CN103201824B - 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法 - Google Patents

由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法 Download PDF

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Publication number
CN103201824B
CN103201824B CN201180052929.3A CN201180052929A CN103201824B CN 103201824 B CN103201824 B CN 103201824B CN 201180052929 A CN201180052929 A CN 201180052929A CN 103201824 B CN103201824 B CN 103201824B
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reaction
boron
zone
temperature
reaction chamber
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Chinese (zh)
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CN103201824A (zh
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O·比尔
E·E·琼斯
C·派迪
J·D·斯威尼
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Entegris Inc
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Advanced Technology Materials Inc
Entegris Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
    • B01J8/0285—Heating or cooling the reactor
    • H10P30/20—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/02—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds
    • B01J8/04—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds
    • B01J8/0446—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds the flow within the beds being predominantly vertical
    • B01J8/0461—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds the flow within the beds being predominantly vertical in two or more cylindrical annular shaped beds
    • B01J8/0465—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds the flow within the beds being predominantly vertical in two or more cylindrical annular shaped beds the beds being concentric
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • C01B35/061—Halides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00433—Controlling the temperature using electromagnetic heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00539—Pressure

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
CN201180052929.3A 2010-08-30 2011-08-28 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法 Active CN103201824B (zh)

Priority Applications (1)

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CN201610643193.1A CN106237934B (zh) 2010-08-30 2011-08-28 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37837510P 2010-08-30 2010-08-30
US61/378,375 2010-08-30
PCT/US2011/049473 WO2012030679A2 (en) 2010-08-30 2011-08-28 Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates

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CN103201824A CN103201824A (zh) 2013-07-10
CN103201824B true CN103201824B (zh) 2016-09-07

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CN201610643193.1A Active CN106237934B (zh) 2010-08-30 2011-08-28 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法

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US (2) US9205392B2 (enExample)
EP (1) EP2612349A4 (enExample)
JP (2) JP5908476B2 (enExample)
KR (1) KR101902022B1 (enExample)
CN (2) CN103201824B (enExample)
TW (2) TWI538020B (enExample)
WO (1) WO2012030679A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7722832B2 (en) 2003-03-25 2010-05-25 Crystaphase International, Inc. Separation method and assembly for process streams in component separation units
TWI450994B (zh) 2005-08-30 2014-09-01 尖端科技材料股份有限公司 利用選擇性氟化硼前驅物之硼離子植入方法，及供植入用之大群氫化硼之形成方法
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
CN103201824B (zh) 2010-08-30 2016-09-07 恩特格里斯公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
US10744426B2 (en) 2015-12-31 2020-08-18 Crystaphase Products, Inc. Structured elements and methods of use
US10054140B2 (en) 2016-02-12 2018-08-21 Crystaphase Products, Inc. Use of treating elements to facilitate flow in vessels
CN110656024B (zh) * 2018-06-29 2024-06-04 厦门大学 微流控芯片和生化检测装置
JP7460770B2 (ja) 2019-12-20 2024-04-02 クリスタフェーズ・プロダクツ・インコーポレーテッド 液体フィードストリーム中へのガスの再飽和
KR20230070206A (ko) 2020-09-09 2023-05-22 크라이스타페이즈 프로덕츠, 인크. 공정 용기 진입 구역

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935293A (en) * 1995-03-14 1999-08-10 Lockheed Martin Idaho Technologies Company Fast quench reactor method
CN1917947A (zh) * 2004-02-11 2007-02-21 万罗赛斯公司 应用微通道技术实施平衡限制性化学反应的方法
CN101291742A (zh) * 2005-08-30 2008-10-22 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5064172A (enExample) * 1973-10-12 1975-05-31
JPS588071A (ja) 1981-07-08 1983-01-18 Nippon Iyakuhin Kogyo Kk ２−ベンゾチアゾリノン−３−酢酸アミド誘導体またはその薬学的に活性な塩類の製造法
US4459427A (en) 1981-10-31 1984-07-10 The British Petroleum Company P.L.C. Process for the conversion of an alkane to a mixture of an alcohol and a ketone
JPS60221566A (ja) 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
JPS60251928A (ja) * 1984-05-29 1985-12-12 Toyota Motor Corp 金属化合物超微粒子の製造方法
US4722978A (en) 1985-08-30 1988-02-02 The B. F. Goodrich Company Allyl terminated macromolecular monomers of polyethers
US4680358A (en) 1985-11-08 1987-07-14 The B F Goodrich Company Styryl terminated macromolecular monomers of polyethers
JPS6315228A (ja) 1986-07-08 1988-01-22 Asahi Glass Co Ltd エレクトロクロミツク素子
JPH0772167B2 (ja) 1986-09-04 1995-08-02 サントリー株式会社 ４―アミノ―３―ヒドロキシ酪酸誘導体の製法
US4851255A (en) 1986-12-29 1989-07-25 Air Products And Chemicals, Inc. Ion implant using tetrafluoroborate
JPH0782119B2 (ja) 1987-08-03 1995-09-06 三菱電機株式会社 イオンビーム照射方法
JPS6483147A (en) 1987-09-25 1989-03-28 Olympus Optical Co Manufacture of chemical sensitivity field effect transistor
JPH01225117A (ja) 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法及びその製造装置
JP2699549B2 (ja) 1988-06-03 1998-01-19 日産化学工業株式会社 ４―ベンゾイル―５―ヒドロキシピラゾール類の製法
JP2533639B2 (ja) 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Ｐ形炭素添加非晶質シリコンの生成方法
US4987933A (en) 1989-03-03 1991-01-29 Eaton Corporation Fluid flow control method and apparatus for minimizing particle contamination
US5149514A (en) * 1989-04-04 1992-09-22 Sri International Low temperature method of forming materials using one or more metal reactants and a halogen-containing reactant to form one or more reactive intermediates
JPH04501886A (ja) * 1989-04-04 1992-04-02 エス・アール・アイ・インターナシヨナル １種もしくはそれ以上の金属反応体とハロゲン含有反応体とを用いて１種もしくはそれ以上の反応性中間体を生成させる材料の低温度形成方法
JPH05254808A (ja) 1992-03-10 1993-10-05 Semiconductor Energy Lab Co Ltd 窒化ほう素の作製方法
JPH0680681A (ja) 1992-07-15 1994-03-22 Nippon Kayaku Co Ltd ホスホニウム化合物及びそれを用いた電子写真用トナー
JP3541387B2 (ja) 1993-06-23 2004-07-07 東レ株式会社 電池用電極，それを用いた二次電池，および電池用電極の製造方法
JPH0790201A (ja) 1993-09-22 1995-04-04 Hokko Chem Ind Co Ltd 水中防汚塗料
US5443732A (en) 1994-04-01 1995-08-22 Westinghouse Electric Corporation Boron isotope separation using continuous ion exchange chromatography
US5977552A (en) * 1995-11-24 1999-11-02 Applied Materials, Inc. Boron ion sources for ion implantation apparatus
EP0791557B1 (en) * 1996-02-20 1999-09-22 Nippon Petrochemicals Co., Ltd. Method for separating and recovering boron trifluoride
US5993766A (en) 1996-05-20 1999-11-30 Advanced Technology Materials, Inc. Gas source and dispensing system
GB2317265A (en) 1996-09-13 1998-03-18 Aea Technology Plc Radio frequency plasma generator
JPH10251592A (ja) 1997-03-07 1998-09-22 Kansai Paint Co Ltd 塗料組成物およびその塗装法
US5935283A (en) * 1996-12-31 1999-08-10 Atmi Ecosys Corporation Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system
US6086837A (en) 1997-04-24 2000-07-11 Bechtel Bwxt Idaho, Llc Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals
US6096467A (en) 1997-11-19 2000-08-01 Mita Industrial Co., Ltd. Positive charging color toner
US6135128A (en) 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6310240B1 (en) 1998-12-23 2001-10-30 E. I. Du Pont De Nemours And Company Vapor phase oxidation of acrolein to acrylic acid
US6614082B1 (en) 1999-01-29 2003-09-02 Micron Technology, Inc. Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
US6376664B1 (en) 1999-03-17 2002-04-23 The Ohio State University Cyclic bis-benzimidazole ligands and metal complexes thereof
EP1200185A2 (en) 1999-06-25 2002-05-02 Avantium International B.V. Reactor vessel array
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
EP2426693A3 (en) 1999-12-13 2013-01-16 Semequip, Inc. Ion source
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US7838842B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
ATE249532T1 (de) 2000-02-04 2003-09-15 Aixtron Ag Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat
US6420304B1 (en) 2000-04-20 2002-07-16 China Petrochemical Development Corporation Polymer-supported carbonylation catalyst and its use
AU2001269905A1 (en) 2000-06-19 2002-01-08 Kimberly-Clark Worldwide, Inc. Novel photoinitiators and applications therefor
KR20000072651A (ko) 2000-08-08 2000-12-05 이관호 식물 신품종 쌈추 및 그 육종방법
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US20020058385A1 (en) 2000-10-26 2002-05-16 Taiji Noda Semiconductor device and method for manufacturing the same
US6670623B2 (en) 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
KR100412129B1 (ko) 2001-04-30 2003-12-31 주식회사 하이닉스반도체 반도체소자의 접합 형성방법
WO2003057667A2 (en) 2001-12-31 2003-07-17 The Ohio State University Research Foundation Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications
GB2417365B (en) 2002-03-28 2006-05-17 Applied Materials Inc Monatomic boron ion source and method
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
JP4749713B2 (ja) * 2002-06-26 2011-08-17 セムエキップ インコーポレイテッド 水素化ホウ素クラスターイオンの注入によるイオン注入方法及び半導体製造方法
US20040002202A1 (en) 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
KR100464935B1 (ko) 2002-09-17 2005-01-05 주식회사 하이닉스반도체 불화붕소화합물 도핑에 의한 초박형 에피채널을 갖는반도체소자의 제조 방법
US20040110351A1 (en) 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
WO2004053945A2 (en) 2002-12-12 2004-06-24 Epion Corporation Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation
US6780896B2 (en) 2002-12-20 2004-08-24 Kimberly-Clark Worldwide, Inc. Stabilized photoinitiators and applications thereof
US6989528B2 (en) 2003-06-06 2006-01-24 Ionwerks, Inc. Gold implantation/deposition of biological samples for laser desorption three dimensional depth profiling of tissues
US7759254B2 (en) 2003-08-25 2010-07-20 Panasonic Corporation Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
JP2005093518A (ja) 2003-09-12 2005-04-07 Matsushita Electric Ind Co Ltd 不純物導入の制御方法および不純物導入装置
TWI375660B (en) * 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US7397048B2 (en) 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US7687025B2 (en) 2004-11-12 2010-03-30 The Boeing Company Isotopic lightening
US20060104851A1 (en) 2004-11-12 2006-05-18 Tillotson Brian J Isotopic densification of propellant
JP2008522429A (ja) 2004-12-03 2008-06-26 エピオン コーポレーション ガスクラスタイオン照射による極浅接合部の形成
EP1869209A2 (fr) 2005-03-07 2007-12-26 Laurence Faure Traçabilite des anomalies du cycle cellulaire ciblant l'oncologie et la neurodegenerescence.
US20100112795A1 (en) 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
DE102005054218B4 (de) 2005-11-14 2011-06-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement
JP5193060B2 (ja) 2005-12-20 2013-05-08 ハー．ツェー．スタルク ゲゼルシャフト ミット ベシュレンクテル ハフツング 金属ホウ化物
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7429671B2 (en) * 2006-12-06 2008-09-30 Air Products And Chemicals, Inc. Process for the fluorination of boron hydrides
US7732309B2 (en) 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US7887634B2 (en) 2006-12-22 2011-02-15 Infineon Technologies Ag Method of producing a semiconductor element and semiconductor element
US7833886B2 (en) 2007-05-14 2010-11-16 Infineon Technologies Ag Method of producing a semiconductor element in a substrate
CN101214970B (zh) 2008-01-17 2010-06-16 核工业理化工程研究院华核新技术开发公司 制备高纯三氟化硼气体的工艺方法及设备
EP2283509A1 (en) 2008-05-30 2011-02-16 Axcelis Technologies, Inc. Control of particles on semiconductor wafers when implanting boron hydrides
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
JP5341425B2 (ja) * 2008-08-08 2013-11-13 ステラケミファ株式会社 フッ化物ガスの製造方法
US20100266087A1 (en) * 2009-04-16 2010-10-21 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Nuclear fission reactor, flow control assembly, methods therefor and a flow control assembly system
SG10201605310RA (en) 2009-10-27 2016-08-30 Entegris Inc Ion implantation system and method
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
CN103201824B (zh) 2010-08-30 2016-09-07 恩特格里斯公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935293A (en) * 1995-03-14 1999-08-10 Lockheed Martin Idaho Technologies Company Fast quench reactor method
CN1917947A (zh) * 2004-02-11 2007-02-21 万罗赛斯公司 应用微通道技术实施平衡限制性化学反应的方法
CN101291742A (zh) * 2005-08-30 2008-10-22 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Boron-Fluorine Chemistry. I. Boron Monofluoride and Some Derivatives;P.L.Timms;《Journal of the American Chemical Society》;19670329;第7卷(第89期);第1629-1632页 *

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Publication number Publication date
KR101902022B1 (ko) 2018-09-27
US9205392B2 (en) 2015-12-08
EP2612349A4 (en) 2016-09-14
US20160107136A1 (en) 2016-04-21
EP2612349A2 (en) 2013-07-10
CN106237934A (zh) 2016-12-21
TWI538020B (zh) 2016-06-11
WO2012030679A3 (en) 2012-07-05
KR20130101035A (ko) 2013-09-12
TWI575574B (zh) 2017-03-21
US9764298B2 (en) 2017-09-19
JP2013542901A (ja) 2013-11-28
CN106237934B (zh) 2019-08-27
US20120051994A1 (en) 2012-03-01
JP5908476B2 (ja) 2016-04-26
WO2012030679A2 (en) 2012-03-08
JP2016120496A (ja) 2016-07-07
TW201630055A (zh) 2016-08-16
CN103201824A (zh) 2013-07-10
TW201218254A (en) 2012-05-01

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