CN103097371A - 高金刚烷衍生物、其制备方法及光致抗蚀剂用感光性材料 - Google Patents

高金刚烷衍生物、其制备方法及光致抗蚀剂用感光性材料 Download PDF

Info

Publication number
CN103097371A
CN103097371A CN2011800166482A CN201180016648A CN103097371A CN 103097371 A CN103097371 A CN 103097371A CN 2011800166482 A CN2011800166482 A CN 2011800166482A CN 201180016648 A CN201180016648 A CN 201180016648A CN 103097371 A CN103097371 A CN 103097371A
Authority
CN
China
Prior art keywords
oxo
oxa
homoadamantan
oxy
methyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800166482A
Other languages
English (en)
Chinese (zh)
Inventor
田中慎司
上野山义崇
大野英俊
河野直弥
伊藤克树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Organic Chemical Industry Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to CN201510231284.XA priority Critical patent/CN104877067A/zh
Publication of CN103097371A publication Critical patent/CN103097371A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D313/00—Heterocyclic compounds containing rings of more than six members having one oxygen atom as the only ring hetero atom
    • C07D313/02—Seven-membered rings
    • C07D313/06—Seven-membered rings condensed with carbocyclic rings or ring systems
    • C07D313/10—Seven-membered rings condensed with carbocyclic rings or ring systems condensed with two six-membered rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Pyrane Compounds (AREA)
CN2011800166482A 2010-04-02 2011-03-16 高金刚烷衍生物、其制备方法及光致抗蚀剂用感光性材料 Pending CN103097371A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510231284.XA CN104877067A (zh) 2010-04-02 2011-03-16 (甲基)丙烯酸系共聚物及光致抗蚀剂用感光性材料

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-086352 2010-04-02
JP2010086352A JP2011219363A (ja) 2010-04-02 2010-04-02 ホモアダマンタン誘導体、その製造方法及びフォトレジスト用感光性材料
PCT/JP2011/001532 WO2011125291A1 (ja) 2010-04-02 2011-03-16 ホモアダマンタン誘導体、その製造方法及びフォトレジスト用感光性材料

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510231284.XA Division CN104877067A (zh) 2010-04-02 2011-03-16 (甲基)丙烯酸系共聚物及光致抗蚀剂用感光性材料

Publications (1)

Publication Number Publication Date
CN103097371A true CN103097371A (zh) 2013-05-08

Family

ID=44762262

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011800166482A Pending CN103097371A (zh) 2010-04-02 2011-03-16 高金刚烷衍生物、其制备方法及光致抗蚀剂用感光性材料
CN201510231284.XA Pending CN104877067A (zh) 2010-04-02 2011-03-16 (甲基)丙烯酸系共聚物及光致抗蚀剂用感光性材料

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201510231284.XA Pending CN104877067A (zh) 2010-04-02 2011-03-16 (甲基)丙烯酸系共聚物及光致抗蚀剂用感光性材料

Country Status (5)

Country Link
US (2) US20130022914A1 (https=)
JP (1) JP2011219363A (https=)
KR (3) KR102061400B1 (https=)
CN (2) CN103097371A (https=)
WO (1) WO2011125291A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10571805B2 (en) 2015-06-26 2020-02-25 Sumitomo Chemical Company, Limited Resist composition

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5608009B2 (ja) 2010-08-12 2014-10-15 大阪有機化学工業株式会社 ホモアダマンタン誘導体、その製造方法及びフォトレジスト組成物
JP6014980B2 (ja) * 2011-02-08 2016-10-26 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP2013225094A (ja) * 2011-10-07 2013-10-31 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP6330250B2 (ja) * 2012-03-07 2018-05-30 住友化学株式会社 レジストパターンの製造方法
JP6123383B2 (ja) * 2012-03-23 2017-05-10 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6142602B2 (ja) * 2012-03-23 2017-06-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6123384B2 (ja) * 2012-03-23 2017-05-10 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6315748B2 (ja) * 2012-04-27 2018-04-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6134562B2 (ja) * 2012-04-27 2017-05-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6134563B2 (ja) * 2012-04-27 2017-05-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6195725B2 (ja) * 2012-05-01 2017-09-13 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6174363B2 (ja) * 2012-05-14 2017-08-02 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6174362B2 (ja) * 2012-05-14 2017-08-02 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246492B2 (ja) * 2012-05-15 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246493B2 (ja) * 2012-05-15 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246491B2 (ja) * 2012-05-15 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6208974B2 (ja) * 2012-05-15 2017-10-04 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246494B2 (ja) * 2012-05-18 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6145303B2 (ja) * 2012-05-18 2017-06-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6208976B2 (ja) * 2012-05-18 2017-10-04 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6246495B2 (ja) * 2012-05-18 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6181996B2 (ja) * 2012-07-03 2017-08-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6149511B2 (ja) * 2012-07-12 2017-06-21 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6276966B2 (ja) * 2012-11-15 2018-02-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5978139B2 (ja) * 2013-01-22 2016-08-24 東京応化工業株式会社 レジストパターン形成方法
JP6058141B2 (ja) * 2013-08-05 2017-01-11 アルプス電気株式会社 透光性導電部材およびそのパターニング方法
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
CA2950922A1 (en) * 2014-06-27 2015-12-30 Henkel IP & Holding GmbH Alkoxysilane-functionalized hydrocarbon compounds, intermediates thereof and methods of preparation thereof
US10174546B2 (en) * 2015-03-03 2019-01-08 Mechoshade Systems, Llc Shade adjustment notification system and method
JP6670694B2 (ja) * 2015-07-14 2020-03-25 住友化学株式会社 レジスト組成物及びレジストパターン製造方法
JP6960308B2 (ja) * 2016-12-01 2021-11-05 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US11414373B2 (en) 2017-01-20 2022-08-16 Evonik Operations Gmbh Glycerol (meth)acrylate carboxylic ester having a long shelf life
JP7040280B2 (ja) * 2017-06-13 2022-03-23 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6780602B2 (ja) 2017-07-31 2020-11-04 信越化学工業株式会社 レジスト組成物及びパターン形成方法
EP3611155A1 (en) 2018-08-16 2020-02-19 Evonik Operations GmbH Preparation of (meth)acrylic acid esters

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000122294A (ja) * 1998-08-10 2000-04-28 Toshiba Corp 感光性組成物及びパタ―ン形成方法
WO2005108343A1 (ja) * 2004-05-10 2005-11-17 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
WO2005111097A1 (ja) * 2004-05-18 2005-11-24 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
CN101515112A (zh) * 2008-02-22 2009-08-26 东京应化工业株式会社 正型抗蚀剂组合物、抗蚀剂图案形成方法及高分子化合物
JP2009280538A (ja) * 2008-05-23 2009-12-03 Idemitsu Kosan Co Ltd 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
JP2003005375A (ja) * 2001-06-21 2003-01-08 Fuji Photo Film Co Ltd ポジ型レジスト組成物
WO2005085301A1 (ja) * 2004-03-08 2005-09-15 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
US20050282985A1 (en) * 2004-06-17 2005-12-22 Hiroshi Koyama Fluorine-atom-containing polymerizable unsaturated-monomer, fluorine-atom-containing polymeric compound and photoresist resin composition
TWI400571B (zh) * 2006-03-14 2013-07-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
EP1975705B1 (en) * 2007-03-28 2016-04-27 FUJIFILM Corporation Positive resist composition and pattern-forming method
JP4671065B2 (ja) * 2008-09-05 2011-04-13 信越化学工業株式会社 ダブルパターン形成方法
JP5629454B2 (ja) * 2008-12-12 2014-11-19 富士フイルム株式会社 重合性化合物、ラクトン含有化合物、ラクトン含有化合物の製造方法、及び、該重合性化合物を重合させた高分子化合物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000122294A (ja) * 1998-08-10 2000-04-28 Toshiba Corp 感光性組成物及びパタ―ン形成方法
WO2005108343A1 (ja) * 2004-05-10 2005-11-17 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
WO2005111097A1 (ja) * 2004-05-18 2005-11-24 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
CN101515112A (zh) * 2008-02-22 2009-08-26 东京应化工业株式会社 正型抗蚀剂组合物、抗蚀剂图案形成方法及高分子化合物
JP2009280538A (ja) * 2008-05-23 2009-12-03 Idemitsu Kosan Co Ltd 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10571805B2 (en) 2015-06-26 2020-02-25 Sumitomo Chemical Company, Limited Resist composition
TWI710857B (zh) * 2015-06-26 2020-11-21 日商住友化學股份有限公司 阻劑組合物

Also Published As

Publication number Publication date
CN104877067A (zh) 2015-09-02
JP2011219363A (ja) 2011-11-04
KR20180128100A (ko) 2018-11-30
KR102061400B1 (ko) 2019-12-31
US20150316847A1 (en) 2015-11-05
WO2011125291A1 (ja) 2011-10-13
KR20170091182A (ko) 2017-08-08
KR20130034016A (ko) 2013-04-04
US20130022914A1 (en) 2013-01-24

Similar Documents

Publication Publication Date Title
CN103097371A (zh) 高金刚烷衍生物、其制备方法及光致抗蚀剂用感光性材料
CN103038226A (zh) 高金刚烷衍生物、其制备方法以及光致抗蚀剂组合物
CN101952239A (zh) 含脂环结构的化合物、(甲基)丙烯酸酯类及其制备方法
JP2017008068A (ja) 塩基反応性光酸発生剤およびこれを含むフォトレジスト
JP4768152B2 (ja) フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JPWO2008081768A1 (ja) 脂環構造含有クロロメチルエーテル類、フォトレジスト用重合性モノマーおよびその製造方法
CN101289388A (zh) 丙烯酸羟基苯酯单体和聚合物
JP7663111B2 (ja) 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法
JP4188058B2 (ja) フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
TW201002667A (en) Alicyclic structure-containing compound, (meth)acrylate, (meth)acrylic polymer and positive resist composition containing the (meth)acrylic polymer
JP2005060638A (ja) 重合体、製造方法、レジスト組成物およびパターン形成法
JP4780945B2 (ja) 不飽和カルボン酸ヘミアセタールエステル、高分子化合物及びフォトレジスト用樹脂組成物
JP4323250B2 (ja) 重合体、重合体の製造方法、レジスト組成物およびパターン形成方法
JP4315761B2 (ja) （共）重合体、製造方法、レジスト組成物およびパターン形成方法
JP2007284381A (ja) フォトレジスト用（メタ）アクリル系単量体、その高分子化合物及びフォトレジスト用樹脂組成物
JP4033826B2 (ja) フォトレジスト用樹脂及びフォトレジスト用樹脂組成物
JP4332445B2 (ja) レジスト用重合体
JP4565820B2 (ja) ６−トリフルオロメチル−２−ビニルオキシ−４−オキサトリシクロ［４．２．１．０３，７］ノナン−５−オン、及び高分子化合物
JP6028047B2 (ja) ホモアダマンタン誘導体、その製造方法及びフォトレジスト用感光性材料
JP4493012B2 (ja) レジスト用重合体およびレジスト組成物
JP4951199B2 (ja) （メタ）アクリル酸エステルの製造方法
JP6705286B2 (ja) 重合性単量体の製造方法、リソグラフィー用重合体の製造方法およびレジスト組成物の製造方法
JP4375785B2 (ja) レジスト用重合体
JP2006036891A (ja) α−不飽和アシルオキシ−γ−ブチルラクトン誘導体、高分子化合物及びフォトレジスト用樹脂組成物
JP2004083894A (ja) 重合体、レジスト組成物、およびパターン形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: OSAKA ORGANIC CHEMICAL INDUSTRY CO., LTD.

Free format text: FORMER OWNER: IDEMITSU KOSAN CO., LTD.

Effective date: 20140928

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20140928

Address after: Osaka Japan

Applicant after: OSAKA ORGANIC CHEMICAL INDUSTRY LTD.

Address before: Japan within Tokyo Chiyoda Ku pill 3 chome 1 No. 1

Applicant before: IDEMITSU KOSAN Co.,Ltd.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20130508