CN103050439A - 互连线结构及互连线结构的形成方法 - Google Patents
互连线结构及互连线结构的形成方法 Download PDFInfo
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- CN103050439A CN103050439A CN2012105564571A CN201210556457A CN103050439A CN 103050439 A CN103050439 A CN 103050439A CN 2012105564571 A CN2012105564571 A CN 2012105564571A CN 201210556457 A CN201210556457 A CN 201210556457A CN 103050439 A CN103050439 A CN 103050439A
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- dielectric layer
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- interconnection line
- semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210556457.1A CN103050439B (zh) | 2012-12-19 | 2012-12-19 | 互连线结构及互连线结构的形成方法 |
US14/108,860 US9230855B2 (en) | 2012-12-19 | 2013-12-17 | Interconnect structure and forming method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210556457.1A CN103050439B (zh) | 2012-12-19 | 2012-12-19 | 互连线结构及互连线结构的形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103050439A true CN103050439A (zh) | 2013-04-17 |
CN103050439B CN103050439B (zh) | 2017-10-10 |
Family
ID=48063037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201210556457.1A Active CN103050439B (zh) | 2012-12-19 | 2012-12-19 | 互连线结构及互连线结构的形成方法 |
Country Status (2)
Country | Link |
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US (1) | US9230855B2 (zh) |
CN (1) | CN103050439B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103337474A (zh) * | 2013-06-03 | 2013-10-02 | 上海宏力半导体制造有限公司 | 半导体器件的制造方法 |
CN107895711A (zh) * | 2017-12-07 | 2018-04-10 | 睿力集成电路有限公司 | 半导体装置的内连结构及其制造方法 |
CN109313726A (zh) * | 2015-12-30 | 2019-02-05 | 谷歌有限责任公司 | 使用电介质减薄来减少量子设备中的表面损耗和杂散耦合 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10020224B2 (en) | 2015-12-28 | 2018-07-10 | Globalfoundries Inc. | Self-aligned via forming to conductive line and related wiring structure |
CN109524295B (zh) * | 2017-09-20 | 2023-12-08 | 长鑫存储技术有限公司 | 半导体器件及其形成方法、存储器 |
CN112750753B (zh) * | 2019-10-29 | 2022-06-03 | 长鑫存储技术有限公司 | 半导体器件及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1735945A (zh) * | 2002-11-02 | 2006-02-15 | 霍尼韦尔国际公司 | 气体层形成材料 |
US20080057666A1 (en) * | 2006-09-06 | 2008-03-06 | Hynix Semiconductor Inc. | Method of manufacturing a semiconductor device |
US20120058639A1 (en) * | 2010-09-07 | 2012-03-08 | Jae-Hwang Sim | Semiconductor devices and methods of fabricating the same |
CN102751237A (zh) * | 2012-07-03 | 2012-10-24 | 上海华力微电子有限公司 | 金属互连结构的制作方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7892926B2 (en) | 2009-07-24 | 2011-02-22 | International Business Machines Corporation | Fuse link structures using film stress for programming and methods of manufacture |
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2012
- 2012-12-19 CN CN201210556457.1A patent/CN103050439B/zh active Active
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2013
- 2013-12-17 US US14/108,860 patent/US9230855B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1735945A (zh) * | 2002-11-02 | 2006-02-15 | 霍尼韦尔国际公司 | 气体层形成材料 |
US20080057666A1 (en) * | 2006-09-06 | 2008-03-06 | Hynix Semiconductor Inc. | Method of manufacturing a semiconductor device |
US20120058639A1 (en) * | 2010-09-07 | 2012-03-08 | Jae-Hwang Sim | Semiconductor devices and methods of fabricating the same |
CN102751237A (zh) * | 2012-07-03 | 2012-10-24 | 上海华力微电子有限公司 | 金属互连结构的制作方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103337474A (zh) * | 2013-06-03 | 2013-10-02 | 上海宏力半导体制造有限公司 | 半导体器件的制造方法 |
CN103337474B (zh) * | 2013-06-03 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制造方法 |
CN109313726A (zh) * | 2015-12-30 | 2019-02-05 | 谷歌有限责任公司 | 使用电介质减薄来减少量子设备中的表面损耗和杂散耦合 |
CN107895711A (zh) * | 2017-12-07 | 2018-04-10 | 睿力集成电路有限公司 | 半导体装置的内连结构及其制造方法 |
CN107895711B (zh) * | 2017-12-07 | 2023-09-22 | 长鑫存储技术有限公司 | 半导体装置的内连结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9230855B2 (en) | 2016-01-05 |
US20140167271A1 (en) | 2014-06-19 |
CN103050439B (zh) | 2017-10-10 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140414 |
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Effective date of registration: 20140414 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: Zuchongzhi road in Pudong Zhangjiang hi tech park Shanghai city Pudong New Area No. 1399 201203 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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