CN103035675A - Rfldmos器件和制造方法 - Google Patents
Rfldmos器件和制造方法 Download PDFInfo
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- CN103035675A CN103035675A CN2012104183248A CN201210418324A CN103035675A CN 103035675 A CN103035675 A CN 103035675A CN 2012104183248 A CN2012104183248 A CN 2012104183248A CN 201210418324 A CN201210418324 A CN 201210418324A CN 103035675 A CN103035675 A CN 103035675A
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- 229910052751 metal Inorganic materials 0.000 claims description 44
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- 238000002513 implantation Methods 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 32
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 25
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- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 23
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- 238000001259 photo etching Methods 0.000 claims description 12
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
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- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
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- 238000004151 rapid thermal annealing Methods 0.000 claims description 5
- 108091006146 Channels Proteins 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- -1 titanium nitride transition metal Chemical class 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2012104183248A CN103035675A (zh) | 2012-10-26 | 2012-10-26 | Rfldmos器件和制造方法 |
Applications Claiming Priority (1)
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CN2012104183248A CN103035675A (zh) | 2012-10-26 | 2012-10-26 | Rfldmos器件和制造方法 |
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CN103035675A true CN103035675A (zh) | 2013-04-10 |
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CN2012104183248A Pending CN103035675A (zh) | 2012-10-26 | 2012-10-26 | Rfldmos器件和制造方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701375A (zh) * | 2013-12-10 | 2015-06-10 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件及工艺方法 |
CN106298531A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 射频横向双扩散金属氧化物半导体的制作方法 |
CN106663610A (zh) * | 2014-08-21 | 2017-05-10 | 维西埃-硅化物公司 | 具有改进的非钳位感应开关抗扰性的晶体管结构 |
CN107710410A (zh) * | 2015-05-21 | 2018-02-16 | 酷星技术股份有限公司 | Dmos及cmos半导体装置的增强集成 |
CN107706106A (zh) * | 2017-09-21 | 2018-02-16 | 信利(惠州)智能显示有限公司 | Amoled显示面板的制备方法 |
CN104425597B (zh) * | 2013-08-23 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件及其制造方法 |
CN109920737A (zh) * | 2019-01-07 | 2019-06-21 | 北京顿思集成电路设计有限责任公司 | Ldmos器件及其制造方法 |
CN111200006A (zh) * | 2018-11-19 | 2020-05-26 | 无锡华润上华科技有限公司 | 横向双扩散金属氧化物半导体场效应管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030057459A1 (en) * | 2001-09-26 | 2003-03-27 | Vladimir Rumennik | High current field-effect transistor |
CN201570499U (zh) * | 2009-11-03 | 2010-09-01 | 苏州远创达科技有限公司 | 栅下具有横向扩散埋层的ldmos器件 |
US20100237411A1 (en) * | 2009-03-23 | 2010-09-23 | Force Mos Technology Co. Ltd. | LDMOS with double LDD and trenched drain |
CN102376762A (zh) * | 2010-08-26 | 2012-03-14 | 上海华虹Nec电子有限公司 | 超级结ldmos器件及制造方法 |
-
2012
- 2012-10-26 CN CN2012104183248A patent/CN103035675A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030057459A1 (en) * | 2001-09-26 | 2003-03-27 | Vladimir Rumennik | High current field-effect transistor |
US20100237411A1 (en) * | 2009-03-23 | 2010-09-23 | Force Mos Technology Co. Ltd. | LDMOS with double LDD and trenched drain |
CN201570499U (zh) * | 2009-11-03 | 2010-09-01 | 苏州远创达科技有限公司 | 栅下具有横向扩散埋层的ldmos器件 |
CN102376762A (zh) * | 2010-08-26 | 2012-03-14 | 上海华虹Nec电子有限公司 | 超级结ldmos器件及制造方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104425597B (zh) * | 2013-08-23 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件及其制造方法 |
CN104701375A (zh) * | 2013-12-10 | 2015-06-10 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件及工艺方法 |
CN106663610A (zh) * | 2014-08-21 | 2017-05-10 | 维西埃-硅化物公司 | 具有改进的非钳位感应开关抗扰性的晶体管结构 |
EP3183755A4 (en) * | 2014-08-21 | 2018-07-18 | Vishay-Siliconix | Transistor structure with improved unclamped inductive switching immunity |
US10181523B2 (en) | 2014-08-21 | 2019-01-15 | Vishay-Siliconix | Transistor structure with improved unclamped inductive switching immunity |
KR101922355B1 (ko) * | 2014-08-21 | 2019-02-13 | 비쉐이-실리코닉스 | 향상된 언클램핑 유도 스위칭 내성을 갖는 트랜지스터 구조체 |
CN107710410A (zh) * | 2015-05-21 | 2018-02-16 | 酷星技术股份有限公司 | Dmos及cmos半导体装置的增强集成 |
CN106298531A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 射频横向双扩散金属氧化物半导体的制作方法 |
CN107706106A (zh) * | 2017-09-21 | 2018-02-16 | 信利(惠州)智能显示有限公司 | Amoled显示面板的制备方法 |
CN111200006A (zh) * | 2018-11-19 | 2020-05-26 | 无锡华润上华科技有限公司 | 横向双扩散金属氧化物半导体场效应管及其制备方法 |
CN109920737A (zh) * | 2019-01-07 | 2019-06-21 | 北京顿思集成电路设计有限责任公司 | Ldmos器件及其制造方法 |
CN109920737B (zh) * | 2019-01-07 | 2022-02-08 | 北京顿思集成电路设计有限责任公司 | Ldmos器件及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140121 |
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Effective date of registration: 20140121 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20130410 |