CN103119702A - 具有聚合物填料沟槽的半导体芯片装置 - Google Patents

具有聚合物填料沟槽的半导体芯片装置 Download PDF

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Publication number
CN103119702A
CN103119702A CN2011800431134A CN201180043113A CN103119702A CN 103119702 A CN103119702 A CN 103119702A CN 2011800431134 A CN2011800431134 A CN 2011800431134A CN 201180043113 A CN201180043113 A CN 201180043113A CN 103119702 A CN103119702 A CN 103119702A
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China
Prior art keywords
semiconductor chip
insulating layer
trench
polymer filler
solder
Prior art date
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Pending
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CN2011800431134A
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English (en)
Chinese (zh)
Inventor
迈克尔·Z·苏
贾迈尔·里法伊-艾哈迈德
布莱恩·布莱克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATI Technologies ULC
Advanced Micro Devices Inc
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ATI Technologies ULC
Advanced Micro Devices Inc
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Publication date
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Publication of CN103119702A publication Critical patent/CN103119702A/zh
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    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
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    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
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    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
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    • HELECTRICITY
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    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
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    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
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    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
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    • H10W74/473Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
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    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
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    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
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    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/698Semiconductor materials that are electrically insulating, e.g. undoped silicon
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    • H10W72/07311Treating the bonding area before connecting, e.g. by applying flux or cleaning
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    • H10W90/26Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
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    • H10W90/28Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
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    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
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    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN2011800431134A 2010-09-09 2011-09-09 具有聚合物填料沟槽的半导体芯片装置 Pending CN103119702A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/878,795 2010-09-09
US12/878,795 US8617926B2 (en) 2010-09-09 2010-09-09 Semiconductor chip device with polymeric filler trench
PCT/US2011/051058 WO2012034052A1 (en) 2010-09-09 2011-09-09 Semiconductor chip device with polymeric filler trench

Publications (1)

Publication Number Publication Date
CN103119702A true CN103119702A (zh) 2013-05-22

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CN2011800431134A Pending CN103119702A (zh) 2010-09-09 2011-09-09 具有聚合物填料沟槽的半导体芯片装置

Country Status (7)

Country Link
US (2) US8617926B2 (enExample)
EP (1) EP2614522B1 (enExample)
JP (1) JP2013537365A (enExample)
KR (1) KR20130140643A (enExample)
CN (1) CN103119702A (enExample)
IN (1) IN2013DN02549A (enExample)
WO (1) WO2012034052A1 (enExample)

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