CN103097283B - 石墨烯生长工艺 - Google Patents

石墨烯生长工艺 Download PDF

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Publication number
CN103097283B
CN103097283B CN201180043954.5A CN201180043954A CN103097283B CN 103097283 B CN103097283 B CN 103097283B CN 201180043954 A CN201180043954 A CN 201180043954A CN 103097283 B CN103097283 B CN 103097283B
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heating
graphene
heating rate
crucible
silicon carbide
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Chinese (zh)
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CN103097283A (zh
Inventor
罗西塔·雅基莫娃
蒂霍米尔·雅基莫夫
米克尔·叙韦耶尔维
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GRAPHENSIC CO Ltd
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GRAPHENSIC CO Ltd
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201180043954.5A 2010-09-16 2011-03-23 石墨烯生长工艺 Active CN103097283B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050966 2010-09-16
SE1050966-9 2010-09-16
PCT/SE2011/050328 WO2012036608A1 (en) 2010-09-16 2011-03-23 Process for growth of graphene

Publications (2)

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CN103097283A CN103097283A (zh) 2013-05-08
CN103097283B true CN103097283B (zh) 2014-12-10

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CN201180043954.5A Active CN103097283B (zh) 2010-09-16 2011-03-23 石墨烯生长工艺

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Country Link
US (1) US9150417B2 (enExample)
EP (1) EP2616390B1 (enExample)
JP (1) JP5727017B2 (enExample)
CN (1) CN103097283B (enExample)
WO (1) WO2012036608A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL213291B1 (pl) * 2010-06-07 2013-02-28 Inst Tech Material Elekt Sposób wytwarzania grafenu
US9157888B2 (en) 2011-05-05 2015-10-13 Graphensic Ab Field effect transistor for chemical sensing using graphene, chemical sensor using the transistor and method for producing the transistor
FR2980786B1 (fr) * 2011-09-30 2013-10-25 Centre Nat Rech Scient Procede de formation d'une couche de graphene a la surface d'un substrat comprenant une couche de silicium
JP6560594B2 (ja) * 2015-11-06 2019-08-14 住友電気工業株式会社 積層体および電子素子
PL417804A1 (pl) 2016-07-02 2018-01-15 Uniwersytet Jagielloński Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
CN106435244B (zh) * 2016-09-20 2018-06-15 南昌大学 一种铝-石墨烯金属复合材料的制备方法
CN109112336B (zh) * 2018-09-27 2021-11-16 中国航空制造技术研究院 一种石墨烯/SiC复合颗粒增强金属基复合材料
CN109652858B (zh) * 2018-12-11 2020-09-08 北京大学 一种利用层间耦合与台阶耦合的协同效应制备单晶六方氮化硼的方法
CN109950131B (zh) * 2019-02-28 2021-09-14 天津大学 以非极性晶面SiC为衬底的单层石墨烯及可控生长方法
DE102020122679A1 (de) 2020-08-31 2022-03-03 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht
DE102020122677A1 (de) 2020-08-31 2022-03-03 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht
CN112919456B (zh) * 2021-02-23 2023-09-22 南京大学 一种具有均一层厚的平整石墨烯生长方法及单层或双层石墨烯薄膜
US20250012739A1 (en) 2021-11-23 2025-01-09 Government Of The United States Of America, As Represented By The Secretary Of Commerce Analyte probe and determining water vapor transmission rate
CN114197039B (zh) * 2021-12-09 2023-05-09 山东大学 一种在4H-SiC衬底上外延生长六英寸以上均匀石墨烯的方法
WO2024151277A1 (en) * 2023-01-13 2024-07-18 Georgia Tech Research Corporation Semiconducting graphene platform
CN117303355A (zh) * 2023-10-16 2023-12-29 浙江大学杭州国际科创中心 一种利用循环加热制备石墨烯的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
JP2003171107A (ja) * 2001-09-28 2003-06-17 Japan Fine Ceramics Center カーボンナノチューブ、カーボンナノチューブ付きＳｉＣウィスカー、カーボンナノチューブ膜、カーボンナノチューブ膜付きＳｉＣ基板及びカーボンナノチューブ膜体
JP3848584B2 (ja) * 2002-02-22 2006-11-22 財団法人ファインセラミックスセンター カーボンナノチューブの製造方法
US7071258B1 (en) 2002-10-21 2006-07-04 Nanotek Instruments, Inc. Nano-scaled graphene plates
CN100384725C (zh) * 2005-07-21 2008-04-30 同济大学 一种碳化硅纳米线的制备方法
JP2007284311A (ja) * 2006-04-19 2007-11-01 Matsushita Electric Ind Co Ltd カーボンナノ材料の製造方法
JP2008087087A (ja) * 2006-09-29 2008-04-17 Matsushita Electric Ind Co Ltd カーボンナノ構造体の成長方法
JP5137066B2 (ja) * 2007-09-10 2013-02-06 国立大学法人福井大学 グラフェンシートの製造方法
KR101443219B1 (ko) * 2007-12-17 2014-09-19 삼성전자주식회사 그라펜 쉘의 제조방법 및 이로부터 제조된 그라펜 쉘
WO2009119641A1 (ja) 2008-03-26 2009-10-01 学校法人早稲田大学 単原子膜の製造方法
CN101602503B (zh) * 2009-07-20 2011-04-27 西安电子科技大学 4H-SiC硅面外延生长石墨烯的方法
JP2012144415A (ja) * 2010-12-21 2012-08-02 Meijo Univ グラフェン素材の製造方法及びグラフェン素材

Also Published As

Publication number Publication date
US9150417B2 (en) 2015-10-06
WO2012036608A1 (en) 2012-03-22
EP2616390B1 (en) 2019-01-23
JP5727017B2 (ja) 2015-06-03
JP2013537164A (ja) 2013-09-30
EP2616390A1 (en) 2013-07-24
CN103097283A (zh) 2013-05-08
EP2616390A4 (en) 2016-12-28
US20130171347A1 (en) 2013-07-04

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