PL417804A1 - Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu - Google Patents

Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu

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Publication number
PL417804A1
PL417804A1 PL417804A PL41780416A PL417804A1 PL 417804 A1 PL417804 A1 PL 417804A1 PL 417804 A PL417804 A PL 417804A PL 41780416 A PL41780416 A PL 41780416A PL 417804 A1 PL417804 A1 PL 417804A1
Authority
PL
Poland
Prior art keywords
synthesis
high quality
silicon carbide
quality graphene
carbide surface
Prior art date
Application number
PL417804A
Other languages
English (en)
Inventor
Piotr Cichoń
Jacek Kołodziej
Original Assignee
Uniwersytet Jagielloński
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniwersytet Jagielloński filed Critical Uniwersytet Jagielloński
Priority to PL417804A priority Critical patent/PL417804A1/pl
Priority to KR1020187037935A priority patent/KR20190024909A/ko
Priority to PL17761570T priority patent/PL3478634T3/pl
Priority to EP17761570.5A priority patent/EP3478634B1/en
Priority to US16/314,313 priority patent/US20190226115A1/en
Priority to JP2018569161A priority patent/JP2019524620A/ja
Priority to ES17761570T priority patent/ES2901235T3/es
Priority to PCT/IB2017/053969 priority patent/WO2018007918A1/en
Publication of PL417804A1 publication Critical patent/PL417804A1/pl

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/24—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/26—Mechanical properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Zgłoszenie dotyczy metody syntezy wysokiej jakości grafenu na powierzchni (0001) węglika krzemu poprzez powierzchniową grafityzację związku w strumieniu atomów krzemu z zewnętrznego źródła sublimacyjnego. Przedmiotem zgłoszenia jest także grafen otrzymany tym sposobem.
PL417804A 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu PL417804A1 (pl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
PL417804A PL417804A1 (pl) 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
KR1020187037935A KR20190024909A (ko) 2016-07-02 2017-06-30 탄화규소의 표면 상의 고품질 그래핀 제조 방법
PL17761570T PL3478634T3 (pl) 2016-07-02 2017-06-30 Sposób syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
EP17761570.5A EP3478634B1 (en) 2016-07-02 2017-06-30 Method for preparation of high-quality graphene on the surface of silicon carbide
US16/314,313 US20190226115A1 (en) 2016-07-02 2017-06-30 Method for preparation of high-quality graphene on the surface of silicon carbide
JP2018569161A JP2019524620A (ja) 2016-07-02 2017-06-30 シリコンカーバイドの表面に高品質グラフェンを調製するための方法
ES17761570T ES2901235T3 (es) 2016-07-02 2017-06-30 Procedimiento de preparación de grafeno de alta calidad sobre la superficie de carburo de silicio
PCT/IB2017/053969 WO2018007918A1 (en) 2016-07-02 2017-06-30 Method for preparation of high-quality graphene on the surface of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL417804A PL417804A1 (pl) 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu

Publications (1)

Publication Number Publication Date
PL417804A1 true PL417804A1 (pl) 2018-01-15

Family

ID=59772660

Family Applications (2)

Application Number Title Priority Date Filing Date
PL417804A PL417804A1 (pl) 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
PL17761570T PL3478634T3 (pl) 2016-07-02 2017-06-30 Sposób syntezy wysokiej jakości grafenu na powierzchni węglika krzemu

Family Applications After (1)

Application Number Title Priority Date Filing Date
PL17761570T PL3478634T3 (pl) 2016-07-02 2017-06-30 Sposób syntezy wysokiej jakości grafenu na powierzchni węglika krzemu

Country Status (7)

Country Link
US (1) US20190226115A1 (pl)
EP (1) EP3478634B1 (pl)
JP (1) JP2019524620A (pl)
KR (1) KR20190024909A (pl)
ES (1) ES2901235T3 (pl)
PL (2) PL417804A1 (pl)
WO (1) WO2018007918A1 (pl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021060999A1 (en) * 2019-09-23 2021-04-01 Uniwersytet Jagielloński The method of obtaining the surface carbide-graphene composite with a controlled surface morphology, especially the sic-graphene composite and the carbide-graphene composite

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112919456B (zh) * 2021-02-23 2023-09-22 南京大学 一种具有均一层厚的平整石墨烯生长方法及单层或双层石墨烯薄膜
CN115206462B (zh) * 2022-06-30 2026-03-13 哈尔滨工业大学 基于流动气体法模拟单晶碳化硅干氧热氧化工艺的方法
CN115849352B (zh) * 2023-02-27 2023-05-16 太原理工大学 一种高效制备叠层石墨烯的方法
CN117303355B (zh) * 2023-10-16 2026-01-13 浙江大学杭州国际科创中心 一种利用循环加热制备石墨烯的方法
CN120174461B (zh) * 2025-04-07 2025-11-18 山东大学 一种在碳化硅衬底上外延均匀石墨烯的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8142754B2 (en) * 2010-03-12 2012-03-27 The Regents Of The University Of California Method for synthesis of high quality graphene
JP5644175B2 (ja) * 2010-04-27 2014-12-24 和人 山内 ＳｉＣ基板へのグラフェン成膜方法
EP2616390B1 (en) 2010-09-16 2019-01-23 Graphensic AB Process for growth of graphene
KR101984697B1 (ko) 2012-12-21 2019-05-31 삼성전자주식회사 그래핀 구조체, 이를 포함한 그래핀 소자 및 그 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021060999A1 (en) * 2019-09-23 2021-04-01 Uniwersytet Jagielloński The method of obtaining the surface carbide-graphene composite with a controlled surface morphology, especially the sic-graphene composite and the carbide-graphene composite
US20220371900A1 (en) * 2019-09-23 2022-11-24 Uniwersytet Jagiellonski The method of obtaining the surface carbide-graphene compositite with a controlled surface morphology, especially the sic-graphene composite and the carbide-graphene composite
US12145851B2 (en) * 2019-09-23 2024-11-19 Uniwersytet Jagiellonski Method of obtaining a silicon carbide-graphene composite with a controlled surface morphology

Also Published As

Publication number Publication date
ES2901235T3 (es) 2022-03-21
PL3478634T3 (pl) 2022-04-11
EP3478634A1 (en) 2019-05-08
US20190226115A1 (en) 2019-07-25
KR20190024909A (ko) 2019-03-08
WO2018007918A1 (en) 2018-01-11
JP2019524620A (ja) 2019-09-05
EP3478634B1 (en) 2021-10-27

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