CN103261969B - 用于生产结构化基板的装置 - Google Patents
用于生产结构化基板的装置 Download PDFInfo
- Publication number
- CN103261969B CN103261969B CN201180060845.4A CN201180060845A CN103261969B CN 103261969 B CN103261969 B CN 103261969B CN 201180060845 A CN201180060845 A CN 201180060845A CN 103261969 B CN103261969 B CN 103261969B
- Authority
- CN
- China
- Prior art keywords
- structured substrate
- fluent material
- substrate
- collecting
- produce structured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 103
- 239000000463 material Substances 0.000 claims abstract description 139
- 239000007789 gas Substances 0.000 claims abstract description 59
- 239000007788 liquid Substances 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000003860 storage Methods 0.000 claims description 41
- 239000002904 solvent Substances 0.000 claims description 27
- 238000007872 degassing Methods 0.000 claims description 18
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims description 13
- 239000002808 molecular sieve Substances 0.000 claims description 11
- 238000007791 dehumidification Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 238000005292 vacuum distillation Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000033001 locomotion Effects 0.000 claims description 5
- 239000011344 liquid material Substances 0.000 claims description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 36
- 238000004519 manufacturing process Methods 0.000 abstract description 33
- 238000013461 design Methods 0.000 abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000011247 coating layer Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000000306 component Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 3
- 229910021536 Zeolite Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010457 zeolite Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007127 saponification reaction Methods 0.000 description 2
- 206010067484 Adverse reaction Diseases 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000007863 gel particle Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- OGFXBIXJCWAUCH-UHFFFAOYSA-N meso-secoisolariciresinol Natural products C1=2C=C(O)C(OC)=CC=2CC(CO)C(CO)C1C1=CC=C(O)C(OC)=C1 OGFXBIXJCWAUCH-UHFFFAOYSA-N 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000505 pernicious effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
- B05C11/1039—Recovery of excess liquid or other fluent material; Controlling means therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3092—Recovery of material; Waste processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
- Drying Of Solid Materials (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202010015018U DE202010015018U1 (de) | 2010-11-07 | 2010-11-07 | Anordnung zur Herstellung von strukturierten Substraten |
DE202010015018.3 | 2010-11-07 | ||
PCT/DE2011/001940 WO2012059087A2 (de) | 2010-11-07 | 2011-11-07 | Anordnung zur herstellung von strukturierten substraten |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103261969A CN103261969A (zh) | 2013-08-21 |
CN103261969B true CN103261969B (zh) | 2017-09-05 |
Family
ID=43877983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180060845.4A Expired - Fee Related CN103261969B (zh) | 2010-11-07 | 2011-11-07 | 用于生产结构化基板的装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9508542B2 (zh) |
EP (1) | EP2635936B1 (zh) |
JP (1) | JP5921561B2 (zh) |
KR (1) | KR101868023B1 (zh) |
CN (1) | CN103261969B (zh) |
DE (1) | DE202010015018U1 (zh) |
WO (1) | WO2012059087A2 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3057391B1 (fr) * | 2016-10-11 | 2019-03-29 | Soitec | Equipement de traitement thermique avec dispositif collecteur |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6863019B2 (en) * | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
CN1732555A (zh) * | 2002-12-26 | 2006-02-08 | 东京毅力科创株式会社 | 涂布处理装置和涂布膜形成方法 |
CN101067721A (zh) * | 2006-05-03 | 2007-11-07 | 3D系统公司 | 用于实体成像的材料输送系统 |
Family Cites Families (30)
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JPS63160223A (ja) * | 1986-12-23 | 1988-07-04 | Nec Corp | レジスト塗布装置 |
JPH0434902Y2 (zh) * | 1987-01-13 | 1992-08-19 | ||
AT389959B (de) * | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
EP0403086B1 (en) * | 1989-06-14 | 1996-02-28 | Hewlett-Packard Company | Method for improving deposit of photoresist on wafers |
JP3116297B2 (ja) * | 1994-08-03 | 2000-12-11 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
JPH0934121A (ja) * | 1995-07-20 | 1997-02-07 | Hitachi Ltd | リサイクル型レジストプロセス |
DE19605602C1 (de) * | 1996-02-15 | 1997-11-20 | Singulus Technologies Gmbh | Vorrichtung zur Oberflächenbeschichtung bzw. zum Lackieren von Substraten |
JPH10256139A (ja) * | 1997-03-17 | 1998-09-25 | Hitachi Ltd | フォトレジスト塗布装置 |
TW418452B (en) * | 1997-10-31 | 2001-01-11 | Tokyo Electron Ltd | Coating process |
JP3352371B2 (ja) * | 1997-10-31 | 2002-12-03 | 東京エレクトロン株式会社 | 塗布装置 |
JP3913869B2 (ja) * | 1997-11-21 | 2007-05-09 | 沖電気工業株式会社 | 基板処理装置 |
JP3721016B2 (ja) * | 1999-09-30 | 2005-11-30 | 宮崎沖電気株式会社 | レジスト処理装置 |
JP2001269609A (ja) * | 2000-03-28 | 2001-10-02 | Tokyo Electron Ltd | 塗布処理装置 |
TW516076B (en) * | 2000-06-13 | 2003-01-01 | Applied Materials Inc | Method and apparatus for increasing the utilization efficiency of gases during semiconductor processing |
JP2002353181A (ja) * | 2001-05-30 | 2002-12-06 | Ses Co Ltd | 枚葉式基板洗浄方法および枚葉式基板洗浄装置 |
JP2002361155A (ja) * | 2001-06-01 | 2002-12-17 | Tokyo Electron Ltd | 塗布処理装置及びその方法 |
JP2003043505A (ja) * | 2001-07-31 | 2003-02-13 | Hitachi Ltd | 液晶注入装置 |
AT500984B1 (de) * | 2002-06-25 | 2007-05-15 | Sez Ag | Vorrichtung zur flüssigkeitsbehandlung von scheibenförmigen gegenständen |
US7584760B2 (en) * | 2002-09-13 | 2009-09-08 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
JP4078163B2 (ja) * | 2002-09-13 | 2008-04-23 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4146709B2 (ja) * | 2002-10-31 | 2008-09-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4223293B2 (ja) * | 2003-01-20 | 2009-02-12 | 大日本スクリーン製造株式会社 | 基板処理装置 |
DE10325251A1 (de) * | 2003-06-03 | 2005-03-24 | Röhm GmbH & Co. KG | Verfahren und Anordnung zur Depolymerisation |
JP2005215627A (ja) * | 2004-02-02 | 2005-08-11 | Japan Organo Co Ltd | レジスト剥離廃液の再生処理方法及び装置 |
JP2006086384A (ja) * | 2004-09-16 | 2006-03-30 | Ses Co Ltd | 基板処理装置 |
DE102005041137A1 (de) * | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
DE202005020274U1 (de) * | 2005-12-23 | 2006-02-23 | Bohnet, Saskia | Beschichtungsanlage für Wafer |
US20070254098A1 (en) * | 2006-04-28 | 2007-11-01 | Applied Materials, Inc. | Apparatus for single-substrate processing with multiple chemicals and method of use |
JP2007311446A (ja) * | 2006-05-17 | 2007-11-29 | Realize Advanced Technology Ltd | 洗浄装置 |
JP5257915B2 (ja) * | 2006-09-29 | 2013-08-07 | 国立大学法人東北大学 | 膜塗布装置および膜塗布方法 |
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2010
- 2010-11-07 DE DE202010015018U patent/DE202010015018U1/de not_active Expired - Lifetime
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2011
- 2011-11-07 JP JP2013536999A patent/JP5921561B2/ja not_active Expired - Fee Related
- 2011-11-07 EP EP11818940.6A patent/EP2635936B1/de not_active Not-in-force
- 2011-11-07 WO PCT/DE2011/001940 patent/WO2012059087A2/de active Application Filing
- 2011-11-07 KR KR1020137014594A patent/KR101868023B1/ko active IP Right Grant
- 2011-11-07 CN CN201180060845.4A patent/CN103261969B/zh not_active Expired - Fee Related
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2013
- 2013-05-07 US US13/888,499 patent/US9508542B2/en active Active
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US6863019B2 (en) * | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
CN1732555A (zh) * | 2002-12-26 | 2006-02-08 | 东京毅力科创株式会社 | 涂布处理装置和涂布膜形成方法 |
CN101067721A (zh) * | 2006-05-03 | 2007-11-07 | 3D系统公司 | 用于实体成像的材料输送系统 |
Also Published As
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EP2635936A2 (de) | 2013-09-11 |
US9508542B2 (en) | 2016-11-29 |
WO2012059087A2 (de) | 2012-05-10 |
US20130239883A1 (en) | 2013-09-19 |
WO2012059087A3 (de) | 2012-06-28 |
KR20140006803A (ko) | 2014-01-16 |
KR101868023B1 (ko) | 2018-06-18 |
JP2013544433A (ja) | 2013-12-12 |
JP5921561B2 (ja) | 2016-05-24 |
CN103261969A (zh) | 2013-08-21 |
EP2635936B1 (de) | 2018-02-21 |
DE202010015018U1 (de) | 2011-04-14 |
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