CN103165178B - 精细粒度电源门控 - Google Patents
精细粒度电源门控 Download PDFInfo
- Publication number
- CN103165178B CN103165178B CN201210483452.0A CN201210483452A CN103165178B CN 103165178 B CN103165178 B CN 103165178B CN 201210483452 A CN201210483452 A CN 201210483452A CN 103165178 B CN103165178 B CN 103165178B
- Authority
- CN
- China
- Prior art keywords
- wordline
- power lead
- power
- row
- memory array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005469 granulation Methods 0.000 title claims abstract description 16
- 230000003179 granulation Effects 0.000 title claims abstract description 16
- 230000004913 activation Effects 0.000 claims description 30
- 230000003213 activating effect Effects 0.000 claims description 12
- 108010032595 Antibody Binding Sites Proteins 0.000 claims description 11
- 230000004044 response Effects 0.000 claims description 11
- 230000000875 corresponding effect Effects 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000002596 correlated effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 8
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 238000006880 cross-coupling reaction Methods 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002618 waking effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/315,604 | 2011-12-09 | ||
US13/315,604 US8611169B2 (en) | 2011-12-09 | 2011-12-09 | Fine granularity power gating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103165178A CN103165178A (zh) | 2013-06-19 |
CN103165178B true CN103165178B (zh) | 2016-01-27 |
Family
ID=48464893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210483452.0A Expired - Fee Related CN103165178B (zh) | 2011-12-09 | 2012-11-23 | 精细粒度电源门控 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8611169B2 (zh) |
JP (1) | JP2013122808A (zh) |
CN (1) | CN103165178B (zh) |
DE (1) | DE102012217578B4 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9183906B2 (en) * | 2012-10-02 | 2015-11-10 | International Business Machines Corporation | Fine granularity power gating |
US9330755B1 (en) * | 2013-02-08 | 2016-05-03 | Adesto Technologies Corporation | Latch circuits and methods with programmable impedance elements |
KR102241647B1 (ko) | 2014-12-24 | 2021-04-20 | 삼성전자주식회사 | 순간 전압 강하를 감소시키는 반도체 장치 |
US9997227B2 (en) * | 2015-12-18 | 2018-06-12 | Intel Corporation | Non-volatile ferroelectric logic with granular power-gating |
KR102511201B1 (ko) | 2017-09-27 | 2023-03-17 | 삼성전자주식회사 | 과전압으로부터 소자를 보호하기 위한 전자 회로 및 그것을 포함하는 전자 장치 |
JP6490840B1 (ja) * | 2018-01-05 | 2019-03-27 | 華邦電子股▲ふん▼有限公司Winbond Electronics Corp. | メモリデバイス |
CN110262616B (zh) * | 2019-05-22 | 2021-01-15 | 西安理工大学 | 一种超细粒度控制门级单元电源供应的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574090A (zh) * | 2003-06-05 | 2005-02-02 | 株式会社瑞萨科技 | 可控制电源线与/或接地线的电位电平的半导体存储装置 |
CN101727954A (zh) * | 2008-10-24 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 存储器阵列的电源线解码方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3058431B2 (ja) | 1990-06-12 | 2000-07-04 | 株式会社東芝 | 半導体記憶装置 |
JP3667787B2 (ja) | 1994-05-11 | 2005-07-06 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP4198201B2 (ja) | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
US5729498A (en) | 1996-06-25 | 1998-03-17 | Industrial Technology Research Institute | Reduced power consumption sram |
JPH10125070A (ja) | 1996-10-23 | 1998-05-15 | Nec Corp | メモリ装置 |
JP3523762B2 (ja) * | 1996-12-19 | 2004-04-26 | 株式会社東芝 | 半導体記憶装置 |
KR100270006B1 (ko) | 1996-12-23 | 2000-12-01 | 포만 제프리 엘 | 다수의액세스값을기억하고액세스하기위한장치및그복원방법 |
US5901103A (en) | 1997-04-07 | 1999-05-04 | Motorola, Inc. | Integrated circuit having standby control for memory and method thereof |
US6236617B1 (en) | 1999-12-10 | 2001-05-22 | International Business Machines Corporation | High performance CMOS word-line driver |
US20020003743A1 (en) | 2000-07-10 | 2002-01-10 | Mitsubishi Denki Kabushiki Kaisha | Memory device |
US6426890B1 (en) * | 2001-01-26 | 2002-07-30 | International Business Machines Corporation | Shared ground SRAM cell |
JP2002334588A (ja) * | 2001-05-11 | 2002-11-22 | Seiko Epson Corp | 不揮発性半導体記憶装置のプログラム方法 |
US6724648B2 (en) * | 2002-04-05 | 2004-04-20 | Intel Corporation | SRAM array with dynamic voltage for reducing active leakage power |
US7061794B1 (en) | 2004-03-30 | 2006-06-13 | Virage Logic Corp. | Wordline-based source-biasing scheme for reducing memory cell leakage |
JP4330516B2 (ja) * | 2004-08-04 | 2009-09-16 | パナソニック株式会社 | 半導体記憶装置 |
JP2006294216A (ja) | 2005-03-15 | 2006-10-26 | Renesas Technology Corp | 半導体記憶装置 |
US7489584B2 (en) | 2005-05-11 | 2009-02-10 | Texas Instruments Incorporated | High performance, low-leakage static random access memory (SRAM) |
TWI261261B (en) * | 2005-07-29 | 2006-09-01 | Winbond Electronics Corp | Sensing circuit for multi-level flash memory |
JP5100035B2 (ja) | 2005-08-02 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US7408829B2 (en) | 2006-02-13 | 2008-08-05 | International Business Machines Corporation | Methods and arrangements for enhancing power management systems in integrated circuits |
US7362647B2 (en) * | 2006-07-12 | 2008-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Power control circuit |
JP2008287768A (ja) * | 2007-05-15 | 2008-11-27 | Toshiba Corp | 半導体記憶装置 |
US7729194B2 (en) | 2007-08-08 | 2010-06-01 | Maxim Integrated Products, Inc. | Backup for circuits having volatile states |
US7643357B2 (en) * | 2008-02-18 | 2010-01-05 | International Business Machines Corporation | System and method for integrating dynamic leakage reduction with write-assisted SRAM architecture |
US8305831B2 (en) | 2009-10-15 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power management |
-
2011
- 2011-12-09 US US13/315,604 patent/US8611169B2/en not_active Expired - Fee Related
-
2012
- 2012-09-18 JP JP2012204695A patent/JP2013122808A/ja active Pending
- 2012-09-27 DE DE102012217578.4A patent/DE102012217578B4/de not_active Expired - Fee Related
- 2012-11-23 CN CN201210483452.0A patent/CN103165178B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574090A (zh) * | 2003-06-05 | 2005-02-02 | 株式会社瑞萨科技 | 可控制电源线与/或接地线的电位电平的半导体存储装置 |
CN101727954A (zh) * | 2008-10-24 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 存储器阵列的电源线解码方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102012217578A1 (de) | 2013-06-13 |
JP2013122808A (ja) | 2013-06-20 |
CN103165178A (zh) | 2013-06-19 |
US8611169B2 (en) | 2013-12-17 |
US20130148455A1 (en) | 2013-06-13 |
DE102012217578B4 (de) | 2016-07-28 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171121 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171121 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160127 |