外延硅的气体比引入一个或多个掺杂剂类。掺杂的外延硅可以包括碳、锗、磷、砷或硼中的至少一种。在框520中,通过使沉积和蚀刻步骤交替,或者同时进行沉积和蚀刻,提供选择性的外延生长。
已经描述了用于器件集成的硅的超低温选择性外延生长的优选实施例(这些优选实施例旨在为示例性的而非限制性的),应注意,本领域技术人员可以根据上述教导作出修改和改变。因此,应理解,可以在由所附权利要求书限定的本发明的范围内对所公开的特定实施例作出改变。已经由此以由专利法要求的详细说明和细节描述了本发明的各方面,所要求保护以及期望专利证书予以保护的内容在所附权利要求书中进行了阐述。
Claims (25)
1.一种外延方法,包括:
提供衬底材料的暴露的晶体区域;以及
通过用包括H2、HCl、Cl2和Ar中的至少一种的稀释气体稀释源气体,在低温工艺中在所述衬底材料上外延沉积硅,其中沉积温度低于500摄氏度,稀释气体与源气体的气体比小于1000。
2.根据权利要求1所述的方法,其中所述外延沉积硅包括射频或直流等离子体增强化学气相沉积工艺。
3.根据权利要求1所述的方法,其中所述源气体包括SiH4、二氯甲硅烷(DCS)、SiF4或SiCl4中的一种。
4.根据权利要求1所述的方法,其中所述沉积温度低于250摄氏度。
5.根据权利要求1所述的方法,其中所述衬底材料包括Si、Ge和III-V材料中的一种。
6.根据权利要求1所述的方法,其中稀释包括以大于5的气体比用H2稀释SiH4。
7.根据权利要求1所述的方法,还包括以提供掺杂的外延硅的气体比引入掺杂剂。
8.根据权利要求7所述的方法,其中所述掺杂的外延硅包括碳、锗、磷、砷或硼中的至少一种。
9.一种外延方法,包括:
提供晶体衬底材料;
在所述衬底材料上生长绝缘体;
对所述绝缘体开口以形成所述衬底材料的暴露区域;
在低温工艺中在所述衬底材料的所述暴露区域上沉积硅以在所述暴露区域上形成外延硅并且在非暴露区域上形成非外延硅,其中沉积温度低于500摄氏度,其中沉积硅包括用稀释气体稀释源气体,其中稀释气体与源气体的气体比小于1000;以及
使用等离子体蚀刻所述非外延硅,以在所述暴露区域之上进一步外延沉积硅。
10.根据权利要求9所述的方法,其中沉积硅包括射频或直流等离子体增强化学气相沉积工艺。
11.根据权利要求9所述的方法,其中沉积硅包括用包括H2、HCl、Cl2和Ar中的至少一种的稀释气体稀释源气体,其中所述源气体包括SiH4、二氯甲硅烷(DCS)、SiF4或SiCl4中的一种。
12.根据权利要求11所述的方法,其中稀释包括以大于5的气体比用H2稀释SiH4。
13.根据权利要求9所述的方法,其中所述沉积温度低于250摄氏度。
14.根据权利要求9所述的方法,其中所述衬底材料包括Si、Ge和III-V材料中的一种。
15.根据权利要求9所述的方法,还包括以提供掺杂的外延硅的气体比引入掺杂剂。
16.根据权利要求15所述的方法,其中所述掺杂的外延硅包括碳、锗、磷、砷或硼中的至少一种。
17.根据权利要求9所述的方法,其中所述等离子体包括H2、HCl、Cl2或Ar中的至少一种。
18.根据权利要求9所述的方法,其中通过使所述沉积和蚀刻步骤交替来提供选择性外延生长。
19.根据权利要求9所述的方法,其中沉积和蚀刻的步骤同时进行。
20.一种外延方法,包括:
提供衬底材料的暴露的晶体区域;以及
通过用H2稀释硅烷,在低温工艺中在所述衬底材料上选择性地外延沉积硅,其中沉积温度低于500摄氏度,稀释气体与源气体的气体比小于1000。
21.根据权利要求20所述的方法,其中所述外延沉积硅包括射频或直流等离子体增强化学气相沉积工艺。
22.根据权利要求20所述的方法,其中所述衬底材料包括Si、Ge和III-V材料中的一种。
23.根据权利要求20所述的方法,还包括以提供掺杂的外延硅的气体比引入掺杂剂。
24.根据权利要求23所述的方法,其中所述掺杂的外延硅包括碳、锗、磷、砷或硼中的至少一种。
25.根据权利要求20所述的方法,其中所述沉积温度低于150度。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/032,866 US10011920B2 (en) | 2011-02-23 | 2011-02-23 | Low-temperature selective epitaxial growth of silicon for device integration |
US13/032,866 | 2011-02-23 | ||
PCT/US2012/022716 WO2012115743A1 (en) | 2011-02-23 | 2012-01-26 | Low-temperature selective epitaxial growth of silicon for device integration |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103380480A CN103380480A (zh) | 2013-10-30 |
CN103380480B true CN103380480B (zh) | 2016-06-22 |
Family
ID=46651684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280009465.2A Active CN103380480B (zh) | 2011-02-23 | 2012-01-26 | 用于器件集成的硅的低温选择性外延生长 |
Country Status (5)
Country | Link |
---|---|
US (4) | US10011920B2 (zh) |
JP (1) | JP2014512669A (zh) |
CN (1) | CN103380480B (zh) |
DE (1) | DE112012000962B4 (zh) |
WO (1) | WO2012115743A1 (zh) |
Families Citing this family (217)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8871620B2 (en) | 2011-07-28 | 2014-10-28 | International Business Machines Corporation | III-V photovoltaic elements |
US8980737B2 (en) | 2012-05-24 | 2015-03-17 | International Business Machines Corporation | Methods of forming contact regions using sacrificial layers |
US8889529B2 (en) | 2012-05-24 | 2014-11-18 | International Business Machines Corporation | Heterojunction bipolar transistors with thin epitaxial contacts |
US9064924B2 (en) | 2012-05-24 | 2015-06-23 | International Business Machines Corporation | Heterojunction bipolar transistors with intrinsic interlayers |
US9093548B2 (en) | 2012-06-06 | 2015-07-28 | International Business Machines Corporation | Thin film hybrid junction field effect transistor |
US9166072B2 (en) | 2012-09-04 | 2015-10-20 | International Business Machines Corporation | Field-effect localized emitter photovoltaic device |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9059212B2 (en) * | 2012-10-31 | 2015-06-16 | International Business Machines Corporation | Back-end transistors with highly doped low-temperature contacts |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9859455B2 (en) | 2013-02-08 | 2018-01-02 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field |
US9640699B2 (en) | 2013-02-08 | 2017-05-02 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device |
US9231094B2 (en) | 2013-05-21 | 2016-01-05 | Globalfoundries Inc. | Elemental semiconductor material contact for high electron mobility transistor |
US9276077B2 (en) | 2013-05-21 | 2016-03-01 | Globalfoundries Inc. | Contact metallurgy for self-aligned high electron mobility transistor |
US9087705B2 (en) | 2013-06-05 | 2015-07-21 | International Business Machines Corporation | Thin-film hybrid complementary circuits |
US9356114B2 (en) | 2013-10-01 | 2016-05-31 | Globalfoundries Inc. | Lateral heterojunction bipolar transistor with low temperature recessed contacts |
US10651252B2 (en) | 2014-03-26 | 2020-05-12 | International Business Machines Corporation | Vertically integrated active matrix backplane |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10079288B2 (en) | 2016-06-07 | 2018-09-18 | International Business Machines Corporation | Contact formation on germanium-containing substrates using hydrogenated silicon |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11088033B2 (en) | 2016-09-08 | 2021-08-10 | International Business Machines Corporation | Low resistance source-drain contacts using high temperature silicides |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10504723B2 (en) * | 2017-01-05 | 2019-12-10 | Applied Materials, Inc. | Method and apparatus for selective epitaxy |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
WO2018194899A1 (en) * | 2017-04-21 | 2018-10-25 | Applied Materials, Inc. | Low temperature selective epitaxial silicon deposition |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
TWI711716B (zh) * | 2017-06-06 | 2020-12-01 | 美商應用材料股份有限公司 | 使用沉積-處理-蝕刻製程之矽的選擇性沉積 |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10347667B2 (en) | 2017-07-26 | 2019-07-09 | International Business Machines Corporation | Thin-film negative differential resistance and neuronal circuit |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
CN107731735B (zh) * | 2017-11-21 | 2020-02-14 | 长江存储科技有限责任公司 | 一种通过温和湿法刻蚀改善seg生长形态的seg制备工艺 |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
US10090415B1 (en) | 2017-11-29 | 2018-10-02 | International Business Machines Corporation | Thin film transistors with epitaxial source/drain contact regions |
US10256271B1 (en) | 2017-11-30 | 2019-04-09 | International Business Machines Corporation | Phase change memory array with integrated polycrystalline diodes |
US10312438B1 (en) | 2017-12-18 | 2019-06-04 | International Business Machines Corporation | Resistive memory with amorphous silicon filaments |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US10672490B2 (en) | 2018-01-17 | 2020-06-02 | International Business Machines Corporation | One-time-programmable memory in a high-density three-dimensional structure |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
CN112335032A (zh) | 2018-03-09 | 2021-02-05 | 应用材料公司 | 用于通过PECVD进行Si间隙填充的方法 |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10374103B1 (en) | 2018-03-28 | 2019-08-06 | International Business Machines Corporation | Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays |
US10930705B2 (en) | 2018-03-28 | 2021-02-23 | International Business Machines Corporation | Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
EP3830860A4 (en) | 2018-07-30 | 2022-04-20 | Applied Materials, Inc. | PROCESS FOR SELECTIVE SILICON-GERMANIUM EPITAXY AT LOW TEMPERATURES |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10615225B2 (en) | 2018-08-22 | 2020-04-07 | International Business Machines Corporation | Multilayer back end of line (BEOL)-stackable cross-point memory array with complementary pass transistor selectors |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US10903275B2 (en) | 2019-06-03 | 2021-01-26 | International Business Machines Corporation | Three-dimensional stackable multi-layer cross-point memory with single-crystalline bipolar junction transistor selectors |
US11018188B2 (en) | 2019-06-03 | 2021-05-25 | International Business Machines Corporation | Three-dimensional stackable multi-layer cross-point memory with bipolar junction transistor selectors |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US20230307506A1 (en) * | 2022-03-22 | 2023-09-28 | Applied Materials, Inc. | Low temperature n-type contact epi formation |
CN115491655A (zh) * | 2022-10-05 | 2022-12-20 | 江苏筑磊电子科技有限公司 | 一种半导体技术中用于低温清洁和沉积的微波等离子辅助方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5580381A (en) * | 1990-11-15 | 1996-12-03 | Canon Kabushiki Kaisha | Method of forming crystal |
CN1365139A (zh) * | 2001-04-12 | 2002-08-21 | 中国科学院长春光学精密机械与物理研究所 | 在低温下对硅表面氧化物的去除和外延生长方法 |
US7816236B2 (en) * | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4473597A (en) | 1978-02-01 | 1984-09-25 | Rca Corporation | Method and structure for passivating a PN junction |
US4686763A (en) | 1985-10-02 | 1987-08-18 | Advanced Micro Devices, Inc. | Method of making a planar polysilicon bipolar device |
US5159424A (en) | 1988-12-10 | 1992-10-27 | Canon Kabushiki Kaisha | Semiconductor device having a high current gain and a higher ge amount at the base region than at the emitter and collector region, and photoelectric conversion apparatus using the device |
US5106767A (en) | 1990-12-07 | 1992-04-21 | International Business Machines Corporation | Process for fabricating low capacitance bipolar junction transistor |
US5117271A (en) | 1990-12-07 | 1992-05-26 | International Business Machines Corporation | Low capacitance bipolar junction transistor and fabrication process therfor |
JPH04333288A (ja) | 1991-05-08 | 1992-11-20 | Canon Inc | 太陽電池の製造方法 |
FR2711276B1 (fr) | 1993-10-11 | 1995-12-01 | Neuchatel Universite | Cellule photovoltaïque et procédé de fabrication d'une telle cellule. |
US5895766A (en) | 1995-09-20 | 1999-04-20 | Micron Technology, Inc. | Method of forming a field effect transistor |
US6020246A (en) | 1998-03-13 | 2000-02-01 | National Semiconductor Corporation | Forming a self-aligned epitaxial base bipolar transistor |
JP4228458B2 (ja) | 1999-03-16 | 2009-02-25 | ソニー株式会社 | 半導体装置の製造方法 |
CH694699A5 (de) * | 1999-04-29 | 2005-06-15 | Balzers Hochvakuum | Verfahren zur Herstellung von Silizium. |
US7476420B2 (en) | 2000-10-23 | 2009-01-13 | Asm International N.V. | Process for producing metal oxide films at low temperatures |
JP2002217433A (ja) | 2001-01-18 | 2002-08-02 | Sharp Corp | 半導体装置 |
US6617220B2 (en) | 2001-03-16 | 2003-09-09 | International Business Machines Corporation | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base |
NL1017849C2 (nl) | 2001-04-16 | 2002-10-30 | Univ Eindhoven Tech | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
US6759731B2 (en) | 2002-06-05 | 2004-07-06 | United Microelectronics Corp. | Bipolar junction transistor and fabricating method |
KR100460066B1 (ko) * | 2002-07-19 | 2004-12-04 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
JP2004103855A (ja) | 2002-09-10 | 2004-04-02 | Canon Inc | 基板及びその製造方法 |
US6872606B2 (en) | 2003-04-03 | 2005-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with raised segment |
US6998275B2 (en) | 2003-04-09 | 2006-02-14 | Texas Instruments Incorporated | Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application |
US8664525B2 (en) | 2003-05-07 | 2014-03-04 | Imec | Germanium solar cell and method for the production thereof |
KR100586737B1 (ko) | 2003-12-26 | 2006-06-08 | 한국전자통신연구원 | SOI 기판 위에 구현된 NMOS 소자, PMOS 소자및 SiGe BiCMOS 소자 및 그 제조 방법 |
US20060084243A1 (en) | 2004-10-20 | 2006-04-20 | Ying Zhang | Oxidation sidewall image transfer patterning method |
US20060130891A1 (en) | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
FR2880989B1 (fr) | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
US7468485B1 (en) | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
US7405140B2 (en) * | 2005-08-18 | 2008-07-29 | Tokyo Electron Limited | Low temperature formation of patterned epitaxial Si containing films |
KR20080089403A (ko) | 2005-12-22 | 2008-10-06 | 에이에스엠 아메리카, 인코포레이티드 | 도핑된 반도체 물질들의 에피택시 증착 |
US20070169808A1 (en) | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
US20070235759A1 (en) | 2006-04-11 | 2007-10-11 | International Business Machines Corporation | CMOS process with Si gates for nFETs and SiGe gates for pFETs |
US7737357B2 (en) | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
CN101548032A (zh) * | 2006-05-15 | 2009-09-30 | 阿里斯技术公司 | 硅片器件的低温掺杂方法 |
DE102006042617B4 (de) | 2006-09-05 | 2010-04-08 | Q-Cells Se | Verfahren zur Erzeugung von lokalen Kontakten |
AU2008229050A1 (en) | 2007-03-16 | 2008-09-25 | Bp Corporation North America Inc. | Solar cells |
JP5142565B2 (ja) | 2007-03-20 | 2013-02-13 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP2008311286A (ja) | 2007-06-12 | 2008-12-25 | Canon Inc | 半導体薄膜及びその製造方法 |
US8053810B2 (en) | 2007-09-07 | 2011-11-08 | International Business Machines Corporation | Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same |
DE102007059486A1 (de) | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür |
US20090151623A1 (en) * | 2007-12-12 | 2009-06-18 | Atmel Corporation | Formation and applications of high-quality epitaxial films |
TW200947725A (en) | 2008-01-24 | 2009-11-16 | Applied Materials Inc | Improved HIT solar cell structure |
US7622365B2 (en) | 2008-02-04 | 2009-11-24 | Micron Technology, Inc. | Wafer processing including dicing |
JP2009200419A (ja) | 2008-02-25 | 2009-09-03 | Seiko Epson Corp | 太陽電池の製造方法 |
JP2011517120A (ja) | 2008-04-09 | 2011-05-26 | アプライド マテリアルズ インコーポレイテッド | ポリシリコンエミッタ太陽電池用簡易裏面接触 |
US7999175B2 (en) | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
TWI514595B (zh) | 2008-09-24 | 2015-12-21 | Semiconductor Energy Lab | 光電轉換裝置及其製造方法 |
WO2010050035A1 (ja) | 2008-10-30 | 2010-05-06 | 三菱重工業株式会社 | 光電変換装置の製造方法 |
US20100186802A1 (en) | 2009-01-27 | 2010-07-29 | Peter Borden | Hit solar cell structure |
GB2467360A (en) | 2009-01-30 | 2010-08-04 | Renewable Energy Corp Asa | Contact for a solar cell |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
DE102009024807B3 (de) | 2009-06-02 | 2010-10-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren |
US8169024B2 (en) | 2009-08-18 | 2012-05-01 | International Business Machines Corporation | Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation |
KR101248163B1 (ko) | 2009-09-10 | 2013-03-27 | 엘지전자 주식회사 | 이면 접합형 태양 전지 및 그 제조 방법 |
US20110132444A1 (en) | 2010-01-08 | 2011-06-09 | Meier Daniel L | Solar cell including sputtered reflective layer and method of manufacture thereof |
US8790957B2 (en) | 2010-03-04 | 2014-07-29 | Sunpower Corporation | Method of fabricating a back-contact solar cell and device thereof |
KR20130038829A (ko) | 2010-04-06 | 2013-04-18 | 코비오 인코포레이티드 | 에피택셜 구조, 그 제조방법, 및 그것을 포함하는 소자 |
US8686283B2 (en) | 2010-05-04 | 2014-04-01 | Silevo, Inc. | Solar cell with oxide tunneling junctions |
US8338211B2 (en) | 2010-07-27 | 2012-12-25 | Amtech Systems, Inc. | Systems and methods for charging solar cell layers |
US9099596B2 (en) | 2011-07-29 | 2015-08-04 | International Business Machines Corporation | Heterojunction photovoltaic device and fabrication method |
US20130228221A1 (en) | 2011-08-05 | 2013-09-05 | Solexel, Inc. | Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices |
US9640676B2 (en) | 2012-06-29 | 2017-05-02 | Sunpower Corporation | Methods and structures for improving the structural integrity of solar cells |
-
2011
- 2011-02-23 US US13/032,866 patent/US10011920B2/en active Active
-
2012
- 2012-01-26 DE DE112012000962.2T patent/DE112012000962B4/de active Active
- 2012-01-26 CN CN201280009465.2A patent/CN103380480B/zh active Active
- 2012-01-26 JP JP2013555427A patent/JP2014512669A/ja active Pending
- 2012-01-26 WO PCT/US2012/022716 patent/WO2012115743A1/en active Application Filing
-
2015
- 2015-05-13 US US14/711,403 patent/US20150247259A1/en not_active Abandoned
-
2016
- 2016-12-07 US US15/371,366 patent/US20170081781A1/en not_active Abandoned
-
2018
- 2018-05-10 US US15/976,224 patent/US20180258549A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5580381A (en) * | 1990-11-15 | 1996-12-03 | Canon Kabushiki Kaisha | Method of forming crystal |
CN1365139A (zh) * | 2001-04-12 | 2002-08-21 | 中国科学院长春光学精密机械与物理研究所 | 在低温下对硅表面氧化物的去除和外延生长方法 |
US7816236B2 (en) * | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
Also Published As
Publication number | Publication date |
---|---|
US20170081781A1 (en) | 2017-03-23 |
US10011920B2 (en) | 2018-07-03 |
WO2012115743A1 (en) | 2012-08-30 |
US20150247259A1 (en) | 2015-09-03 |
DE112012000962T5 (de) | 2013-11-21 |
JP2014512669A (ja) | 2014-05-22 |
CN103380480A (zh) | 2013-10-30 |
US20120210932A1 (en) | 2012-08-23 |
DE112012000962B4 (de) | 2020-11-12 |
US20180258549A1 (en) | 2018-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103380480B (zh) | 用于器件集成的硅的低温选择性外延生长 | |
US9287399B2 (en) | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | |
JP5173140B2 (ja) | 電気的に活性なドープト結晶性Si含有膜の堆積方法 | |
US20170330965A1 (en) | Air-gap top spacer and self-aligned metal gate for vertical fets | |
US8900934B2 (en) | FinFET devices containing merged epitaxial Fin-containing contact regions | |
US20050245058A1 (en) | Method for producing high throughput strained-si channel mosfets | |
CN103956323B (zh) | 半导体器件及其形成方法、非瞬时计算机可读存储介质 | |
CN103094089B (zh) | 鳍式场效应晶体管栅极氧化物 | |
US9093275B2 (en) | Multi-height multi-composition semiconductor fins | |
CN103871894A (zh) | 半导体器件及其形成方法 | |
US9184290B2 (en) | Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer | |
US20140252500A1 (en) | Sacrificial replacement extension layer to obtain abrupt doping profile | |
JP2007537601A (ja) | 選択的堆積プロセスを使用したmosfetデバイスの作製方法 | |
US9129938B1 (en) | Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors | |
US9577065B2 (en) | Back-end transistors with highly doped low-temperature contacts | |
US20070298594A1 (en) | Semiconductor device fabrication method | |
US8928107B2 (en) | Light detection devices and methods of manufacturing the same | |
US9240447B1 (en) | finFETs containing improved strain benefit and self aligned trench isolation structures | |
CN103000499A (zh) | 一种锗硅硼外延层生长方法 | |
US10283463B2 (en) | Terahertz detector comprised of P-N junction diode | |
US7202142B2 (en) | Method for producing low defect density strained -Si channel MOSFETS | |
US9437675B1 (en) | eDRAM for planar III-V semiconductor devices | |
CN104425379A (zh) | 半导体器件的形成方法 | |
CN109300788A (zh) | 半导体结构及其形成方法 | |
JP2001126989A (ja) | 半導体薄膜の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |